− High Endurance Technology (HET) Multi-Level Cell
(MLC)
Form Factor: 2.5- and 1.8-inch
Read and Write IOPS
1,2
(Full LBA Range, Iometer*
Queue Depth 32)
3
− Random 4KB
−
Random 4KB Writes:
− Random 8KB
−
Random 8KB Writes:
Bandwidth Performance
− Sustained Sequential Read: Up to 500 MB/s
Reads: Up to 75,000 IOPS
Up to 36,000 IOPS
3
Reads: Up to 47,500 IOPS
Up to 20,000 IOPS
1
4
− Sustained Sequential Write: Up to 460 MB/s
Endurance: 10 drive writes per day
Latency (average sequential)
5
for 5 years
− Read: 50 µs (TYP)
− Write: 65 µs (TYP)
Quality of Service
6,8
− Read/Write: 500 µs (99.9% )
Performa nc e Consistency
7,8
Read/Write: Up to 90%/90% (99.9% )
AES 256-bit Encryption
Altitude (simulated)
– Operating: -1,000 to 10,000ft
– Non-operating: -1,000 to 40,000ft
Product Ecological Compliance
− RoHS*
Compliance
− SATA Revision 3.0; compatible with SATA 6Gb/s,
3Gb/s and 1.5Gb/s interface rates
− ATA9-ACS2; includes SCT (Smart Command
Transport) and device statistics log support
− Enhanced SMART ATA feature set
− Native Command Queuing (NCQ) command set
− Data set management Trim command
Power Management
− 2.5” 5V or 12V SATA Supply Rail
9
− 1.8” 3.3V SATA Supply Rail
− SATA Interface Power Management
− OS-aware hot plug/removal
− Enhanced power-loss data protection
Power
10
− Active: Up to 6 W (TYP)
− Idle: 650 mW
Weight:
− 2.5” 200, 400, 800GB: 73.6 gra ms ± 2 grams
− 2.5” 100GB: 70 grams ± 2 grams
− 1.8” 200, 400GB: 38 grams ± 2 grams
Temperature
− Operating: 0
− Non-Operating
o
C to 70o C
11
: -55o C to 95o C
− Temperature monitoring and logging
− Thermal throttling
Shock (operating and non-operating):
− 1,000 G/0.5 msec
Vibration
− Operating: 2.17 GRMS (5-700 Hz)
− Non-operating: 3.13 GRMS (5-800 Hz)
Reliability
− Uncorrectable Bit Error Rate (UBER):
1 sector per 10
17
bits read
− Mean Time Between Failures (MTBF):
2 million hours
− End-to-End data-path protection
Certifications and Declarations
− UL*, CE*, C-Tick*, BSMI*, KCC* , Micr o soft*
WHCK*, VCCI*, SATA-IO*
Compatibility
− Windows* 7 and Windows* 8
− Windows* Server 2012
− Windows* Server 2008 Ente rprise 32/64bit SP2
− Windows* Server 2008 R2 SP1
− Windows* Server 2003 Ente rprise R2 64bit SP2
− Red Hat* Enterprise Linux* 5.5, 5.6, 6.1, 6.3
− SUSE* Linux Enterprise Server 10, 11 SP1
− CentOS* 64bit 5.7, 6.3
1. Performance values vary by capacity and form factor
2. Performance specifications apply to both compressible and incompressible data
3. 4KB = 4,09 6 bytes; 8 KB = 8,192 bytes.
4.
MB/s = 1,000,000 bytes/second
5. Based on JESD218 standard. For 200GB 1.8 inches drive, it is 9.8 drives write per day.
6. Based on Ra ndom 4KB QD= 1 workload , measured as the time taken for 99 .9
7. Based on Ra ndom 4KB QD= 32 workload, measured as the (IOPS in the 99.9
8. Measurement taken once the workload has reached steady state but including all background activities required for normal operation and data reliability
9. Defaults to 12V, if both 12V and 5V are present
10. Based on 5V supply; refer to Table 7 for more details
11. Please contact your Intel representative for details on the non-operating temperature range
Order Number: 328171-007US
percentile of commands to finish the round-trip from host to d rive and back to host
th
percentile slowest 1-second interval)/(average IOPS during the test)
Ordering Information
Contact your local Intel sales represe ntative for ordering information.
INFORMATION IN THIS DOCUMENT IS PROVIDED IN CONNECTION WITH INTEL PRODUCTS. NO LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR
OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IS GRANTED BY THIS DOCUMENT. EXCEPT AS PROVIDED IN INTEL'S TERMS AND CONDITIONS
OF SALE FOR SUCH PRODUCTS, INTEL ASSUMES NO LIABILITY WHATSOEVER AND INTEL DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY, RELATING
TO SALE AND/OR USE OF INTEL PRODUCTS INCLUDING LIABILIT Y OR WAR R ANTI E S R ELAT ING T O F IT NE SS FOR A PARTICULAR PURPOSE,
MERCHANTABILITY, OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT.
A "Mission Critical Application" is any application in which failure of the Intel Product could result, directly or indirectly, in personal injury or death. SHOULD
YOU PURCHASE OR USE INTEL'S PRODUCTS FOR ANY SUCH MISSION CRITICAL APPLICATION, YOU SHALL INDEMNIF Y AND HOL D INTE L AND ITS
SUBSIDIARIES, SUBCONTRACTORS AND AF F I L IATES, AND THE DIRECTORS, OFFICERS, AND EMPLOYEES OF EACH, HARMLE SS AG AINST AL L CL AI MS
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LIABILITY, PERSONAL INJURY, OR DEATH AR I SING IN ANY WAY OU T OF SU CH MISSION CRITI CAL APP LI C AT ION, WHETHER OR NOT INTEL OR ITS
SUBCONTRACTOR WAS NEGLIGENT IN THE DESI G N, MANUFACTURE, OR WARNING OF THE INTEL PRODUCT OR ANY OF ITS PARTS.
Intel may make changes to specifications and p r o d uc t d es criptions at any time, without no tice. Designers mus t not rely on the absence or characteristics
of any features or instructions marked "reserved" or "undefined." Intel reserves these for future definition and shall have no responsibility whatsoever for
conflicts or incompatibilities arising from future changes to them. The information here is subject to change without notice. Do not f inaliz e a des ign with
this information.
The products described in this document may contain design defects or errors known as errata which may cause the product to deviate from published
specifications. Current characterized errata are available on request.
Contact your local I nt el s ales office or your distri but or to obtain the latest specifications and before placing your product order.
Copies of document s which have an order number and are ref erenced in this document, or other Intel literature, may be obtained b y calling
1-800-548-4725, or go to: http://www.intel.com/design/literature.htm
Low Halogen applies only to brominated and chlorinated flame retardants (BFRs/CFRs) and PVC in the final product. Intel components as well as purchased
components on the finished assembly meet JS-709 requirements, and the PCB/substrate meet IEC 61249-2-21 requirements. The replacement of
halogenated flame re tardants and/or PVC may not be bett e r for the environment.
Table 14: Changed Endurance Rating Value
Table 18: Changed SMART Attribute E9h, PW and Threshold values to 1.
Section 5.4.1.1: Added User Notes and changed step 6 in Use Case 2.
Product Specification March 2014
4 328171-007
Table 1. Glossary of Terms a nd Acronyms
ATA
Advanced Technology Attachment
CRC
Cyclic Redundancy Check
DAS
Device Activity Signal
DMA
Direct Memory Access
ECC
Error Correction Code
EXT
Extended
FPDMA
First Party Direct Memory Access
portion of the capacity is used for NAND flash management and maintenance purposes.
Gb
Gigabit
HDD
Hard Disk Drive
HET
High Endurance Technology
KB
Kilobyte
I/O
Input/Output
IOPS
Input/Output Operations Per Second
ISO
International Standards Organization
LBA
Logical Block Address
MB
Megabyte (1,000,000 bytes)
MLC
Multi-level Cell
MTBF
Mean Time Between Failures
NCQ
Native Command Queuing
NOP
No Operation
PB
Petabyte
PCB
Printed Circuit Board
PIO
Programmed Input/Output
RDT
Reliability Demonstration Test
RMS
Root Mean Square
SATA
Serial Advanced Technology Attachment
SCT
SMART Command Transport
health of a drive and reports potential problems.
SSD
Solid-State Drive
TB
Terabyte
TYP
Typical
Intel® Solid-State Drive DC S3700 Se r ie s
Terms and Acronyms
Table 1 defines the terms and acronyms used in this document.
Term Definition
GB
SMART
Gigabyte
Note: The total usable capacity of the SSD may be less than the total physical capacity because a small
Self-Monitoring, Analysis and Reporting Technology
An open standard for developing hard drives and software systems that automatically monitors the
UBER Uncorrectable Bit Error Rate
March 2014 Product Specification
328171-007 5
1.0 Overview
This document describes the specifications and capabilities of the Intel® SSD DC S3700
Series.
The Intel SSD DC S3700 Series delivers lea ding performance an d Qu a lity of Service
combined with world-class reliability and endurance for Serial Advanced T ec hnology
Attachment (SATA)-based computers in four capacities: 100 GB , 200 GB, 400 GB an d
800 GB.
By combining 25nm Intel
support, the Intel SSD DC S3700 Series delivers sequential read speeds of u p to 500
MB/s and sequential write speeds of up to 460 MB/s. Intel S S D DC S3700 Series
delivers Quality of Service of 500 us for random 4KB reads a nd writes measured at a
queue depth of 1.
The Intel SS D DC S3700 Series also includes High Endurance Technology (HET), which
combines NAND silicon enhancements and SSD NAND management techniques to
extend the write enduran ce of an SSD, leading to lifetime en durance lev els of 10 drive
writes per day for 5 years.
Intel® Solid-State Drive DC S3700 Se r ie s
®
NAND Flash Mem ory tech nology with S ATA 6Gb/ s inter face
The industry-standard 2.5-inch form factor e nables interchan ge a bility with existing
hard disk drives (HDDs) and native SATA HDD drop-in replacement with the enhanced
performance, reliability, ruggedness, and power sa vings offered by an SSD.
Intel SSD DC S3700 Series offers these key features:
• High Endurance Technology (HET)
• High I/O and throughput performance
• Consistent I/O latency
• Enhanced power-loss data protection
• End-to-End data-path protection
• Thermal thr ottling
• Temperature Sensor
• Inrush current management
• Low power
• High reliability
• Enhanced ruggedn es s
• Temperature monitor a nd logging
• Power loss prot e c tion capacitor self-test
Product Specification March 2014
6 328171-007
Table 2. User Addressa ble Sectors
Unformatted Capacity
(Total User Addressable Sectors in LBA Mode)
100GB
195,371,568
200GB
390,721,968
400GB
781,422,768
800GB
1,562,824,368
Table 3. Random Read/W rite Input/Output Operat ions Per Second (IOPS)
Intel SSD DC S370 0 Series
100 GB
200 GB
(2.5”/1.8”)
400 GB
(2.5”/1.8”)
Random 4KB Read (up to)2
IOPS
75,000
75,000 / 75,000
75,000 / 75,000
75,000
Random 4KB Write (up to)
IOPS
19,000
32,000 / 29,000
36,000 / 36,000
36,000
Random 8KB Read (up to)3
IOPS
47,500
47,500 / 47,500
47,500 / 47,500
47,500
Random 8KB Write (up to)
IOPS
9,500
16,500 / 14,500
19,500 / 19,500
20,000
Table 4. Random Read/W rite IOPS Consistency
Intel SSD DC S3700 Series
100 GB
200 GB
(2.5”/1.8”)
400 GB
(2.5”/1.8”)
Random 4KB Read (up to)2
%
90
90
90
90
Random 4KB Write (up to)
%
85
90
90
90
Random 8KB Read (up to)3
%
90
90
90
90
Random 8KB Write (up to)
%
85
90
90
90
Notes: 1. Performance measured using Iomet er* wi t h Queue Dep t h 3 2 . Mea s u rements are performed on a full Logical Bloc k
Intel® Solid-State Drive DC S3700 Se r ie s
2.0 Product Specifications
2.1 Capacity
Intel® SSD DC S3700 Series
Notes: 1GB = 1,000,000,000 bytes; 1 sector = 512 bytes.
LBA count shown represents total user storage capacity and will remain the same throughout the life of the drive.
The total usable capacity of the SSD may be less than the total physical capacity because a small portion of the capacity
2.2 Performance
is used for NAND flash management and maintenance purposes.
Specification1 Unit
Specification4 Unit
Address (LBA) span of the drive.
2. 4KB = 4,096 bytes
3. 8KB = 8,192 bytes
4. Performance consis t ency mea sured using Iometer* based on Random 4K B QD= 3 2 workl o a d, measured as the
(IOPS in the 99.9th percentile slowest 1-second interval)/(average IOPS during the test). Meas ur ements are performed on a full Logical Block Address (LBA) span of the drive once the workload has reached steady state but including all background activities required for normal operation and data reliability
800 GB
800 GB
March 2014 Product Specification
328171-007 7
Intel® Solid-State Drive DC S3700 Se r ie s
Table 5. Sequential Rea d a nd Write Bandwidth
Intel® SSD DC S3700 Series
100GB
200GB
400GB
800GB
Sequential Read (SATA 6Gb/s)1
MB/s
500
500
500
500
Seque ntial Wr ite (SATA 6Gb/s)1
MB/s
200
365
460
460
Table 6. Latency
Intel SSD DC S370 0 Series
100, 200 and 400GB
800 GB
Table 7. Quality of Service
Intel SSD DC S3700 Series
Queue Depth=1
Queue Depth=32
100GB
200/400/800
GB
100GB
200/400/800
GB
Quality of Service
(99.9%)
Reads
ms
0.5
0.5 1 1
Writes
ms
0.5
0.5
15
10
Quality of Service
(99.9999%)
Reads
ms
10 5 10
5
Writes
ms
10 5 20
20
Specification Unit
Notes: 1. Performance measured using Iometer* with 128KB (131,072 bytes) of transfer size with Queue Depth 32.
Specification
Latency1 (TYP)
Read
Write
Power On to Ready
Specification Unit
3,4
3,4
Notes:
1. Device measured using Iometer. Latency measured using 4 KB (4,096 bytes) transfer size with Queue Depth equal to 1 on a
sequential workload.
2. Power On To Ready time assumes proper shutdown. Time vari es i f s hutd o wn is not preceded by STANDBY IMMEDIATE
command.
3. Device measured using Iom eter. Quality of Service measured using 4 KB (4,096 bytes) transfer size on a random workload on
a full Logical Block Address (LBA) span of the driveonce the workload has reached steady state but including all background
activities required for normal operation and data reliability.
4. Based on Random 4KB QD=1, 32 workloads, measured as the time taken for 99.9(or 99.9999) percentile of commands to finish
the round-trip from host to drive and back to host.
50 µs
2
65 µs
2.0 s
50 µs
65 µs
3.0 s
Product Specification March 2014
8 328171-007
Table 8. Operating Voltage for 2.5-inch Form Fac t or
Intel® SSDDC S3700 Series
100, 200, 400 and 800GB
Inrush Current (Typical Peak) 1
1.0 A, < 1 s
Inrush Current (Typical Peak) 1
1.0 A, < 1 s
Intel SSD DC S3700 Series
100GB
200GB
400GB
800GB
Active Write - RMS Average 1
W
2.8
4.2
5.2
5.8
Active Write - RMS Burst 2
W
3.1
4.6
7.7
8.2
Idle
W
0.6
Intel SSD DC S3700 Series
100GB
200GB
400GB
800GB
Active Write - RMS Average
W
2.9
4.4
5.4
6.0
Active Write - RMS Burst
W
8.2
Idle
W
0.8
0.8
0.8
0.8
Intel® Solid-State Drive DC S3700 Se r ie s
2.3 Electrical Characteristics
Electrical Characteristics
5 V Operating Characteristics:
Operating Voltage range
Rise time (Max/Min)
Fall time (Min)
Noise level
Min Off time
12 V Operating Characteristics:
Operating Voltage range
Rise time (Max/Min)
Fall time (Min)
Noise level
Min Off time
Notes:
1. Measured from initial device power supply application
2. Fall time needs to be equal or better than minimum in order to guarantee full functionality of enhanced power loss management
3. The drive needs to be powered off for at least 500msec before powering on
2
500 mV pp 10 Hz – 100 KHz
3
2
3
50 mV pp 100 KHz – 20 MHz
1000 mV pp 10 Hz – 100 KHz
100 mV pp 100 KHz – 20 MHz
5 V (±5%)
1 s / 1 ms
1 ms
500 ms
12 V (±10%)
1 s / 1 ms
1 ms
500 ms
Table 9. Power Consumption for 2.5-inch Form Factor (5V Suppl y )
Specification Unit
0.6 0.6 0.6
Table 10. Power Consumption for 2.5-inch Form Factor (12V Supply)
Specification1 Unit
3.3 4.8 7.6
Notes:
1. The workload equates 128 KB (131,072 bytes) Queue Depth equal to 32 sequential writes. Root Mean Squared (RMS) average
power is measured using scope trig ger over a 100 ms sample period
2. The workload equates 128 KB (131,0 7 2 by t es) Qu eue D ep t h eq u al to 32 seq u ential writes. Root Mean Squared (RMS) burst
power is measured using scope trig g er ov er a 500 us sample period
March 2014 Product Specification
328171-007 9
Table 11. Operating Voltage and Power Consum ption for 1.8-inch Form Factor
Intel® SSD DC S3700 Series
200 and 400GB
Min Off time3
500 ms
Inrush Current (Typical Peak) 1
1.2 A, < 1 s
Intel SSD DC S3700 Series
200GB
400GB
Active Write - RMS Average @ 3.3V
W
4.3
5.3
Active Write - RMS Burst @ 3.3V
W
4.7
7.9
Idle @ 3.3V W 0.6
0.6
Electrical Characteristics
Intel® Solid-State Drive DC S3700 Se r ie s
Operating Voltage for 3.3 V (±5%)
Min
Max
Rise time (Max/Min)
Fall time (Min)
Noise level
Notes:
1. Measured from initial device power supply application
2. Fall time needs to be equal or better than minimum in order to guarantee full functionality of enhanced power loss management
3. The drive needs to be powered off for at least 500msec before powering on
2
300 mV pp 10 Hz – 100 KHz
500 mV pp 100 KHz – 20 MHz
3.13 V
3.47 V
1 s / 1 ms
1 ms
Table 12. Power Consumption for 1.8-inch Form Factor
Specification1 Unit
Notes:
1. The wo rkload equates 128 KB (131,0 72 bytes) Queue Dep th equal to 32 sequential wri tes. Root Mean Squared (RM S) power is
measured using scope trigg er ov er a 100 ms sample period.
Product Specification March 2014
10 328171-007
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