INTERNATIONAL RECTIFIER IR 2183S SMD SMD#IR

Data Sheet No. PD60173-E

IR2183(4

) (S)

HALF-BRIDGE DRIVER

Features

Floating channel designed for bootstrap operation

•

Fully operational to +600V
Tolerant to negative transient voltage
dV/dt immune

Gate drive supply range from 10 to 20V

•

Undervoltage lockout for both channels

•

3.3V and 5V input logic compatible

•

Matched propagation delay for both channels

•

Logic and power ground +/- 5V offset.

•

Lower di/dt gate driver for better noise immunity

•

Output source/sink current capability 1.4A/1.8A

•

Description

The IR2183(4)(S) are high voltage,
high speed power MOSFET and IGBT
drivers with dependent high and low
side referenced output channels. Pro­prietary HVIC and latch immune
CMOS technologies enable rugge­dized monolithic construction. The
logic input is compatible with standard
CMOS or LSTTL output, down to 3.3V
logic. The output drivers feature a high
pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to
drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 600 volts.

IR2181/IR2183/IR2184 Feature Comparison

Part

2181 COM

21814

2183 Internal 500ns COM

21834

2184 Internal 500ns COM

21844

Packages

8-Lead SOIC

IR2183S

8-Lead PDIP

IR2183

Input

logic

HIN/LIN no none

HIN/LIN yes

IN/SD yes

Cross­conduction
prevention

logic

Dead-Time Ground Pins Ton/Toff

Program 0.4 ~ 5 us VSS/COM

Program 0.4 ~ 5 us VSS/COM

14-Lead PDIP

IR21834

VSS/COM

14-Lead SOIC

IR21834S

180/220 n s

180/220 n s

680/270 n s

T ypical Connection

up to 600V

V

CC

HIN

LIN

(Refer to Lead Assignment for correct pin
configuration) This/These diagram(s) show
electrical connections only. Please refer to our
Application Notes and DesignTips for proper circuit
board layout.

V
HIN
LIN

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V

CC

B

HO

V

S

LOCOM

IR2183

V
HIN

V

TO

LOAD

up to 600V

HO

V

V

CC

CC

LIN

SS

HIN
LIN
DT
V

R

DT

B

V

S

COM

SS

LO

IR21834

TO

LOAD

IR2183(4

) (S)

Absolute Maximum Ratings

Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage param­eters are absolute voltages referenced to COM. The thermal resistance and power dissipation ratings are measured
under board mounted and still air conditions.

Symbol Definition Min. Max. Units

V

B

V

S

V

HO

V

CC

V

LO

DT Programmable dead-time pin voltage (IR21834 only) VSS - 0.3 V

V

IN

V

SS

dVS/dt Allowable offset supply voltage transient — 50 V/ns

P

D

Rth

JA

T

J

T

S

T

L

High side floating absolute voltage -0.3 625
High side floating supply offset voltage VB - 25 VB + 0.3
High side floating output voltage VS - 0.3 V

+ 0.3

B

Low side and logic fixed supply voltage -0.3 25
Low side output voltage -0.3 VCC + 0.3

+ 0.3

CC

Logic input voltage (HIN &
Logic ground (IR21834 only) V

)V

LIN

- 0.3 V

SS

- 25 V

CC

SS

CC

+ 10

+ 0.3

Package power dissipation @ TA ≤ +25°C (8-lead PDIP) — 1.0

(8-lead SOIC) — 0.625
(14-lead PDIP) — 1.6
(14-lead SOIC) — 1.0

Thermal resistance, junction to ambient (8-lead PDIP) — 125

(8-lead SOIC) — 200

(14-lead PDIP) — 75

(14-lead SOIC) — 120
Junction temperature — 150
Storage temperature -50 150
Lead temperature (soldering, 10 seconds) — 300

V

W

°C/W

°C

Recommended Operating Conditions

The Input/Output logic timing diagram is shown in figure 1. For proper operation the device should be used within the
recommended conditions. The VS and VSS offset rating are tested with all supplies biased at 15V differential.

Symbol Definition Min. Max. Units

VB High side floating supply absolute voltage VS + 10 VS + 20

V

S

V

HO

V

CC

V

LO

V

IN

DT Programmable dead-time pin voltage (IR21834 only) V

V

SS

T

A

Note 1: Logic operational for VS of -5 to +600V. Logic state held for VS of -5V to -VBS. (Please refer to the Design Tip
DT97-3 for more details).
Note 2: HIN and LIN pins are internally clamped with a 5.2V zener diode.

High side floating supply offset voltage Note 1 600
High side floating output voltage V

S

V

B

Low side and logic fixed supply voltage 10 20
Low side output voltage 0 V
Logic input voltage (HIN &

)V

LIN

SS
SS

CC

V

+ 5

SS

V

CC

Logic ground (IR21834 only) -5 5
Ambient temperature -40 125 °C

V

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IR2183(4

) (S)

Dynamic Electrical Characteristics

V

(VCC, VBS) = 15V, VSS = COM, CL = 1000 pF, TA = 25°C, DT = VSS unless otherwise specified.

BIAS

Symbol Definition Min. Typ. Max. Units Test Conditions

t

on

t

off

MT Delay matching | ton - t

t
t

DT Deadtime: LO turn-off to HO turn-on(DT

MDT Deadtime matching = | DT

Turn-on propagation delay — 180 270 VS = 0V
Turn-off propagation delay — 220 330 VS = 0V or 600V

off

|

Turn-on rise time — 40 60 VS = 0V

r

Turn-off fall time — 20 35 VS = 0V

f

LO-HO) &

HO turn-off to LO turn-on (DT

LO-HO

- DT

HO-LO)

HO-LO

— 035

280 400 520 RDT= 0
456µsec RDT = 200k (IR21834)
— 0 50 RDT=0

|

— 0 600 RDT = 200k (IR21834)

nsec

nsec

Static Electrical Characteristics

V

(VCC, VBS) = 15V, VSS = COM, DT= VSS and TA = 25°C unless otherwise specified. The VIL, VIH and I

BIAS

parameters are referenced to VSS/COM and are applicable to the respective input leads: HIN and LIN. The VO, IO and Ron
parameters are referenced to COM and are applicable to the respective output leads: HO and LO.

Symbol Definition Min. Typ. Max. Units T est Conditions

V

IH

V

V

OH

V

OL

I

LK

I

QBS

I

QCC

I

IN+

I

IN-

V

CCUV+VCC

V

BSUV+

V

CCUV-

V

BSUV-

V

CCUVH

V

BSUVH

I

O+

I

O-

Logic “1” input voltage for HIN & logic “0” for
Logic “0” input voltage for HIN & logic “1” for

IL

High level output voltage, V
Low level output voltage, V
Offset supply leakage current ——50 VB = VS = 600V
Quiescent VBS supply current 20 60 150 V
Quiescent VCC supply current 0.4 1.0 1.6 mA VIN = 0V or 5V
Logic “1” input bias current — 5 20 HIN = 5V,
Logic “0” input bias current — 1 2 HIN = 0V,

and VBS supply undervoltage positive going 8.0 8.9 9.8
threshold
VCC and V
threshold
Hysteresis 0.3 0.7 —

Output high short circuit pulsed current 1.4 1.9 — VO = 0V,

Output low short circuit pulsed current 1.8 2.3 — VO = 15V,

supply undervoltage negative going 7.4 8.2 9.0

BS

BIAS

O

- V

O

LIN
LIN

2.7 —— VCC = 10V to 20V

——0.8 VCC = 10V to 20V
——1.2 IO = 0A
——0.1 IO = 0A

V

µA

µA

V

A

IN

= 0V or 5V

IN

LIN

LIN

PW ≤ 10 µs

PW ≤ 10 µs

= 0V
= 5V

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