INTEGRAL IN74HC258N, IN74HC258D Datasheet
TECHNICAL DATA
326
Quad 2-Input Data Selectors/Multiplexer
with 3-State Outputs
High-Performance Silicon-Gate CMOS
The IN74HC258 is identical in pinout to the LS/ALS258. The
device inputs are compatible with standard CMOS outputs; with pullup
resistors, they are compatible with LS/ALSTTL outputs.
This device selects a (4-bit) nibble from either the A or B inputs as
determined by the Select input. The nibble is presented at the outputs
in inverted form when the Output Enable pin is at a low level. A high
level on the Output Enable pin switches the outputs into the highimpedance state.
•
Outputs Directly Interface to CMOS, NMOS, and TTL
•
Operating Voltage Range: 2.0 to 6.0 V
•
Low Input Current: 1.0 µA
•
High Noise Immunity Characteristic of CMOS Devices
IN74HC258
ORDERING INFORMATION
IN74HC258N Plastic
IN74HC258D SOIC
TA = -55° to 125° C for all packages
FUNCTION TABLE
Inputs Outputs
Output
Enable
Select Y0-Y3
HXZ
LLA0-A3
LHB0-B3
X=don’t care
Z = high-impedance st ate
A0-A3,B0-B3=the levels of the respective
Nibble Inputs
LOGIC DIAGRAM
PIN 16 =V
CC
PIN 8 = GND
PIN ASSIGNMENT
IN74HC258
327
MAXIMUM RATINGS
*
Symbol Parameter Value Unit
V
CC
DC Supply Voltage (Referenced to GND) -0.5 to +7.0 V
V
IN
DC Input Voltage (Referenced to GND) -1.5 to VCC +1.5 V
V
OUT
DC Output Voltage (Referenced to GND) -0.5 to VCC +0.5 V
I
IN
DC Input Current, per Pin
±
20
mA
I
OUT
DC Output Current, per Pin
±
35
mA
I
CC
DC Supply Current, VCC and GND Pins
±
75
mA
P
D
Power Dissipation in Still Air, Plastic DIP+
SOIC Package+
750
500
mW
Tstg Storage Temperature -65 to +150
°
C
T
L
Lead Temperature, 1 mm from Case for 10 Seconds
(Plastic DIP or SOIC Package)
260
°
C
*
Maximum Ratings are those values beyond which damage to the device may occur.
Functional operation should be restricted to the Recommended Operating Conditions.
+Derating - Plastic DIP: - 10 mW/°C from 65° to 125°C
SOIC Package: : - 7 mW/°C from 65° to 125°C
RECOMMENDED OPERATING CONDITIONS
Symbol Parameter Min Max Unit
V
CC
DC Supply Voltage (Referenced to GND) 2.0 6.0 V
VIN, V
OUT
DC Input Voltage, Output Voltage (Referenced to GND) 0 V
CC
V
T
A
Operating Temperature, All Package Types -55 +125
°
C
tr, t
f
Input Rise and Fall Time (Figure 1) VCC =2.0 V
V
CC
=4.5 V
V
CC
=6.0 V
0
0
0
1000
500
400
ns
This device c ontains p rote ction ci rcuitr y to guard a gainst damage d ue to high st atic voltages or electr ic
fields. However, precautions must be taken to avoid applications of any voltage higher than maximum rated
voltages to this high-impedance circuit. For proper operation, V
IN
and V
OUT
should be constrained to the range
GND≤(V
IN
or V
OUT
)≤VCC.
Unused inputs must always be tied to an appropriate logic voltage level (e.g., either GND or V
CC
).
Unused outputs must be left open.
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