− High Endurance Technology (HET) Multi-Level Cell
(MLC)
Form Factor: 2.5- and 1.8-inch
Read and Write IOPS
1,2
(Full LBA Range, Iometer*
Queue Depth 32)
− Random 4 KB3 Reads: Up to 75,000 IOPS
−
Random 4 KB Writes:
− Random 8 KB
−
Random 8 KB Writes:
Bandwidth Performance
3
Up to 36,000 IOPS
Reads: Up to 47,500 IOPS
Up to 20,000 IOPS
1
− Sustained Sequential Read: Up to 500 MB/s
− Sustained Sequential Write: Up to 460 MB/s
Endurance: 10 drive writes per day
Latency (average sequential)
5
for 5 years
− Read: 50 µs (TYP)
− Write: 65 µs (TYP)
Quality of Service
6,8
− Read/Write: 500 µs (99.9%)
Performa nc e C onsistency
7,8
Read/Write: Up to 90%/90% (99.9 % )
AES 256-bit Encryption
Compliance
− SATA Revision 3.0; compatible with SATA 6Gb/s,
3Gb/s and 1.5Gb/s interface rates
− ATA8-ACS2; includes SCT (Smart Command
Transport) and device statistics log support
− SSD-enhanced SMART ATA feature set
− Native Command Queuing (NCQ) command set
− Data set management Trim command
Compatibility
− Windows Server 2008 Enterprise 32/64 bit
− Windows Server 2008 R2
− Red Hat Enterprise Linux* 5.5, 5.6, 6.1
− SUSE* Linux Enterprise Server 11 SP1
Power Management
− 2.5 inch: 5 V or 12 V SATA Supply Rail
9
− 1.8 inch: 3.3 V SATA Supp l y Ra i l
− SATA Interface Power Management
− OS-aware hot plug/removal
− Enhanced power-loss data protection
Power
10
− Active: Up to 6 W (TYP)
− Idle: 650 mW
Weight:
− 2.5” 200,400,800 GB: 73.6 grams ± 2 grams
− 2.5” 100 GB: 70 gra m s ± 2 grams
− 1.8” 200, 400 GB : 49 grams ± 2 grams
Temperature
4
− Operating: 0
− Non-Operating
o
C to 70o C
11
: -55o C to 95o C
− Temperature monitoring and logging
− Thermal throttling
Shock (operating and non-operating):
− 1,000 G/0.5 msec
Vibration
− Operating: 2.17 GRMS (5-700 Hz)
− Non-operating: 3.13 GRMS (5-800 Hz)
Reliability
− Uncorrectable Bit Error Rate (UBER):
17
1 sector per 10
bits read
− Mean Time Between Failures (MTBF):
2 million hours
− End-to-End data-path protection
Certifications and Declar a tio ns
− UL*, CE*, C-Tick*, BSMI*, KCC* , Micr o soft*
WHQL, VCCI* , SATA-IO*
Product Ecological Compliance
− RoHS*
1. Performance values vary by capacity and form factor
2. Performance specifications apply to both compressible and incompressible data
3. 4 KB = 4,096 bytes; 8 KB = 8,192 b ytes.
4.
MB/s = 1,000,000 bytes/second
5. Based on JESD218 standard
6. Based on Ra ndom 4KB QD =1 workloa d, measured as the time taken for 99.9
7. Based on Ra ndom 4KB QD =32 workload, measured as the (IOPS in the 99.9
8. Measurement taken once the workload has reached steady state but including all background activities required for normal operation and data reliability
9. Defaults to 12V, if both 12V and 5V are present
10. Based on 5V supply; refer to Table 7 for more details
11. Please contact your Intel representative for details on the non-operating temperature range
Order Number: 328171-001US
October 2012
percentile of commands to finish the round-trip from host t o drive and back to host
th
percentile slowest 1-second interval)/(average IOPS during the test)
Intel® Solid-State Drive DC S3700
Ordering Information
Contact your local Intel sales repres entative for ordering information .
INFORMATION IN THIS DOCUMENT IS PROVIDED IN CONNECTION WITH INTEL PRODUCTS. NO LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR
OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IS GRANTED BY THIS DOCUMENT. EXCEPT AS PROVIDED IN INTEL'S TERMS AND CONDITIONS
OF SALE FOR SUCH PRODUCTS, INTEL ASSUMES NO LIABILITY WHATSOEVER AND INTEL DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY, RELATING
TO SALE AND/OR USE OF INTEL PRODUCTS INCLUDING LIABILIT Y OR WAR R ANTI E S R ELAT ING T O F IT NE SS FOR A PARTICULAR PURPOSE,
MERCHANTABILITY, OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT.
UNLESS OTHERWISE A GREE D IN WRI TIN G BY I NTEL, THE I NTEL P RODUCTS ARE NOT DESIGNED NOR INTENDED FOR ANY APPLICATION IN WHICH THE
FAILURE OF THE INTEL PRODUCT COULD CREATE A SITUATION WHERE PERSONAL INJURY OR DEATH MAY OCCUR.
Intel may make changes to s pe cifications and p r o d uc t d es criptions at any time, without notice. Designers must not rely on the absence o r character ist ics
of any features or instructions marked "reserved" or "undefined." Intel reserves these for future definition and shall have no responsibility whatsoever for
conflicts or incompatibilities arising from future changes to them. The information here is subject to change without notice. Do not finalize a design with
this information.
The products described in this document may contain design defects or errors known as errata which may cause the product to deviate from published
specifications. Current characterized errata are available on request.
Contact your local I nt el s ales office or your distri butor to obtain the latest specifications and before placing your product order.
Copies of documents which have an order numb e r and a re referenced in this docum e nt , or other Intel literature , may be obtained by calling
1-800-548-4725, or go to: http://www.intel.com/design/literature.htm
Low Halogen applies only to brominated and chlorinated flame retardants (BFRs/CFRs) and PVC in the final product. Intel components as well as purchased
components on the finished assembly meet JS-709 requirements, and the PCB/substrate meet IEC 61249-2-21 requirements. The replacement of
halogenated flame retardants and/or PVC may not be better for th e environment.
8.0 Terms and Acronyms .......................................................................................................... 27
9.0 Revision History ................................................................................................................. 28
Appendix A: IDENTIFY DEVICE Command Data ............................................................................... 28
Order Number: 328171-001US 3
Intel® Solid-State Drive DC S3700
Intel® Solid-State Dr i ve DC S3700
Product Specification October 2012
4 Order Number: 328171-001US
Intel® Solid-State Drive DC S3700
1.0 Overview
This document describes the specifications and capabilities of the Intel SSD DC S3700.
The In tel SSD DC S3700 delivers leading performance a nd Quality of Service combined
with world-class reliability and endurance for Serial A dva n ced T ech n ology A ttac h men t
(SATA)-based computers in four capacities: 100 GB, 200 GB, 400 GB and 800 GB.
By combining 25n m Intel® NAND Flash Memory tech nology w ith SATA 6G b/s interfa ce
support, the Intel SSD DC S3700 delivers sequential r ead speeds of up to 500 MB/s and
sequential write speeds of up to 460 MB/s. Intel SSD DC S3700 delivers Quality of
Service of 500 us for ran dom 4KB r ea ds a nd writes measured at a queue depth of 1.
The Intel SSD DC S3700 also includes High Endurance Technology (HET), which
combines NAND silicon enhancements and SSD NAND management techniques to
extend the write endurance of a n SSD, leading to lifetime en durance levels of 10 drive
writes per day for 5 years.
The industry-standard 2.5-inch form factor enables interchangeability with ex is ting
hard disk drives (HDDs) and native SATA HDD drop-in replacement with the enhanced
performance, reliability, ruggedness, and power savings offered by an SSD.
Intel SSD DC S3700 offers these key features:
• High Endurance Technology (HET)
• High I/O and throughput performance
• Consistent I/O latency
• Enhanced power-loss data protection
• End-to-End data-path protection
• Thermal thr ottling
• Temperature Sensor
• Inrush current management
• Low power
• High reliability
• Enhanced ruggedn es s
• Temperature monitor and logging
• Power loss prot e c tion capacitor se lf-test
October 2012 Product Specification
Order Number: 328171-001US 5
Intel Solid-State Drive DC S3700
Intel® Solid-State Drive DC S3700
Table 1. User Addressable Secto rs
Unformatted Capacity
(Total User Addressable Sectors in LBA Mode)
100 GB
195,371,568
200 GB
390,721,968
400 GB
781,422,768
800 GB
1,562,824,368
Table 2. Random Read/W rite Input/Output Opera t ions Per Second (I OPS)
Intel SSD DC S370 0
100 GB
200 GB
(2.5”/1.8”)
400 GB
(2.5”/1.8”)
Random 4 KB Read (up to)2
IOPS
75,000
75,000 / 75,000
75,000 / 75,000
75,000
Random 4 KB Write (up to)
IOPS
19,000
32,000 / 29,000
36,000 / 36,000
36,000
Random 8 KB Read (up to)3
IOPS
47,500
47,500 / 47,500
47,500 / 47,500
47,500
Random 8 KB Write (up to)
IOPS
9,500
16,500 / 14,500
19,500 / 19,500
20,000
Table 3. Random Read/W rite IOPS Consistency
Intel SSD DC S3700
100 GB
200 GB
(2.5”/1.8”)
400 GB
(2.5”/1.8”)
Random 4 KB Read (up to)2
%
90
90
90
90
Random 4 KB Write (up to)
%
85
90
90
90
Random 8 KB Read (up to)3
%
90
90
90
90
Random 8 KB Write (up to)
%
85
90
90
90
Notes: 1. Performance measured using Iom e te r* wi th Queue Depth 32. Measurements are performed on a full Logical Block
2.0 Product Specifications
2.1 Capacity
Intel SSD DC S3700
Notes: 1 GB = 1,000,000,000 bytes; 1 sector = 512 bytes.
LBA count shown represents total user storage capacity and will remain the same throughout the life of the drive.
The total usable capacity of the SSD may be less than the total physical capacity because a small portion of the capacity
is used for NAND flash management and maintenance purposes.
2.2 Performance
Specification1 Unit
Specification4 Unit
800 GB
800 GB
Address (LBA) span of the drive.
2. 4 KB = 4,096 bytes
3. 8 KB = 8,192 bytes
4. Performance consistency measured using Iometer* based on Random 4KB QD=32 workload, measured as the
(IOPS in the 99.9th percentile slowest 1-second interval)/(average IOPS during the test). Measurements are performed on a full Logical Block Address (LBA) span of the drive once the workload has reached steady state but including all background activities required for normal operation and data reliability
Intel® Solid-State Dr i ve DC S3700
Product Specification October 2012
6 Order Number: 328171-001US
Table 4. Sequential Rea d a nd Write Bandwidth
Intel SSD DC S370 0
100 GB
200 GB
400 GB
800 GB
Sequential Read (SATA 6Gb/s)1
MB/s
500
500
500
500
Seque ntial Write (SATA 6Gb/s)1
MB/s
200
365
460
460
Table 5. Latency
Intel SSD DC S370 0
100, 200, 400 and 800 GB
Table 6. Quality of Service
Intel SSD DC S3700
Queue Depth=1
Queue Depth=32
100 GB
200/400/800
GB
100 GB
200/400/800
GB
Quality of Service
(99.9%)
Reads
ms
0.5
0.5 1 1
Writes
ms
0.5
0.5
15
10
Quality of Service
(99.9999%)
Reads
ms
10 5 10
5
Writes
ms
10 5 20
20
Intel® Solid-State Drive DC S3700
Specification Unit
Notes: 1. Performance measured using Iometer* with 128 KB (131,072 bytes) of transfer size with Queue Depth 32.
Specification
Latency1 (TYP)
Read
Write
Power On to Ready
Specification Unit
3,4
3,4
Notes:
1. Device measured using Iometer. Latency meas ured using 4 KB (4,096 byt es) transfer size with Queue Depth eq ual to 1 on
a sequential workload.
2. Power On To Ready time assumes proper shutdown. Time varies if shutdown is not preceded by STANDBY IMMEDIATE
command.
3. Device measured using Iometer. Quality of Service measured using 4 KB (4,096 bytes) transfer size on a random workload
on a full Logical Block Address (LBA) span of the driveonce the workload has reached steady state but including all
background activities required for normal operation and data reliability.
4. Based on Random 4KB QD=1, 32 workloads, measured as the time taken for 99.9(or 99.9999) percentile of commands to
finish the round-trip from host to drive and back to host.
50 µs
2
65 µs
2.0 s
October 2012 Product Specification
Order Number: 328171-001US 7
Intel Solid-State Drive DC S3700
2.3 Electrical Characteristics
Table 7. Operating Voltage for 2.5-inch Form Fa c t or
Intel SSDDC S3700
100, 200, 400 and 800 GB
Inrush Current (Typical Peak) 1
1.0 A, < 1 s
Intel SSD DC S3700
100 GB
200 GB
400 GB
800 GB
Active Write - RMS Average 1
W
2.8
4.2
5.2
5.8
Active Write - RMS Burst 2
W
8.2
Idle
W
0.6
0.6
0.6
0.6
Intel SSD DC S3700
100 GB
200 GB
400 GB
800 GB
Active Write - RMS Average
W
6.0
Active Write - RMS Burst
W
3.3
4.8
7.6
8.2
Idle
W
0.8
Electrical Characteristics
Intel® Solid-State Drive DC S3700
5 V Operating Characteristics:
Operating Voltage range
12 V Operating Characteristics:
Operating Voltage range
Inrush Current (Typical Peak)
Notes:
1. Measured from initial device power supply application.
2
5 V (±5%)
12 V (±10%)
1.0 A, < 1 s
Table 8. Power Consumption for 2.5-inch Form Factor (5V Supply)
Specification Unit
3.1 4.6 7.7
Table 9. Power Consumption for 2.5-inch Form Facto r ( 12V Su pply)
Specification1 Unit
2.9 4.4 5.4
0.8 0.8 0.8
Notes:
1. The workload equates 128 KB (131,072 bytes) Queue Depth equal to 32 sequential writes. Root Mean Squared (RMS) average
power is measured using scope t rigger over a 100 ms sample period.
2. The workload equat es 12 8 KB (131,0 7 2 by t es) Q ueu e Depth equal to 32 sequential writes. Root Mean Squared (RMS) burst
power is measured using scope t rigger over a 500 us sample period.
Intel® Solid-State Dr i ve DC S3700
Product Specification October 2012
8 Order Number: 328171-001US
Table 10. Operating Voltage and Power Consumption for 1.8-inch Form Factor
Intel SSD DC S3700
200 and 400 GB
Max
3.47 V
Inrush Current (Typical Peak) 1
1.2 A, < 1 s
Intel SSD DC S3700
200 GB
400 GB
Active Write - RMS Average @ 3.3V
W
4.3
5.3
Active Write - RMS Burst @ 3.3V
W
4.7
7.9
Idle @ 3.3V W 0.6
0.6
Table 12. Temperature, Shock, Vi brat i on
Temperature
Range
Non-operating1
-55 – 95 oC
Non-operating
30 oC/hr (Typical)
Non-operating
5 – 95 %
Shock and Vibration
Range
Non-operating
1,000 G (Max) at 0.5 msec
Non-operating
3.13 G
RMS
(5-800 Hz) Max
Intel® Solid-State Drive DC S3700
Electrical Characteristics
Operating Voltage for 3.3 V (±5%)
Min
Notes:
3.13 V
1. Measured from initial device power supply application.
Table 11. Power Consumption for 1.8-inch Form Factor
Specification1 Unit
Notes:
1. The workload equates 128 KB (131,072 bytes) Queue Depth equal to 32 sequenti al writes. Root Mean Squared (RMS) pow er
is measured using scope tri gg er ov e r a 1 0 0 ms sample period.
2.4 Environme nt al Condi t ions
Case Temperature
Operating
0 – 70
o
C
Temperature Gradient
Operating
Humidity
Operating
3
Shock
Operating
Vibration
4
Operating
Notes:
2
30
o
C/hr (Typical)
5 – 95 %
1,000 G (Max) at 0.5 msec
2.17 G
(5-700 Hz) Max
RMS
1. Please contact your Intel representative for details on the non-operating temperature range.
2. Temperature gradient measured without condensation.
3. Shock specifications assume the SSD is mounted securely with the input vibration applied to the drive-mounting screws.
Stimulus may be applied in the X, Y or Z axis. Shock specification is measured using Root Mean Squared (RMS) value.
4. Vibration specifications assume the SSD is mounted securely with the input vibration applied to the drive-mounting screws.
Stimulus may b e ap plied in the X, Y or Z axis. Vibration specification is measured using RMS value.
Intel Solid-State Drive DC S3700
October 2012 Product Specification
Order Number: 328171-001US 9
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