International Rectifier 25TTS12STRR, 25TTS12STRL, 25TTS08STRR, 25TTS08STRL Datasheet
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Bulletin I2117
25TTS..S SERIES
PHASE CONTROL SCR
Description/Features
The 25TTS..S new series of silicon controlled
rectifiers are specifically designed for medium
power switching and phase control applications.
The glass passivation technology used has reliable operation up to 125° C junction temperature.
Typical applications are in input rectification (soft
start) and these products are designed to be used
with International Rectifier input diodes, switches
and output rectifiers which are available in identical package outlines.
V
I
TSM
T
< 1.25V @ 16A
= 250A
VR/ VD= 1200V
Output Current in Typical Applications
Applications Single-phase Bridge Three-phase Bridge Units
NEMA FR-4 or G10 glass fabric-based epoxy
with 4 oz (140µm) copper
3.5 5.5
Aluminum IMS, R
Aluminum IMS with heatsink, R
TA = 55°C, TJ = 125°C, footprint 300mm
thCA
Major Ratings and Characteristics
Characteristics 25TTS..S Units
I
T(AV)
I
RMS
V
I
TSM
V
dv/dt 500 V/µs
di/dt 150 A/µs
T
Sinusoidal 16 A
waveform
V
/
RRM
DRM
@ 16 A, TJ = 25°C 1.25 V
T
J
= 15°C/W 8.5 13.5 A
= 5°C/W 16.5 25.0
thCA
2
25 A
800 and 1200 V
250 A
D2 PAK (SMD-220)
- 40 to 125 °C
1
25TTS.. S Series
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Voltage Ratings
Part Number
25TTS08S 800 800 5
25TTS12S 1200 1200
Absolute Maximum Ratings
V
, maximum V
RRM
, maximum I
DRM
RRM/IDRM
peak reverse voltage peak direct voltage 125°C
VVmA
Parameters 25TTS..S Units Conditions
I
Max. Average On-state Current 16 A 50% duty cycle @ TC = 94° C, sinusoidal wave form
T(AV)
I
Max. RMS On-state Current 25
RMS
I
Max. Peak One Cycle Non-Repetitive 210 10ms Sine pulse, rated V
TSM
Surge Current 250 10ms Sine pulse, no voltage reapplied
I2t Max. I2t for fusing 220 A2s 10ms Sine pulse, rated V
310 10ms Sine pulse, no voltage reapplied
I2√t Max. I2√t for fusing 3100 A2√s t = 0.1 to 10ms, no voltage reapplied
V
Max. On-state Voltage Drop 1.25 V @ 16A, TJ = 25°C
TM
r
V
On-state slope resistance 12.0 mΩ TJ = 125°C
t
Threshold Voltage 1.0 V
T(TO)
IRM/IDMMax.Reverse and Direct 0.5 mA TJ = 25 °C
Leakage Current 5.0 TJ = 125 °C
I
Max. Holding Current 100 mA Anode Supply = 6V, Resistive load, Initial IT=1A
H
I
Max. Latching Current 200 mA Anode Supply = 6V, Resistive load
L
dv/dt Max. rate of rise of off-state Voltage 500 V/µs
applied
RRM
applied
RRM
VR = rated V
RRM
/ V
DRM
di/dt Max. rate of rise of turned-on Current 150 A/µs
2
Triggering
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Parameters 25TTS..S Units Conditions
P
Max. peak Gate Power 8.0 W
GM
P
Max. average Gate Power 2.0
G(AV)
+ IGMMax. paek positive Gate Current 1.5 A
- VGMMax. paek negative Gate Voltage 10 V
I
Max. required DC Gate Current 60 mA Anode supply = 6V, resistive load, TJ = - 10°C
GT
to trigger 45 Anode supply = 6V, resistive load, TJ = 25°C
20 Anode supply = 6V, resistive load, TJ = 125°C
V
Max. required DC Gate Voltage 2.5 V Anode supply = 6V, resistive load, TJ = - 10°C
GT
to trigger 2.0 Anode supply = 6V, resistive load, TJ = 25°C
1.0 Anode supply = 6V, resistive load, TJ = 125°C
V
Max. DC Gate Voltage not to trigger 0.25 TJ = 125°C, V
GD
I
Max. DC Gate Current not to trigger 2.0 mA TJ = 125°C, V
GD
= rated value
DRM
= rated value
DRM
25TTS.. S Series
Switching
Parameters 25TTS..S Units Conditions
t
Typical turn-on time 0.9 µs TJ = 25°C
gt
t
Typical reverse recovery time 4 TJ = 125°C
rr
t
Typical turn-off time 110
q
Thermal-Mechanical Specifications
Parameters 25TTS..S Units Conditions
T
Max. Junction Temperature Range - 40 to 125 °C
J
T
Max. Storage Temperature Range - 40 to 125 °C
stg
Soldering Temperature 2 40 °C for 10 seconds (1.6mm from case)
R
Max. Thermal Resistance Junction 1.1 °C/W DC operation
thJC
to Case
R
Typ. Thermal Resistance Junction 40 °C/W
thJA
to Ambient (PCB Mount)**
wt Approximate Weight 2 (0.07) g (oz.)
T Case Style D2 Pak (SMD-220)
**When mounted on 1" square (650mm2) PCB of FR-4 or G-10 material 4 oz (140µm) copper 40°C/W
For recommended footprint and soldering techniques refer to application note #AN-994
3
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