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SMPS MOSFET
IRFIB5N65APbF
PD-94837
HEXFET® Power MOSFET
Applications
l Switch Mode Power Supply (SMPS)
l Uninterruptible Power Supply
l High Speed Power Switching
l High Voltage Isolation = 2.5KVRMS
l Lead-Free
V
DSS
R
DS(on)
max I
650V 0.93Ω 5.1A
Benefits
l Low Gate Charge Qg results in Simple
Drive Requirement
l Improved Gate, Avalanche and Dynamic
dv/dt Ruggedness
l Fully Characterized Capacitance and
TO-220 Full-Pak
SDG
Avalanche Voltage and Current
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 5.1
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 3.2 A
I
DM
PD @TC = 25°C Power Dissipation 60 W
V
GS
dv/dt Peak Diode Recovery dv/dt 2.8 V/ns
T
J
T
STG
Pulsed Drain Current 21
Linear Derating Factor 0.48 W/°C
Gate-to-Source Voltage ± 30 V
Operating Junction and -55 to + 150
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torqe, 6-32 or M3 screw 10 lbf•in (1.1N•m)
°C
D
Typical SMPS Topologies
l Single Transistor Flyback
l Single Transistor Forward
Notes through are on page 8
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11/13/03
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IRFIB5N65APbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(on)
V
GS(th)
I
DSS
I
GSS
Dynamic @ TJ = 25°C (unless otherwise specified)
g
fs
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
C
oss
C
oss
C
eff. Effective Output Capacitance ––– 84 ––– VGS = 0V, VDS = 0V to 520V
oss
Avalanche Characteristics
E
AS
I
AR
E
AR
Thermal Resistance
R
Junction-to-Case ––– 2.1
θJC
R
Junction-to-Ambient ––– 65 °C/W
θJA
Diode Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
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Drain-to-Source Breakdown Voltage 650 ––– ––– V VGS = 0V, ID = 250µA
/∆T
Breakdown Voltage Temp. Coefficient ––– 0.67 ––– V/°C Reference to 25°C, ID = 1mA
J
Static Drain-to-Source On-Resistance ––– ––– 0.93 Ω VGS = 10V, ID = 3.1.A
Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA
Drain-to-Source Leakage Current
––– ––– 25
––– ––– 250 VDS = 520V, VGS = 0V, TJ = 125°C
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 30V
Gate-to-Source Reverse Leakage ––– ––– -100
VDS = 650V, VGS = 0V
µA
nA
V
= -30V
GS
Parameter Min. Typ. Max. Units Conditions
Forward Transconductance 3.9 ––– ––– S VDS = 50V, ID = 3.1A
Total Gate Charge ––– ––– 48 ID = 5.2A
Gate-to-Source Charge ––– ––– 12 nC VDS = 400V
Gate-to-Drain ("Miller") Charge ––– ––– 19 VGS = 10V, See Fig. 6 and 13
Turn-On Delay Time ––– 14 ––– VDD = 325V
Rise Time ––– 20 ––– ID = 5.2A
Turn-Off Delay Time ––– 34 ––– RG = 9.1Ω
ns
Fall Time ––– 18 ––– RD = 62Ω,See Fig. 10
Input Capacitance ––– 1417 ––– VGS = 0V
Output Capacitance ––– 177 ––– VDS = 25V
Reverse Transfer Capacitance ––– 7.0 ––– pF ƒ = 1.0MHz, See Fig. 5
Output Capacitance ––– 1912 ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
Output Capacitance ––– 48 ––– VGS = 0V, VDS = 520V, ƒ = 1.0MHz
Parameter Typ. Max. Units
Single Pulse Avalanche Energy ––– 325 mJ
Avalanche Current ––– 5.2 A
Repetitive Avalanche Energy ––– 6 mJ
Parameter Typ. Max. Units
Parameter Min. Typ. Max. Units Conditions
Continuous Source Current MOSFET symbol
(Body Diode)
Pulsed Source Current integral reverse
(Body Diode)
––– –––
––– –––
Diode Forward Voltage ––– ––– 1.5 V TJ = 25°C, IS = 5.2A, VGS = 0V
Reverse Recovery Time ––– 493 739 ns TJ = 25°C, IF = 5.2A
Reverse RecoveryCharge ––– 2.1 3.2 µC di/dt = 100A/µs
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
5.2
21
showing the
A
p-n junction diode.
G
D
S
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IRFIB5N65APbF
100
10
1
D
I , Drain-to-Source Current (A)
0.1
0.1 1 10 100
100
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM
4.5V
20µs PULSE WIDTH
4.5V
T = 25 C
J
V , Drain-to-Source Voltage (V)
DS
°
100
10
1
D
I , Drain-to-Source Current (A)
0.1
1 10 100
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM
4.5V
20µs PULSE WIDTH
T = 150 C
J
V , Drain-to-Source Voltage (V)
DS
4.5V
°
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
3.0
I =
D
5.2A
2.5
10
1
D
I , Drain-to-Source Current (A)
0.1
4.0 5.0 6.0 7.0 8.0 9.0
°
T = 150 C
J
°
T = 25 C
J
V = 100V
20µs PULSE WIDTH
V , Gate-to-Source Voltage (V)
GS
DS
Fig 3. Typical Transfer Characteristics
2.0
1.5
(Normalized)
1.0
0.5
DS(on)
R , Drain-to-Source On Resistance
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
T , Junction Temperature ( C)
J
Fig 4. Normalized On-Resistance
V =
GS
°
10V
Vs. Temperature
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IRFIB5N65APbF
A
2000
1600
1200
800
V = 0V, f = 1MHz
GS
C = C + C , C SHORTED
iss gs gd ds
C = C
rss gd
C = C + C
oss ds gd
C
iss
C
oss
C, Capacitance (pF)
400
0
1 10 100 1000
C
rss
V , Drain-to-Source Voltage (V)
DS
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
100
20
I =
5.2A
16
12
8
4
GS
V , Gate-to-Source Voltage (V)
D
400V
V = 520V
DS
V = 325V
DS
V = 130V
DS
FOR TEST CIRCUIT
0
0 10 20 30 40 50
Q , Total Gate Charge (nC)
G
SEE FIGURE
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
13
10us
10
°
T = 150 C
J
1
°
T = 25 C
SD
I , Reverse Drain Current (A)
0.1
0.2 0.4 0.6 0.8 1.0 1.2
V ,Source-to-Drain Voltage (V)
SD
J
V = 0 V
GS
Fig 7. Typical Source-Drain Diode
10
1
D
I , Drain Current (A)I , Drain Current (A)
°
= 25 C
C
T T= 150 C
Single Pulse
0.1
10 100 1000 10000
°
J
V , Drain-to-Source Voltage (V)
DS
100us
1ms
10ms
Fig 8. Maximum Safe Operating Area
Forward Voltage
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6.0
5.0
4.0
3.0
IRFIB5N65APbF
R
D.U.T.
D
+
V
DD
-
V
DS
V
GS
R
G
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
2.0
D
I , Drain Current (A)
1.0
Fig 10a. Switching Time Test Circuit
V
DS
90%
0.0
25 50 75 100 125 150
T , Case Temperature ( C)
C
°
10%
V
GS
Fig 9. Maximum Drain Current Vs.
t
d(on)tr
t
d(off)tf
Case Temperature
Fig 10b. Switching Time Waveforms
10
thJC
D = 0.50
1
0.20
0.10
P
1 2
DM
t
1
t
2
0.05
0.1
0.02
Thermal Response (Z )
0.01
0.01
SINGLE PULSE
(THERMAL RESPONSE)
0.00001 0.0001 0.001 0.01 0.1 1 10
t , Rectangular Pulse Duration (sec)
1
Notes:
1. Duty factor D = t / t
2. Peak T = P x Z + T
J DM thJC C
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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IRFIB5N65APbF
A
A
15V
DRIVER
+
-
V
R
20V
V
DS
G
t
L
D.U.T
I
AS
0.01
p
Ω
Fig 12a. Unclamped Inductive Test Circuit
V
(BR)DSS
t
p
I
AS
Fig 12b. Unclamped Inductive Waveforms
Q
G
10 V
Q
GS
Q
GD
DD
800
TOP
600
400
200
AS
E , Single Pulse Avalanche Energy (mJ)
0
25 50 75 100 125 150
Starting T , Junction Temperature ( C)
J
BOTTOM
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
800
I
D
2.3A
3.3A
5.2A
°
V
G
Charge
780
760
Fig 13a. Basic Gate Charge Waveform
Current Regulator
Same Type as D.U.T.
50KΩ
.2µF
12V
V
GS
.3µF
D.U.T.
3mA
I
G
Current Sampling Resistors
+
V
DS
-
I
D
Fig 13b. Gate Charge Test Circuit
740
DSav
720
V , Avalanche Voltage (V)
700
0123456
I , Avalanche Current (A)
av
Fig 12d. Typical Drain-to-Source Voltage
Vs. Avalanche Current
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IRFIB5N65APbF
Peak Diode Recovery dv/dt Test Circuit
D.U.T
+
-
R
G
Driver Gate Drive
P.W.
+
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
-
• dv/dt controlled by R
• Driver same type as D.U.T.
G
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
Period
D =
Period
P. W .
+
+
V
DD
-
VGS=10V
*
D.U.T. ISDWaveform
Reverse
Recovery
Current
Re-Applied
Voltage
D.U.T. VDSWaveform
Inductor Curent
* V
= 5V for Logic Level Devices
GS
Body Diode Forward
Current
di/dt
Diode Recovery
dv/dt
Body Diode Forward Drop
Ripple ≤ 5%
V
DD
I
SD
Fig 14. For N-Channel HEXFET® Power MOSFETs
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IRFIB5N65APbF
TO-220 Full-Pak Package Outline
Dimensions are shown in millimeters (inches)
TO-220 Full-Pak Part Marking Information
E XAMPL E : TH IS IS AN IRF I840G
WITH ASSEMBLY
LOT CODE 3432
ASS EMB LE D ON WW 24 1999
IN T HE AS SE MB L Y L INE "K"
Note: "P" in assembly line
position indicates "Lead-Free"
INT E R N AT IO NAL
RECTIFIER
LOGO
AS S EM B L Y
LOT CODE
IR FI840 G
924K
34 32
PART NUMBE R
DATE CODE
YEAR 9 = 1999
WEE K 24
LINE K
Notes:
Repetitive rating; pulse width limited by
Pulse width ≤ 300µs; duty cycle ≤ 2%.
max. junction temperature. (See fig. 11)
C
eff. is a fixed capacitance that gives the same charging time
Starting T
RG = 25Ω, I
I
SD
= 25°C, L = 24mH
J
AS
≤ 5.2A, di/dt ≤ 90A/µs, V
= 5.2A. (See Figure 12)
≤ V
DD
(BR)DSS
,
oss
as C
oss
while V
t=60s, f=60Hz
is rising from 0 to 80% V
DS
DSS
TJ ≤ 150°C
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.11/03
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