International Rectifier IRF1310N Datasheet
PD - 91504A
IRF1310N
HEXFET® Power MOSFET
l Advanced Process Technology
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
Description
Fifth Generation HEXFETs from International Rectifier
G
D
V
= 100V
DSS
R
DS(on)
= 0.036Ω
ID = 42A
S
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal
resistance and low package cost of the TO-220
contribute to its wide acceptance throughout the
TO-220AB
industry.
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 42
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 30 A
I
DM
PD @TC = 25°C Power Dissipation 160 W
V
GS
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
T
J
T
STG
Pulsed Drain Current 140
Linear Derating Factor 1.1 W/°C
Gate-to-Source Voltage ± 20 V
Single Pulse Avalanche Energy 420 mJ
Avalanche Current 22 A
Repetitive Avalanche Energy 16 mJ
Operating Junction and -55 to + 175
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m)
°C
Thermal Resistance
R
θJC
R
θCS
R
θJA
Junction-to-Case ––– 0.95
Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W
Junction-to-Ambient ––– 62
Parameter Typ. Max. Units
5/14/98
IRF1310N
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage 100 ––– ––– V VGS = 0V, ID = 250µA
/∆T
Breakdown Voltage Temp. Coefficient ––– 0.11 ––– V/°C Reference to 25°C, ID = 1mA
J
Static Drain-to-Source On-Resistance ––– ––– 0.036 Ω VGS = 10V, ID = 22A
Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA
Forward Transconductance 14 ––– –– – S VDS = 25V, ID = 22A
Drain-to-Source Leakage Current
––– ––– 25
––– ––– 250 VDS = 80V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V
Gate-to-Source Reverse Leakage ––– ––– -100
VDS = 100V, VGS = 0V
µA
nA
VGS = -20V
Total Gate Charge ––– ––– 11 0 ID = 22A
Gate-to-Source Charge ––– ––– 15 nC VDS = 80V
Gate-to-Drain ("Miller") Charge ––– ––– 58 VGS = 10V, See Fig. 6 and 13
Turn-On Delay Time ––– 11 ––– VDD = 50V
Rise Time ––– 56 ––– ID = 22A
Turn-Off Delay Time ––– 45 ––– RG = 3.6Ω
ns
Fall Time ––– 40 ––– RD = 2.9Ω, See Fig. 10
4.5
Internal Drain Inductance
Internal Source Inductance ––– –––
––– –––
7.5
Between lead,
6mm (0.25in.)
nH
from package
and center of die contact
Input Capacitance ––– 1900 –– – VGS = 0V
Output Capacitance ––– 450 ––– pF VDS = 25V
Reverse Transfer Capacitance –– – 230 – –– ƒ = 1.0MHz, See Fig. 5
D
G
S
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Starting T
RG = 25Ω, I
Continuous Source Current MOSFET symbol
(Body Diode)
Pulsed Source Current integral reverse
(Body Diode)
––– –––
––– –––
Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 22A, VGS = 0V
Reverse Recovery Time ––– 180 270 ns TJ = 25°C, IF = 22A
Reverse RecoveryCharge ––– 1.2 1.8 µ C di/dt = 100A/µs
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
I
SD
TJ ≤ 175°C
= 25°C, L = 1.7mH
J
= 22A. (See Figure 12)
AS
Pulse width ≤ 300µs; duty cycle ≤ 2%.
42
A
140
≤ 22A, di/dt ≤ 180A/µs, V
showing the
p-n junction diode.
DD
≤ V
(BR)DSS
,
D
G
S
IRF1310N
1000
100
10
D
I , Drain-to-Source Current (A)
1
0.1 1 10 100
1000
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM
4.5V
4.5V
20us PULSE WIDTH
T = 25 C
J
V , Drain-to-Source Voltage (V)
DS
o
1000
100
10
D
I , Drain-to-Source Current (A)
1
0.1 1 10 100
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM
4.5V
4.5V
20us PULSE WIDTH
T = 175 C
J
V , Drain-to-Source Voltage (V)
DS
o
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
3.0
I =
D
36A
100
10
D
I , Drain-to-Source Current (A)
1
4.0 5.0 6.0 7.0 8.0 9.0 10.0
V , Gate-to-Source Voltage (V)
GS
o
T = 25 C
J
o
T = 175 C
J
Fig 3. Typical Transfer Characteristics
2.5
2.0
1.5
(Normalized)
1.0
0.5
DS(on)
R , Drain-to-Source On Resistance
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
T , Junction Temperature ( C)
J
Fig 4. Normalized On-Resistance
Vs. Temperature
V =
GS
o
10V
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