International Rectifier IRF1010NS, IRF1010NL Datasheet
PD - 94171
IRF1010NS
l Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
Description
Advanced HEXFET® Power MOSFETs from
International Rectifier utilize advanced processing
G
IRF1010NL
HEXFET® Power MOSFET
D
S
V
DSS
R
DS(on)
ID = 85A
= 55V
= 11mΩ
techniques to achieve extremely low on-resistance per
silicon area. This benefit, combined with the fast switching
speed and ruggedized device design that HEXFET
power MOSFETs are well known for, provides the
designer with an extremely efficient and reliable device
for use in a wide variety of applications.
The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible onresistance in any existing surface mount package. The
D2Pak is suitable for high current applications because of its
low internal connection resistance and can dissipate up to
2.0W in a typical surface mount application.
The through-hole version (IRF1010NL) is available for lowprofile applications.
2
D Pak
TO-262
IRF1010NLIRF1010NS
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 85
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 60 A
I
DM
PD @TC = 25°C Power Dissipation 180 W
V
GS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt 3.6 V/ns
T
J
T
STG
Pulsed Drain Current 290
Linear Derating Factor 1.2 W/°C
Gate-to-Source Voltage ± 20 V
Avalanche Current 43 A
Repetitive Avalanche Energy 18 mJ
Operating Junction and -55 to + 175
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m)
°C
Thermal Resistance
Parameter Typ. Max. Units
R
θJC
R
θJA
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Junction-to-Case ––– 0.85
Junction-to-Ambient ( PCB Mounted,steady-state)** ––– 40 °C/W
02/14/02
IRF1010NS/IRF1010NL
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
E
AS
Drain-to-Source Breakdown Voltage 55 ––– ––– VVGS = 0V, ID = 250µA
/∆T
Breakdown Voltage Temp. Coefficient ––– 0.058 ––– V/°C Reference to 25°C, ID = 1mA
J
Static Drain-to-Source On-Resistance ––– ––– 11 mΩ VGS = 10V, ID = 43A
Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA
Forward Transconductance 32 ––– ––– SVDS = 25V, ID = 43A
Drain-to-Source Leakage Current
––– ––– 25
––– ––– 250 VDS = 44V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V
Gate-to-Source Reverse Leakage ––– ––– -100
VDS = 55V, VGS = 0V
µA
nA
VGS = -20V
Total Gate Charge ––– ––– 120 ID = 43A
Gate-to-Source Charge ––– ––– 19 nC VDS = 44V
Gate-to-Drain ("Miller") Charge ––– ––– 41 VGS = 10V, See Fig. 6 and 13
Turn-On Delay Time ––– 13 ––– VDD = 28V
Rise Time ––– 76 ––– ID = 43A
Turn-Off Delay Time ––– 39 ––– RG = 3.6Ω
ns
Fall Time ––– 48 ––– VGS = 10V, See Fig. 10
4.5
Internal Drain Inductance
Internal Source Inductance ––– –––
––– –––
7.5
Between lead,
6mm (0.25in.)
nH
from package
and center of die contact
Input Capacitance ––– 3210 ––– VGS = 0V
Output Capacitance ––– 690 ––– VDS = 25V
Reverse Transfer Capacitance ––– 140 ––– pF ƒ = 1.0MHz, See Fig. 5
Single Pulse Avalanche Energy ––– 1030250 mJ I
= 4.3A, L = 270µH
AS
D
G
S
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Continuous Source Current MOSFET symbol
(Body Diode)
Pulsed Source Current integral reverse
(Body Diode)
––– –––
––– –––
85
290
showing the
A
p-n junction diode.
G
Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 43A, VGS = 0V
Reverse Recovery Time ––– 69 100 ns TJ = 25°C, IF = 43A
Reverse Recovery Charge ––– 220 230 nC di/dt = 100A/µs
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Starting T
RG = 25Ω, I
I
SD
= 25°C, L = 270µH
J
= 43A, VGS=10V (See Figure 12)
AS
≤ 43A, di/dt ≤ 210A/µs, V
DD
≤ V
(BR)DSS
,
TJ ≤ 175°C
Pulse width ≤ 400µs; duty cycle ≤ 2%.
This is a typical value at device destruction and
This is a calculated value limited to T
= 175°C .
J
Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 75A.
Uses IRF1010N data and test conditions.
** When mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to
application note #AN-994.
represents operation outside rated limits.
2 www.irf.com
D
S
IRF1010NS/IRF1010NL
1000
100
10
D
I , Drain-to-Source Current (A)
1
0.1 1 10 100
100
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM
4.5V
4.5V
20µs PULSE WIDTH
T = 25 C
J
V , Drain-to-Source Voltage (V)
DS
°
T = 25 C
J
°
T = 175 C
J
1000
100
10
D
I , Drain-to-Source Current (A)
1
0.1 1 10 100
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM
4.5V
4.5V
20µs PULSE WIDTH
T = 175 C
J
V , Drain-to-Source Voltage (V)
DS
°
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
2.5
2.0
°
I =
D
85A
1.5
10
1.0
(Normalized)
D
I , Drain-to-Source Current (A)
V = 25V
DS
1
4 6 8 10 12
V , Gate-to-Source Voltage (V)
GS
20µs PULSE WIDTH
Fig 3. Typical Transfer Characteristics
0.5
DS(on)
R , Drain-to-Source On Resistance
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
T , Junction Temperature( C)
J
Fig 4. Normalized On-Resistance
V =
GS
°
10V
Vs. Temperature
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