This application diagram shows the principle schematics of a typical injector / valve drive. Other
configurations are possible as well. Freewheeling diodes are not considered. The 10 m resistor
is not needed by the Driver IC, but may be needed for load current measurement. The voltage
devider networks, e.g. R = 10 k, across the two Low Side MOSFETs are an example as well;
they allow to increas the current limit threshold for Short Circuit protection SCD for the Low Side
MOSFETs. As they pull down the Sources of the High Side MOSFETs (while the Low Side MOSFETs are off), they allow to pre-charge the C
capacitors during start-up (before the Driver IC
Bx
gets enabled). The SCD current limit threshold can be increased for the High Side MOSFETs as
well by using voltage devider networks across the High Side MOSFETs. SCD can also be disabled (High Side and / or Low Side MOSFETs).
2 Rev 2.2 2006-03-07
Data Sheet TLE6282G
DT/DIS
ERR
IH1
IL1
IH2
VS
DL2
DL1
Symbol Function
Pin
1 DT/DIS a) Set adjustable dead time by external resistor
2 ERR Error flag for driver shut down
3 IH1 Control input for high side switch 1
4 IL1 Control input for low side switch 1
5 IH2 Control input for high side switch 2
6 IL2 Control input for low side switch 1
7 GND Ground
8 VS Voltage supply
9 DL2 Sense contact for short circuit detection low side 2
10 DL1 Sense contact for short circuit detection low side 1
11 GL1 Output to gate low side switch 1
12 SH1 Connection to source high side switch 1
13 GH1 Output to gate high side switch 1
14 BH1 Bootstrap supply high side switch 1
15 DH1 Sense contacts for short circuit detection high side 1
16 DH2 Sense contacts for short circuit detection high side 2
17 BH2 Bootstrap supply high side switch 2
18 GH2 Output to gate high side switch 2
19 SH2 Connection to source high side switch 2
20 GL2 Output to gate low side switch 2
1
1
2
2
3
3
4
4
5
5
TLE6282G
6
6
7
7
8
8
9
9
10
10
b) Deactivate deadtime and shoot through protection
c) Reset ERR register
d) Disable output stages
20
20
19
19
18
18
17
17
16
16
15
15
14
14
13
13
12
12
11
11
by connecting to 0V
GL2
SH2
GH2
BH2
DH2
DH1 IL2
BH1 GND
GH1
SH1
GL1
3 Rev 2.2 2006-03-07
Data Sheet TLE6282G
Maximum Ratings at Tj=-40…+150°C unless specified otherwise
Parameter Symbol Limits ValuesUnit
Supply voltage 1 VS -4 60V
Operating temperature range
Storage temperature range
Max. voltage range at Ixx; DT/DIS -1 6V
Max. voltage range at ERR -0.3 6V
Max. voltage range at BHx VBHx -0.3 90V
Max. voltage range at DHx2 VDHx-4 75V
Max. voltage range at GHx3 VGHx-7 86V
Max. voltage range at SHx
3
VSHx-7 75V
Max. voltage range at DLx VDLx -7 75V
Max. voltage range at GLx VGLx -2 12V
Max. voltage difference BHx - SHx VBHx-VSHx -0.3 17V
Max. voltage difference GHx – SHx; GLx VGxx-VSxx -0.3 11V
Power dissipation (DC) @ TA=125°C / min.footprint P
Power dissipation (DC) @ TA=85°C / min.footprint P
Electrostatic discharge voltage (Human Body Model)
according to MIL STD 883D, method 3015.7 and
EOS/ESD assn. standard S5.1 – 1993
Jedec Level 3
Thermal resistance junction - ambient (minimal footprint with thermal vias)
Thermal resistance junction - ambient (6 cm2) R
Functional range
Tj
T
stg
0.33W
tot
0.85W
tot
4
V
ESD
R
75K/W
thJA
75K/W
thJA
-40
-55
150
150
2kV
°C
Parameter and Conditions Symbol Values Unit
at Tj = –40…+150 °C, unless otherwise specified
Supply voltage VS 7.5 60V
Operating temperature range Tj -40 150°C
Max. voltage range at Ixx, DT/DIS -0.3 5.5V
Max. voltage range at ERR -0.3 5.5V
Max. voltage range at BHx VBHx -0.3 90V
Max. voltage range at DHx2 VDHx-4 75V
Max. voltage range at GHx3 VGHx-7 86V
Max. voltage range at SHx3 VSHx-7 75V
1
With external resistor (≥10 Ω ) and capacitor
2
The min value -4V is increased to –( V
3
The min value -7V is reduced to –(V
4
All test involving Gxx pins V
ESD
=1 kV!
4 Rev 2.2 2006-03-07
- V
BHx
BHx-VSHx
) in case of bootstrap voltages <4V
SHx
-1V) in case of bootstrap voltages <8V
Data Sheet TLE6282G
Max. voltage range at DLx3 VDLx-7 75 V
Max. voltage range at GLx VGLx -2 12V
Max. voltage difference BHx - SHx VBHx-VSHx -0.3 12V
Max. voltage difference GHx – SHx; GLx VGxx-VSxx -0.3 11V
PWM frequency FPWM 0 50kHz
Minimum on time external lowside switch – static con-
dition @ 20 kHz; Q
= 200nC
Gate
Electrical Characteristics
Parameter and Conditions Symbol Values Unit
at Tj = –40…+150 °C, unless otherwise specified
and supply voltage range V
Static Characteristics
S = 7.5 ... 60V; f
= 20kHz
PWM
tp(min) 2µs
min typ max
Low level output voltage (VGSxx) @ I=10mA
High level output voltage (VGSxx) @ I=-10mA;
∆
VLL-- 60 150mV
∆
VHL 8 10 11V
Vs>12V
Supply current at VS(device disabled)
@ V
= VS =14V R
bat
=400kΩ
DT
Supply current at VS(device disabled)
@ V
Supply current at V
= VS =42V R
bat
=400kΩ
DT
@ V
S
= VS =14V 20kHz (Out-
bat
IVS(dis)14V-- 4 8mA
IVS(dis)42V-- 4 8mA
I
VS(open)14V
-- 7 15mA
puts open)
Supply current at V
@ V
S
= VS =14V 50kHz (Out-
bat
I
VS(open)14V
-- 7 15mA
puts open)
Supply current at V
@ V
S
= VS =42V 20kHz (Out-
bat
I
VS(open)42V
-- 7 15mA
puts open)
Low level input voltage VIN(LL) -- -- 1.0V
High level input voltage VIN(HL)2.0 -- --V
Input hysteresis
∆
VIN 100 170 mV
5 Rev 2.2 2006-03-07
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