Integrated Silicon Solution IS42S16100C1 User Manual

IS42S16100C1 ISSI

®

512K Words x 16 Bits x 2 Banks (16-MBIT)

SYNCHRONOUS DYNAMIC RAM

FEATURES

• Clock frequency: 200, 166, 143 MHz

• Fully synchronous; all signals referenced to a
positive clock edge

• Two banks can be operated simultaneously and
independently

• Dual internal bank controlled by A11
(bank select)

• Single 3.3V power supply

• LVTTL interface

• Programmable burst length
– (1, 2, 4, 8, full page)

• Programmable burst sequence:
Sequential/Interleave

• 4096 refresh cycles every 64 ms

• Random column address every clock cycle

• Programmable CAS latency (2, 3 clocks)

• Burst read/write and burst read/single write
operations capability

• Burst termination by burst stop and
precharge command

• Byte controlled by LDQM and UDQM

• Industrial temperature up to 143 MHz

• Packages 400-mil 50-pin TSOP-II, 60-ball fBGA

• Lead-free package option

DESCRIPTION

ISSI’s 16Mb Synchronous DRAM IS42S16100C1 is

organized as a 524,288-word x 16-bit x 2-bank for
improved performance. The synchronous DRAMs
achieve high-speed data transfer using pipeline
architecture. All inputs and outputs signals refer to the
rising edge of the clock input.

PIN CONFIGURATIONS

50-Pin TSOP (Type II)

VDD

DQ0

DQ1

GNDQ

DQ2

DQ3

VDDQ

DQ4

DQ5

GNDQ

DQ6

DQ7

VDDQ

LDQM

WE

CAS

RAS

CS

A11

A10

A0

A1

A2

A3

VDD

NOVEMBER 2006

1

2

3

4

5

6

7

8

9

10

11

12

13

14

15

16

17

18

19

20

21

22

23

24

25

50

GND

49

DQ15

48

IDQ14

47

GNDQ

46

DQ13

45

DQ12

44

VDDQ

43

DQ11

42

DQ10

41

GNDQ

40

DQ9

39

DQ8

38

VDDQ

37

NC

36

UDQM

35

CLK

34

CKE

33

NC

32

A9

31

A8

30

A7

29

A6

28

A5

27

A4

26

GND

PIN DESCRIPTIONS

A0-A11 Address Input

A0-A10 Row Address Input

A11 Bank Select Address

A0-A7 Column Address Input

DQ0 to DQ15 Data DQ

CLK System Clock Input

CKE Clock Enable

CS Chip Select
RAS Row Address Strobe Command

Copyright © 2006 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time
without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to
obtain the latest version of this device specification before relying on any published information and before placing orders for products.

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Rev. D

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CAS Column Address Strobe Command
WE Write Enable

LDQM Lower Bye, Input/Output Mask

UDQM Upper Bye, Input/Output Mask

VDD Power

GND Ground

VDDQ Power Supply for DQ Pin

GNDQ Ground for DQ Pin

NC No Connection

1

IS42S16100C1 ISSI

PIN CONFIGURATION

®

PACKAGE CODE:

B 60 BALL FBGA (Top View) (10.1 mm x 6.4 mm Body, 0.65 mm Ball Pitch)

1 2 3 4 5 6 7

A

VSS

DQ15

DQ0

VDD

B

DQ14

VSSQ

VDDQ

DQ1

C

DQ13

VDDQ

VSSQ

DQ2

D

DQ12

DQ11

DQ4

DQ3

E

DQ10

VSSQ

VDDQ

DQ5

F

DQ9

VDDQ

VSSQ

DQ6

G

DQ8

NC

NC

DQ7

H

NC

NC

NC

NC

J

NC

UDQM

LDQM

WE

K

NC

CLK

RAS

CAS

L

CKE

NC

NC

CS

M

A11

A9

NC

NC

N

A8

A7

A0

A10

P

A6

A5

A2

A1

R

VSS

A4

A3

VDD

PIN DESCRIPTIONS

A0-A10 Row Address Input

A0-A7 Column Address Input

A11 Bank Select Address

DQ0 to DQ15 Data I/O

CLK System Clock Input

CKE Clock Enable

CS Chip Select
RAS Row Address Strobe Command
CAS Column Address Strobe Command

2

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WE Write Enable

LDQM, UDQM x16 Input/Output Mask

VDD Power

Vss Ground

VDDQ Power Supply for I/O Pin

VssQ Ground for I/O Pin

NC No Connection

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®

IS42S16100C1 ISSI

PIN FUNCTIONS

Pin No. Symbol Type Function (In Detail)

20 to 24 A0-A10 Input Pin A0 to A10 are address inputs. A0-A10 are used as row address inputs during active

27 to 32 command input and A0-A7 as column address inputs during read or write command

input. A10 is also used to determine the precharge mode during other commands. If
A10 is LOW during precharge command, the bank selected by A11 is precharged,
but if A10 is HIGH, both banks will be precharged.
When A10 is HIGH in read or write command cycle, the precharge starts
automatically after the burst access.
These signals become part of the OP CODE during mode register set command
input.

19 A11 Input Pin A11 is the bank selection signal. When A11 is LOW, bank 0 is selected and when

high, bank 1 is selected. This signal becomes part of the OP CODE during mode
register set command input.

16 CAS Input Pin CAS, in conjunction with the RAS and WE, forms the device command. See the

“Command Truth Table” item for details on device commands.

34 CKE Input Pin The CKE input determines whether the CLK input is enabled within the device. When

is CKE HIGH, the next rising edge of the CLK signal will be valid, and when LOW,
invalid. When CKE is LOW, the device will be in either the power-down mode, the
clock suspend mode, or the self refresh mode. The CKE is an asynchronous input.

35 CLK Input Pin CLK is the master clock input for this device. Except for CKE, all inputs to this device

are acquired in synchronization with the rising edge of this pin.

18 CS Input Pin The CS input determines whether command input is enabled within the device.

Command input is enabled when CS is LOW, and disabled with CS is HIGH. The
device remains in the previous state when CS is HIGH.

2, 3, 5, 6, 8, 9, 11 DQ0 to DQ Pin DQ0 to DQ15 are DQ pins. DQ through these pins can be controlled in byte units

12, 39, 40, 42, 43, DQ15 using the LDQM and UDQM pins.

45, 46, 48, 49

14, 36 LDQM, Input Pin LDQM and UDQM control the lower and upper bytes of the DQ buffers. In read

UDQM mode, LDQM and UDQM control the output buffer. When LDQM or UDQM is LOW,

the corresponding buffer byte is enabled, and when HIGH, disabled. The outputs go
to the HIGH impedance state when LDQM/UDQM is HIGH. This function
corresponds to OE in conventional DRAMs. In write mode, LDQM and UDQM control
the input buffer. When LDQM or UDQM is LOW, the corresponding buffer byte is
enabled, and data can be written to the device. When LDQM or UDQM is HIGH, input
data is masked and cannot be written to the device.

17 RAS Input Pin RAS, in conjunction with CAS and WE, forms the device command. See the

“Command Truth Table” item for details on device commands.

15 WE Input Pin WE, in conjunction with RAS and CAS, forms the device command. See the

“Command Truth Table” item for details on device commands.

7, 13, 38, 44 VDDQ Power Supply Pin VDDQ is the output buffer power supply.

1, 25 VDD Power Supply Pin VDD is the device internal power supply.

4, 10, 41, 47 GND Q Power Supply Pin GNDQ is the output buffer ground.

26, 50 GND Power Supply Pin GND is the device internal ground.

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3

IS42S16100C1 ISSI

5

FUNCTIONAL BLOCK DIAGRAM

CLK
CKE

CS
RAS
CAS

WE

A11

COMMAND

DECODER

&

CLOCK

GENERATOR

MODE

REGISTER

11

ROW

ADDRESS

BUFFER

11

2048

MEMORY CELL

ARRAY

BANK 0

DQM

®

A10

A9
A8
A7
A6
A5
A4
A3
A2
A1
A0

REFRESH

CONTROLLER

REFRESH

COUNTER

ADDRESS

LATCH

11

ROW

11

SELF

REFRESH

CONTROLLER

MULTIPLEXER

8

11

COLUMN

ADDRESS LATCH

ROW

ADDRESS

BUFFER

COLUMN

BURST COUNTER

11

ADDRESS BUFFER

2048

ROW DECODER ROW DECODER

SENSE AMP I/O GATE

256

COLUMN DECODER

8

256

SENSE AMP I/O GATE

MEMORY CELL

ARRAY

BANK 1

DATA IN

BUFFER

16

DATA OUT

BUFFER

16 16

16

DQ 0-1

VDD/VDDQ

GND/GNDQ

S16BLK.eps

4

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IS42S16100C1 ISSI

®

ABSOLUTE MAXIMUM RATINGS

(1)

Symbol Parameters Rating Unit

VDD MAX Maximum Supply Voltage –1.0 to +4.6 V

VDDQ

MAX Maximum Supply Voltage for Output Buffer –1.0 to +4.6 V

VIN Input Voltage –1.0 to +4.6 V

VOUT Output Voltage –1.0 to +4.6 V

PD MAX Allowable Power Dissipation 1 W

ICS Output Shorted Current 50 mA

TOPR Operating Temperature Com 0 to +70 °C

Ind. -40 to +85 °C

TSTG Storage Temperature –55 to +150 °C

DC RECOMMENDED OPERATING CONDITIONS

(2)

(At TA = 0 to +70°C)

Symbol Parameter Min. Typ. Max. Unit

VDD, VDDQ Supply Voltage 3.0 3.3 3.6 V

VIH Input High Voltage
VIL Input Low Voltage

(3)

(4)

2.0 — VDD + 0.3 V

-0.3 — +0.8 V

CAPACITANCE CHARACTERISTICS

(1,2)

(At TA = 0 to +25°C, VDD = VDDQ = 3.3 ± 0.3V, f = 1 MHz)

Symbol Parameter Typ. Max. Unit

CIN1 Input Capacitance: A0-A11 — 4 pF
CIN2 Input Capacitance: (CLK, CKE, CS, RAS, CAS, WE, LDQM, UDQM) — 4 pF
CI/O Data Input/Output Capacitance: DQ0-DQ15 — 5 pF

Notes:

1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This
is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the
operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended
periods may affect reliability.

2. All voltages are referenced to GND.

3. VIH (max) = VDDQ + 2.0V with a pulse width ≤ 3 ns.

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5

®

IS42S16100C1 ISSI

DC ELECTRICAL CHARACTERISTICS (Recommended Operation Conditions unless otherwise noted.)

Symbol Parameter Test Condition Speed Min. Max. Unit

IIL Input Leakage Current 0V ≤ VIN ≤ VDD, with pins other than –5 5 µA

the tested pin at 0V

IOL Output Leakage Current Output is disabled, 0V ≤ VOUT ≤ VDD –5 5 µA
VOH Output High Voltage Level IOUT = –2 mA 2.4 — V
VOL Output Low Voltage Level IOUT = +2 mA — 0.4 V

ICC1 Operating Current

ICC2P Precharge Standby CurrentCKE ≤ VIL (MAX)tCK = tCK (MIN) Com. — — 3 mA

ICC2PS (In Power-Down Mode) tCK = ∞ Com. — — 2 mA

ICC3N Active Standby Current CKE ≥ VIH (MIN)tCK = tCK (MIN)——40mA
ICC3NS (In Non Power-Down Mode) tCK = ∞ Com. — — 30 mA

ICC4 Operating Current tCK = tCK (MIN) CAS latency = 3 Com. -5 — 170 mA

(In Burst Mode)

ICC5 Auto-Refresh Current tRC = tRC (MIN) CAS latency = 3 Com. -5 — 120 mA

ICC6 Self-Refresh Current CKE ≤ 0.2V — — 1 mA

Notes:

1. These are the values at the minimum cycle time. Since the currents are transient, these values decrease as the cycle time
increases. Also note that a bypass capacitor of at least 0.01 µF should be inserted between VDD and GND for each
memory chip to suppress power supply voltage noise (voltage drops) due to these transient currents.

2. Icc1 and Icc4 depend on the output load. The maximum values for Icc1 and Icc4 are obtained with the output open state.

(1,2)

One Bank Operation, CAS latency = 3 Com. -5 — 170 mA
Burst Length=1 Com. -6 — 160 mA
tRC ≥ tRC (min.) Com. -7 — 140 mA
IOUT = 0mA Ind. -7 — 160 mA

Ind. — — 4 mA

Ind. — — 3 mA

Ind. — — 30 mA

(1)

IOUT = 0mA Com. -6 — 150 mA

Com. -7 — 130 mA

Ind. -7 — 150 mA

CAS latency = 2 Com. -5 — 170 mA

Com. -6 — 150 mA
Com. -7 — 130 mA

Ind. -7 — 150 m

Com. -6 — 100 mA
Com. -7 — 70 mA

Ind. -7 — 90 mA

CAS latency = 2 Com. -5 — 120 mA

Com. -6 — 100 mA
Com. -7 — 70 mA

Ind. -7 — 90 mA

6

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IS42S16100C1 ISSI

®

AC CHARACTERISTICS

(1,2,3)

-5 -6 -7

Symbol Parameter

Min. Max. Min. Max. Min. Max. Units

tCK3 Clock Cycle Time CAS Latency = 3 5 — 6 — 7 — ns
tCK2 CAS Latency = 2 8 — 8 — 8 — ns

tAC3 Access Time From CLK

(4)

CAS Latency = 3 — 5 — 5.5 — 5.5 ns

tAC2 CAS Latency = 2 — 6 — 6 — 6 ns

tCHI CLK HIGH Level Width 2 — 2.5 — 2.5 — ns

tCL CLK LOW Level Width 2 — 2.5 — 2.5 — ns
tOH3 Output Data Hold Time CAS Latency = 3 2 — 2.0 — 2.0 — ns

tOH2 CAS Latency = 2 2.5 — 2.5 — 2.5 — ns

tLZ Output LOW Impedance Time 0 — 0 — 0 — ns
tHZ3 Output HIGH Impedance Time(5) CAS Latency = 3 — 4 — 5.5 — 5.5 ns

tHZ2 CAS Latency = 2 — 6 — 6 — 6 ns
tDS Input Data Setup Time 1.5 — 1.5 — 2 — ns

tDH Input Data Hold Time 1 — 1 — 1 — ns

tAS Address Setup Time 1.5 — 1.5 — 2 — ns

tAH Address Hold Time 1 — 1 — 1 — ns

tCKS CKE Setup Time 1.5 — 1.5 — 2 — ns

tCKH CKE Hold Time 1 — 1 — 1 — ns

tCKA CKE to CLK Recovery Delay Time 1CLK+3 — 1CLK+3 —1CLK+3

—ns

tCS Command Setup Time (CS, RAS, CAS, WE, DQM) 1.5 — 1.5 — 2 — ns
tCH Command Hold Time (CS, RAS, CAS, WE, DQM) 1 — 1 — 1 — ns

tRC Command Period (REF to REF / ACT to ACT) 48 — 54 — 63 — ns

tRAS Command Period (ACT to PRE) 32 — 36 100,000 42 100,000 ns

tRP Command Period (PRE to ACT) 16 — 18 — 20 — ns

tRCD Active Command To Read / Write Command Delay Time 16 — 16 — 16 — ns

tRRD Command Period (ACT [0] to ACT[1]) 11 — 12 — 14 — ns
tDPL3 Input Data To Precharge CAS Latency = 3 — 1CLK 1CLK — 1CLK — ns

Command Delay time

tDPL2 CAS Latency = 2 — 1CLK 1CLK — 1CLK — ns
tDAL3 Input Data To Active / Refresh CAS Latency = 3 1CLK+tRP — 1CLK+tRP — 1CLK+tRP —ns

Command Delay time (During Auto-Precharge)

tDAL2 CAS Latency = 2 1CLK+tRP — 1CLK+tRP — 1CLK+tRP —ns

tT Transition Time 1 10 1 10 1 10 ns

tREF Refresh Cycle Time (4096) — 64 — 64 — 64 ms

Notes:

1. When power is first applied, memory operation should be started 100 µs after V
sequence must be executed before starting memory operation.

2. Measured with tT = 1 ns.

3. The reference level is 1.4 V when measuring input signal timing. Rise and fall times are measured between V

4. Access time is measured at 1.4V with the load shown in the figure below.

5. The time t
output is in the high impedance state.

HZ

(max.) is defined as the time required for the output voltage to transition by ± 200 mV from V

DD

and V

DDQ

reach their stipulated voltages. Also note that the power-on

IH

(min.) and VIL (max.).

OH

(min.) or VOL (max.) when the

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7

IS42S16100C1 ISSI

OPERATING FREQUENCY / LATENCY RELATIONSHIPS

SYMBOL PARAMETER -5 -6 -7 UNITS

— Clock Cycle Time 5 6 7 ns

— Operating Frequency 200 166 143 MHz
tCAC CAS Latency 3 3 3 cycle

tRCD Active Command To Read/Write Command Delay Time 3 3 3 cycle
tRAC RAS Latency (tRCD + tCAC) 6 6 6 cycle

tRC Command Period (REF to REF / ACT to ACT) 9 9 9 cycle

tRAS Command Period (ACT to PRE) 6 6 6 cycle

tRP Command Period (PRE to ACT) 3 3 3 cycle

tRRD Command Period (ACT[0] to ACT [1]) 3 3 3 cycle

tCCD Column Command Delay Time 1 1 1 cycle

(READ, READA, WRIT, WRITA)

tDPL Input Data To Precharge Command Delay Time 1 1 1 cycle

®

tDAL Input Data To Active/Refresh Command Delay Time 4 4 4 cycle

(During Auto-Precharge)

tRBD Burst Stop Command To Output in HIGH-Z Delay Time 3 3 3 cycle

(Read)

tWBD Burst Stop Command To Input in Invalid Delay Time 0 0 0 cycle

(Write)

tRQL Precharge Command To Output in HIGH-Z Delay Time 3 3 3 cycle

(Read)

tWDL Precharge Command To Input in Invalid Delay Time 0 0 0 cycle

(Write)

tPQL Last Output To Auto-Precharge Start Time (Read) -2 –2 –1 cycle

tQMD DQM To Output Delay Time (Read) 2 2 2 cycle

tDMD DQM To Input Delay Time (Write) 0 0 0 cycle

tMCD Mode Register Set To Command Delay Time 2 2 2 cycle

AC TEST CONDITIONS (Input/Output Reference Level: 1.4V)

Input

CLK

INPUT

2.8V

1.4V

0.0V

2.8V

1.4V

0.0V

tCS

tOH

tCHI

tCH

tCK

tCL

tAC

Output Load

I/O

50 Ω

+1.4V

50 pF

OUTPUT

1.4V

8

1.4V

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IS42S16100C1 ISSI

COMMANDS

Active Command Read Command

®

CLK

CKE

CS

RAS

CAS

WE

A0-A9

A10

A11

HIGH

ROW

ROW

BANK 1

BANK 0

CLK

CKE

CS

RAS

CAS

WE

A0-A9

A10

A11

HIGH

COLUMN

AUTO PRECHARGE

NO PRECHARGE

BANK 1

BANK 0

Write Command Precharge Command

CLK

CLK

(1)

HIGH

CKE

CS

RAS

CAS

WE

A0-A9

A10

A11

Notes:

1. A8-A9 = Don’t Care.

COLUMN

AUTO PRECHARGE

(1)

BANK 1

BANK 0

CKE

CS

RAS

CAS

WE

A0-A9

A10

A11

HIGH

BANK 0 AND BANK 1

BANK 0 OR BANK 1NO PRECHARGE

BANK 1

BANK 0

Don't Care

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9

IS42S16100C1 ISSI

COMMANDS (cont.)

No-Operation Command Device Deselect Command

®

CLK

CKE

CS

RAS

CAS

WE

A0-A9

A10

A11

HIGH

CLK

CKE

CS

RAS

CAS

WE

A0-A9

A10

A11

HIGH

Mode Register Set Command Auto-Refresh Command

CLK

CKE

CS

RAS

CAS

WE

A0-A9

A10

A11

HIGH

OP-CODE

OP-CODE

OP-CODE

CLK

CKE

CS

RAS

CAS

WE

A0-A9

A10

A11

HIGH

Don't Care

10

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IS42S16100C1 ISSI

COMMANDS (cont.)

Self-Refresh Command Power Down Command

®

CLK

CKE

CS

RAS

CAS

WE

A0-A9

A10

A11

CLK

CKE

CS

RAS

CAS

WE

A0-A9

A10

A11

ALL BANKS IDLE

NOP

NOP

NOP

NOP

Clock Suspend Command Burst Stop Command

CLK

BANK(S) ACTIVE

CKE

CS

RAS

CAS

WE

A0-A9

A10

A11

NOP

NOP

NOP

NOP

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CLK

CKE

CS

RAS

CAS

WE

A0-A9

A10

A11

1-800-379-4774

HIGH

11

IS42S16100C1 ISSI

Mode Register Set Command

(CS, RAS, CAS, WE = LOW)

The IS42S16100C1 product incorporates a register that
defines the device operating mode. This command
functions as a data input pin that loads this register from
the pins A0 to A11. When power is first applied, the
stipulated power-on sequence should be executed and
then the IS42S16100C1 should be initialized by executing
a mode register set command.

Note that the mode register set command can be executed
only when both banks are in the idle state (i.e. deactivated).

Another command cannot be executed after a mode
register set command until after the passage of the period
tMCD, which is the period required for mode register set
command execution.

Active Command

(CS, RAS = LOW, CAS, WE= HIGH)

The IS42S16100C1 includes two banks of 4096 rows
each. This command selects one of the two banks
according to the A11 pin and activates the row selected
by the pins A0 to A10.

This command corresponds to the fall of the RAS signal
from HIGH to LOW in conventional DRAMs.

When the A10 pin is HIGH, this command functions as a
read with auto-precharge command. After the burst read
completes, the bank selected by pin A11 is precharged.
When the A10 pin is LOW, the bank selected by the A11 pin
remains in the activated state after the burst read completes.

Write Command

(CS, CAS, WE = LOW, RAS = HIGH)

When burst write mode has been selected with the mode
register set command, this command selects the bank
specified by the A11 pin and starts a burst write operation
at the start address specified by pins A0 to A9. This first
data must be input to the DQ pins in the cycle in which this
command.

The selected bank must be activated before executing this
command.

When A10 pin is HIGH, this command functions as a write
with auto-precharge command. After the burst write
completes, the bank selected by pin A11 is precharged.
When the A10 pin is low, the bank selected by the A11 pin
remains in the activated state after the burst write completes.

After the input of the last burst write data, the application
must wait for the write recovery period (tDPL, tDAL) to elapse
according to CAS latency.

®

Precharge Command

(CS, RAS, WE = LOW, CAS = HIGH)

This command starts precharging the bank selected by
pins A10 and A11. When A10 is HIGH, both banks are
precharged at the same time. When A10 is LOW, the bank
selected by A11 is precharged. After executing this
command, the next command for the selected bank(s) is
executed after passage of the period tRP, which is the
period required for bank precharging.

This command corresponds to the RAS signal from LOW
to HIGH in conventional DRAMs

Read Command

(CS, CAS = LOW, RAS, WE = HIGH)

This command selects the bank specified by the A11 pin
and starts a burst read operation at the start address
specified by pins A0 to A9. Data is output following CAS
latency.

The selected bank must be activated before executing
this command.

Auto-Refresh Command

(CS, RAS, CAS = LOW, WE, CKE = HIGH)

This command executes the auto-refresh operation. The
row address and bank to be refreshed are automatically
generated during this operation.

Both banks must be placed in the idle state before executing
this command.

The stipulated period (tRC) is required for a single refresh
operation, and no other commands can be executed during
this period.

The device goes to the idle state after the internal refresh
operation completes.

This command must be executed at least 4096 times every
128 ms.

This command corresponds to CBR auto-refresh in
conventional DRAMs.

12

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IS42S16100C1 ISSI

®

Self-Refresh Command

(CS, RAS, CAS, CKE = LOW, WE = HIGH)

This command executes the self-refresh operation. The
row address to be refreshed, the bank, and the refresh
interval are generated automatically internally during this
operation. The self-refresh operation is started by dropping
the CKE pin from HIGH to LOW. The self-refresh operation
continues as long as the CKE pin remains LOW and there
is no need for external control of any other pins. The
self-refresh operation is terminated by raising the CKE pin
from LOW to HIGH. The next command cannot be executed
until the device internal recovery period (tRC) has elapsed.
After the self-refresh, since it is impossible to determine
the address of the last row to be refreshed, an auto-refresh
should immediately be performed for all addresses (4096
cycles).

Both banks must be placed in the idle state before
executing this command.

Burst Stop Command

(CS, WE, = LOW, RAS, CAS = HIGH)

The command forcibly terminates burst read and write
operations. When this command is executed during a
burst read operation, data output stops after the CAS
latency period has elapsed.

No Operation

(CS, = LOW, RAS, CAS, WE = HIGH)

This command has no effect on the device.

Device Deselect Command

(CS = HIGH)

This command does not select the device for an object of
operation. In other words, it performs no operation with
respect to the device.

Power-Down Command

(CKE = LOW)

When both banks are in the idle (inactive) state, or when
at least one of the banks is not in the idle (inactive) state,
this command can be used to suppress device power
dissipation by reducing device internal operations to the
absolute minimum. Power-down mode is started by dropping
the CKE pin from HIGH to LOW. Power-down mode
continues as long as the CKE pin is held low. All pins other
than the CKE pin are invalid and none of the other
commands can be executed in this mode. The power­down operation is terminated by raising the CKE pin from
LOW to HIGH. The next command cannot be executed
until the recovery period (t

Since this command differs from the self-refresh command
described above in that the refresh operation is not
performed automatically internally, the refresh operation
must be performed within the refresh period (tREF). Thus
the maximum time that power-down mode can be held is
just under the refresh cycle time.

CKA) has elapsed.

Clock Suspend

(CKE = LOW)

This command can be used to stop the device internal
clock temporarily during a read or write cycle. Clock
suspend mode is started by dropping the CKE pin from
HIGH to LOW. Clock suspend mode continues as long as
the CKE pin is held LOW. All input pins other than the CKE
pin are invalid and none of the other commands can be
executed in this mode. Also note that the device internal
state is maintained. Clock suspend mode is terminated by
raising the CKE pin from LOW to HIGH, at which point
device operation restarts. The next command cannot be
executed until the recovery period (tCKA) has elapsed.

Since this command differs from the self-refresh command
described above in that the refresh operation is not
performed automatically internally, the refresh operation
must be performed within the refresh period (tREF). Thus
the maximum time that clock suspend mode can be held
is just under the refresh cycle time.

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13

IS42S16100C1 ISSI

®

COMMAND TRUTH TABLE

(1,2)

CKE

CSCS

RASRAS

CASCAS

Symbol Command n-1 n

(5)

(5,6)

(3,4)

HXLLLLX OP CODE X
H H L L L H X X X X HIGH-Z
HLLLLHXX X XHIGH-Z

MRS Mode Register Set
REF Auto-Refresh
SREF Self-Refresh

CS

CSCS

RAS

RASRAS

WEWE

CAS

WEDQM A11 A10 A9-A0 I/On

CASCAS

WEWE

PRE Precharge Selected Bank H X L L H L X BS L X X
PALL Precharge Both Banks H X L L H L X X H X X
ACT Bank Activate
WRIT Write H X L H L L X BS L Column
WRITA Write With Auto-Precharge
READ Read

(8)

READA Read With Auto-Precharge
BST Burst Stop

(7)

(8)

(8)

(9)

H X L L H H X BS Row Row X

(18)

H X L H L L X BS H Column
H X L H L H X BS L Column
H X L H L H X BS H Column

(18)

(18)

(18)

HXLHHLXXXX X
NOP No Operation H X L HHHXX X X X
DESL Device Deselect H X H XXXXX X X X
SBY Clock Suspend / Standby Mode L XXXXXXX X X X
ENB Data Write / Output Enable H XXXXXLX X X Active
MASK Data Mask / Output Disable H XXXXXHX X XHIGH-Z

X
X
X
X

DQM TRUTH TABLE

(1,2)

CKE DQM

Symbol Command n-1 n UPPER LOWER

ENB Data Write / Output Enable H X L L
MASK Data Mask / Output Disable H X H H
ENBU Upper Byte Data Write / Output Enable H X L X
ENBL Lower Byte Data Write / Output Enable H X X L
MASKU Upper Byte Data Mask / Output Disable H X H X
MASKL Lower Byte Data Mask / Output Disable H X X H

CKE TRUTH TABLE

(1,2)

CKE

CSCS

RASRAS

CASCAS

Symbol Command Current State n-1 n

CS

CSCS

RAS

RASRAS

WEWE

CAS

WE A11 A10 A9-A0

CASCAS

WEWE

SPND Start Clock Suspend Mode Active H L XXXXXXX
— Clock Suspend Other States L L XXXXXXX
— Terminate Clock Suspend Mode Clock Suspend L H XXXXXXX
REF Auto-Refresh Idle H H L L L H X X X
SELF Start Self-Refresh Mode Idle H LLLLHXXX
SELFX Terminate Self-Refresh Mode Self-Refresh L H L HHHXXX

LHHXXXXXX

PDWN Start Power-Down Mode Idle H L L HHHXXX

HLHXXXXXX

— Terminate Power-Down Mode Power-Down L H XXXXXXX

14

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IS42S16100C1 ISSI

®

OPERATION COMMAND TABLE

Current State Command Operation

Idl

e DESL No Operation or Power-Down

NOP No Operation or Power-Down

(1,2)

(12)

(12)

CSCS

RASRAS

CASCAS

CS

CSCS

RAS

RASRAS

WEWE

CAS

WE A11 A10 A9-A0

CASCAS

WEWE

HXXXXXX

LHHHXXX
BST No Operation or Power-Down L H H L X X X
READ / READA Illegal L H L H V V V
WRIT/WRITA Illegal L H L L V V V
ACT Row Active L L H H V V V

(18)

(18)

(18)

PRE/PALL No Operation L L H L V V X
REF/SELF Auto-Refresh or Self-Refresh

(13)

LLLHXXX
MRS Mode Register Set LLLL OP CODE

Row Active DESL No Operation H XXXXXX

NOP No Operation L H H H X X X
BST No Operation L H H L X X X
READ/READA Read Start
WRIT/WRITA Write Start
ACT Illegal
PRE/PALL Precharge

(17)

(17)

(10)

(15)

LHLHVVV

LHLLVVV

LLHHVVV

LLHLVVX

(18)

(18)

(18)

REF/SELF Illegal L L L H X X X
MRS Illegal LLLL OP CODE

Read DESL Burst Read Continues, Row Active When Done H XXXXXX

NOP Burst Read Continues, Row Active When Done L H H H X X X
BST Burst Interrupted, Row Active After Interrupt L H H L X X X

(11,16)

(16)

LHLHVVV

LHLLVVV

LLHHVVV

READ/READA Burst Interrupted, Read Restart After Interrupt
WRIT/WRITA Burst Interrupted Write Start After Interrupt
ACT Illegal

(10)

(18)

(18)

(18)

PRE/PALL Burst Read Interrupted, Precharge After Interrupt L L H L V V X
REF/SELF Illegal L L L H X X X
MRS Illegal LLLL OP CODE

Write DESL Burst Write Continues, Write Recovery When Done H XXXXXX

NOP Burst Write Continues, Write Recovery When Done L H H H X X X
BST Burst Write Interrupted, Row Active After Interrupt L H H L X X X
READ/READA Burst Write Interrupted, Read Start After Interrupt
WRIT/WRITA Burst Write Interrupted, Write Restart After Interrupt
ACT Illegal

(10)

(11,16)

LHLHVVV

(16)

LHLLVVV

LLHHVVV

(18)

(18)

(18)

PRE/PALL Burst Write Interrupted, Precharge After Interrupt L L H L V V X
REF/SELF Illegal L L L H X X X
MRS Illegal LLLL OP CODE

Read With DESL Burst Read Continues, Precharge When Done H XXXXXX
Auto- NOP Burst Read Continues, Precharge When Done L H H H X X X

Precharge BST Illegal L H H L X X X

READ/READA Illegal L H L H V V V
WRIT/WRITA Illegal L H L L V V V
ACT Illegal
PRE/PALL Illegal

(10)

(10)

LLHHVVV

LLHLVVX

(18)

(18)

(18)

REF/SELF Illegal L L L H X X X
MRS Illegal LLLL OP CODE

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IS42S16100C1 ISSI

®

OPERATION COMMAND TABLE

Current State Command Operation

(1,2)

CSCS

CS

CSCS

RASRAS

RAS

RASRAS

CASCAS

WEWE

CAS

WE A11 A10 A9-A0

CASCAS

WEWE

Write With DESL Burst Write Continues, Write Recovery And Precharge H XXXXXX
Auto-Precharge When Done

NOP Burst Write Continues, Write Recovery And Precharge L HHHXXX
BST Illegal L H H L X X X
READ/READA Illegal L H L H V V V
WRIT/WRITA Illegal L H L L V V V
ACT Illegal
PRE/PALL Illegal

(10)
(10)

LLHHVVV
LLHLVVX

(18)
(18)
(18)

REF/SELF Illegal L L L H X X X
MRS Illegal LLLL OPCODE

Row Precharge DESL No Operation, Idle State After tRP Has Elapsed H XXXXXX

NOP No Operation, Idle State After tRP Has Elapsed L H H H X X X
BST No Operation, Idle State After tRP Has Elapsed L HHLXXX
READ/READA Illegal
WRIT/WRITA Illegal
ACT Illegal
PRE/PALL No Operation, Idle State After tRP Has Elapsed

(10)
(10)
(10)

(10)

LHLHVVV
LHLLVVV
LLHHVVV
LLHLVVX

(18)
(18)
(18)

REF/SELF Illegal L L L H X X X
MRS Illegal LLLL OP CODE

Immediately DESL No Operation, Row Active After tRCD Has Elapsed H XXXXXX
Following NOP No Operation, Row Active After tRCD Has Elapsed L H H H X X X

Row Active BST No Operation, Row Active After tRCD Has Elapsed L H H L X X X

READ/READA Illegal
WRIT/WRITA Illegal
ACT Illegal
PRE/PALL Illegal

(10)

(10)
(10,14)
(10)

LHLHVVV
LHLLVVV
L LHHVVV
LLHLVVX

(18)
(18)
(18)

REF/SELF Illegal L L L H X X X
MRS Illegal LLLL OP CODE

Write DESL No Operation, Row Active After t
Recovery NOP No Operation, Row Active After tDPL Has Elapsed L H H H X X X

BST No Operation, Row Active After t

READ/READA Read Start L H L H V V V
WRIT/WRITA Write Restart L H L L V V V
ACT Illegal
PRE/PALL Illegal

(10)
(10)

DPL Has ElapsedH XXXXXX

DPL Has Elapsed LHHLXXX

(18)
(18)

L LHHVVV

(18)

LLHLVVX
REF/SELF Illegal L L L H X X X
MRS Illegal LLLL OP CODE

16

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IS42S16100C1 ISSI

®

OPERATION COMMAND TABLE

Current State Command Operation

(1,2)

CSCS

CS

CSCS

RASRAS

RAS

RASRAS

CASCAS

WEWE

CAS

WE A11 A10 A9-A0

CASCAS

WEWE

Write Recovery DESL No Operation, Idle State After tDAL Has Elapsed H XXXXXX
With Auto- NOP No Operation, Idle State After tDAL Has Elapsed L H H H X X X

Precharge BST No Operation, Idle State After tDAL Has Elapsed L H H L X X X

READ/READA Illegal
WRIT/WRITA Illegal
ACT Illegal
PRE/PALL Illegal

(10)

(10)

(10)

(10)

LHLHVVV
LHLLVVV
LLHHVVV
LLHLVVX

(18)

(18)

(18)

REF/SELF Illegal L L L H X X X
MRS Illegal LLLL OP CODE

Refresh DESL No Operation, Idle State After tRP Has Elapsed H XXXXXX

NOP No Operation, Idle State After tRP Has Elapsed L H H H X X X
BST No Operation, Idle State After tRP Has Elapsed L H H L X X X
READ/READA Illegal L H L H V V V
WRIT/WRITA Illegal L H L L V V V
ACT Illegal L L H H V V V

(18)

(18)

(18)

PRE/PALL Illegal L L H L V V X
REF/SELF Illegal L L L H X X X
MRS Illegal LLLL OP CODE

Mode Register DESL No Operation, Idle State After tMCD Has Elapsed H XXXXXX
Set NOP No Operation, Idle State After tMCD Has Elapsed L H H H X X X

BST No Operation, Idle State After tMCD Has Elapsed L H H L X X X
READ/READA Illegal L H L H V V V
WRIT/WRITA Illegal L H L L V V V
ACT Illegal L L H H V V V

(18)

(18)

(18)

PRE/PALL Illegal L L H L V V X
REF/SELF Illegal L L L H X X X
MRS Illegal LLLL OP CODE

Notes:

1. H: HIGH level input, L: LOW level input, X: HIGH or LOW level input, V: Valid data input

2. All input signals are latched on the rising edge of the CLK signal.

3. Both banks must be placed in the inactive (idle) state in advance.

4. The state of the A0 to A11 pins is loaded into the mode register as an OP code.

5. The row address is generated automatically internally at this time. The DQ pin and the address pin data is ignored.

6. During a self-refresh operation, all pin data (states) other than CKE is ignored.

7. The selected bank must be placed in the inactive (idle) state in advance.

8. The selected bank must be placed in the active state in advance.

9. This command is valid only when the burst length set to full page.

10. This is possible depending on the state of the bank selected by the A11 pin.

11. Time to switch internal busses is required.

12. The IS42S16100C1 can be switched to power-down mode by dropping the CKE pin LOW when both banks in the idle
state. Input pins other than CKE are ignored at this time.

13. The IS42S16100C1 can be switched to self-refresh mode by dropping the CKE pin LOW when both banks in the idle state.
Input pins other than CKE are ignored at this time.

14. Possible if tRRD is satisfied.

15. Illegal if tRAS is not satisfied.

16. The conditions for burst interruption must be observed. Also note that the IS42S16100C1 will enter the precharged state
immediately after the burst operation completes if auto-precharge is selected.

17. Command input becomes possible after the period tRCD has elapsed. Also note that the IS42S16100C1 will enter the
precharged state immediately after the burst operation completes if auto-precharge is selected.

18. A8,A9 = don’t care.

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IS42S16100C1 ISSI

®

CKE RELATED COMMAND TRUTH TABLE

(1)

CKE

CSCS

RASRAS

CASCAS

Current State Operation n-1 n

CS

CSCS

RAS

RASRAS

WEWE

CAS

WE A11 A10 A9-A0

CASCAS

WEWE

Self-Refresh Undefined H XXXXXXXX

Self-Refresh Recovery
Self-Refresh Recovery

(2)

Illegal

(2)

Illegal

(2)

(2)

LHHXXXXXX
LHLHHXXXX
LHLHLXXXX
LHL LXXXXX

Self-Refresh L L XXXXXXX

Self-Refresh Recovery Idle State After tRC Has Elapsed H H H XXXXXX

Idle State After tRC Has Elapsed H H L H H XXXX
Illegal H H L H L XXXX
Illegal H H L L XXXXX
Power-Down on the Next Cycle H L H XXXXXX
Power-Down on the Next Cycle H L L H H XXXX
Illegal H L L H L XXXX
Illegal H L L L XXXXX
Clock Suspend Termination on the Next Cycle

(2)

LHXXXXXXX

Clock Suspend L L XXXXXXX

Power-Down Undefined H XXXXXXXX

Power-Down Mode Termination, Idle After L H XXXXXXX
That Termination

(2)

Power-Down Mode L L XXXXXXX

Both Banks Idle No Operation H H H XXXXXX

See the Operation Command Table H H L H XXXXX
Bank Active Or Precharge H H L L H XXXX
Auto-Refresh H H L L L H X X X
Mode Register Set H H LLLL OP CODE
See the Operation Command Table H L H XXXXXX
See the Operation Command Table H L L H XXXXX
See the Operation Command Table H L L L H XXXX
Self-Refresh

(3)

HLLLLHXXX
See the Operation Command Table H LLLLL OP CODE
Power-Down Mode

(3)

LXXXXXXXX

Other States See the Operation Command Table H H XXXXXXX

Clock Suspend on the Next Cycle

(4)

HLXXXXXXX
Clock Suspend Termination on the Next Cycle L H XXXXXXX
Clock Suspend Termination on the Next CycleL L XXXXXXX

Notes:

1. H: HIGH level input, L: LOW level input, X: HIGH or LOW level input

2. The CLK pin and the other input are reactivated asynchronously by the transition of the CKE level from LOW to HIGH.
The minimum setup time (tCKA) required before all commands other than mode termination must be satisfied.

3. Both banks must be set to the inactive (idle) state in advance to switch to power-down mode or self-refresh mode.

4. The input must be command defined in the operation command table.

18

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IS42S16100C1 ISSI

®

TWO BANKS OPERATION COMMAND TRUTH TABLE

(1,2)

Previous State Next State

CSCS

RASRAS

CASCAS

Operation

CS

CSCS

RAS

RASRAS

WEWE

CAS

WE A11 A10 A9-A0 BANK 0 BANK 1 BANK 0BANK 1

CASCAS

WEWE

DESL H XXXXXX AnyAny Any Any
NOP L H H H X X X Any Any Any Any
BST L H H L X X X R/W/A I/A A I/A

I I/A I I/A
I/A R/W/A I/A A
I/A I I/A I

READ/READA L H L H H H CA

HHCA
HLCA
HLCA

LHCA
LHCA
LLCA
LLCA

WRIT/WRITA L H L L H H CA

HHCA
HLCA
HLCA

LHCA
LHCA
LLCA
LLCA

(3)

(3)

(3)

(3)

(3)

(3)

(3)

(3)

(3)

(3)

(3)

(3)

(3)

(3)

(3)

(3)

I/A R/W/A I/A RP

R/W A A RP

I/A R/W/A I/A R

R/W A A R

R/W/A I/A RP I/A

A R/W RP A

R/W/A I/A R I/A

A R/W R A

I/A R/W/A I/A WP

R/W A A WP

I/A R/W/A I/A W

R/W A A W

R/W/A I/A WP I/A

A R/W WP A

R/W/A I/A W I/A

A R/W W A

ACT L L H H H RA RA Any I Any A

L RA RA I Any A Any

PRE/PALL L L H L X H X R/W/A/I I/A I I

X H X I/A R/W/A/I I I
H L X I/A R/W/A/I I/A I
H L X R/W/A/I I/A R/W/A/I I

L L X R/W/A/I I/A I I/A

L L X I/A R/W/A/I I R/W/A/I
REF LLLHXXX II II
MRS LLLL OPCODE I I I I

Notes:

1. H: HIGH level input, L: LOW level input, X: HIGH or LOW level input, RA: Row Address, CA: Column Address

2. The device state symbols are interpreted as follows:

I Idle (inactive state)
A Row Active State
R Read
W Write
RP Read With Auto-Precharge
WP Write With Auto-Precharge
Any Any State

3. CA: A8,A9 = don’t care.

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IS42S16100C1 ISSI

SIMPLIFIED STATE TRANSITION DIAGRAM (One Bank Operation)

SELF

REFRESH

SREF entry

SREF exit

®

WRIT

CKE_

MODE

REGISTER

MRS

IDLE

REF

SET

CKE_

CKE

ACT

CKE_

CKE

READ

BANK

ACTIVE

READ

READA

BST BST

WRIT

WRITA

WRITE

WRIT

AUTO

REFRESH

IDLE

POWER

DOWN

ACTIVE

POWER

DOWN

READ

READ

CKE_

20

CLOCK

SUSPEND

POWER APPLIED

CKE

WRITA

CKE_

CKE

WRITE WITH

AUTO

PRECHARGE

POWER ON

Automatic transition following the
completion of command execution.

Transition due to command input.

WRITA

READA

READA

CKE_

READ WITH

CKE

CLOCK

SUSPEND

CKE

AUTO

PRECHARGE

PRE

PRE

PRE-

CHARGE

PRE

PRE

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IS42S16100C1 ISSI

®

Device Initialization At Power-On

(Power-On Sequence)

As is the case with conventional DRAMs, the IS42S16100C1
product must be initialized by executing a stipulated power­on sequence after power is applied.

After power is applied and VDD and VDDQ reach their
stipulated voltages, set and hold the CKE and DQM pins
HIGH for 100 µs. Then, execute the precharge command to
precharge both bank. Next, execute the auto-refresh
command twice or more and define the device operation
mode by executing a mode register set command.

The mode register set command can be also set before
auto-refresh command.

Mode Register Settings

The mode register set command sets the mode register.
When this command is executed, pins A0 to A9, A10, and
A11 function as data input pins for setting the register, and
this data becomes the device internal OP code. This OP
code has four fields as listed in the table below.

Burst Length

When writing or reading, data can be input or output data
continuously. In these operations, an address is input only
once and that address is taken as the starting address
internally by the device. The device then automatically
generates the following address. The burst length field in
the mode register stipulates the number of data items input
or output in sequence. In the IS42S16100C1 product, a
burst length of 1, 2, 4, 8, or full page can be specified. See
the table on the next page for details on setting the mode
register.

Burst Type

The burst data order during a read or write operation is
stipulated by the burst type, which can be set by the mode
register set command. The IS42S16100C1 product supports
sequential mode and interleaved mode burst type settings.
See the table on the next page for details on setting the
mode register. See the “Burst Length and Column Address
Sequence” item for details on DQ data orders in these
modes.

Input Pin Field

A11, A10, A9, A8, A7 Mode Options

A6, A5, A4 CAS Latency

A3 Burst Type

A2, A1, A0 Burst Length

Note that the mode register set command can be executed
only when both banks are in the idle (inactive) state. Wait
at least two cycles after executing a mode register set
command before executing the next command.

CASCAS

CAS Latency

CASCAS

During a read operation, the between the execution of the
read command and data output is stipulated as the CAS
latency. This period can be set using the mode register set
command. The optimal CAS latency is determined by the
clock frequency and device speed grade. See the “Operating
Frequency / Latency Relationships” item for details on the
relationship between the clock frequency and the CAS
latency. See the table on the next page for details on setting
the mode register.

Write Mode

Burst write or single write mode is selected by the OP code
(A11, A10, A9) of the mode register.

A burst write operation is enabled by setting the OP code
(A11, A10, A9) to (0,0,0). A burst write starts on the same
cycle as a write command set. The write start address is
specified by the column address and bank select address
at the write command set cycle.

A single write operation is enabled by setting OP code
(A11, A10, A9) to (0, 0,1). In a single write operation, data
is only written to the column address and bank select
address specified by the write command set cycle without
regard to the bust length setting.

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IS42S16100C1 ISSI

MODE REGISTER

A11 A10 A9 A8 A7 A6 A5 A4 A3 A2 A1 A0

WRITE MODE LT MODE BT BL

Burst Length 0 0 0 1 1

Address Bus (Ax)

Mode Register (Mx)

M2 M1 M0 Sequential Interleaved

001 2 2
010 4 4
011 8 8
1 0 0 Reserved Reserved
1 0 1 Reserved Reserved
1 1 0 Reserved Reserved
1 1 1 Full Page Reserved

®

Burst Type 0 Sequential

Latency Mode 0 0 0 Reserved

M11 M10 M9 M8 M7 Write Mode

00100 Burst Read & Single Write
00000 Burst Read & Burst Write

Note: Other values for these bits are reserved.

M3 Type

1 Interleaved

M6 M5 M4

0 0 1 Reserved
010 2
011 3
1 0 0 Reserved
1 0 1 Reserved
1 1 0 Reserved
1 1 1 Reserved

CASCAS

CAS Latency

CASCAS

22

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IS42S16100C1 ISSI

BURST LENGTH AND COLUMN ADDRESS SEQUENCE

Column Address Address Sequence

Burst Length A2 A1 A0 Sequential Interleaved

2 X X 0 0-1 0-1

X X 1 1-0 1-0

4 X 0 0 0-1-2-3 0-1-2-3

X 0 1 1-2-3-0 1-0-3-2
X 1 0 2-3-0-1 2-3-0-1
X 1 1 3-0-1-2 3-2-1-0

8 0 0 0 0-1-2-3-4-5-6-7 0-1-2-3-4-5-6-7

0 0 1 1-2-3-4-5-6-7-0 1-0-3-2-5-4-7-6
0 1 0 2-3-4-5-6-7-0-1 2-3-0-1-6-7-4-5
0 1 1 3-4-5-6-7-0-1-2 3-2-1-0-7-6-5-4
1 0 0 4-5-6-7-0-1-2-3 4-5-6-7-0-1-2-3
1 0 1 5-6-7-0-1-2-3-4 5-4-7-6-1-0-3-2
1 1 0 6-7-0-1-2-3-4-5 6-7-4-5-2-3-0-1
1 1 1 7-0-1-2-3-4-5-6 7-6-5-4-3-2-1-0

®

Full Page n n n Cn, Cn+1, Cn+2 None

(256) Cn+3, Cn+4.....

...Cn-1(Cn+255),

Cn(Cn+256).....

Notes:

1. The burst length in full page mode is 256.

Integrated Silicon Solution, Inc. — www.issi.com —

Rev. D

11/03/06

1-800-379-4774

23

IS42S16100C1 ISSI

BANK SELECT AND PRECHARGE ADDRESS ALLOCATION

Row X0 — Row Address

X1 — Row Address
X2 — Row Address
X3 — Row Address
X4 — Row Address
X5 — Row Address
X6 — Row Address
X7 — Row Address

X8 — Row Address

X9 — Row Address

X10 0 Precharge of the Selected Bank (Precharge Command) Row Address

1 Precharge of Both Banks (Precharge Command) (Active Command)

X11 0 Bank 0 Selected (Precharge and Active Command)

1 Bank 1 Selected (Precharge and Active Command)

Column Y0 — Column Address

Y1 — Column Address
Y2 — Column Address
Y3 — Column Address
Y4 — Column Address
Y5 — Column Address
Y6 — Column Address
Y7 — Column Address
Y8 — Don’t Care
Y9 — Don’t Care

Y10 0 Auto-Precharge - Disabled

1 Auto-Precharge - Enables

Y11 0 Bank 0 Selected (Read and Write Commands)

1 Bank 1 Selected (Read and Write Commands)

®

24

Integrated Silicon Solution, Inc. — www.issi.com —

1-800-379-4774

Rev. D

11/03/06

IS42S16100C1 ISSI

Burst Read

The read cycle is started by executing the read command.
The address provided during read command execution is
used as the starting address. First, the data corresponding
to this address is output in synchronization with the clock
signal after the CAS latency period. Next, data corresponding
to an address generated automatically by the device is
output in synchronization with the clock signal.

The output buffers go to the LOW impedance state CAS
latency minus one cycle after the read command, and go
to the HIGH impedance state automatically after the last
data is output. However, the case where the burst length

CLK

is a full page is an exception. In this case the output
buffers must be set to the high impedance state by
executing a burst stop command.

Note that upper byte and lower byte output data can be
masked independently under control of the signals applied
to the U/LDQM pins. The delay period (tQMD) is fixed at two,
regardless of the CAS latency setting, when this function
is used.

The selected bank must be set to the active state before
executing this command.

®

COMMAND

UDQM

LDQM

DQ8-DQ15

DQ0-DQ 7

CAS latency = 3, burst length = 4

READ A0

t

QMD=2

D

READ (CA=A, BANK 0) DATA MASK (LOWER BYTE)

DATA MASK (UPPER BYTE)

Burst Write

The write cycle is started by executing the command. The
address provided during write command execution is used
as the starting address, and at the same time, data for this
address is input in synchronization with the clock signal.

Next, data is input in other in synchronization with the clock
signal. During this operation, data is written to address
generated automatically by the device. This cycle
terminates automatically after a number of clock cycles
determined by the stipulated burst length. However, the
case where the burst length is a full page is an exception.
In this case the write cycle must be terminated by executing

OUT

OUT

A0

A0

OUT

D

HI-Z

D

OUT

A2 D

OUT

A3

HI-Z

A1D

HI-Z

a burst stop command. The latency for DQ pin data input
is zero, regardless of the CAS latency setting. However, a
wait period (write recovery: tDPL) after the last data input is
required for the device to complete the write operation.

Note that the upper byte and lower byte input data can be
masked independently under control of the signals applied
to the U/LDQM pins. The delay period (tDMD) is fixed at zero,
regardless of the CAS latency setting, when this function
is used.

The selected bank must be set to the active state before
executing this command.

CLK

COMMAND

DQ

WRITE

DIN 0DIN 1DIN 2DIN 3

BURST LENGTH

CAS latency = 2,3, burst length = 4

Integrated Silicon Solution, Inc. — www.issi.com —

Rev. D

11/03/06

1-800-379-4774

25