International Rectifier IRF1405 Datasheet
PD -93991A
AUTOMOTIVE MOSFET
IRF1405
Typical Applications
● Electric Power Steering (EPS)
● Anti-lock Braking System (ABS)
● Wiper Control
● Climate Control
● Power Door
Benefits
● Advanced Process Technology
● Ultra Low On-Resistance
● Dynamic dv/dt Rating
● 175°C Operating Temperature
● Fast Switching
● Repetitive Avalanche Allowed up to Tjmax
G
HEXFET® Power MOSFET
D
V
= 55V
DSS
R
DS(on)
= 5.3mΩ
ID = 169A
S
Description
Specifically designed for Automotive applications, this
Stripe Planar design of HEXFET
utilizes the lastest processing techniques to achieve
extremely low on-resistance per silicon area. Additional
features of this HEXFET power MOSFET are a 175°C
junction operating temperature, fast switching speed
and improved repetitive avalanche rating. These benefits
combine to make this design an extremely efficient and
reliable device for use in Automotive applications and a
wide variety of other applications.
®
Power MOSFETs
TO-220AB
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 169
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 118 A
I
DM
PD @TC = 25°C Power Dissipation 330 W
V
GS
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
T
J
T
STG
Pulsed Drain Current 680
Linear Derating Factor 2.2 W/°C
Gate-to-Source Voltage ± 20 V
Single Pulse Avalanche Energy 560 mJ
Avalanche Current See Fig.12a, 12b, 15, 16 A
Repetitive Avalanche Energy mJ
Operating Junction and -55 to + 175
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting Torque, 6-32 or M3 screw 10 lbf•in (1.1N•m)
°C
Thermal Resistance
Parameter Typ. Max. Units
R
θJC
R
θCS
R
θJA
Junction-to-Case ––– 0.45 °C/W
Case-to-Sink, Flat, Greased Surface 0.50 –––
Junction-to-Ambient ––– 62
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3/25/01
IRF1405
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
C
oss
C
oss
C
eff. Effective Output Capacitance ––– 1500 ––– VGS = 0V, VDS = 0V to 44V
oss
Drain-to-Source Breakdown Voltage 55 –– – –– – V VGS = 0V, ID = 250µA
/∆T
Breakdown Voltage Temp. Coefficient ––– 0.057 ––– V/°C Reference to 25°C, ID = 1mA
J
Static Drain-to-Source On-Resistance ––– 4.6 5.3 mΩ VGS = 10V, ID = 101A
Gate Threshold Voltage 2.0 ––– 4.0 V VDS = 10V, ID = 250µA
Forward Transconductance 69 ––– ––– S VDS = 25V, ID = 110A
Drain-to-Source Leakage Current
––– ––– 20
––– ––– 250 VDS = 44V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 200 VGS = 20V
Gate-to-Source Reverse Leakage ––– ––– -200
VDS = 55V, VGS = 0V
µA
nA
VGS = -20V
Total Gate Charge –– – 170 2 6 0 ID = 101A
Gate-to-Source Charge ––– 44 66 nC VDS = 44V
Gate-to-Drain ("Miller") Charge ––– 62 93 VGS = 10V
Turn-On Delay Time ––– 13 ––– VDD = 38V
Rise Time ––– 190 ––– ID = 110A
Turn-Off Delay Time ––– 130 ––– RG = 1.1Ω
ns
Fall Time ––– 110 ––– VGS = 10V
4.5
Internal Drain Inductance
Internal Source Inductance ––– –––
––– –––
7.5
Between lead,
6mm (0.25in.)
nH
from package
and center of die contact
Input Capacitance ––– 5480 ––– VGS = 0V
Output Capacitance ––– 1210 ––– pF VDS = 25V
Reverse Transfer Capacitance ––– 280 ––– ƒ = 1.0MHz, See Fig. 5
Output Capacitance ––– 5210 ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
Output Capacitance ––– 900 ––– VGS = 0V, VDS = 44V, ƒ = 1.0MHz
D
G
S
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Continuous Source Current MOSFET symbol
(Body Diode)
Pulsed Source Current integral reverse
(Body Diode)
––– –––
––– –––
169
680
showing the
A
p-n junction diode.
G
Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 101A, VGS = 0V
Reverse Recovery Time ––– 88 130 ns TJ = 25°C, IF = 101A
Reverse RecoveryCharge – –– 250 380 nC di/dt = 100A/µs
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
Starting T
RG = 25Ω, I
I
SD
= 25°C, L = 0.11mH
J
= 101A. (See Figure 12).
AS
≤ 101A, di/dt ≤ 210A/µs, V
DD
≤ V
(BR)DSS
TJ ≤ 175°C
Pulse width ≤ 400µs; duty cycle ≤ 2%.
C
eff. is a fixed capacitance that gives the same charging time
oss
as C
oss
while V
is rising from 0 to 80% V
DS
DSS
.
Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 75A.
,
Limited by T
, see Fig.12a, 12b, 15, 16 for typical repetitive
Jmax
avalanche performance.
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D
S
IRF1405
1000
100
10
D
I , Drain-to-Source Current (A)
1
0.1 1 10 100
1000
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM
4.5V
4.5V
20µs PULSE WIDTH
T = 25 C
J
V , Drain-to-Source Voltage (V)
DS
°
T = 25 C
J
°
T = 175 C
J
1000
100
D
I , Drain-to-Source Current (A)
10
0.1 1 10 100
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM
4.5V
4.5V
20µs PULSE WIDTH
T = 175 C
V , Drain-to-Source Voltage (V)
DS
°
J
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
3.0
°
2.5
169A
I =
D
100
10
D
I , Drain-to-Source Current (A)
V = 25V
DS
1
4 6 8 10 12
V , Gate-to-Source Voltage (V)
GS
20µs PULSE WIDTH
Fig 3. Typical Transfer Characteristics
2.0
1.5
(Normalized)
1.0
0.5
DS(on)
R , Drain-to-Source On Resistance
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
T , Junction Temperature ( C)
J
Fig 4. Normalized On-Resistance
V =
10V
GS
°
Vs. Temperature
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