International Rectifier PhotoSmart 335, IRF1104 Specifications

IRF1104

PRELIMINARY

HEXFET® Power MOSFET

Fifth Generation HEXFETs from International Rectifier utilize advanced
processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device
design that HEXFET Power MOSFETs are well known for, provides the
designer with an extremely efficient and reliable device for use in a wide variety
of applications.

The TO-220 package is universally preferred for all commercial-industrial
applications at power dissipation levels to approximately 50 watts. The low
thermal resistance and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.

S

D

G

Parameter Max. Units

ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 100 
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 71 A
I

DM

Pulsed Drain Current  400

PD @TC = 25°C Power Dissipation 170 W

Linear Derating Factor 1.11 W/°C

V

GS

Gate-to-Source Voltage ± 20 V

E

AS

Single Pulse Avalanche Energy 350 mJ

I

AR

Avalanche Current 60 A

E

AR

Repetitive Avalanche Energy 17 mJ
dv/dt Peak Diode Recovery dv/dt  5.0 V/ns
T

J

Operating Junction and -55 to + 175
T

STG

Storage Temperature Range

Soldering Temperature, for 10 seconds 300 (1.6mm from case )

°C

Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m)

Absolute Maximum Ratings

Parameter Typ. Max. Units

R

θJC

Junction-to-Case ––– 0.90
R

θCS

Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W
R

θJA

Junction-to-Ambient ––– 62

Thermal Resistance

V

DSS

= 40V

R

DS(on)

= 0.009Ω

ID = 100A

TO-220AB

l Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated

Description

4/24/98

www.irf.com 1

PD- 9.1724A

IRF1104

2 www.irf.com

Parameter Min. Typ. Max. Units Conditions

V

(BR)DSS

Drain-to-Source Breakdown Voltage 40 ––– ––– V VGS = 0V, ID = 250µA

∆V

(BR)DSS

/∆T

J

Breakdown Voltage Temp. Coefficient ––– 0.038 ––– V/°C Reference to 25°C, ID = 1mA

R

DS(on)

Static Drain-to-Source On-Resistance –– – ––– 0.009 Ω VGS = 10V, ID = 60A 

V

GS(th)

Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA

g

fs

Forward Transconductance 37 ––– –– – S VDS = 25V, ID = 60A

––– ––– 25

µA

VDS = 40V, VGS = 0V

––– ––– 250 VDS = 32V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V
Gate-to-Source Reverse Leakage ––– ––– -100

nA

VGS = -20V

Q

g

Total Gate Charge ––– ––– 93 ID = 60A

Q

gs

Gate-to-Source Charge ––– ––– 29 nC VDS = 32V

Q

gd

Gate-to-Drain ("Miller") Charge ––– ––– 30 VGS = 10V, See Fig. 6 and 13 

t

d(on)

Turn-On Delay Time ––– 15 ––– VDD = 20V

t

r

Rise Time ––– 114 ––– ID = 60A

t

d(off)

Turn-Off Delay Time ––– 28 ––– RG = 3.6Ω

t

f

Fall Time ––– 19 ––– RD = 0.33Ω, See Fig. 10 

Between lead,

––– –––

6mm (0.25in.)
from package
and center of die contact

C

iss

Input Capacitance ––– 2900 ––– VGS = 0V

C

oss

Output Capacitance ––– 1100 ––– pF VDS = 25V

C

rss

Reverse Transfer Capacitance ––– 250 ––– ƒ = 1.0MHz, See Fig. 5

nH

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

L

D

Internal Drain Inductance

L

S

Internal Source Inductance ––– –––

S

D

G

I

GSS

ns

4.5

7.5

I

DSS

Drain-to-Source Leakage Current

 Repetitive rating; pulse width limited by

max. junction temperature. ( See fig. 11 )

 I

SD

≤ 60A, di/dt ≤ 304A/µs, V

DD

≤ V

(BR)DSS

,

TJ ≤ 175°C

Notes:

 Starting T

J

= 25°C, L = 194µH

RG = 25Ω, I

AS

= 60A. (See Figure 12)

 Pulse width ≤ 300µs; duty cycle ≤ 2%.

S

D

G

Parameter Min. Typ. Max. Units Conditions

I

S

Continuous Source Current MOSFET symbol
(Body Diode)

––– –––

showing the

I

SM

Pulsed Source Current integral reverse
(Body Diode) 

––– –––

p-n junction diode.

V

SD

Diode Forward Voltage ––– –– – 1.3 V TJ = 25°C, IS = 60A, VGS = 0V 

t

rr

Reverse Recovery Time ––– 74 110 ns TJ = 25°C, IF = 60A

Q

rr

Reverse RecoveryCharge ––– 188 280 nC di/dt = 100A/µs



t

on

Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Source-Drain Ratings and Characteristics

100

400

A

 Caculated continuous current based on maximum allowable

junction temperature;for recommended current-handling of the
package refer to Design Tip # 93-4

IRF1104

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Fig 4. Normalized On-Resistance

Vs. Temperature

Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics

Fig 3. Typical Transfer Characteristics

1

10

100

1000

0.1 1 10 100

20µs PULSE WIDTH
T = 175 C

J

°

TOP

BOTTOM

VGS
15V
10V

8.0V

7.0V

6.0V

5.5V

5.0V

4.5V

V , Drain-to-Source Voltage (V)

I , Drain-to-Source Current (A)

DS

D

4.5V

1

10

100

1000

0.1 1 10 100

20µs PULSE WIDTH
T = 25 C

J

°

TOP

BOTTOM

VGS
15V
10V

8.0V

7.0V

6.0V

5.5V

5.0V

4.5V

V , Drain-to-Source Voltage (V)

I , Drain-to-Source Current (A)

DS

D

4.5V

0.1

1

10

100

1000

4.0 5.0 6.0 7.0 8.0 9.0 10.0

V = 50V
20µs PULSE WIDTH

DS

V , Gate-to-Source Voltage (V)

I , Drain-to-Source Current (A)

GS

D

T = 175 C

J

°

T = 25 C

J

°

-60 -40 -20 0 20 40 60 80 100 120 140 160 180

0.0

0.5

1.0

1.5

2.0

2.5

T , Junction Temperature( C)

R , Drain-to-Source On Resistance

(Normalized)

J

DS(on)

°

V =

I =

GS

D

10V

100A

IRF1104

4 www.irf.com

Fig 8. Maximum Safe Operating Area

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

Fig 7. Typical Source-Drain Diode

Forward Voltage

1 10 100

0

1000

2000

3000

4000

5000

V , Drain-to-Source Voltage (V)

C, Capacitance (pF)

DS

V
C

C
C

=
=

=
=

0V,
C

C
C

f = 1MHz

+ C
+ C

C SHORTED

GS
iss gs gd , ds
rss gd
oss ds gd

C

iss

C

oss

C

rss

0.1

1

10

100

1000

0.2 0.8 1.4 2.0 2.6

V ,Source-to-Drain Voltage (V)

I , Reverse Drain Current (A)

SD

SD

V = 0 V

GS

T = 25 C

J

°

T = 175 C

J

°

1

10

100

1000

10000

1 10 100

OPERATION IN THIS AREA LIMITED

BY R

DS(on)

Single Pulse

T T= 175 C

= 25 C

°

°

J

C

V , Drain-to-Source Voltage (V)

I , Drain Current (A)I , Drain Current (A)

DS

D

10us

100us

1ms

10ms

0 25 50 75 100

0

5

10

15

20

Q , Total Gate Charge (nC)

V , Gate-to-Source Voltage (V)

G

GS

FOR TEST CIRCUIT

SEE FIGURE

I =

D

13

60A

V = 20V

DS

V = 32V

DS

IRF1104

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Fig 10a. Switching Time Test Circuit

V

DS

90%

10%
V

GS

t

d(on)tr

t

d(off)tf

Fig 10b. Switching Time Waveforms

V

DS

Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %

R

D

V

GS

R

G

D.U.T.

10V

+

-

V

DD

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

Fig 9. Maximum Drain Current Vs.

Case Temperature

0.01

0.1

1

0.00001 0.0001 0.001 0.01 0.1 1

Notes:

1. Duty factor D = t / t

2. Peak T =P x Z + T

1 2

J DM thJC C

P

t

t

DM

1

2

t , Rectangular Pulse Duration (sec)

Thermal Response (Z )

1

thJC

0.01

0.02

0.05

0.10

0.20

D = 0.50

SINGLE PULSE

(THERMAL RESPONSE)

25 50 75 100 125 150 175

0

20

40

60

80

100

T , Case Temperature ( C)

I , Drain Current (A)

°

C

D

LIMITED BY PACKAGE

IRF1104

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Q

G

Q

GS

Q

GD

V

G

Charge

D.U.T.

V

DS

I

D

I

G

3mA

V

GS

.3µF

50KΩ

.2µF

12V

Current Regulator

Same Type as D.U.T.

Current Sampling Resistors

+

-

10 V

Fig 13b. Gate Charge Test Circuit

Fig 13a. Basic Gate Charge Waveform

Fig 12c. Maximum Avalanche Energy

Vs. Drain Current

Fig 12b. Unclamped Inductive Waveforms

Fig 12a. Unclamped Inductive Test Circuit

t

p

V

(BR)DSS

I

AS

R

G

I

AS

0.01

Ω

t

p

D.U.T

L

V

DS

+

-

V

DD

DRIVER

A

15V

20V

25 50 75 100 125 150 175

0

200

400

600

800

Starting T , Junction Temperature( C)

E , Single Pulse Avalanche Energy (mJ)

J

AS

°

I

D

TOP
BOTTOM

24A
42A
60A

IRF1104

www.irf.com 7

P.W.

Period

di/dt

Diode Recovery

dv/dt

Ripple ≤ 5%

Body Diode Forward Drop

Re-Applied
Voltage

Reverse
Recovery
Current

Body Diode Forward

Current

VGS=10V

V

DD

I

SD

Driver Gate Drive

D.U.T. ISDWaveform

D.U.T. VDSWaveform

Inductor Curent

D =

P.W.

Period

+

-

+

+

+

-

-

-

Fig 14. For N-Channel HEXFETS

* V

GS

= 5V for Logic Level Devices

Peak Diode Recovery dv/dt Test Circuit







R

G

V

DD

• dv/dt controlled by R

G

• Driver same type as D.U.T.

• ISD controlled by Duty Factor "D"

• D.U.T. - Device Under Test

D.U.T

Circuit Layout Considerations

• Low Stray Inductance

• Ground Plane

• Low Leakage Inductance
Current Transformer



*

IRF1104

8 www.irf.com

LEAD ASSIGNMENTS
1 - GAT E
2 - DRAIN
3 - SOURCE
4 - DRAIN

- B -

1.32 (.052)

1.22 (.048)

3X

0.55 (.022)

0.46 (.018)

2.92 (.115)

2.64 (.104)

4.69 (.185)

4.20 (.165)

3X

0.93 (.037)

0.69 (.027)

4.06 (.160)

3.55 (.140)

1.15 (.045)
M IN

6.47 (.255)

6.10 (.240)

3.78 (.149)

3.54 (.139)

- A -

10.54 (.415)

10.29 (.405)

2.87 (.113)

2.62 (.103)

15.24 (.600)

14.84 (.584)

14.09 (.555)

13.47 (.530)

3X

1.40 (.055)

1.15 (.045)

2.54 (.100)
2X

0.36 (.014) M B A M

4

1 2 3

NOTES:
1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 3 OUTLINE CONFORMS TO JEDEC OUTLIN E TO-220AB.
2 CONTROL L IN G D IMENSIO N : INCH 4 H EATS INK & LE AD MEASURE M EN TS DO NOT INCLUDE BURRS.

Part Marking Information

TO-220AB

Package Outline

TO-220AB Outline

Dimensions are shown in millimeters (inches)

PART NUMBER

INT ERNATION AL
R E C T IF IE R
LOG O

EXAMPLE : THIS IS AN IRF1010
W ITH ASSEMBLY
LO T COD E 9B 1 M

A SSEMBLY
LO T COD E

DATE CODE
(YYW W)
YY = YEAR
WW = WEEK

9246

IRF1010

9B 1M

A

WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: [phone]

EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020

IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: [phone]

IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590

IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111

IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: [phone]

IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: [phone]

http://www.irf.com/ Data and specifications subject to change without notice. 4/98