INFINEON TLE6280GP User Manual

现货库存、技术资料、百科信息、热点资讯，精彩尽在鼎好!

Datasheet TLE6280GP

3-Phase Bridge Driver IC

Features

•

Compatible to very low ohmic normal

level input N-Channel Mosfets

•

Separate input for each MOSFET

•

PWM frequency up to 30kHz

•

Fulfills specification down to 9V

supply voltage

•

Low EMC sensitivity and emission

•

Separate Source connection for each MOSFET

•

Adjustable dead time

•

Adjustable dI/dt limitation

•

Short circuit protection with adjustable current limitation

•

Driver undervoltage warning

•

Reverse polarity protection

•

Disable function

•

Input with TTL characteristics

•

Error flag

•

Thermal overload warning for driver IC

•

Shoot through protection

•

Shoot through option

•

Integrated bootstrap diodes

Product Summary Turn on current I Turn off current I Supply voltage range V Gate Voltage VGS 10 V Temperature range T

0.9 A

Oxx(on)

0.85 A

Oxx(off)

8...20 V

-40...+150 °C

P-DSO36-12

Ordering Code

Q67007-A9406

Application

•

Dedicated for 3-phase high current motor bridges in PWM control mode. This device fulfills requirements in

12V automotive applications

General Description

3-phase bridge driver IC for MOSFET power stages with multiple protection functions.

Block Diagram

BH1 GH1 SH1 BL1 GL1 SL1

HS Driver 1 LS Driver 1

HS Driver (Channel 2)

- Short Circuit Protection

- Undervoltage Detection

DI/dt Control

LS Driver (Channel 2)

- Short Circuit Protection

- Undervoltage Detection

DI/dt Control

BH2

GH2

BL2 SH2

GL2

ILx IHx

MFP DT

ERR

Reverse Polarity

Protection

Input Logic

- Shoot Through Protection

- Shoot Through Option

- Charge Pump Control

- Programmable Dead Time

Error Logic

- Short Circuit Shut Down

- Under Voltage Warning

- Over Temperature Warning

Voltage Regulator

Charge Pump

VDH

DIDT GND

SL2

DI/dt Limitation

HS Driver 3 LS Driver 3

BH3 GH3 SH3 BL3 GL3 SL3

1 2004-03-31

Datasheet TLE6280GP

Application Block Diagram

VS=12V

V5=5V

50 k

Ω

DI/DT

12nF

1µF

Ω

DI/DT

100

Ω

DI/DT

VDH

P-GND

C 1000µF

ERR

20 k

Ω

MFP

82 k

Ω

BH1

GH1 SH1

BH2

GH2

SH2

BH3

BH1

220nF

BH2

220nF

BH3

220nF

TLE6280GP

GH3

IL1 IH1

µC

1.5µF

50 k

Ω

IL2 IH2

IL3 IH3

SH3 BL1

GL1 SL1

BL2 GL2

SL2 BH3

GL3

SL3

BL1

220nF

BL2

220nF

BL3

220nF

GND

P-GND

Fig. 1 : Application circuit

Remark: This application diagram is one possible implementation of this driver IC. There is, e.g., the possibility to link all three BLx pins and use only one capacitor.

2 2004-03-31

Datasheet TLE6280GP

Symbol Function

1;18;19:36 GND Logic Ground

8 VS Voltage supply 20 21

9 11 13 10 12 14 15 MFP Multi function pin:

17 DT Program pin for dead time 35 DIDT Program pin dI/dt limitation 34 VDH Sense pin for drain voltage of the high-side Mosfets 16 ERR Error flag for driver supply under voltage, over-

2 28

31 25

29 23

32 26

30 24

33 27

CL CH IH1 IH2 IH3 IL1 IL2 IL3

BH1 BH2 BH3

BL1 BL2

BL3 GH1 GH2 GH3 GL1 GL2 GL3 SH1 SH2 SH3

SL1

SL2

SL3

Charge pump - capacitor

Control inputs for high-side switches 1 to 3 (low active)

Control inputs for low-side switches 1 to 3 (high active)

a) Disable the complete device by V

MFP

<1V

b) Program pin for output voltage level under short

circuit condition (V

Gxx –VSxx

= 2xV

c) Enable shoot through option by V

MFP

)

>4.5V

temperature and short circuit (open drain output) Bootstrap supply high-side switches 1 to 3

Backup capacitor connection low switches 1 to 3

Output to gate high-side switches 1 to 3

Output to gate low-side switches 1 to 3

Connection to source high-side switches 1 to 3

Connection to source low-side switches 1 to 3

3 2004-03-31

Datasheet TLE6280GP

Functional description

General

In the automotive sector there are more and more applications requiring high performance motor drives, such as electro-hydraulic or electric power steering. In these applications 3-phase motors, synchronous and asynchronous, are used, combining high output performance, low space requirements and high reliability. The TLE6280GP is a driver IC dedicated to control the 6 to 12 external Mosfets forming the converter for high current 3 phase motor drives in the automotive sector. It incorporates features like short circuit detection, diagnosis and high output performance and combines it with typical automotive specific requirements like full functionality even at low battery voltages. Its 3 high-side and 3 low-side output stages are powerful enough to drive Mosfets with 250nC gate charge with approx. 300ns fall and rise times. Typical applications are cooling fan, water pump, electro-hydraulic and electric power steering. The TLE6280GP is designed for a 12V power net. Use in 24V application is possible as well. Limiting factor could be the power dissipation. This datasheet describes all functionality of this device. Additional application tips are given in an application note available on the Internet.

Output stages The 3 low-side and 3 high-side powerful push-pull output stages are all floating blocks, each

with its own Source pin. This allows the direct connection of the output stage to the Source of each single Mosfet, allowing a perfect control of each Gate-Source voltage even when 200A are driven in the bridge with rise and fall times clearly below 1µs. All 6 output stages have the same output power and, due to the use of the bootstrap principle, they can be switched all up to 30kHz. Its output stages are powerful enough to drive Mosfets with 250nC gate charge with approx. 300ns fall and rise times, or even to run 12 such Mosfets with fall and rise times of approx. 600ns. Maximum allowed power dissipation and the need to refresh the bootstrap capacitors with a minimum refresh pulse limit the divice use for higher frequencies. Fig. 2 shows the supply structure of TLE6280GP. The bootstrap capacitors are charged by the charge pump capacitor C The exact value for this minimum refresh pulse is given by the RC time constant formed by the impedance between the CH pin and Bxx pin, and the capacitor formed by the external Mosfet (C

Mosfet=QGate-total

/ VGS). The size of the bootstrap capacitor has to be adapted to the external Mosfet that the driver IC has to drive. Usually the bootstrap capacitor is about 10-20 times bigger than C

. External components, such as R-C networks, at the Vs Pin have to

Mosfet

be considered, too.

Operation at Vs<12V – integrated charge pump

The TLE6280GP provides a feature tailored to the requirements of 12V automotive applications. Often the operation of an application has to be assured even at 9V-supply voltage or lower. Normally bridge driver ICs provide in such conditions clearly less than 9V to the Gate of the external Mosfet, increasing its RDSon and associated the power dissipation. The supply structure of the device is shown in fig.2. The TLE 6280GP has a built-in voltage regulator with charge pump control to generate an internal supply voltage of 13V within a supply voltage range of 8-40V. Operation below 8V is possible as well and will result in a reduced Gate voltage. The charge pump works with an external capacitor C tween the CL and CH pins. It provides more than 13V at the CH pin and guarantees high supply voltage for the bootstrap capacitors C The Input Low-side pins ILx (see Fig. 3) trigger the charge pump. As soon as the first external low-side Mosfet is switched on and the corresponding bootstrap capacitor is connected to GND, the CCP is pushed to high and provides about 13V at the CH pin. CCP can now di-

via the CH pin and diodes.

connected be-

4 2004-03-31

from battery

Datasheet TLE6280GP

Vreg1 13V +13 ... +8V

BH1

Phase A

Phase C

Phase B

BL1

= Pin

Bold

line = external component

Triggered

by ILx

Vreg3 =

Vreg1-8V

Vreg2=6V

Fig. 2: Supply structure with external components (compare to Fig. 1)

rectly feed the low-side output stages and recharge the bootstrap capacitors connected to GND. As soon as the first of the 3 external low-side Mosfets is switched off, the CCP will be pulled down to be re-charged. This synchronous operation with the output stages has the benefit that the electromagnetic emissions generated by the charge pump can be filtered by the same filter necessary to filter the EME of the converter itself. At the same time it is assured that the high voltage at the CH pin is available just in time to charge the high-side bootstrap.

! Timing of charge pump - Examples

IL1

IL2

IL3

1. ILx high 1. ILx low

IL1

IL2

IL3

1. ILx high

1. ILx low

Charge of bootstrap capacitors

Charge of charge pump capacitor

Charge of bootstrap capacitors

Charge of charge pump capacitor

Fig. 3: Trigger timing of charge pump caused by changing input signals

5 2004-03-31

Datasheet TLE6280GP

The size of the C (See “output stages”). CCP is usually 6 times larger then C

and CCP capacitors depends upon the gate charge of the Mosfet.

Bxx

Dead Time and Shoot through option. In bridge applications it has to be assured that the external high-side and low-side Mosfets

are not “on” at the same time, such that the battery voltage is directly connected to GND. This is usually assured by the integration of delays in a driver IC, generating a so-called dead time between switching off the external Mosfet and switching on the other Mosfet of the same half-bridge. The dead times generated in the TLE6280GP are adjustable. The dead time generated by the TLE6280GP can be varied from 100ns to 4µs by connecting an external resistor from the DT pin to GND. The dead time has to be long enough to avoid a short between battery and GND, while the dead time should be as short as possible to reduce extra power dissipation in the external Mosfets. In addition to this adjustable delay, the TLE6280GP provides a locking mechanism, preventing both external Mosfets of one half-bridge from being switched on at the same time. This functionality is called shoot through protection. If the command to switch on both high and low-side switches in the same half-bridge is given at the input pins, the command will be ignored. (See dead time diagrams, fig. 6-8) This shoot through protection can be deactivated by setting the MFP-pin to 5V.

Short circuit protection / current limitation The TLE6280GP provides a short circuit protection for the external Mosfets, by monitoring

the Drain-Source voltage of the external Mosfets. As soon as this voltage is higher than the short circuit detection limit, the Gate-Source voltage of this Mosfet will be limited to twice the voltage at the MFP-Pin, providing a current limitation. The short circuit detection level is dependent upon the voltage of the MFP pin as well (see diagrams). After a delay of about 11µs all external Mosfets will be switched off until the driver is reset by the MFP pin. The error flag is set. The Drain-Source voltage monitoring of the short circuit detection for certain external Mosfets is active as soon as the corresponding input is set to “on” and the dead time is expired. This feature provides a 2-step switch-on behavior for each regular switching-on of a Mosfet.

Description of MFP pin (Multi functional pin) The MFP pin has multiple tasks:

1) Reset the device.

2) Adjust the short circuit detection level of the external Mosfet and define the gate voltage

limitation for current limitation in case of short circuit

3) Deactivate the shoot-through protection Fig 4. shows the internal structure of the MFP pin. Condition of MFP pin Function

0 – 1.1V Disable the driver. All external Mosfets will be actively

switched off

2.5 – 4.0 V Adjustable short circuit detection level combined with adjust-

able gate voltage limitation for current limitation. Shootthrough protection is active.

> 4.5V Shoot-through protection deactivated.

6 2004-03-31

Datasheet TLE6280GP

ILx

NAND

IHx

4.5V

MFP

Vmfp x 2

1.45 /

1.7V

Fig. 4: Block diagram of internal structure of MFP pin

80ns

Levelshifter

Shoot

Through

Gate

control

Dissable

Reset

Shoot through protection / option As already mentioned, the device has a built-in shoot-through protection, to avoid a simulta-

neous activation of high- and low-side switch in one half-bridge. In case there is a short circuit in the bridge, the driver will switch off all external Mosfets. If there is still current flowing in the motor, it is possible for the user to override this shoot through protection. By setting the ILx to “high”, the IHx to “low” and MFP to a level above 4.5V, all external Mosfets will be turned on simultaneously to blow a well-dimensioned fuse. The application will be finally disconnected in this way from battery, and thus guarantee that the motor does not apply any uncontrolled torque.

Undervoltage warning: If the voltage of a bootstrap capacitor C

reaches the undervoltage warning level the error

Bxx

flag is set and will remain set until the voltage of the bootstrap capacitor has recovered. The error signal can be seen as awarning that an undervoltage shut-down could occur soon, and the user can take appropriate measures to avoid this. Such measures could be the change of the duty cycle to a range of 10-90% or the ramp down of the motor.

Undervoltage shut down: The TLE6280GP has an integrated undervoltage shut-down, to guarantee that the behavior

of the device is predictable in all voltage ranges. If the voltage of a bootstrap capacitor C

reaches the undervoltage shut-down level, the

Bxx

Gate-Source voltage of the affected external Mosfet will be actively pulled to low. In this situation the short circuit detection of this output stage is deactivated to avoid a complete shut down of the driver. This allows continued operation of the motor in case of undervoltage shut-down for a short period of time.

7 2004-03-31

Datasheet TLE6280GP

As soon as the bootstrap voltage recovers, the output stage condition will be aligned to the input patterns by the next changing input signal at the corresponding input pin.

Diagnosis The ERR pin is an open collector output and has to be pulled up with external pull-up resis-

tors to 5V. In normal conditions the ERR signal is high. In case of an error the ERR pin is pulled down. There are 3 different causes for an error signal:

1) Short circuit of an external Mosfet – all external Mosfets are switched off. The driver has

to be reset to start again.

2) Undervoltage warning: at least one of the external capacitors connected to Bxx pins has

a voltage below the warning level.

3) Over-temperature warning: The device works normally but is out of the maximum ratings.

Immediate actions have to be taken to reduce the thermal load. The error flag will be removed when the driver reached temperatures below the over temperature warning level.

Temperature

Sensor

ERR

I undervoltage

τ approx. 1µs

Iscp (VMFP)

3.3µA

0.3µA

Fig. 5: Block diagram of ERR functionality

10pF

dI/dt control In all high current PWM applications, transient overvoltages and electro-magnetic emmisions

are critical items. The dI/dt regulation of the TLE6280GP helps to reduce transient overvoltage as well as electro-magnetic emissions. Each real bridge configuration has stray inductance in each half-bridge. When the Mosfets in the bridge are switching and load current is flowing, the stray inductance together with the dI/dt in the halfbridge causies transient overvoltages. These transient overvoltages can be feed to the DIDT pin of the gate driver by a high pass filter. Voltages exceeding 2 to 5V or –2 to –5V at this pin will strongly reduce the gate current of the actually switched Mosfet, resulting in an increased switching time in the Miller plateau of the Mosfet, and reducing the switching speed exactly and only in the critical area of the switching process. Through this regulation over-voltages are reduced and a smoother dI/dt in the bridge is obtained. For more detailed information please refer to application note.

Estimation of power dissipation within the driver IC

8 2004-03-31

+ 16 hidden pages