Integrated Silicon Solution IS65C256AL, IS62C256AL User Manual
IS65C256AL
®
IS62C256AL
32K x 8 LOW POWER CMOS STATIC RAM
FEATURES
• Access time: 25 ns, 45 ns
• Low active power: 200 mW (typical)
• Low standby power
— 150 µW (typical) CMOS standby
— 15 mW (typical) operating
• Fully static operation: no clock or refresh
required
• TTL compatible inputs and outputs
• Single 5V power supply
• Lead-free available
• Industrial and Automotive temperatures available
DESCRIPTION
The ISSI IS62C256AL/IS65C256AL is a low power,
32,768 word by 8-bit CMOS static RAM. It is fabricated
using ISSI's high-performance, low power CMOS technology.
When CE is HIGH (deselected), the device assumes a
standby mode at which the power dissipation can be
reduced down to 150 µW (typical) at CMOS input levels.
Easy memory expansion is provided by using an active
LOW Chip Select (CE) input and an active LOW Output
Enable (OE) input. The active LOW Write Enable (WE)
controls both writing and reading of the memory.
The IS62C256AL/IS65C256AL is pin compatible with
other 32Kx8 SRAMs in plastic SOP or TSOP (Type I)
package.
ISSI
Preliminary Information
June 2005
FUNCTIONAL BLOCK DIAGRAM
A0-A14
VDD
GND
I/O0-I/O7
CE
OE
WE
DECODER
I/O
DATA
CIRCUIT
CONTROL
CIRCUIT
32K X 8
MEMORY ARRAY
COLUMN I/O
Copyright © 2005 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability
arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any
published information and before placing orders for products.
Integrated Silicon Solution, Inc. — www.issi.com —
Rev. 00A
06/01/05
1-800-379-4774
1
IS65C256AL
IS62C256AL
®
ISSI
PIN CONFIGURATION
28-Pin SOP
A7
A6
A5
A4
A3
A2
A1
A0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
A14
A12
I/O0
I/O1
I/O2
GND
PIN DESCRIPTIONS
28
27
26
25
24
23
22
21
20
19
18
17
16
15
VDD
WE
A13
A8
A9
A11
OE
A10
CE
I/O7
I/O6
I/O5
I/O4
I/O3
PIN CONFIGURATION
28-Pin TSOP
OE
A11
A9
A8
A13
WE
VDD
A14
A12
A7
A6
A5
A4
A3
22
23
24
25
26
27
28
1
2
3
4
5
6
7
TRUTH TABLE
21
20
19
18
17
16
15
14
13
12
11
10
A10
CE
I/O7
I/O6
I/O5
I/O4
I/O3
GND
I/O2
I/O1
I/O0
A0
A1
9
A2
8
A0-A14 Address Inputs
CE Chip Select Input
OE Output Enable Input
WE Write Enable Input
Mode
Not Selected X H X High-Z ISB1, ISB2
(Power-down)
Output Disabled H L H High-Z ICC1, ICC2
WEWE
WE
WEWE
CECE
OEOE
CE
OE I/O Operation VDD Current
CECE
OEOE
Read H L L DOUT ICC1, ICC2
I/O0-I/O7 Input/Output
Write L L X DIN ICC1, ICC2
VDD Power
GND Ground
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol Parameter Value Unit
VTERM Terminal Voltage with Respect to GND –0.5 to +7.0 V
TSTG Storage Temperature –65 to +150 °C
PT Power Dissipation 0.5 W
IOUT DC Output Current (LOW) 20 mA
Note:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause
permanent damage to the device. This is a stress rating only and functional operation of the
device at these or any other conditions above those indicated in the operational sections of
this specification is not implied. Exposure to absolute maximum rating conditions for extended
periods may affect reliability.
2
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. 00A
06/01/05
IS65C256AL
IS62C256AL
OPERATING RANGE
Part No. Range Ambient Temperature VDD
IS62C256AL Commercial 0°C to +70°C 5V ± 10%
IS62C256AL Industrial –40°C to +85°C 5V ± 10%
IS65C256AL Automotive –40°C to +125°C 5V ± 10%
DC ELECTRICAL CHARACTERISTICS
Symbol Parameter Test Conditions Min. Max. Unit
VOH Output HIGH Voltage VDD = Min., IOH = –1.0 mA 2.4 — V
VOL Output LOW Voltage VDD = Min., IOL = 2.1 mA — 0.4 V
VIH Input HIGH Voltage 2.2 VDD + 0.5 V
VIL Input LOW Voltage
ILI Input Leakage GND ≤ VIN ≤ VDD Com. –1 1 µA
ILO Output Leakage GND ≤ VOUT ≤ VDD, Com. –1 1 µA
Note: 1. VIL = –3.0V for pulse width less than 10 ns.
(1)
Ind. –2 2
Auto. –10 10
Outputs Disabled Ind. –2 2
Auto. –10 10
–0.3 0.8 V
ISSI
®
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. 00A
06/01/05
3
IS65C256AL
IS62C256AL
®
ISSI
POWER SUPPLY CHARACTERISTICS
Symbol Parameter Test Conditions Min. Max. Min. Max. Unit
ICC1 VDD Operating VDD = Max., CE = VIL Com. — 15 — 15 mA
Supply Current IOUT = 0 mA, f = 0 Ind. — 20 — 20
ICC2 VDD Dynamic Operating VDD = Max., CE = V IL Com. — 25 — 20 mA
Supply Current IOUT = 0 mA, f = fMAX Ind. — 30 — 25
ISB1 TTL Standby Current VDD = Max., Com. — 100 — 100
(TTL Inputs) VIN = VIH or VIL Ind. — 120 — 120
CE ≥ VIH, f = 0 Auto. — 150 — 150
ISB2 CMOS Standby VDD = Max., Com. — 15 — 15
Current (CMOS Inputs) CE ≥ VDD – 0.2V, Ind. — 20 — 20
VIN ≥ VDD – 0.2V, or Auto. — 50 — 50
VIN ≤ 0.2V, f = 0 typ.
Note:
1. At f = fMAX, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
2. Typical values are measured at VDD = 5.0V, TA = 25oC and not 100% tested.
(1)
(Over Operating Range)
Auto. — 25 — 25
Auto. — 35 — 30
(2)
typ.
15 12
(2)
-25 ns -45 ns
5 5
µA
µA
CAPACITANCE
Symbol Parameter Conditions Max. Unit
CIN Input Capacitance VIN = 0V 8 pF
COUT Output Capacitance VOUT = 0V 10 pF
Notes:
1. Tested initially and after any design or process changes that may affect these parameters.
2. Test conditions: T
(1,2)
A = 25°C, f = 1 MHz, VDD = 5.0V.
4
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. 00A
06/01/05
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