01/99 B-31
IF1330
N-Channel Silicon Junction Field-Effect Transistor
¥ Low-Noise, High Gain Amplifier
At 25°C free air temperature: IF1330 Process NJ132H
Static Electrical Characteristics Min Max Unit Test Conditions
Gate Source Breakdown Voltage V
Gate Reverse Current I
Gate Source Cutoff Voltage V
Drain Saturation Current (Pulsed) I
Dynamic Electrical Characteristics
Common Source
Forward Transconductance
Common Source Input Capacitance C
Common Source
Reverse Transfer Capacitance
(BR)GSS
GSS
GS(OFF)
DSS
g
fs
iss
C
rss
Absolute maximum ratings at TA= 25¡C
Reverse Gate Source & Reverse Gate Drain Voltage – 20 V
Continuous Forward Gate Current 10 mA
Continuous Device Power Dissipation 225 mW
Power Derating 1.8 mW/°C
Storage Temperature Range – 65°C to 200°C
– 20 V IG= – 1 µA, VDS= ØV
– 0.1 nA VDS= ØV, VGS= – 10V
– 0.35 – 1.5 V VDS= 10V, ID= 0.5 nA
520mAVDS= 10V, VGS= ØV
10 mS VDS= 10V, ID= 5 mA f = 1 kHz
20 pF VDS= 10V, ID= 5 mA f = 1 MHz
5pFVDS= 10V, ID= 5 mA f = 1 MHz
Equivalent Short Circuit
Input Noise Voltage
TOÐ236AB Package
Dimensions in Inches (mm)
¯e
N
Pin Configuration
1 Drain, 2 Source, 3 Gate
Typ
2.5 nV/√Hz VDS= 10V, ID= 5 mA f = 1 kHz
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1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287 FAX (972) 276-3375
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