International Rectifier 40TPS12, 40TPS08 Datasheet
PHASE CONTROL SCR
Next Data SheetIndex
Previous Datasheet
To Order
Bulletin I2107
40TPS.. SERIES
V
T
< 1.45V @ 40A
Description/Features
The 40TPS... new series of silicon controlled rectifiers are specifically designed for medium power
switching and phase control applications. The
glass passivation technology used has reliable
operation up to 125° C junction temperature.
Typical applications are in input rectification (soft
start) and these products are designed to be used
with International Rectifier input diodes, switches
and output rectifiers which are available in identical package outlines.
I
TSM
= 400A
VR/ VD= 1200V
Major Ratings and Characteristics
Characteristics 40TPS... Units
I
T(AV)
I
RMS
V
I
TSM
V
dv/dt 500 V/µs
di/dt 150 A/µs
T
Sinusoidal 35 A
waveform
V
/
RRM
DRM
@ 40 A, TJ = 25°C 1.45 V
T
J
55 A
800 and 1200 V
400 A
- 40 to 125 °C
TO-247AC
1
09-96 rev. 1.0
40TPS.. Series
Next Data SheetIndex
Previous Datasheet
To Order
V oltage Ratings
Part Number
V
RRM/VDRM
peak and off-state voltage peak reverse voltage 125°C
, max. repetitive V
, maximum non repetitive I
RSM
VVmA
40TPS08 800 900 5
40TPS12 1200 1300
Absolute Maximum Ratings
Parameters 40TPS.. Units Conditions
I
Max. Average On-state Current 35 A 50% duty cycle @ TC = 85° C, sinusoidal wave form
T(AV)
I
Max. Continuous RMS 5 5
T(RMS)
On-state Current. As AC switch
I
Max. Peak One Cycle Non-Repetitive 335 A2s 10ms Sine pulse, rated V
TSM
Surge Current 400 10ms Sine pulse, no voltage reapplied TJ = TJ max.
I2t Max. I2t for fusing 560 10ms Sine pulse, rated V
800 10ms Sine pulse, no voltage reapplied
applied Initial
RRM
applied
RRM
RRM/IDRM
I2√t Max. I2√t for fusing 8000 A2√s t = 0.1 to 10ms, no voltage reapplied
V
Low level value of threshold 1.02 V TJ = 125°C
T(TO)1
Voltage
V
High level value of threshold 1.23
T(TO)2
Voltage
r
Low level value of On-state 9.74 mΩ
t1
slope resistance
r
High level value of On-state 7.50
t2
slope resistance
V
Max. Peak On-state Voltage 1.85 V @ 110A, TJ = 25°C
TM
di/dt Max. rate of rise of turned-on Current 150 A/µs TJ = 25°C
I
Max. holding Current 200 mA
H
I
Max. latching Current 400
L
I
/ Max. Reverse and Direct 0.5 TJ = 25°C
RRM
I
Leakage Current 5.0 TJ = 125°C
DRM
VR = rated V
dv/dt Max. rate of rise of off-state Voltage 500 V/µs TJ = 125°C
RRM
/ V
DRM
2
09-96 rev. 1.0
Loading...