INTEGRAL IL2931Z-5, IL2931T-5 Datasheet

TRANSISTOR PLANT semiconductor technical data

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IL2931Z-5

IL2931T-5

Chip for low dropout positive voltage regulator IC

Features:

- INPUT-TO-OUTPUT VOLT AGE DIFFERENTIAL OF < 0.6V @ 100mA;

- OUTPUT CURRENT IN EX CESS OF 100 mA;

- LOW BIAS CURRENT;

- 60V LOAD DUMP PROTECTION;

- -50V REVERSE TRANSIENT PROTECTION;

- INTERNAL CURRENT LIMITING WITH THERMAL SHUTDOWN;

IDEALLY SULTED FOR BATTERY POWERED EQUIPMENT

Physical Characteristics:

Wafer Diameter ……100 ± 0.5 mm
Wafer thickness ….. 350 ± 20 µm;
Die size …………….. 2.0 x 1.4 mm2;
Scribe width ………...90 µm

Metallization: Top … Al – 1.4 ± 0.2 µm
bottom... Ti -Ni-Ag
Ti - 0.12 ± 0.02µm
Ni – 0.5 ± 0.1µm
Ag – 0.6 ± 0.1µm

Co-ordinates(bottom left co­ordinates corner), mm

Pad

#

Characteristics

Bond Pad (µm)

Note

X Y

Note

1

output 180 x 180 0.070 0.850

2

GNG 180 x 180 1.085 1.200

3

Input 180 x 180 1.060 1.480

4

Input 180 x 180

- The numbers of
Pads are
simulated

When packing Pads 3

and 4 are to be

interconnected

1.060 1.740

Co-ordinates

are given co­ordinates on

“metallization

layer”

ELECTRICAL CHARACTERISTICS CHIPS ON WAFER

(Vin=14V,Io=10mA,Ci=0.1ìF,Co=100ìF,Tj=25°C, (Note 1).)

Norm

Characteristic Symbol

Min Max

Unit

Output Voltage
Vin=14V, Io=10mA
V

in=

6.0V to 26V, Io≤100mA.

Vo

4.78

4.55

5.23

5.45

V

Line Regulation
Vin=9.0V to 16V
Vin=6.0V to 26V

Reg

line

-

-

9

29

mV

Load Regulat ion (Io=5.0mA to 100mA) Reg

load

- 49 mV

Bias Current
Vin=14V, Io=100mA.
Vin=6.0V to 26V, Io=10mA.

IB

-

-

27

0.9

mA

Dropout Voltage
Io=10mA
Io=100mA

VI-Vo

-

-

0.19

0.58

V

Over-Voltage Shutdown Threshold V

th(OV

) 27 39 V

Output Voltage with Reverse Polarity Input
(Vin=-15V)

-Vo -0.25 - V

Note 1: Low duty cycle pulse techniques are used during test to maintain junction temperature as to ambient as possible.