International Rectifier IRF1104 Datasheet
TO-220AB
PD- 9.1724A
PRELIMINARY
HEXFET® Power MOSFET
l Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced
processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device
design that HEXFET Power MOSFETs are well known for, provides the
designer with an extremely efficient and reliable device for use in a wide variety
of applications.
The TO-220 package is universally preferred for all commercial-industrial
applications at power dissipation levels to approximately 50 watts. The low
thermal resistance and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
G
IRF1104
D
V
= 40V
DSS
R
S
= 0.009Ω
DS(on)
ID = 100A
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 100
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 71 A
I
DM
PD @TC = 25°C Power Dissipation 170 W
V
GS
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
T
J
T
STG
Pulsed Drain Current 400
Linear Derating Factor 1.11 W/°C
Gate-to-Source Voltage ± 20 V
Single Pulse Avalanche Energy 350 mJ
Avalanche Current 60 A
Repetitive Avalanche Energy 17 mJ
Operating Junction and -55 to + 175
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m)
Thermal Resistance
Parameter Typ. Max. Units
R
θJC
R
θCS
R
θJA
Junction-to-Case ––– 0.90
Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W
Junction-to-Ambient ––– 62
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°C
4/24/98
IRF1104
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage 40 ––– ––– V VGS = 0V, ID = 250µA
/∆T
Breakdown Voltage Temp. Coefficient ––– 0.038 ––– V/°C Reference to 25°C, ID = 1mA
J
Static Drain-to-Source On-Resistance ––– ––– 0.009 Ω VGS = 10V, ID = 60A
Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA
Forward Transconductance 37 ––– ––– S VDS = 25V, ID = 60A
Drain-to-Source Leakage Current
––– ––– 25
––– ––– 250 VDS = 32V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V
Gate-to-Source Reverse Leakage ––– ––– -100
VDS = 40V, VGS = 0V
µA
nA
VGS = -20V
Total Gate Charge ––– ––– 93 ID = 60A
Gate-to-Source Charge ––– ––– 29 nC VDS = 32V
Gate-to-Drain ("Miller") Charge ––– ––– 30 VGS = 10V, See Fig. 6 and 13
Turn-On Delay Time ––– 15 ––– VDD = 20V
Rise Time ––– 114 ––– ID = 60A
Turn-Off Delay Time ––– 28 ––– RG = 3.6Ω
ns
Fall Time ––– 19 ––– RD = 0.33Ω, See Fig. 10
4.5
Internal Drain Inductance
Internal Source Inductance ––– –––
––– –––
7.5
Between lead,
6mm (0.25in.)
nH
from package
and center of die contact
Input Capacitance ––– 2900 ––– VGS = 0V
Output Capacitance ––– 1100 ––– pF VDS = 25V
Reverse Transfer Capacitance ––– 250 ––– ƒ = 1.0MHz, See Fig. 5
D
G
S
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Continuous Source Current MOSFET symbol
(Body Diode)
Pulsed Source Current integral reverse
(Body Diode)
––– –––
––– –––
100
400
showing the
A
p-n junction diode.
G
Diode Forward Voltage ––– –– – 1.3 V TJ = 25°C, IS = 60A, VGS = 0V
Reverse Recovery Time ––– 74 110 ns TJ = 25°C, IF = 60A
Reverse RecoveryCharge ––– 188 280 nC di/dt = 100A/µs
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
Pulse width ≤ 300µs; duty cycle ≤ 2%.
max. junction temperature. ( See fig. 11 )
Starting T
RG = 25Ω, I
I
SD
= 25°C, L = 194µH
J
= 60A. (See Figure 12)
AS
≤ 60A, di/dt ≤ 304A/µs, V
DD
≤ V
(BR)DSS
Caculated continuous current based on maximum allowable
junction temperature;for recommended current-handling of the
package refer to Design Tip # 93-4
,
TJ ≤ 175°C
2 www.irf.com
D
S
IRF1104
1000
100
10
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
4.5V
D
I , Drain-to-Source Current (A)
20µs PULSE WIDTH
°
T = 25 C
1
0.1 1 10 100
V , Drain-to-Source Voltage (V)
DS
1000
J
1000
100
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
4.5V
10
D
I , Drain-to-Source Current (A)
20µs PULSE WIDTH
1
0.1 1 10 100
V , Drain-to-Source Voltage (V)
DS
T = 175 C
°
J
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
2.5
I =
D
100A
°
T = 175 C
J
100
10
°
T = 25 C
J
1
D
I , Drain-to-Source Current (A)
V = 50V
DS
0.1
4.0 5.0 6.0 7.0 8.0 9.0 10.0
V , Gate-to-Source Voltage (V)
GS
20µs PULSE WIDTH
Fig 3. Typical Transfer Characteristics
2.0
1.5
1.0
(Normalized)
0.5
DS(on)
R , Drain-to-Source On Resistance
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
T , Junction Temperature( C)
J
Fig 4. Normalized On-Resistance
V =
GS
°
10V
Vs. Temperature
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