Intel SSDSC2BB080G401, SSDSC1NB080G401, SSDSC2BB300G401, SSDSC2BB240G401, SSDSC2BB160G401 User Manual

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Intel

Solid-State Drive DC S3500 Series

Product Specification

 Capacity:

− 2.5-inch: 80/120/160/240/300/480/600/800 GB

− 1.8-inch: 80/240/400/800 GB

 Components:

− Intel

20nm NAND Flash Memory

− Multi-Level Cell (MLC)

 Form Factor: 2.5–inch and 1.8-inch  Read and Write IOPS

1,2

(Full LBA Range,

Iometer* Queue Depth 32)

− Random 4 KB3 Reads: Up to 75,000 IOPS

− Random 4 KB Writes: U p to 11,500 IOPS

− Random 8 KB

− Random 8 KB Writes: U p to 5,500 IOPS

 Bandwidth Performance

− Sustained Sequential Read: Up to 500 MB/s4

− Sustained Sequential Write: Up to 450 MB/s

 Latency (average sequential)

− Read: 50 µs (TYP)

− Write: 65 µs (TYP)

 Quality of Service

− Read/Write: 500 µs / 5 ms (99.9%)

 AES 256-bit Encryption  Compliance

− SATA Revisi o n 3.0; comp a tib le with SATA 6Gb/s, 3Gb/s and 1.5Gb/s interface rates

− ATA8-ACS2; includes SCT (Smart Command Transport) and device statistics log s upport

− Enhanced SMART ATA feature set

− Native Comma nd Queuing (NCQ ) comm and set

− Data set management Trim command

 Compatibility

− Windows 7 and Windows 8

− Windo ws Server 2012

− Windo ws Server 2008 Enterprise 32/64bit SP2

− Windows Server 2008 R2 SP1

− Windo ws Server 2003 Enterprise R2 64bit SP2

− Red Hat Enterpr ise Linux* 5.5, 5.6, 6.1, 6.3

− SUSE* Linux Enter pr is e Serv er 10, 11 SP1

− CentOS 64bit 5.7, 6.3

− Intel

 Product Ecological Compliance

SSD Toolbox with Intel® SSD Optimizer

− RoHS*

1. Performance values vary by capacity and form factor

2. Performance specifications apply to both compressible and incompressible data

3. 4 KB = 4,096 bytes ; 8 KB = 8,192 bytes

MB/s = 1,000,000 bytes/second.

Based on Random 4KB QD=1 workload, measured as the time taken for 99.9 percentile of commands to finish the round-trip from host to drive and back to host

Measurement taken once the workload has reached steady state but including all background activities required for normal operation and data reliability

Defaults to 12V, if both 12V and 5V are present

Based on 5V su pply

9. Please contact your Inte l representativ e f or details on the n on-operati n g t emperature range

10.

Based on JESD218 standard

December 2013 Order Number: 328860-003US

Reads: Up to 47,500 IOPS

5, 6

 Power Management

− 2.5 inch: 5 V or 12 V SATA Supply Rail7

− 1.8 inch: 3.3 V SATA Supply Rail

− SATA Interfac e Power Management

− OS-aware hot plug/removal

− Enhanced power-loss data protection

 Power

− Active: Up to 5.0 W (TYP)

− Idle: 650 mW

 Weight:

− 2.5-inch 80-240 GB: 70 grams ± 2 grams

− 2.5-inch 300-800 GB: 72 grams ± 2 grams

− 1.8-inch 80 GB: 35 grams ± 2 grams

− 1.8-inch 240-800 GB: 37 grams ± 2 grams

 Temperature

− Operating: 0° C to 70° C

− Non-Operating

: -55° C to 95° C

− Temperatur e mo nitor ing and logging

− Thermal throttling

 Shock (operating and non-operating):

1,000 G/0.5 msec

 Vibration

− Operating: 2.17 G

− Non-Operating

 Altitude (simulated)

RMS

: 3.13 G

(5-700 Hz)

(5-800 Hz)

RMS

− Operating: -1,000 to 10,000ft

− Non-Operating

 Reliability

− Uncorre c table Bi t Error Rate (UBER ):

− 1 sector per 10

: -1,000 to 40, 000ft

bits read

− Mean Time Betwee n Failures (MTBF): 2,000,000 hours

− End-to-End data protection

 Endurance Rating

− 80 GB: 45 TBW – 120 GB: 70 TBW

− 160 GB: 100 TBW – 240 GB: 140 TBW

− 300 GB: 170 TBW – 400 GB: 225 TBW

− 480 GB: 275 TBW – 600 GB: 330 TBW

− 800 GB: 450 TBW

 Certifications and Declarations

− UL*, CE*, C-Tick*, BSMI*, KCC*, Microsoft* WHCK,

VCCI*, SATA-IO

Ordering Information

Contact your local Intel sales representative for ordering information.

Intel® Solid-State Drive DC S3500

INFORMATION IN THIS DOCUMENT IS PROVIDED IN CONNECTION WITH INTEL PRODUCTS. NO LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IS GRANTED BY THIS DOCUMENT. EXCEPT AS PROVIDED IN INTEL'S TERMS AND CONDITIONS OF SALE FOR SUCH PRODUCTS, INTEL ASSUMES NO LIABIL IT Y WH AT SOE VER AND INTEL DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY, RELAT ING T O SALE AND/OR USE OF INTEL PRODUCTS INCLUDING LIABILITY OR WARRANTIES RELATING TO FITNESS FOR A PARTICULAR PURPOSE, MERCHANTABILITY, OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT.

A "Mission Critical Application" is any application in which failure of the Intel Product could result, directly or indirectly, in personal injury or death. SHOULD YOU PURCHASE OR USE INTEL'S PRODUCTS FOR ANY SUCH MISSION CRITICAL APPLICATION, YOU SHALL INDEMNIFY AND H OLD INTEL AND ITS SUBSIDIARIES, SUBCONTRACTORS AND AF F I L IATES, AND THE DIRECTORS, OFFICERS, AND EMPLOYEES OF EACH, HARMLESS AG AI NST AL L C L AIMS COSTS, DAMAGES, AND EXPENSES AND REASONABLE ATTORNEYS' FEES ARISING OUT OF, DIRECTLY OR INDIRECTLY, ANY CLAIM OF PRODUCT LIABILITY, PERSONAL INJURY, OR DEATH ARISING IN ANY WAY OUT OF SUCH MISSION CRITICAL APPL I CAT I ON, WHE T HE R OR NOT INT E L OR ITS SUBCONTRACTOR WAS NEGLIGENT IN THE DESIGN, MANUFACTURE, OR WARNING OF THE INTEL PRODUCT OR ANY OF ITS PARTS.

Intel may make changes to specifications and product descriptions at any time, without notice. Designers must not rely on the absence or characteristics of any features or inst ructions marked "reserved" or " undefined." Intel reserve s these for future definition and shall have no responsibilit y whatsoever for conflicts or incompat ibili ties ar ising fr om futur e c hanges to t hem. T he infor matio n here is subj ect to cha nge w ithout not ice. Do no t fina lize a d es ign w ith this information.

The products described in this document may contain design defects or errors known as errata which may cause the product to deviate from published specifications. Current characterized errata are available on request.

Contact your local I nt el s ales office or your distributor to obtain the latest specifications and before placing your product order. Copies of documents which have an order number and are referenced in this document, or o ther I ntel literature, may b e o btained by ca lling 1-800-548-4725,

or go to: http://www.intel.com/design/literature.htm Low Halogen applies only to brominated and chlorinated flame retardants (BFRs/CFRs) and PVC in the final product. Intel components as well as purchased

components on the finished assembly meet JS-709 requirements, and the PCB/substrate meet IEC 61249-2-21 requirements. The replacement of halogenated flame re tardants and/or PVC may not be better for the environment.

Intel and the Intel log o are trademarks of Intel Corporation in the U.S. and other countries. *Other names and brand s may be claimed as the property of ot h ers. Copyright © 2013 Intel Corporation. All righ ts reserved.

Product Specification December 2013 2 328860-003US

Intel® Solid-State Drive DC S3500

Contents

Revision History ..............................................................................................................................4

Terms and Acronyms .......................................................................................................................4

1.0 Overview .............................................................................................................................6

2.0 Product Specifications ..........................................................................................................7

2.1 Capacity ............................................................................................................................... 7

2.2 Performance ........................................................................................................................ 7

2.3 Electrical Characteristics ..................................................................................................... 9

2.4 Environmental Conditions ................................................................................................. 12

2.5 Product Regulatory Compliance ........................................................................................ 12

2.6 Reliability ........................................................................................................................... 13

2.7 Temperature Sensor .......................................................................................................... 14

2.8 Power Loss Capacitor Test ................................................................................................ 14

2.9 Hot Plug Support ............................................................................................................... 14

3.0 Mechanical Information ..................................................................................................... 15

4.0 Pin and Signal Descriptions ................................................................................................. 17

4.1 2.5-inch Form Factor Pin Locations ................................................................................... 17

4.2 1.8-inch Form Factor Pin Locations ................................................................................... 17

4.3 Connector Pin Signal Definitions ....................................................................................... 18

4.4 Power Pin Signal Definitions ............................................................................................. 18

5.0 Supported Command Sets .................................................................................................. 20

5.1 ATA General Feature Command Set ................................................................................. 20

5.2 Power Management Command Set .................................................................................. 20

5.3 Security Mode Feature Set ................................................................................................ 20

5.4 SMART Command Set ....................................................................................................... 21

5.5 Device Statistics ................................................................................................................. 26

5.6 SMART Command Transport (SCT).................................................................................... 27

5.7 Data Set Management Command Set ............................................................................... 27

5.8 Host Protected Area Command Set .................................................................................. 27

5.9 48-Bit Address Command Set............................................................................................ 28

5.10 General Purpose Log Command Set.................................................................................. 28

5.11 Native Command Queuing ................................................................................................ 28

5.12 Software Settings Preservation ......................................................................................... 28

6.0 Certifications and Declarations ........................................................................................... 29

7.0 References ......................................................................................................................... 29

Appendix A: IDENTIFY DEVICE Command Data ............................................................................... 30

December 2013 Product Specification 328860-002US 3

Revision History

Date

Revision

Description

April 2013

001

Initial release.

3. Added X,Y, Z dimension in section 3.0

3. Updated Table 23

ATA

Advanced Technology Attachment

CRC

Cyclic Redundancy Check

DAS

Device Activity Signal

DMA

Direct Memory Access

ECC

Error Correction Code

EXT

Extended

FPDMA

First Party Direct Memory Access

portion of the capacity is used for NAND flash management and maintenance purposes.

Gigabit

HDD

Hard Disk Drive

HET

High Endurance Technology

Kilobyte

I/O

Input/Output

IOPS

Input/Output Operations Per Second

ISO

International Standards Organization

LBA

Logical Block Address

Megabyte (1,000,000 bytes)

MLC

Multi-level Cell

MTBF

Mean Time Between Failures

NCQ

Native Command Queuing

NOP

No Operation

Petabyte

PCB

Printed Circuit Board

PIO

Programmed Input/Output

RDT

Reliability Demonstration Test

RMS

Root Mean Square

SATA

Serial Advanced Technology Attachment

SCT

SMART Command Transport

1. Random write IOPS consistency changes from 75% to 80%

June 2013 002

December 2013 003

2. Added read power in table 8, 9 and 11

1. Updated Section 5.4.1 Timed Workload Endurance Indicators with user notes

2. Updated Table 6 notes

Terms and Acronyms

Intel® Solid-State Drive DC S3500

Term Definition

Gigabyte Note: The total usable capacity of the SSD may be less than the total physical capacity because a small

Product Specification December 2013 4 328860-003US

health of a drive and reports potential problems.

SSD

Solid-State Drive

Terabyte

TYP

Typical

Intel® Solid-State Drive DC S3500

Term Definition

SMART

UBER Uncorrectable Bit Error Rate

Self-Monitoring, Analysis and Reporting Technology An open standard for developing hard drives and software systems that automatically monitors the

December 2013 Product Specification 328860-002US 5

1.0 Overview

This document describes the spec ificati ons a nd cap abiliti es of th e Intel® SSD DC S3500. The Intel

with world-class r eliability for Seria l Advanced Technology Attachment (SATA)-based computers in nine capacities: 80 GB, 120 GB, 160 GB, 240 GB, 300 GB, 400 GB, 480 GB, 600 GB and 800 GB.

By combining 20nm Intel support, the Intel sequential write speeds of up to 450 MB/s. Intel SSD DC S3500 delivers Quality of Service of 500 us for ran dom 4KB r ea ds m ea s ured at a queue depth of 1.

The industry-standard 2.5-inch and 1.8-inch form fac tors enable interchangeabil ity w ith existing hard disk drives (H D Ds) and native SATA HDD drop-in replacement with the enhanced performanc e, reliability, ruggedness, and power savings offered by an S S D .

Intel SSD DC S3500 offers these key features:

SSD DC S3500 delivers leading performan ce and Quality of Serv ice combin ed

• Standard Endurance T ec hnology

• High I/O and throughput performance

• Consistent I/O latency

• Enhanced power-loss data protection

• End-to-End data protection

• Thermal throttling

• Temperature Sensor

• Inrush current management

• Low power

• High reliability

• Enhanced ruggedness

• Temperature monitor and logging

• Power loss protection capacitor self-test

Intel® Solid-State Drive DC S3500

SSD DC S3500 delivers sequential read spee ds of up to 500 MB/s and

NAND Flash Memory technology with SATA 6Gb/s interface

Product Specification December 2013 6 328860-003US

Table 1. User Addressable Secto rs

Unformatted Capacity

(Total User Addressable Sectors in LBA Mode)

80 GB

156,301,488

120 GB

234,441,648

160 GB

312,581,808

240 GB

468,862,128

300 GB

586,072,368

400 GB

781,422,768

480 GB

937,703,088

600 GB

1,172,123,568

800 GB

1,562,824,368

Table 2.

Random Read/W rite Input/Output Operat ions Per Second (IO P S )

Intel SSD DC S3500

80 GB

1.8”)

240 GB

1.8”)

800 GB

1.8”)

Random 4 KB Read (up to)2

IOPS

70,000

75,000

Random 4 KB Write (up to)

IOPS

7,000

4,600

7,500

9,000

11,000

11,500

Random 8 KB Read (up to)3

IOPS

39,000

47,000

47,500

Random 8 KB Write (up to)

IOPS

3,700

2,300

3,800

4,400

5,500

Intel® Solid-State Drive DC S3500

2.0 Product Specifications

2.1 Capacity

Intel SSD DC S3500

Notes: 1 GB = 1,000,000,000 bytes; 1 sector = 512 bytes. LBA count shown represents total user storage capacity and will remain the same throughout the life of the drive. The total usable capacity of the SSD may be less than the total physical capacity because a small portion of the capacity is

used for NAND flash management and maintenance purposes.

2.2 Performance

Specification1 Unit

Notes: 1. Performance measured using Iomet er * wi t h Queue Dep t h 3 2 . Mea surements are performed on a full Logical Block

Address (LBA) span of the drive.

2. 4 KB = 4,096 bytes

3. 8 KB = 8,192 bytes

4. Performance co nsistency m easured usi ng Iometer* based on Random 4KB QD=32 workload, measured as the (IOPS in the 99.9th percentile sl ow est 1-second interval)/(averag e IOP S d u ring t h e te s t) . M easur ements are performed on a full Logical Block Address (LBA) span of the drive once the workload has reached steady state but inc lu ding all background activities required for normal operation and data reliability

(2.5/

120 GB 160 GB

(2.5”/

300 GB

400 GB

(1.8”)

480

/600 GB

(2.5”/

December 2013 Product Specification 328860-002US 7

Intel® Solid-State Drive DC S3500

Table 3. Random Read/W rite IOPS Consistency

Intel SSD DC S3500

80GB

1.8”)

240GB

1.8”)

800GB

1.8”)

Random 4 KB Read (up to)2

Random 4 KB Write (up to)

Random 8 KB Read (up to)3

Random 8 KB Write (up to)

Notes: 1. Performance measured using Iometer* with Queue Depth 32 . Mea surements are performed on a full Logical Block

second interval)/( average IOPS during the tes t). Meas urements a re perform ed on a

Table 4. Sequential Rea d a nd Write Bandwidth

Intel SSD DC S3500

80GB

1.8”)

240GB

1.8”)

480

800GB

1.8”)

6Gb/s)1

Table 5. Latency

Intel SSD DC S3500

80GB (2.5/1.8”), 120GB, 160GB, 240GB (2.5”/1.8”),

300GB, 400GB (1.8”), 480GB, 600 GB

Specification4 Unit

Address (LBA) span of the drive.

2. 4 KB = 4,096 bytes

3. 8 KB = 8,192 bytes

4. Performance consistency measured using Iometer* based on Random 4KB QD=32 workload, measured as the (IOPS in the 99.9th p ercen til e sl owes t 1full Logical Block Address (LBA) span of the drive once the workload has reached steady state, including all background activities required for normal operation and data reliability

Specification Unit

Sequential Read (SATA

MB/s 340 445 475 500 500 500 500 500

(2.5/

120GB 160GB

(2.5”/

300GB

400GB

(1.8”)

400GB

(1.8”)

480 /

600 GB

/600

(2.5”/

Seque ntial Wr ite (SATA

Notes: 1. Performance measured using Iometer* with 128 KB (131,072 bytes) of transfer size with Queue Depth 32.

Specification

Latency1 (TYP)

Read Write Power On to Ready

MB/s 100 135 175 260 315 380 410 450

800GB (2.5”/1.8”)

50 µs 65 µs

2.0 s

Product Specification December 2013 8 328860-003US

50 µs 65 µs

3.0 s

Table 6. Quality of Service

Intel SSD DC S3500

Queue Depth=1

Queue Depth=32

80/120/160/

240 GB

300/400/480/

600/800 GB

80/120/160/

240 GB

300/400/480/

600/800 GB

Quality of Service

(99.9%)

Reads

0.5

0.5 2 2

Writes

ms 5 2

Quality of Service

(99.9999%)

Reads

10 5 10

Writes

Table 7. Operating Voltage for 2.5-inch Form Fac t or

Intel SSDDC S3500

80 GB, 120 GB, 160 GB, 240 GB, 300 G B, 480 GB, 600 GB, 800 GB

Inrush Current (Typical Peak) 1

1.0 A, < 1 s

Inrush Current (Typical Peak) 1

500 ms

1.0 A, < 1 s

Intel® Solid-State Drive DC S3500

Specification Unit

3, 4

3,4

Notes:

1. Device measured using Iometer. Latenc y measured using 4 KB (4,096 bytes) trans fer size with Queue Depth equal to 1 on a sequential workload.

2. Power On To Ready time assumes proper shut down. Time varies if shutdown is not preceded by STANDBY IMMEDI ATE command. For 95% of the time, the maximum time fo r pow er on t o ready will be less than 10 seconds.

3. Device measured using Iometer. Quali ty of S ervice measured using 4 KB (4,096 bytes) transfer size on a random workload on a full Logical Block Address (LBA ) span of the drive once the workload has reached steady state but including all background activities required for normal operation and data reliability.

4. Based on Random 4KB QD=1, 32 workloads, measured as the time taken for 99.9(or 99.9999) percentile of commands to finish the round-trip from host to drive and back to host.

2.3 Electrical Characteristics

Electrical Characteristics

5 V Operating Characteristics:

Operating Voltage range Rise time (Max/Min) Fall time (Min) Noise level

Min Off time

500 mV pp 10 Hz – 100 KHz

50 mV pp 100 KHz – 20 MHz

12 V Operating Characteristics:

Operating Voltage range Rise time (Max/Min) Fall time (Min) Noise level

Min Off time

Notes:

1000 mV pp 10 Hz – 100 KHz

100 mV pp 100 KHz – 20 MHz

1. Measured from initial device power supply application.

2 Fall time needs to be equal or better than minimum in order to guarantee full functionali ty of enhanced power loss management.

3. The drive needs to be powered off fo r at l east 5 00m sec before powering on.

December 2013 Product Specification 328860-002US 9

5 V (±5%)

1 s / 1 ms

1 ms

500 ms

12 V (±10%)

1 s / 1 ms

1 ms

Intel® Solid-State Drive DC S3500

Intel SSD DC S3500

80 GB

120 GB

160 GB

240 GB

300 GB

480 GB

600 GB

800 GB

Active Write - RMS Average 1

1.8

2.0

2.3

2.9

3.5

4.3

4.5

5.0

Active Write - RMS Burst 2

2.0

2.4

2.7

3.2

3.9

5.2

5.5

7.3

Active Read - RMS Average 3

1.5

1.6

Active Read - RMS Burst 4

1.8

2.2

2.5

2.8

3.0

3.3

3.4

3.5

Idle

Intel SSD DC S3500

80 GB

120 GB

160 GB

240 GB

300 GB

480 GB

600 GB

800 GB

Active Write - RMS Average1

Active Write - RMS Burst2

2.2

2.5

2.8

3.4

4.2

5.5

6.8

7.8

Active Read - RMS Average3

1.6

1.7

1.8

Active Read - RMS Burst4

2.1

2.3

2.6

3.2

3.6

6.4

Idle

0.8

0.9

Table 8. Power Consumption for 2.5-inch Form Factor (5V Supply )

Specification Unit

0.6 0.6 0.6 0.6 0.6 0.6 0.6 0.6

Notes:

1. The workload equates 128 KB (131,072 bytes) Queue Depth equal to 32 sequential writes. Root Mean Squared (RMS) average power is measured using scope t rigger over a 100 ms sample period.

2. The workload equates 128 KB (131,072 bytes) Queue Depth equal to 32 sequential writes. Root Mean Squared (RMS) burst power is measured using scope trigger over a 500 us sample period.

3. The workload equates 128 KB (131,072 bytes) Queue Depth equal to 32 sequential reads. Root Mean Squared (RMS) average power is measured using scope t rigger over a 100 ms sample period.

4. The workload equates 128 KB (131,072 bytes) Queue Depth equal to 32 sequential reads. Root Mean Squared (RMS) burst power is measured using scope tri gg er ov e r a 5 0 0 us sample period.

Table 9. Power Consumption for 2.5-inch Form Factor ( 12V Supply)

Specification1 Unit

2.0 2.3 2.5 3.1 3.5 4.3 4.5 5.0

Notes:

1. The workload equat es 12 8 KB (131,0 7 2 by t es) Q ueu e Depth equal to 32 sequential writes. Roo t Mean Squa red (RMS) average power is me asured using sc ope trigger over a 100 ms sample period.

2. The workload equates 128 KB (131,072 bytes) Queue Depth equal to 32 sequential writes. Root Mean Squared (RMS) burst power is measured using scope tri gg er ov e r a 500 us sample period.

3. The workload equates 128 KB (131,072 bytes) Queue Depth equal to 32 sequential reads. Root Mean Squared (RMS) average power is measured using scope t rigger over a 100 ms sample period.

4. The workload equates 128 KB (131,072 bytes) Queue Depth equal to 32 sequential reads. Root Mean Squared (RMS) burst power is measured using scope tri gg er ov e r a 5 0 0 us sample period.

Product Specification December 2013 10 328860-003US

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