INFINEON TLE 6286 User Manual

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LIN-Transceiver LDO TLE 6286
Target Data Sheet
1Overview
1.1 Features
• Single-wire transceiver, suitable for LIN protocol
• Transmission rate up to 20 kBaud
• Compatible to LIN specification
• Compatible to ISO 9141 functions
• Very low current consumption in sleep mode
• Control output for voltage regulator
• Short circuit proof to ground and battery
• Overtemperature protection
• Output voltage tolerance ≤ ± 2 %
• 200 mA output current capability
• Low-drop voltage
• Very low standby current consumption
• Overtemperature protection
• Reverse polarity protection
• Short-circuit proof
•Watchdog
• Wide temperature range
• Suitable for use in automotive electronics
P-DSO-16-4
Type Ordering Code Package
TLE 6286 G on request P-DSO-16-4
The TLE 6286 is a single-wire transceiver with a LDO. It is chip by chip integrated circuit in a P-DSO-16-4 package. It works as an interface between the protocol controller and the physical bus. The TLE 6286 is especially suitable to drive the bus line in LIN systems in automotive and industrial applications. Further it can be used in standard ISO9141 systems.
In order to reduce the current consumption the TLE 6286 offers a sleep operation mode. In this mode a voltage regulator can be controlled in order to minimize the current consumption of the whole application. The on-chip voltage regulator is designed for this
Version 1.02 1 2001-10-15
Target Data TLE 6286
application but it is also possible to use an external voltage regulator. A wake-up caused by a message on the bus enables the voltage regulator and sets the RxD output low until the device is switched to normal operation mode.
®
The IC is based on the Smart Power Technology SPT
which allows bipolar and CMOS control circuitry in accordance with DMOS power devices existing on the same monolithic circuit.
The TLE 6286 is designed to withstand the severe conditions of automotive applications.
Version 1.02 2 2001-10-15
1.3 Pin Configuration (top view)
Target Data TLE 6286
GND
RD
V
INHO
RxD
ENLIN
GND
GND
1
2
3
CC
4
5
6
7
89
P-DSO-16-4
116
Leadframe
16
15
14
13
12
11
10
GND
RO
INHIWD
V
BAT
BUS
TxD
V
GND
S
GND
Figure 1 Pinout
RD
WD
V
CC
INHO
RxD
ENLIN
GND
2
Chip:
Voltage
Regulator
4
5
6
7 10
8
Chip:
Transceiver
P-DSO-16-4
15
RO
143
INHI
13
V
BAT
12
BUS
11
TxD
V
S
9
GND
Version 1.02 3 2001-10-15
Target Data TLE 6286
1.4 Pin Definitions and Functions:
Pin No. Symbol Function
1,8,9,16 GND Ground; place to cooling tabs to improve thermal behavior
2RDReset delay; connected to ground with capacitor
3WDWindow Watchdog; rising-edge triggered, for monitoring a
microcontroller
4V
CC
5V Output; connected to GND with 22µF capacitor, ESC<3
5 INHO Inhibit LIN Output; to control a voltage regulator
6RxDReceive Data Output; internal 30k pull up to Vs, LOW in
dominat state
7ENLINEnable LIN Input; integrated 30kpull down, transceiver in
normal operation mode when HIGH
10 V
S
5V Supply Input; VCC input to supply the LIN transceiver
11 TxD Transmit Data Input; internal 30k pull up to Vs, LOW in
dominant state
12 BUS LIN BUS Output/Input; internal 30k pull up to Vs, LOW in
dominant state
13 V
BAT
Battery Supply Input; a reverse current protection diode is required, block GND with 100nF ceramic capacitor and 22µF capacitor
14 INHI Inhibit Voltage Regulator Input; TTL compatible, low active
input
15 RO Reset Output; open collector output connected to the output via
a resistor of 30k
Version 1.02 4 2001-10-15
1.5 Functional Block Diagram
Target Data TLE 6286
V
Bus
BAT
13
12
TLE 6259 G
30 k
5
INHO
10
V
S
Output
Stage
Driver
Mode
Control
30 k
7
ENLIN
Temp.-
Protection
11
TxD
Receiver
6
RxD
5
GND
WD
3
Temperature
Sensor
13
V
BAT
Bandgap
Reference
Adjustment
Figure 2 Block Diagram
Control
Amplifier
INHI
Buffer
Saturation
Control
and
Protection
Circuit
Watchdog
Generator
TLE 4263 G
114
GND
Reset
4
V
CC
2
RD
15
RO
Version 1.02 5 2001-10-15
Target Data TLE 6286
2 Circuit Description
The TLE 6286 is a single-wire transceiver combined with a LDO. It is a chip by chip integrated circuit in a P-DSO-16-4 package. It works as an interface between the protocol controller and the physical bus. The TLE 6286 is especially suitable to drive the bus line in LIN systems in automotive and industrial applications. Further it can be used in standard ISO9141 systems. The on-chip voltage regulator with watchdog is designed for sleep mode applications but it is also possible to use an external voltage regulator.
Start Up
Power Up
Normal Mode
ENLIN
INHO
high high
ENLIN
low
ENLIN (V
CC
high ON)
Sleep Mode
ENLIN
INHO
low floating
1)
after wake-up via bus
2)
ON when INHO not connected to INHI
3)
after start up
Figure 3 Operation Mode State Diagram
V
CC
ON
V
CC
OFF
2)
ENLIN high
Stand-By
INHO
ENLIN
low high
Wake Up t > t
WAKE
RxD
low high
V
CC
1)
ON
3)
2.1 Operation Modes
In order to reduce the current consumption the TLE 6286 offers a sleep operation mode. This mode is selected by switching the enable input EN low (see figure 3, state diagram). In the sleep mode a voltage regulator can be controlled via the INH output in order to minimize the current consumption of the whole application. A wake-up caused by a message on the communication bus automatically enables the voltage regulator by switching the INH output high. In parallel the wake-up is indicated by setting the RxD output low. When entering the normal mode this wake-up flag is reset and the RxD output is released to transmit the bus data.
Version 1.02 6 2001-10-15
Target Data TLE 6286
In case the voltage regulator control input is not connected to INH output or the microcontroller is active respectively, the TLE6286 can be set in normal operation mode without a wake-up via the communication bus.
2.2 LIN Transceiver
The LIN Transceiver has already a pull up resistor of 30kas termination implemented. There is also a diode in this path, to protect the circuit from feedback of voltages from the bus line to the power supply. To configure the TLE 6286 as a master node, an additional external termination resistor of 1k is required. To avoid reverse currents from the bus line into the battery supply line in case of an unpowered node, it is also recommended to place a diode in series to the external pull up. For small systems (low bus capacitance) the EMC performance of the system is supported by an additional capacitor of at least 1nF in the master node (see figure 6, application circuit).
An capacitor of 10µF at the supply voltage input V
buffers the input voltage. In
S
combination with the required reverse polarity diode this prevents the device from detecting power down conditions in case of negative transients on the supply line.
2.3 Voltage Regulator
The control amplifier compares a reference voltage, which is kept highly accurate by resistance adjustment, to a voltage that is proportional to the output voltage and drives the base of the series transistor via a buffer. Saturation control as a function of the load current prevents any over-saturation of the power element. If the externally scaled down output voltage at the reset threshold input drops below 1.35 V, the external reset delay capacitor is discharged by the reset generator. When the voltage of the capacitor
V
reaches the lower threshold until the upper threshold
V
DU
, a reset signal occurs at the reset output and is held
DRL
is exceeded. If the reset threshold input is connected to GND, reset is triggered at an output voltage of typ. 4.65 V. A connected microcontroller will be monitored through the watchdog logic. In case of missing pulses at pin W, the reset output is set to low. The pulse sequence time can be set in a wide range with the reset delay capacitor. The IC can be switched at the TTL-compatible, low-active inhibit input. The IC also incorporates a number of internal circuits for protection against overload, overtemperature, reverse polarity
2.4 Input Capacitor
C
The input capacitor of approx. 1 in series with
is necessary for compensation of line influences. Using a resistor
I
C
, the oscillating circuit consisting of input inductivity and
I
input capacitance can be damped. The output capacitor is necessary for the stability of the regulating circuit. Stability is guaranteed at values 22 µF and an ESR of ≤ 3 Ω within the operating temperature range. For small tolerances of the reset delay the spread of the capacitance of the delay capacitor and its temperature coefficient should be noted.
Version 1.02 7 2001-10-15
Target Data TLE 6286
2.5 Reset Timing
The power-on reset delay time is defined by the charging time of an external capacitor
C
which can be calculated as follows:
D
C
=(trd× I
D
D,ch
)/V
Definitions:CD= delay capacitor
t
= reset delay time
rd
I
= charge current, typical 60 µA
D,ch
V = V
V
DU
, typical 1.70 V
DU
= upper delay switching threshold at CD for reset delay time
2.6 Watchdog Timing
The frequency of the watchdog pulses has to be higher than the minimum pulse sequence which is set by the external reset delay capacitor
C
. Calculation can be done
D
according to the formulas given in Figure 5.
Version 1.02 8 2001-10-15
Target Data TLE 6286
3 Electrical Characteristics
3.1 Absolute Maximum Ratings
Parameter Symbol Limit Values Unit Remarks
min. max.
Voltages
Supply voltage
Battery supply voltage
Bus input voltage
Bus input voltage
V
V
Logic voltages at
V
V
V
EN, TxD, RxD
Input voltages at INH
Output current at INH
Reset output voltage
V
I
V
Reset delay voltage V
Output voltage Vcc
V
INHIBIT voltage V
Watchdog voltage V
Electrostatic discharge
V
voltage at Vs, Bus
CC
S
bus
bus
I
INH
INH
R
D
Q
INH
W
ESD
-0.3 6 V
-0.3 40 V
-20 32 V
-20 40 V t < 1 s
-0.3 V
CC
V0 V <
V
CC
< 5.5 V
+ 0.3
-0.3 V
S
V
+ 0.3
1mA
0.3 42 V
0.3 42 V
0.3 7 V
42 45 V
0.3 6 V
-4 4 kV human body model (100 pF via 1.5 kΩ)
Electrostatic discharge voltage
V
ESD
-2 2 kV human body model (100 pF via 1.5 kΩ)
Temperatures
Junction temperature
Note: Maximum ratings are absolute ratings; exceeding any one of these values may cause
irreversible damage to the integrated circuit.
Version 1.02 9 2001-10-15
T
j
-40 150 °C
Target Data TLE 6286
3.2 Operating Range
Parameter Symbol Limit Values Unit Remarks
min. max.
Supply voltage
Battery Supply Voltage
Junction temperature
V
V
T
CC
S
j
4.5 5.5 V
620V
– 40 150 °C
Thermal Shutdown (junction temperature)
Thermal shutdown temp.
T
Thermal shutdown hyst.
jSD
T 10 K
150 170 190 °C
Thermal Resistances
Junction ambient
R
thj-a
115 K/W
Version 1.02 10 2001-10-15
3.3 Electrical Characteristics
Target Data TLE 6286
4.5 V < VCC<5.5V; 6.0V<VS<20V; RL=1kΩ; VEN> V to ground; positive current flowing into pin; unless otherwise specified.
; -40 °C<Tj<125°C; all voltages with respect
EN,ON
Parameter Symbol Limit Values Unit Remarks
min. typ. max.
Current Consumption
Current consumption
Current consumption I
Current consumption I
Current consumption I
Current consumption I
Current consumption I
I
CC
S
CC
S
S
S
0.5 1.5 mA
0.5 1.0 mA
0.7 2.0 mA
0.7 1.5 mA
20 30 µA
20 40 µA
recessive state; V
= V
TxD
recessive state; V
TxD
dominant state; V
TxD
dominant state; V
TxD
sleep mode;
T
j
sleep mode
= V
= 0 V
= 0 V
=25°C
CC
CC
Receiver Output R×D
HIGH level output current
I
LOW level output current I
Bus receiver
Receiver threshold voltage,
V
recessive to dominant edge
Receiver threshold voltage,
V
dominant to recessive edge
Receiver hysteresis V
wake-up threshold voltage V
Transmission Input T×D
RD,H
RD,L
bus,rd
bus,dr
bus,hys
wake
-0.7 -0.4 mA
0.4 0.7 mA
0.44
V
x
0.02
V
x
0.40
V
x
0.48
V
x
S
S
S
S
0.52
V
x
S
0.04
V
x
S
0.55
V
x
S
0.56
V
x
0.06
V
x
0.70
V
x
V
V
S
mV
S
V
S
VRD = 0.8 x VCC,
VRD = 0.2 x VCC,
-8 V < V
V
bus,rec
V
bus,hys
V
bus,rec
bus
< V
=
- V
< V
< 20 V
bus
bus,dom
bus,dom
HIGH level input voltage
V
threshold
TxD input hysteresis V
TD,H
TD,hys
2.9 0.7 x
V
CC
V
300 600 mV
recessive state
Version 1.02 11 2001-10-15
3.3 Electrical Characteristics (contd)
Target Data TLE 6286
4.5 V < VCC<5.5V; 6.0V<VS<20V; RL=1kΩ; VEN> V to ground; positive current flowing into pin; unless otherwise specified.
; -40 °C<Tj<125°C; all voltages with respect
EN,ON
Parameter Symbol Limit Values Unit Remarks
min. typ. max.
LOW level input voltage threshold
TxD pull up current I
V
TD
TD,L
0.3 x
V
CC
2.1 V
-150 -110 -80 µA
dominant state
V
< 0.3 Vcc
TxD
Bus transmitter
V
Bus recessive output voltage
V
Bus dominant output voltage V
Bus short circuit current I
Leakage current I
bus,rec
bus,dom
bus,sc
bus,lk
0.9 x
V
S
V
S
V
01.5V
40 85 125 mA
-350 -100 µA
520µA
= V
TxD
V
TxD
V
bus,short
VCC=0V, VS=0V, V
bus
VCC=0V, VS=0V, V
bus
CC
= 0 V;
= 13.5 V
= -8 V, Tj<85°C
= 20 V, Tj<85°C
Bus pull up resistance R
Enable input (pin ENLIN)
HIGH level input voltage
V
threshold
LOW level input voltage
V
threshold
EN input hysteresis V
EN pull down resistance
R
Inhibit output (pin INHO)
HIGH level drop voltage
V
INH = VS
V
INH
V
Leakage current I
bus
EN,on
EN,off
EN,hys
EN
INH
INH,lk
20 30 47 k
0.3 x
V
CC
2.8 0.7 x
V
CC
2.2 V
V
300 600 mV
15 30 60 k
0.5 1.0 V
- 5.0 5.0 µA
normal mode
low power mode
I
= - 0.15 mA
INH
sleep mode;
V
= 0 V
INHO
Version 1.02 12 2001-10-15
3.3 Electrical Characteristics (contd)
Target Data TLE 6286
4.5 V < VCC<5.5V; 6.0V<VS<20V; RL=1kΩ; VEN> V to ground; positive current flowing into pin; unless otherwise specified.
; -40 °C<Tj<125°C; all voltages with respect
EN,ON
Parameter Symbol Limit Values Unit Remarks
min. typ. max.
Vcc Output (pin Vcc)
Output voltage
V
Output voltage V
Output current I
Current consumption;
I
= II – I
q
Q
Q
I
q
I
q
I
q
I
q
Drop voltage V
Load regulation V
Line regulation V
Power Supply Ripple
PSRR 54 dB
Rejection
Q
Q
4.90 5.00 5.10 V
4.90 5.00 5.10 V
200 250 mA
– – –
dr
Q,lo
Q.li
0.35 0.50 V
––25 mV
325mV
0
900 10 15
50
1300 18 23
µA
µA
mA mA
5 mA IQ 150 mA; 6 V V
6 V VI 32 V;
I
Q
T
1)
V
I
Q
I
Q
I
Q
IQ = 150 mA
IQ = 5 mA to 150 mA
VI = 6 V to 28 V; I
Q
fr = 100 Hz; Vr =
0.5 V
28 V
I
= 100 mA;
= 100 °C
j
= 0
INH
= 0 mA = 150 mA = 150 mA; VI = 4.5 V
= 150 mA
PP
1)
Reset Genarator (pin RD)
Switching threshold
Reset adjust threshold
Reset low voltage V
Saturation voltage V
Upper timing threshold V
Lower reset timing threshold V
Charge current I
Reset delay time t
Reset reaction time t
V
Q,rt
V
RADJ,th
RO,l
D,sat
DU
DRL
D,ch
rd
rr
Version 1.02 13 2001-10-15
4.5 4.65 4.8 V
1.26 1.35 1.44 V
0.10 0.40 V
50 100 mV
1.45 1.70 2.05 V
0.20 0.35 0.55 V
40 60 85 µA
1.3 2.8 4.1 ms
0.5 1.2 4 µs
VQ > 3.5 V
IRO = 1 mA
VQ < V
R,th
CD = 100 nF
CD = 100 nF
3.3 Electrical Characteristics (contd)
Target Data TLE 6286
4.5 V < VCC<5.5V; 6.0V<VS<20V; RL=1kΩ; VEN> V to ground; positive current flowing into pin; unless otherwise specified.
; -40 °C<Tj< 125 °C; all voltages with respect
EN,ON
Parameter Symbol Limit Values Unit Remarks
min. typ. max.
Watchdog (pin WD)
Discharge current
I
Upper timing threshold V
Lower timing threshold V
Watchdog trigger time T
D,wd
DU
DWL
WI,tr
4.40 6.25 9.10 µA
1.45 1.70 2.05 V
0.20 0.35 0.55 V
16 22.5 27 ms
VD = 1.0 V
CD = 100 nF
Inhibit Input (INHI)
Switching voltage
V
Turn-OFF voltage V
Input current I
Note: The reset output is low within the range V
1)
Drop voltage = Vi – VQ (measured when the output voltage has dropped 100 mV from the nominal value obtained at 6 V input)
= 1 V to V
Q
Q,rt
INH,ON
INH,OFF
INH
3.6 ––V
––0.8 V
51025µA
IC turned on
IC turned off
V
= 5 V
INH
Version 1.02 14 2001-10-15
3.3 Electrical Characteristics (contd)
Target Data TLE 6286
4.5 V < VCC<5.5V; 6.0V<VS<20V; RL=1kΩ; VEN> V to ground; positive current flowing into pin; unless otherwise specified.
; -40 °C<Tj<125°C; all voltages with respect
EN,ON
Parameter Symbol Limit Values Unit Remarks
min. typ. max.
Dynamic Transceiver Characteristics
falling edge slew rate
rising edge slew rate S
Propagation delay TxD-to-RxD LOW (recessive to dominant)
Propagation delay TxD-to-RxD HIGH (dominant to recessive)
S
bus(L)
bus(H)
t
d(L),TR
t
d(H),TR
-3 -2.0 -1 V/µs
1 1.5 3 V/µs
251s
251s
80% > V
C
bus
T
ambient
V
CC
20% < V
C
bus
V
CC
C
bus
V
CC
C
RxD
C
bus
V
CC
C
RxD
bus
= 3.3 nF;
<85°C;
= 5 V; VS = 13.5 V
bus
= 3.3 nF;
= 5 V; VS = 13.5 V
= 3.3nF;
= 5 V; VS = 13.5 V
= 20 pF
= 3.3 nF;
= 5 V; VS = 13.5 V
= 20 nF
> 20%
< 80%
Propagation delay TxD LOW to bus
Propagation delay TxD HIGH to bus
Propagation delay bus dominant to RxD LOW
Propagation delay bus recessive to RxD HIGH
Receiver delay symmetry t
Transmitter delay symmetry t
Wake-up delay time t
t
d(L),T
t
d(H),T
t
d(L),R
t
d(H),R
sym,R
sym,T
wake
14µs
14µs
14µs
14µs
-2 2 µs
-2 2 µs
30 100 200 µs
VCC = 5 V
VCC = 5 V
VCC = 5V;
C
= 20pF
RxD
VCC = 5 V;
C
= 20 pF
RxD
t
= t
sym,R
t
sym,T
= t
d(L),R
d(L),T
- t
- t
d(H),R
d(H),T
Version 1.02 15 2001-10-15
4 Diagrams
V
I
V
Q
V
Q, rt
V
D
V
DU
V
DRL
t t
rd
V
RO
Target Data TLE 6286
<
t
rr
V
d
=
t
d
rr
I
D, ch
C
t
t
D
t
Power-ON
Figure 4
V
DU
V
DWL
Reset
Over-
temperature
Voltage Drop
at Input
Under-
Secondary
voltage Spike
Load
Bounce
Time Response, Watchdog with High-Frequency Clock
V
W
V
Ι
V
Q
V
D
V
RO
T
WD, p
t
WD, L
T
WI, tr
t
AET03066
t
t
t
t
T =
WI, tr
VV(
DU-DWL
Ι
D, wd
VDU-V
)
T
C
D
()
=
WD, p
DWL
Ι
D, wc
Ι
(
D, wc+D, wd
Ι
x
D, wd
)
Ι
t =
CD;;
WD, L
Ι
VV(DU-
DWL
D, wc
)
C
D
AED03099
t
Figure 5 Timing of the Watchdog FunctionReset
Version 1.02 16 2001-10-15
5 Application
Target Data TLE 6286
V
bat
LIN bus
master node
22 µF
1 k
C
D
100 nF
W
13
12
14
100 nF
5
2
V
BAT
Bus
INHO
INHI
RD
ENLIN
TLE 6286 G
GND
1,8,9, 16
WD
RO
RxD
TxD
V
3
15
7
6
11
V
10
S
100 nF
5V
4
CC
100 nF
µP
GND
22 µF
ECU 1
slave node
22 µF
C
D
Figure 6 Application Circuit
100 nF
100 nF
13
12
5
14
INHI
RD
2
V
BAT
Bus
INHO
TLE 6286 G
GND
ENLIN
RxD
1,8,9, 16
WD
RO
TxD
V
V
3
15
7
6
11
10
S
100 nF
5V
4
CC
100 nF
µP
GND
22 µF
ECU X
Version 1.02 17 2001-10-15
6 Package Outlines
P-DSO-16-4
(Plastic Dual Small Outline Package)
Pictures of the housing will be added in near future!
Target Data TLE 6286
Sorts of Packing
Package outlines for tubes, trays etc. are contained in our Data Book Package Information”.
SMD = Surface Mounted Device
Dimensions in mm
Version 1.02 18 2001-10-15
Target Data TLE 6286
Edition 1999-10-12
Published by Infineon Technologies AG St.-Martin-Strasse 53 D-81541 München
© Infineon Technologies AG1999
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as warranted characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Representatives worldwide (see address list).
Warnings
Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-suppor t devices or systems with the express written approval of Infineon Tech­nologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life suppor t devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Version 1.02 19 2001-10-15
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