International Rectifier IRCZ34 Datasheet
HEXFET® Power MOSFET
l Dynamic dv/dt Rating
l Current Sense
l 175°C Operating Temperature
l Fast Switching
l Ease of Paralleling
l Simple Drive Requirements
Description
Third Generation HEXFETs from International Rectifier provide the designer with
the best combination of fast switching, ruggedized device, low on-resistance and
cost-effectiveness.
The HEXSence device provides an accurate fraction of the drain current through
the additional two leads to be used for control or protection of the device. These
devices exhibit similar electrical and thermal characteristics as their IRF-series
equivalent part numbers. The provision of a kelvin source connection effectively
eliminates problems of common source inductance when the HEXSence is
used as a fast, high-current switch in non current-sensing applications.
PD - 9.590A
IRCZ34
V
= 60V
DSS
R
= 0.050Ω
DS(on)
ID = 30A
TO-220 HexSense
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 30
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 21
I
DM
PD @TC = 25°C Power Dissipation 88 W
V
GS
E
AS
dv/dt Peak Diode Recovery dv/dt 4.5 A
T
J
T
STG
Pulsed Drain Current 120
Linear Derating Factor 0.59 W/°C
Gate-to-Source Voltage ±20 V
Single Pulse Avalanche Energy 15 mJ
Operating Junction and -55 to + 175
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Mounting Torque, 6-32 or screw 10 lbf•in (1.1 N•m)
Thermal Resistance
Parameter Min. Max. Units
R
θJC
R
θCS
R
θJA
** When mounted on FR-4 board using minimum recommended footprint. For recommended footprint and soldering techniques refer to application note #AN-994.
Junction-to-Case — — 1.7
Case-to-Sink, Flat, Greased Surface — 0.50 —
Junction-to-Ambient — — 62
A
°C
°C/W
C-7
IRCZ34
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(ON)
V
GS(th)
g
fs
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
C
C
iss
C
oss
C
rss
r Current Sensing Ratio 1340 ––– 1480 ––– ID = 30A, VGS = 10V
C
oss
Drain-to-Source Breakdown Voltage 60 ––– ––– V VGS = 0V, ID = 250µA
/∆T
Breakdown Voltage Temp. Coefficient ––– 0.065 ––– V/°C Reference to 25°C, ID = 1mA
J
Static Drain-to-Source On-Resistance ––– ––– 0.050 Ω VGS = 10V, ID = 18A
Gate Threshold Voltage 2.0 ––– 4 .0 V VDS = VGS, ID = 250µA
Forward Transconductance 9.4 ––– ––– S VDS = 25V, ID = 18A
Drain-to-Source Leakage CurrentI
––– ––– 25 VDS = 60V, VGS = 0V
––– ––– 250 VDS = 48V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V
Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -20V
Total Gate Charge ––– ––– 46 ID = 30A
Gate-to-Source Charge ––– ––– 11 nC VDS = 48V
Gate-to-Drain ("Miller") Charge ––– ––– 22 VGS = 10V, See Fig. 6 and 13
Turn-On Delay Time ––– 13 ––– VDD = 30V
Rise Time ––– 100 ––– ID = 30A
Turn-Off Delay Time ––– 29 ––– RG = 12Ω
Fall Time ––– 52 ––– RD = 1.0Ω, See Fig. 10
Between lead,
Internal Drain Inductance ––– 4.5 –––
Internal Source Inductance ––– 7.5 –––
6 mm (0.25 in.)
from package
nH
and center of
die contact
Input Capacitance ––– 1300 ––– VGS = 0V
Output Capacitance ––– 640 ––– pF VDS = 25V
Reverse Transfer Capacitance ––– 96 ––– ƒ = 1.0MHz, See Fig. 5
Output Capacitance of Sensing Cells ––– 9.0 ––– pF VGS = 0V, VDS = 25V, ƒ = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
V
DD
RG = 25Ω, I
C-8
Continuous Source Current MOSFET symbol
(Body Diode) showing the
Pulsed Source Current integral reverse
(Body Diode) p-n junction diode.
––– ––– 30
––– ––– 120
Diode Forward Voltage ––– ––– 1.6 V TJ = 25°C, IS = 30A, VGS = 0V
Reverse Recovery Time –– – 120 230 ns TJ = 25°C, IF = 30A
Reverse Recovery Charge ––– 0.70 1.4 nC di/dt = 100A/µs
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
I
≤ 30A, di/dt ≤ 200A/µs, V
SD
TJ ≤ 175°C
= 25V, starting TJ = 25°C, L = 0.019mH
= 30A. (See Figure 12)
AS
Pulse width ≤ 300µs; duty cycle ≤ 2%.
D
A
DD
≤ V
(BR)DSS
,
G
S
Loading...