International Rectifier 16TTS08, 16TTS12 Datasheet
PHASE CONTROL SCR
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Bulletin I2115
16TTS.. SERIES
Description/Features
The 16TTS.. new series of silicon controlled rectifiers are specifically designed for medium power
switching and phase control applications. The
glass passivation technology used has reliable
operation up to 125° C junction temperature.
Typical applications are in input rectification (soft
start) and these products are designed to be used
with International Rectifier input diodes, switches
and output rectifiers which are available in identical package outlines.
V
T
I
TSM
VR/ VD= 1200V
<1.4V @ 10A
= 200A
Output Current in Typical Applications
Applications Single-phase Bridge Three-phase Bridge Units
Capacitive input filter
common heatsink of 1°C/W
Major Ratings and Characteristics
Characteristics 16TTS..S Units
I
T(AV)
I
RMS
V
I
TSM
V
dv/dt 500 V/µs
di/dt 150 A/µs
T
Sinusoidal 10 A
waveform
V
/
RRM
DRM
@ 10 A, TJ = 25°C 1.4 V
T
J
= 55°C,
T
A
= 125°C, 13.5 17 A
T
J
16 A
800 and 1200 V
200 A
TO-220AC
- 40 to 125 °C
Also available in SMD-220 package (series 16TTS..S)
1
16TTS.. Series
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V oltage Ratings
Part Number
16TTS08 800 800 5
16TTS12 1200 1200
Absolute Maximum Ratings
V
, maximum V
RRM
, maximum I
DRM
RRM/IDRM
peak reverse voltage peak direct voltage 125°C
VVmA
Parameters 16TTS.. Units Conditions
I
Max. Average On-state Current 10 A 50% duty cycle @ TC = 98° C, sinusoidal wave form
T(AV)
I
Max. RMS On-state Current 16
RMS
I
Max. Peak One Cycle Non-Repetitive 170 10ms Sine pulse, rated V
TSM
Surge Current 200 10ms Sine pulse, no voltage reapplied
I2t Max. I2t for fusing 144 A2s 10ms Sine pulse, rated V
200 10ms Sine pulse, no voltage reapplied
I2√t Max. I2√t for fusing 2000 A2√s t = 0.1 to 10ms, no voltage reapplied
V
Max. On-state Voltage Drop 1.4 V @ 10A, TJ = 25°C
TM
r
V
On-state slope resistance 24.0 mΩ TJ = 125°C
t
Threshold Voltage 1.1 V
T(TO)
IRM/IDMMax.Reverse and Direct 0.5 mA TJ = 25 °C
Leakage Current 5.0 TJ = 125 °C
I
Max. Holding Current 100 mA Anode Supply = 6V, Resistive load, Initial IT=1A
H
I
Max. Latching Current 200 mA Anode Supply = 6V, Resistive load
L
dv/dt Max. rate of rise of off-state Voltage 500 V/µs
applied
RRM
applied
RRM
VR = rated V
RRM
/ V
DRM
di/dt Max. rate of rise of turned-on Current 150 A/µs
2
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