International Rectifier IRF1010ES, IRF1010EL Datasheet
PD - 91720
IRF1010ES
IRF1010EL
l Advanced Process Technology
l Surface Mount (IRF1010ES)
l Low-profile through-hole (IRF1010EL)
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
Description
G
Advanced HEXFET® Power MOSFETs from International
Rectifier utilize advanced processing techniques to
achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and
ruggedized device design that HEXFET power MOSFETs
are well known for, provides the designer with an
extremely efficient and reliable device for use in a wide
variety of applications.
The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible onresistance in any existing surface mount package. The
D2Pak is suitable for high current applications because of its
low internal connection resistance and can dissipate up to
2.0W in a typical surface mount application.
The through-hole version (IRF1010EL) is available for lowprofile applications.
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 84
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 59 A
I
DM
PD @TC = 25°C Power Dissipation 200 W
V
GS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt 4.0 V/ns
T
J
T
STG
Pulsed Drain Current 330
Linear Derating Factor 1.4 W/°C
Gate-to-Source Voltage ± 20 V
Avalanche Current 50 A
Repetitive Avalanche Energy 17 mJ
Operating Junction and -55 to + 175
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m)
HEXFET® Power MOSFET
D
V
R
DS(on)
= 60V
DSS
= 12mΩ
ID = 84A
S
D2Pak
IRF1010ES
TO-262
IRF1010EL
°C
Thermal Resistance
Parameter Typ. Max. Units
R
θJC
R
θJA
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Junction-to-Case ––– 0.75
Junction-to-Ambient (PCB mount)** ––– 40
°C/W
02/14/02
IRF1010ES/IRF1010EL
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
E
AS
Drain-to-Source Breakdown Voltage 60 ––– ––– VVGS = 0V, ID = 250µA
/∆T
Breakdown Voltage Temp. Coefficient ––– 0.064 ––– V/°C Reference to 25°C, ID = 1mA
J
Static Drain-to-Source On-Resistance ––– ––– 12 mΩ VGS = 10V, ID = 50A
Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA
Forward Transconductance 69 ––– ––– SVDS = 25V, ID = 50A
Drain-to-Source Leakage Current
––– ––– 25
––– ––– 250 VDS = 48V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V
Gate-to-Source Reverse Leakage ––– ––– -100
VDS = 60V, VGS = 0V
µA
nA
VGS = -20V
Total Gate Charge ––– ––– 130 ID = 50A
Gate-to-Source Charge ––– ––– 28 nC VDS = 48V
Gate-to-Drain ("Miller") Charge ––– ––– 44 VGS = 10V, See Fig. 6 and 13
Turn-On Delay Time ––– 12 ––– VDD = 30V
Rise Time ––– 78 ––– ID = 50A
Turn-Off Delay Time ––– 48 ––– RG = 3.6Ω
ns
Fall Time ––– 53 ––– VGS = 10V, See Fig. 10
4.5
Internal Drain Inductance
Internal Source Inductance ––– –––
––– –––
7.5
Between lead,
6mm (0.25in.)
nH
from package
and center of die contact
Input Capacitance ––– 3210 ––– VGS = 0V
Output Capacitance ––– 690 ––– VDS = 25V
Reverse Transfer Capacitance ––– 140 ––– pF ƒ = 1.0MHz, See Fig. 5
Single Pulse Avalanche Energy ––– 1180320 mJ I
= 50A, L = 260µH
AS
D
G
S
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Continuous Source Current MOSFET symbol
(Body Diode)
Pulsed Source Current integral reverse
(Body Diode)
––– –––
––– –––
84
330
showing the
A
p-n junction diode.
G
Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 50A, VGS = 0V
Reverse Recovery Time ––– 73 110 ns TJ = 25°C, IF = 50A
Reverse Recovery Charge ––– 220 330 nC di/dt = 100A/µs
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11)
Starting T
RG = 25Ω, I
(See Figure 12)
I
SD
= 25°C, L = 260µH
J
= 50A, VGS =10V
AS
≤ 50A, di/dt ≤ 230A/µs, V
DD
≤ V
(BR)DSS
TJ ≤ 175°C
Pulse width ≤ 400µs; duty cycle ≤ 2%.
This is a typical value at device destruction and represents
operation outside rated limits.
This is a calculated value limited to T
= 175°C .
J
Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 75A.
,
**When mounted on 1" square PCB (FR-4 or G-10 Material). For
recommended footprint and soldering techniques refer to application
note #AN-994
2 www.irf.com
D
S
IRF1010ES/IRF1010EL
1000
100
10
D
I , Drain-to-Source Current (A)
1
0.1 1 10 100
1000
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM
4.5V
4.5V
20µs PULSE WIDTH
T = 25 C
J
V , Drain-to-Source Voltage (V)
DS
°
1000
100
D
I , Drain-to-Source Current (A)
10
0.1 1 10 100
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM
4.5V
4.5V
20µs PULSE WIDTH
T = 175 C
V , Drain-to-Source Voltage (V)
DS
°
J
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
3.0
I =
D
84A
2.5
°
T = 25 C
J
°
T = 175 C
J
100
D
I , Drain-to-Source Current (A)
V = 25V
DS
10
4 5 6 7 8 9 10 11
V , Gate-to-Source Voltage (V)
GS
20µs PULSE WIDTH
Fig 3. Typical Transfer Characteristics
2.0
1.5
(Normalized)
1.0
0.5
DS(on)
R , Drain-to-Source On Resistance
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
T , Junction Temperature ( C)
J
Fig 4. Normalized On-Resistance
V =
10V
GS
°
Vs. Temperature
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