INFINEON TLE6282G User Manual

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Data Sheet TLE6282G
Dual Half Bridge Driver IC
Features
level input N-Channel MOSFETs
Separate input for each MOSFET
PWM frequency up to 50 kHz
Operates down to 7.5V
supply voltage
Low EMC sensitivity and emission
Adjustable dead time with shoot through protection
Deactivation of dead time and shoot through protection possible
Short circuit protection for each Mosfet
Driver undervoltage shut down
Reverse polarity protection for the driver IC
Disable function
Input with TTL characteristics
1 bit diagnosis
Integrated bootstrap diodes
Product Summary Turn on current I Turn off current I Supply voltage range V
Gxx(on)
Gxx(off)
Vs
850 mA 580 mA
7.5 … 60 V Gate Voltage VGS 10 V Temperature range T
J
-40...+150 °C
P-DSO 20
Application
Dedicated for DC-brush high current motor bridges in PWM control mode and adapted for use in injector and
valve applications for 12, 24 and 42V powernet applications. Useable as four fold lowside driver for unipolar 4 phase motor drives.
The two half bridges can operate independently. The two half bridges can even operate at different supply
voltages.
General Description
Dual half bridge driver IC for MOSFET power stages with multiple protection functions.
Block Diagram
Charge Pump
Undervoltage HSx
OR
Undervoltage LSx
Short Circuit Detection
Level
Shift
Floating HS Driver 1
+
limitation HS1
V
GS
+ Short circuit detect.
+ Undervoltage
Floating HS Driver 2
+
limitation HS2
V
GS
+ Short circuit detect.
+ Undervoltage
Floating LS Driver 1
+
limitation LS1
V
GS
+ Short circuit detect.
+ Undervoltage
Floating LS Driver 2
+
limitation LS2
V
GS
+ Short circuit detect.
+ Undervoltage
V
S
GND
IH1
IL1
IH2
IL2
DT/DIS
ERR
Linear
Regulator
INH
HS1
Input control
Dead time
Undervoltage
Short circuit Detect.
LS1
HS2
LS2
BH1
BH2
DH1
GH1
SCD
SH1
DH2
GH2
SCD
SH2
DL1
GL1
SCD
DL2
GL2
SCD
1 Rev 2.2 2006-03-07
Data Sheet TLE6282G
Application Block Diagram – Injector / Valve Drive
Watchdog
I
R 10
C
S
47µF
C
S
1µF
VS=12V
R
47 k
Reset
Q
C
Q
22µF
Q
TLE
4278G
D
C
D
47nF
WD R V
µC
CC
R
47 k
VS
ER1
Q
DT/ DIS
IH1
IL1
IH2
IL2
BH1
DH1
GH1
SH1
BH2
DH2
GH2
SH2
DL1
GL1
DL2
GL2
C
B
220nF
Load 1
C
B
220nF
Load 2
GND
This application diagram shows the principle schematics of a typical injector / valve drive. Other configurations are possible as well. Freewheeling diodes are not considered. The 10 m resistor is not needed by the Driver IC, but may be needed for load current measurement. The voltage devider networks, e.g. R = 10 k, across the two Low Side MOSFETs are an example as well; they allow to increas the current limit threshold for Short Circuit protection SCD for the Low Side MOSFETs. As they pull down the Sources of the High Side MOSFETs (while the Low Side MOS­FETs are off), they allow to pre-charge the C
capacitors during start-up (before the Driver IC
Bx
gets enabled). The SCD current limit threshold can be increased for the High Side MOSFETs as well by using voltage devider networks across the High Side MOSFETs. SCD can also be dis­abled (High Side and / or Low Side MOSFETs).
2 Rev 2.2 2006-03-07
Data Sheet TLE6282G
DT/DIS
ERR
IH1
IL1
IH2
VS
DL2
DL1
Symbol Function
Pin
1 DT/DIS a) Set adjustable dead time by external resistor
2 ERR Error flag for driver shut down
3 IH1 Control input for high side switch 1
4 IL1 Control input for low side switch 1
5 IH2 Control input for high side switch 2
6 IL2 Control input for low side switch 1
7 GND Ground
8 VS Voltage supply
9 DL2 Sense contact for short circuit detection low side 2
10 DL1 Sense contact for short circuit detection low side 1
11 GL1 Output to gate low side switch 1
12 SH1 Connection to source high side switch 1
13 GH1 Output to gate high side switch 1
14 BH1 Bootstrap supply high side switch 1
15 DH1 Sense contacts for short circuit detection high side 1
16 DH2 Sense contacts for short circuit detection high side 2
17 BH2 Bootstrap supply high side switch 2
18 GH2 Output to gate high side switch 2
19 SH2 Connection to source high side switch 2
20 GL2 Output to gate low side switch 2
1
1
2
2
3
3
4
4
5
5
TLE6282G
6
6
7
7
8
8
9
9
10
10
b) Deactivate deadtime and shoot through protection
c) Reset ERR register
d) Disable output stages
20
20
19
19
18
18
17
17
16
16
15
15
14
14
13
13
12
12
11
11
by connecting to 0V
GL2
SH2
GH2
BH2
DH2
DH1 IL2
BH1 GND
GH1
SH1
GL1
3 Rev 2.2 2006-03-07
Data Sheet TLE6282G
Maximum Ratings at Tj=-40…+150°C unless specified otherwise
Parameter Symbol Limits Values Unit
Supply voltage 1 VS -4 60 V Operating temperature range Storage temperature range
Max. voltage range at Ixx; DT/DIS -1 6V
Max. voltage range at ERR -0.3 6 V Max. voltage range at BHx VBHx -0.3 90 V Max. voltage range at DHx2 VDHx -4 75 V Max. voltage range at GHx3 VGHx -7 86 V Max. voltage range at SHx
3
VSHx -7 75 V
Max. voltage range at DLx VDLx -7 75 V Max. voltage range at GLx VGLx -2 12 V
Max. voltage difference BHx - SHx VBHx-VSHx -0.3 17 V Max. voltage difference GHx – SHx; GLx VGxx-VSxx -0.3 11 V
Power dissipation (DC) @ TA=125°C / min.footprint P Power dissipation (DC) @ TA=85°C / min.footprint P Electrostatic discharge voltage (Human Body Model) according to MIL STD 883D, method 3015.7 and
EOS/ESD assn. standard S5.1 – 1993 Jedec Level 3
Thermal resistance junction - ambient (minimal foot­print with thermal vias)
Thermal resistance junction - ambient (6 cm2) R
Functional range
Tj T
stg
0.33 W
tot
0.85 W
tot
4
V
ESD
R
75 K/W
thJA
75 K/W
thJA
-40
-55
150 150
2kV
°C
Parameter and Conditions Symbol Values Unit
at Tj = –40…+150 °C, unless otherwise specified
Supply voltage VS 7.5 60 V Operating temperature range Tj -40 150 °C Max. voltage range at Ixx, DT/DIS -0.3 5.5 V Max. voltage range at ERR -0.3 5.5 V Max. voltage range at BHx VBHx -0.3 90 V Max. voltage range at DHx2 VDHx -4 75 V Max. voltage range at GHx3 VGHx -7 86 V Max. voltage range at SHx3 VSHx -7 75 V
1
With external resistor (10 ) and capacitor
2
The min value -4V is increased to –( V
3
The min value -7V is reduced to –(V
4
All test involving Gxx pins V
ESD
=1 kV!
4 Rev 2.2 2006-03-07
- V
BHx
BHx-VSHx
) in case of bootstrap voltages <4V
SHx
-1V) in case of bootstrap voltages <8V
Data Sheet TLE6282G
Max. voltage range at DLx3 VDLx -7 75 V Max. voltage range at GLx VGLx -2 12 V Max. voltage difference BHx - SHx VBHx-VSHx -0.3 12 V Max. voltage difference GHx – SHx; GLx VGxx-VSxx -0.3 11 V PWM frequency FPWM 0 50 kHz Minimum on time external lowside switch – static con-
dition @ 20 kHz; Q
= 200nC
Gate
Electrical Characteristics
Parameter and Conditions Symbol Values Unit
at Tj = –40…+150 °C, unless otherwise specified and supply voltage range V
Static Characteristics
S = 7.5 ... 60V; f
= 20kHz
PWM
tp(min) s
min typ max
Low level output voltage (VGSxx) @ I=10mA
High level output voltage (VGSxx) @ I=-10mA;
VLL -- 60 150 mV
VHL 8 10 11 V
Vs>12V
Supply current at VS (device disabled) @ V
= VS =14V R
bat
=400k
DT
Supply current at VS (device disabled) @ V Supply current at V
= VS =42V R
bat
=400k
DT
@ V
S
= VS =14V 20kHz (Out-
bat
IVS(dis)14V -- 4 8 mA
IVS(dis)42V -- 4 8 mA
I
VS(open)14V
-- 7 15 mA
puts open) Supply current at V
@ V
S
= VS =14V 50kHz (Out-
bat
I
VS(open)14V
-- 7 15 mA
puts open) Supply current at V
@ V
S
= VS =42V 20kHz (Out-
bat
I
VS(open)42V
-- 7 15 mA
puts open) Low level input voltage VIN(LL) -- -- 1.0 V High level input voltage VIN(HL) 2.0 -- -- V Input hysteresis
VIN 100 170 mV
5 Rev 2.2 2006-03-07
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