International Rectifier IRF1404 Datasheet
PD -91896E
IRF1404
HEXFET® Power MOSFET
l Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
G
D
V
= 40V
DSS
R
DS(on)
= 0.004Ω
ID = 162A
Description
Seventh Generation HEXFET® Power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance per
silicon area. This benefit, combined with the fast
switching speed and ruggedized device design that
HEXFET power MOSFETs are well known for, provides
the designer with an extremely efficient and reliable
device for use in a wide variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal
resistance and low package cost of the TO-220
contribute to its wide acceptance throughout the industry.
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 162
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 115 A
I
DM
PD @TC = 25°C Power Dissipation 200 W
V
GS
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
T
J
T
STG
Pulsed Drain Current 650
Linear Derating Factor 1.3 W/°C
Gate-to-Source Voltage ± 20 V
Single Pulse Avalanche Energy 519 mJ
Avalanche Current 95 A
Repetitive Avalanche Energy 20 mJ
Operating Junction and -55 to + 175
Storage Temperature Range -55 to + 175
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting Torque, 6-32 or M3 screw 10 lbf•in (1.1N•m)
S
TO-220AB
°C
Thermal Resistance
Parameter Typ. Max. Units
R
θJC
R
θCS
R
θJA
Junction-to-Case ––– 0.75
Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W
Junction-to-Ambient ––– 62
www.irf.com 1
10/20/00
IRF1404
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
C
oss
C
oss
C
eff. Effective Output Capacitance ––– 1540 ––– VGS = 0V, VDS = 0V to 32V
oss
Drain-to-Source Breakdown Voltage 40 –– – ––– V VGS = 0V, ID = 250µA
/∆T
Breakdown Voltage Temp. Coefficient ––– 0.036 ––– V/°C Reference to 25°C, ID = 1mA
J
Static Drain-to-Source On-Resistance ––– 0.0035 0.004 Ω VGS = 10V, ID = 95A
Gate Threshold Voltage 2.0 ––– 4. 0 V VDS = 10V, ID = 250µA
Forward Transconductance 106 ––– ––– S VDS = 25V, ID = 60A
Drain-to-Source Leakage Current
––– ––– 20
––– ––– 250 VDS = 32V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 200 VGS = 20V
Gate-to-Source Reverse Leakage ––– ––– -200
VDS = 40V, VGS = 0V
µA
nA
VGS = -20V
Total Gate Charge –– – 160 200 ID = 95A
Gate-to-Source Charge ––– 35 ––– nC VDS = 32V
Gate-to-Drain ("Miller") Charge ––– 42 60 VGS = 10V
Turn-On Delay Time ––– 17 ––– VDD = 20V
Rise Time ––– 140 ––– ID = 95A
Turn-Off Delay Time ––– 72 ––– RG = 2.5Ω
ns
Fall Time ––– 26 ––– RD = 0.21Ω
4.5
Internal Drain Inductance
Internal Source Inductance ––– –––
––– –––
7.5
Between lead,
6mm (0.25in.)
nH
from package
and center of die contact
Input Capacitance ––– 7360 ––– VGS = 0V
Output Capacitance ––– 1680 ––– pF VDS = 25V
Reverse Transfer Capacitance ––– 240 ––– ƒ = 1.0MHz, See Fig. 5
Output Capacitance ––– 6630 ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
Output Capacitance ––– 1490 ––– VGS = 0V, VDS = 32V, ƒ = 1.0MHz
D
G
S
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Continuous Source Current MOSFET symbol
(Body Diode)
Pulsed Source Current integral reverse
(Body Diode)
––– –––
––– –––
162
650
showing the
A
p-n junction diode.
G
Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 95A, VGS = 0V
Reverse Recovery Time ––– 71 110 ns TJ = 25°C, IF = 95A
Reverse RecoveryCharge – –– 180 270 nC di/dt = 100A/µs
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11)
Starting T
RG = 25Ω, I
I
SD
= 25°C, L = 0.12mH
J
= 95A. (See Figure 12)
AS
≤ 95A, di/dt ≤ 150A/µs, V
DD
≤ V
(BR)DSS
Pulse width ≤ 300µs; duty cycle ≤ 2%.
C
eff. is a fixed capacitance that gives the same charging time
oss
as C
Calculated continuous current based on maximum allowable
,
junction temperature. Package limitation current is 75A
oss
while V
is rising from 0 to 80% V
DS
DSS
TJ ≤ 175°C
2 www.irf.com
D
S
IRF1404
1000
100
D
I , Drain-to-Source Current (A)
10
0.1 1 10 100
1000
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM
4.5V
4.5V
20µs PULSE WIDTH
T = 25 C
J
V , Drain-to-Source Voltage (V)
DS
°
T = 25 C
J
°
T = 175 C
J
1000
100
D
I , Drain-to-Source Current (A)
10
0.1 1 10 100
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM
4.5V
4.5V
20µs PULSE WIDTH
T = 175 C
V , Drain-to-Source Voltage (V)
DS
°
J
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
2.5
°
2.0
159A
I =
D
1.5
100
1.0
(Normalized)
D
I , Drain-to-Source Current (A)
V = 25V
DS
10
4.0 5.0 6.0 7.0 8.0 9.0
V , Gate-to-Source Voltage (V)
GS
20µs PULSE WIDTH
Fig 3. Typical Transfer Characteristics
0.5
DS(on)
R , Drain-to-Source On Resistance
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
T , Junction Temperature ( C)
J
Fig 4. Normalized On-Resistance
V =
10V
GS
°
Vs. Temperature
www.irf.com 3
Loading...