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International Rectifier
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IRF1018ESPBF
Datasheet
11 pgs446.5 Kb0

International Rectifier IRF1018ESPBF, IRF1018EPBF Datasheet

2/28/08
Benefits
l Improved Gate, Avalanche and Dynamic
dv/dt Ruggedness
l Fully Characterized Capacitance and
Avalanche SOA
l Enhanced body diode dV/dt and dI/dt
Capability
Applications
l High Efficiency Synchronous Rectification in
SMPS
l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits
HEXFET® Power MOSFET
S
D
G
PD - 97125
D2Pak
IRF1018ESPbF
TO-220AB
IRF1018EPbF
TO-262
IRF1018ESLPbF
S
D
G
S
D
G
S
D
G
D
D
D
GDS
Gate Drain Source
IRF1018EPbF
IRF1018ESPbF
IRF1018ESLPbF
V
DSS
60V
R
DS(on)
typ.
7.1m
:
max.
8.4m
:
I
D
79A
Absolute Maximum Ratings
Symbol Parameter Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V
I
D
@ TC = 100°C Continuous Drain Current, VGS @ 10V
A
I
DM
Pulsed Drain Current
c
P
D
@TC = 25°C
Maximum Power Dissipation
W
Linear Derating Factor
W/°C
V
GS
Gate-to-Source Voltage
V
dv/dt
Peak Diode Recovery
e
V/ns
T
J
Operating Junction and
°C
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
k
Avalanche Characteristics
E
AS (Thermally limited)
Single Pulse Avalanche Energy
d
mJ
I
AR
Avalanche Current
c
A
E
AR
Repetitive Avalanche Energy
f
mJ
Thermal Resistance
Symbol Parameter Typ. Max. Units
R
θ
JC
Junction-to-Case
j –––
1.32
R
θ
CS
Case-to-Sink, Flat Greased Surface , TO-220
0.50 –––
R
θ
JA
Junction-to-Ambient, TO-220
j ––– 62
R
θ
JA
Junction-to-Ambient (PCB Mount) , D2Pak
ij
––– 40
11
110
21
-55 to + 175
± 20
0.76
10lbxin (1.1Nxm)
°C/W
300
Max.
79
56
315
88
47
IRF1018E/S/SLPbF
2 www.irf.com
Notes:
Repetitive rating; pulse width limited by max. junction
temperature.
Limited by T
Jmax
, starting TJ = 25°C, L = 0.08mH
RG = 25Ω, I
AS
= 47A, VGS =10V. Part not recommended for
use above this value.
I
SD
≤ 47A, di/dt ≤ 1668A/μs, V
DD
≤ V
(BR)DSS
, TJ ≤ 175°C.
Pulse width ≤ 400μs; duty cycle ≤ 2%.
S
D
G
C
oss
eff. (TR) is a fixed capacitance that gives the same charging time
as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
C
oss
eff. (ER) is a fixed capacitance that gives the same energy as
C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
When mounted on 1" square PCB (FR-4 or G-10 Material). For recom
mended footprint and soldering techniques refer to application note #AN-994.
R
θ
is measured at TJ approximately 90°C.
This is only applied to TO-220
Static @ TJ = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units
V
(BR)DSS
Drain-to-Source Breakdown Voltage 60 ––– ––– V
ΔV
(BR)DSS
/ΔT
J
Breakdown Voltage Temp. Coefficient ––– 0.073 ––– V/°C
R
DS(on)
Static Drain-to-Source On-Resistance ––– 7.1 8.4
mΩ
V
GS(th)
Gate Threshold Voltage 2.0 ––– 4.0 V
I
DSS
Drain-to-Source Leakage Current ––– ––– 20 μA
––– ––– 250
I
GSS
Gate-to-Source Forward Leakage ––– ––– 100 nA Gate-to-Source Reverse Leakage ––– ––– -100
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units
gfs Forward Transconductance 110 ––– ––– S Q
g
Total Gate Charge ––– 46 69 nC
Q
gs
Gate-to-Source Charge ––– 10 –––
Q
gd
Gate-to-Drain ("Miller") Charge ––– 12 –––
Q
sync
Total Gate Charge Sync. (Qg - Qgd)
––– 34 –––
R
G(int)
Internal Gate Resistance
–––
0.73 ––– Ω
t
d(on)
Turn-On Delay Time ––– 13 ––– ns
t
r
Rise Time ––– 35 –––
t
d(off)
Turn-Off Delay Time ––– 55 –––
t
f
Fall Time ––– 46 –––
C
iss
Input Capacitance ––– 2290 –––
C
oss
Output Capacitance ––– 270 –––
C
rss
Reverse Transfer Capacitance ––– 130 ––– pF
C
oss
eff. (ER)
Effective Output Capacitance (Energy Related)
h
––– 390 –––
C
oss
eff. (TR)
Effective Output Capacitance (Time Related)
g
––– 630 –––
Diode Characteristics
Symbol Parameter Min. Typ. Max. Units
I
S
Continuous Source Current ––– –––
79
A
(Body Diode)
I
SM
Pulsed Source Current ––– ––– 315
(Body Diode)
c
V
SD
Diode Forward Voltage ––– ––– 1.3 V
t
rr
Reverse Recovery Time ––– 26 39 ns
TJ = 25°C VR = 51V,
––– 31 47
T
J
= 125°C IF = 47A
Q
rr
Reverse Recovery Charge ––– 24 36 nC
TJ = 25°C
di/dt = 100A/μs
f
––– 35 53
T
J
= 125°C
I
RRM
Reverse Recovery Current ––– 1.8 ––– A
TJ = 25°C
t
on
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Conditions
VDS = 50V, ID = 47A I
D
= 47A
V
GS
= 20V
V
GS
= -20V
MOSFET symbol
showing the
V
DS
= 30V
Conditions
VGS = 10V
f
V
GS
= 0V
V
DS
= 50V ƒ = 1.0MHz V
GS
= 0V, VDS = 0V to 60V
h
V
GS
= 0V, VDS = 0V to 60V
g
T
J
= 25°C, IS = 47A, VGS = 0V
f
integral reverse
p-n junction diode.
Conditions
VGS = 0V, ID = 250μA Reference to 25°C, I
D
= 5mA
c
V
GS
= 10V, ID = 47A
f
V
DS
= VGS, ID = 100μA V
DS
= 60V, VGS = 0V V
DS
= 48V, VGS = 0V, TJ = 125°C
I
D
= 47A
R
G
= 10Ω
V
GS
= 10V
f
VDD = 39V
I
D
= 47A, VDS =0V, VGS = 10V
IRF1018E/S/SLPbF
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance vs. Temperature
Fig 2. Typical Output Characteristics
Fig 6. Typical Gate Charge vs. Gate-to-Source VoltageFig 5. Typical Capacitance vs. Drain-to-Source Voltage
0.1 1 10 100
VDS, Drain-to-Source Voltage (V)
1
10
100
1000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
VGS
TOP 15V
10V
8.0V
6.0V
5.5V
5.0V
4.8V
BOTTOM 4.5V
≤60μs PULSE WIDTH
Tj = 25°C
4.5V
0.1 1 10 100
VDS, Drain-to-Source Voltage (V)
1
10
100
1000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
VGS
TOP 15V
10V
8.0V
6.0V
5.5V
5.0V
4.8V
BOTTOM 4.5V
≤60μs PULSE WIDTH
Tj = 175°C
4.5V
2 3 4 5 6 7 8 9
VGS, Gate-to-Source Voltage (V)
0.1
1
10
100
1000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
TJ = 25°C
TJ = 175°C
V
DS
= 25V
≤
60μs PULSE WIDTH
-60 -40 -20 0 20 40 60 80 100120 140160180
TJ , Junction Temperature (°C)
0.5
1.0
1.5
2.0
2.5
R
D
S
(
o
n
)
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
O
n
R
e
s
i
s
t
a
n
c
e
(
N
o
r
m
a
l
i
z
e
d
)
ID = 47A
V
GS
= 10V
1 10 100
VDS, Drain-to-Source Voltage (V)
0
1000
2000
3000
4000
C
,
C
a
p
a
c
i
t
a
n
c
e
(
p
F
)
V
GS
= 0V, f = 1 MHZ
C
iss
= C
gs
+ Cgd, C
ds
SHORTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
C
oss
C
rss
C
iss
0 102030405060
Q
G
Total Gate Charge (nC)
0
4
8
12
16
V
G
S
,
G
a
t
e
-
t
o
-
S
o
u
r
c
e
V
o
l
t
a
g
e
(
V
)
VDS= 48V
VDS= 30V
VDS= 12V
ID= 47A
IRF1018E/S/SLPbF
4 www.irf.com
Fig 8. Maximum Safe Operating Area
Fig 10. Drain-to-Source Breakdown Voltage
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 11. Typical C
OSS
Stored Energy
Fig 9. Maximum Drain Current vs. Case Temperature
Fig 12. Maximum Avalanche Energy vs. DrainCurrent
0.0 0.5 1.0 1.5 2.0
VSD, Source-to-Drain Voltage (V)
0.1
1
10
100
1000
I
S
D
,
R
e
v
e
r
s
e
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
TJ = 25°C
TJ = 175°C
V
GS
= 0V
0.1 1 10 100
VDS, Drain-toSource Voltage (V)
0.1
1
10
100
1000
10000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
Tc = 25°C Tj = 175°C Single Pulse
1msec
10msec
OPERATION IN THIS AREA LIMITED BY RDS(on)
100μsec
DC
0 10 20 30 40 50 60
V
DS,
Drain-to-Source Voltage (V)
0.0
0.2
0.4
0.6
0.8
E
n
e
r
g
y
(
μ
J
)
25 50 75 100 125 150 175
TC , CaseTemperature (°C)
0
20
40
60
80
I
D
,
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
-60 -40 -20 0 20 40 60 80 100120140160180
TJ , Temperature ( °C )
60
65
70
75
80
V
(
B
R
)
D
S
S
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
B
r
e
a
k
d
o
w
n
V
o
l
t
a
g
e
(
V
)
Id = 5mA
25 50 75 100 125 150 175
Starting TJ, Junction Temperature (°C)
0
50
100
150
200
250
300
350
400
E
A
S
,
S
i
n
g
l
e
P
u
l
s
e
A
v
a
l
a
n
c
h
e
E
n
e
r
g
y
(
m
J
)
I
D
TOP
5.3A
11A
BOTTOM
47A
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