INTEGRAL IW4015BN, IW4015BD Datasheet
TECHNICAL DATA
Dual 4-Stage Static Shift Register
High-Voltage Silicon-Gate CMOS
The IW4015B consists of two identical, independent, 4-stage
serial-input/parallel-output registers. Each register has independent
CLOCK and RESET inputs as well as a single serial DATA input. “Q”
outputs are available from each of the four stages on both registers. All
register stages are D-type, master-slave flip-flops. The logic level
present at the DATA input is transferred into the first register stage and
shifted over one stage at each positive-going clock transition. Resetting
of all stages is accomplished by a high level on the reset line. Register
expansion to 8 stages using one IW4015B package, or to more than 8
stages using additional IW4015B’s is possible.
•
Operating Voltage Range: 3.0 to 18 V
•
Maximum input current of 1 µA at 18 V over full package-
temperature range; 100 nA at 18 V and 25°C
•
Noise margin (over full package temperature range):
1.0 V min @ 5.0 V supply
2.0 V min @ 10.0 V supply
2.5 V min @ 15.0 V supply
IW4015B
ORDERING INFORMATION
IW4015BN Plastic
IW4015BD SOIC
TA = -55° to 125° C for all packages
PIN ASSIGNMENT
LOGIC DIAGRAM
PIN 16=V
PIN 8= GND
CC
FUNCTION TABLE
Inputs Outputs
Clock Data Reset Q1 Q
LLLQ
HLHQ
X L No change
XXHLL
X = don’t care
n
n-1
n-1
24
IW4015B
MAXIMUM RATINGS
*
Symbol Parameter Value Unit
V
CC
V
V
OUT
I
IN
P
P
DC Supply Voltage (Referenced to GND) -0.5 to +20 V
DC Input Voltage (Referenced to GND) -0.5 to VCC +0.5 V
IN
DC Output Voltage (Referenced to GND) -0.5 to VCC +0.5 V
DC Input Current, per Pin
Power Dissipation in Still Air, Plastic DIP+
D
SOIC Package+
Power Dissipation per Output Transistor 100 mW
D
±
10
750
500
Tstg Storage Temperature -65 to +150
T
Lead Temperature, 1 mm from Case for 10 Seconds
L
260
(Plastic DIP or SOIC Package)
*
Maximum Ratings are those values beyond which damage to the device may occur.
Functional operation should be restricted to the Recommended Operating Conditions.
+Derating - Plastic DIP: - 10 mW/°C from 65° to 125°C
SOIC Package: : - 7 mW/°C from 65° to 125°C
RECOMMENDED OPERATING CONDITIONS
Symbol Parameter Min Max Unit
V
VIN, V
T
CC
A
DC Supply Voltage (Referenced to GND) 3.0 18 V
DC Input Voltage, Output Voltage (Referenced to GND) 0 V
OUT
Operating Temperature, All Package Types -55 +125
CC
mA
mW
°
C
°
C
V
°
C
This device c ontains p rote ction ci rcuitr y to guard a gainst damage d ue to high st atic voltages or electr ic
fields. However, precautions must be taken to avoid applications of any voltage higher than maximum rated
voltages to this high-impedance circuit. For proper operation, V
GND≤(V
IN
or V
OUT
)≤VCC.
Unused inputs must always be tied to an appropriate logic voltage level (e.g., either GND or V
and V
IN
should be constrained to the range
OUT
CC
Unused outputs must be left open.
25
).
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