International Rectifier IRF1302L, IRF1302S Datasheet
PD - 94520
AUTOMOTIVE MOSFET
Benefits
● Advanced Process Technology
● Ultra Low On-Resistance
● Dynamic dv/dt Rating
● 175°C Operating Temperature
● Fast Switching
● Repetitive Avalanche Allowed up to Tjmax
G
Description
Specifically designed for Automotive applications, this Stripe Planar
design of HEXFET
techniques to achieve extremely low on-resistance per silicon area.
Additional features of this design are a 175°C junction operating
temperature, fast switching speed and improved repetitive avalanche
rating. These benefits combine to make this design an extremely efficient
and reliable device for use in Automotive applications and a wide variety
of other applications.
®
Power MOSFET utilizes the lastest processing
IRF1302S
IRF1302L
HEXFET® Power MOSFET
D
V
= 20V
DSS
R
S
D2Pak
IRF1302S
= 4.0mΩ
DS(on)
ID = 174A
TO-262
IRF1302L
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 174
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 120 A
I
DM
PD @TC = 25°C Power Dissipation 200 W
V
GS
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt TBD V/ns
T
J
T
STG
Pulsed Drain Current 700
Linear Derating Factor 1.4 W/°C
Gate-to-Source Voltage ± 20 V
Single Pulse Avalanche Energy 350 mJ
Avalanche Current See Fig.12a, 12b, 15, 16 A
Repetitive Avalanche Energy mJ
Operating Junction and -55 to + 175
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
°C
Thermal Resistance
Parameter Typ. Max. Units
R
θJC
R
θJA
Junction-to-Case ––– 0.74 °C/W
Junction-to-Ambient (PCB mount) ––– 40
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07/16/02
IRF1302S/IRF1302L
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
C
oss
C
oss
C
eff. Effective Output Capacitance ––– 3540 ––– VGS = 0V, VDS = 0V to 16V
oss
Drain-to-Source Breakdown Voltage 20 –– – –– – V VGS = 0V, ID = 250µA
/∆T
Breakdown Voltage Temp. Coefficient ––– 0.021 ––– V/°C Reference to 25°C, ID = 1mA
J
Static Drain-to-Source On-Resistance ––– 3.3 4.0 mΩ VGS = 10V, ID = 104A
Gate Threshold Voltage 2.0 ––– 4 .0 V VDS = 10V, ID = 250µA
Forward Transconductance 59 ––– ––– S VDS = 15V, ID = 104A
Drain-to-Source Leakage Current
––– ––– 20
––– ––– 250 VDS = 16V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 200 VGS = 20V
Gate-to-Source Reverse Leakage ––– ––– -200
VDS = 20V, VGS = 0V
µA
nA
VGS = -20V
Total Gate Charge –– – 79 120 ID = 104A
Gate-to-Source Charge ––– 18 27 nC VDS = 16V
Gate-to-Drain ("Miller") Charge ––– 31 46 VGS = 10V
Turn-On Delay Time ––– 28 ––– VDD = 11V
Rise Time ––– 130 ––– ID = 104A
Turn-Off Delay Time ––– 47 ––– RG = 4.5Ω
ns
Fall Time ––– 16 ––– VGS = 10V
4.5
Internal Drain Inductance
Internal Source Inductance ––– –––
––– –––
7.5
Between lead,
6mm (0.25in.)
nH
from package
and center of die contact
Input Capacitance ––– 3600 ––– VGS = 0V
Output Capacitance ––– 2370 ––– pF VDS = 25V
Reverse Transfer Capacitance ––– 520 ––– ƒ = 1.0MHz, See Fig. 5
Output Capacitance ––– 5710 ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
Output Capacitance ––– 2370 ––– VGS = 0V, VDS = 16V, ƒ = 1.0MHz
D
G
S
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Continuous Source Current MOSFET symbol
(Body Diode)
Pulsed Source Current integral reverse
(Body Diode)
––– –––
––– –––
174
700
showing the
A
p-n junction diode.
G
Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 104A, VGS = 0V
Reverse Recovery Time ––– 66 100 ns TJ = 25°C, IF = 104A
Reverse RecoveryCharge ––– 130 200 nC di/dt = 100A/µs
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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D
S
IRF1302S/IRF1302L
10000
)
A
(
t
1000
n
e
r
r
u
C
e
c
r
u
o
S
-
o
t
-
n
i
a
r
D
,
D
I
100
10
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
4.5V
20µs PULSE WIDTH
Tj = 25°C
1
0.1 1 10 100
VDS, Drain-to-Source Voltage (V)
1000.00
10000
)
A
(
t
1000
n
e
r
r
u
C
e
c
r
u
o
S
-
o
t
-
n
i
a
r
D
,
D
I
100
10
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
4.5V
20µs PULSE WIDTH
Tj = 175°C
1
0.1 1 10 100
VDS, Drain-to-Source Voltage (V)
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
2.0
174A
I =
D
)
Α
(
t
n
e
r
r
u
C
e
c
r
100.00
u
o
S
-
o
t
-
n
i
a
r
D
,
D
I
10.00
4.0 5.0 6.0 7.0
TJ = 25°C
V
20µs PULSE WIDTH
DS
TJ = 175°C
= 15V
VGS, Gate-to- Sour ce Voltage ( V)
Fig 3. Typical Transfer Characteristics
1.5
1.0
(Normalized)
0.5
DS(on)
R , Drain-to-Source On Resistance
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
T , Junction Temperature ( C)
J
Fig 4. Normalized On-Resistance
V =
GS
°
10V
Vs. Temperature
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IRF1302S/IRF1302L
100000
)
F
10000
p
(
e
c
n
a
t
i
c
a
p
a
C
,
1000
C
100
1 10 100
V
= 0V, f = 1 MHZ
GS
C
= C
iss
rss
oss
= C
= C
gs
gd
ds
C
C
Ciss
Coss
Crss
+ Cgd, C
+ C
gd
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
1000
°
T = 175 C
J
100
10
°
T = 25 C
1
SD
I , Reverse D rain Current (A)
0.1
0.2 0.7 1.2 1.7 2.2
V ,Source-to-Drain Voltage (V)
SD
J
SHORTED
ds
V = 0 V
GS
12
D
I =
104A
10
7
5
2
GS
V , Gate-to-Source Voltage (V)
0
0 20 40 60 80 100
Q , Tota l Ga te C h a rge (nC )
G
V = 16V
DS
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
10000
)
A
(
t
1000
n
e
r
r
u
C
e
c
r
u
100
o
S
-
o
t
-
n
i
a
r
D
10
,
Tc = 25°C
D
I
Tj = 175°C
Single Pulse
1
1 10 100
V
OPERATION IN THIS AREA
LIMITED BY RDS(on)
, Drain-toSource Voltage (V)
DS
100µsec
1msec
10msec
Fig 7. Typical Source-Drain Diode
Fig 8. Maximum Safe Operating Area
Forward Voltage
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