INTEGRAL IN74AC10D, IN74AC10N Datasheet
TECHNICAL DATA
35
Triple 3-Input NAND Gate
High-Speed Silicon-Gate CMOS
The IN74AC10 is identical in pinout to the LS/ALS10,
HC/HCT10. The device inputs are compatible with standard CMOS
outputs; with pullup resistors, they are compatible with LS/ALS
outputs.
•
Outputs Directly Interface to CMOS, NMOS, and TTL
•
Operating Voltage Range: 2.0 to 6.0 V
•
Low Input Current: 1.0 µA; 0.1 µA @ 25°C
•
High Noise Immunity Characteristic of CMOS Devices
•
Outputs Source/Sink 24 mA
IN74AC10
ORDERING INFORMATION
IN74AC10N Plastic
IN74AC10D SOIC
TA = -40° to 85° C for all
packages
LOGIC DIAGRAM
PIN 14 =V
CC
PIN 7 = GND
PIN ASSIGNMENT
FUNCTION TABLE
Inputs Output
ABC Y
LXX H
XLX H
XXL H
HHH L
X = don’t care
IN74AC10
36
MAXIMUM RATINGS
*
Symbol Parameter Value Unit
V
CC
DC Supply Voltage (Referenced to GND) -0.5 to +7.0 V
V
IN
DC Input Voltage (Referenced to GND) -0.5 to VCC +0.5 V
V
OUT
DC Output Voltage (Referenced to GND) -0.5 to VCC +0.5 V
I
IN
DC Input Current, per Pin
±
20
mA
I
OUT
DC Output Sink/Source Current, per Pin
±
50
mA
I
CC
DC Supply Current, VCC and GND Pins
±
50
mA
P
D
Power Dissipation in Still Air, Plastic DIP+
SOIC Package+
750
500
mW
Tstg Storage Temperature -65 to +150
°
C
T
L
Lead Temperature, 1 mm from Case for 10 Seconds
(Plastic DIP or SOIC Package)
260
°
C
*
Maximum Ratings are those values beyond which damage to the device may occur.
Functional operation should be restricted to the Recommended Operating Conditions.
+Derating - Plastic DIP: - 10 mW/°C from 65° to 125°C
SOIC Package: : - 7 mW/°C from 65° to 125°C
RECOMMENDED OPERATING CONDITIONS
Symbol Parameter Min Max Unit
V
CC
DC Supply Voltage (Referenced to GND) 2.0 6.0 V
VIN, V
OUT
DC Input Voltage, Output Voltage (Referenced to GND) 0 V
CC
V
T
J
Junction Temperature (PDIP) 140
°
C
T
A
Operating Temperature, All Package Types -40 +85
°
C
I
OH
Output Current - High -24 mA
I
OL
Output Current - Low 24 mA
tr, t
f
Input Rise and Fall Time
*
(except Schmitt Inputs)
V
CC
=3.0 V
V
CC
=4.5 V
V
CC
=5.5 V
0
0
0
150
40
25
ns/V
*
V
IN
from 30% to 70% V
CC
This device c ontains p rote ction ci rcuitr y to guard a gainst damage d ue to high st atic voltages or electr ic
fields. However, precautions must be taken to avoid applications of any voltage higher than maximum rated
voltages to this high-impedance circuit. For proper operation, V
IN
and V
OUT
should be constrained to the range
GND≤(V
IN
or V
OUT
)≤VCC.
Unused inputs must always be tied to an appropriate logic voltage level (e.g., either GND or V
CC
).
Unused outputs must be left open.
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