The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any
information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties
and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in
question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure
of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support
devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may
be endangered.
This document is valid for all TLE4997 variants and derivates. It gives a detailed description of the configuration
and calibration procedure, which is recommended to configure the TLE4997 for optimum accuracy in a sensing
application.
2TLE4997 Signal Processing
The TLE4997 uses a fully digital signal processing concept. Analog values from the Hall probe are directly
converted to raw digital signals by the Hall ADC and then compensated and processed in the digital signal
processing unit (DSP) using configuration parameters stored in the EEPROM and the temperature data acquired
by an integrated temperature sensor. A configurable second-order temperature polynomial is implemented to
compensate the thermal reduction of the remanent magnetic flux of a permanent magnet used in a position
sensing application. Additionally, an application-specific output characteristic can be set by configuring the
EEPROM parameters of Gain and Offset.
Figure 2-1 Signal Flow Diagram of the TLE4997
Figure 2-1 shows the signal flow diagram for temperature compensation and output characteristic in the DSP, and
the influence of the relevant configuration parameters stored in the EEPROM. The Hall signal is processed in the
following sequence of steps:
1. The analog Hall signal is converted by the Hall ADC, which operates at the configured magnetic range setting.
2. The digital value is filtered by a digital low-pass filter, which operates at a configurable filter frequency given
by the “LP filter”-setting. The output of the filter is stored in the HADC register.
3. The HADC value is multiplied by the temperature compensation polynomial and stored in the HCAL register.
The first order (TL) and second order (TQ) coefficients of the polynomial are configurable. The third order
coefficient (TT) is fixed.
4. The HCAL value is multiplied by the configured gain value.
5. The configured offset value is added to the HCAL value.
6. The digital Hall value is clamped according to the configured upper and lower clamping limits. The output value
of the clamping stage is converted from digital to analog.
7. An output voltage is transmitted on the OUT pin and is proportional to the supply voltage (ratiometric DAC).
User’s Manual4v01_01, 2019-08
TLE4997
optional
VDD
I/O 1
I/O2
GND
47nF
47nF
47nF
47nF
PROGRAMMER
TLE
4997x
out
V
DD
GND
TLE
4997x
out
V
DD
GND
application module
User’s Manual
TLE4997 Programming
3TLE4997 Programming
3.1Programmer Connection
Figure 3-1 shows the connection of the TLE4997 to a programmer. The pins VDD and OUT of the sensor IC are
used for the digital programming interface as described in Table 3-1 (See datasheet of corresponding TLE4997
type for pinout).
Figure 3-1 Connection of TLE4997 to Programmer
Table 3-1Pin Functions for Programming Interface
PinProgramming Function
VDDProgramming interface clock
GNDGround
OUTProgramming interface data I/O
User’s Manual5v01_01, 2019-08
TLE4997
VDD
Vout
LSBMSB
duri ng first transmission , the output stage is stil l switch ed on
power up
interface
activated
internal buffer on
VDD
Vout
LSBMSB
during transmission the buffer is switched offinternal buffer on
interface
active
interface
active
Z
protocol
output
leading driver
off pulse
protocol
output
User’s Manual
TLE4997 Programming
3.2Programming Interface
3.2.1Communication Scheme
The digital programming interface uses specific frames, which can have one of the two following functions:
•Command frames contain a specific task (e.g. read/write data, select EEPROM programming etc.) and a
corresponding address
•Data frames contain a 16 bit data value sent to or received from the device - these frames can only follow a
proper command frame for reading or writing data
A valid frame has the following properties:
•A frame consists of 21 bits in total
•A bit is shifted in or out via the output line with a rising clock edge on the supply line
•A frame always starts and ends with a '1' (frame bits)
•The LSB of a frame transmitted to the sensor is shifted in first
•The LSB of a frame replied by the sensor is shifted out first
•The whole frame sent to the device, including frame bits, is protected with an even positional and an odd
positional parity bit
The first frame sent has to be a valid command to activate the interface mode and it has to be sent within 19ms
after power up. As an additional protection, the device does not deactivate its output stage during this transmission
(using 21 clock pulses) as shown in Figure 3-2. This means that the interface driver of the programmer needs to
overrule the open drain output stage of the sensor during this initial transmission.
Figure 3-2 First Frame Transmission to the Sensor
Attention: Overruling Vout requires a strong driver on the programmer, since the OUT line must be driven
to low levels close to GND for any “0”-bit and close to VDD for any “1”-bit in order to ensure a
proper communication with the sensor.
After the first frame, to avoid additional power consumption in the output stage of the device, the internal driver is
deactivated in programming mode while the sensor is receiving a frame. It is activated again after completion of
the transmission. This is illustrated in Figure 3-3.
Figure 3-3 Further Frame Transmisson from the Programmer to the Sensor (Write Access)
User’s Manual6v01_01, 2019-08
TLE4997
VDD
Vout
LSB
MSB
digital data readout, buffer in I/O mode
inte rnal buffer o ninternal buffer on
tailing driver on
pulse
11
POP
E
00ADDR (6bit)10CMD (6bit)1
MSB (bit 20)LSB (bit 0)
User’s Manual
TLE4997 Programming
In case of a wrong command or data frame, the interface is immediately locked and the device falls back to its
normal application mode. The read access to the device is triggered by clock pulses on the supply line as shown
in Figure 3-4. The timing of read and write accesses is described in Chapter 3.3.2.
Figure 3-4 Frame Transmisson from the Sensor to the Programmer (Read Access)
3.3Command Frame
The structure of a command frame is shown in Figure 3-5. Available commands are given in Table 3-2. The parity
bits PE (bit 17) and PO (bit 18) have to be set in the follwing way (bit 0 is the LSB, bit 20 is the MSB):
bit0 XOR bit2 XOR bit4 XOR …. XOR bit20 = 0
bit1 XOR bit3 XOR bit5 XOR …. XOR bit19 = 0
Figure 3-5 Command Frame Structure
Table 3-2List of Available Commands
CommandBits (MSB...LSB)Function
0
H
1
H
000000Leave programming mode
000001Single data readout from given address without increment (sensor
1)
response: one data frame)
3
H
9
H
000011Data readout from given address with increment (readout finishes
when address “xxx111
” is reached)
B
001001Single data write to given address without increment (followed by
one data frame)
B
H
001011Data write to given address with increment (followed by multiple data
frames; finishes at address “xxx111
B
command frame)
C
H
D
H
E
H
F
H
1) not to be followed by any data frame
2) followed by application of a programming pulse
3) followed by application of a margin voltage level before the last clock pulse falling edge
The structure of a data frame sent to the device is shown in Figure 3-6. The parity bits PE (bit 17) and PO (bit 18)
have to be set in the same way as for the command frame (bit 0 is the LSB, bit 20 is the MSB):
bit0 XOR bit2 XOR bit4 XOR …. XOR bit20 = 0
bit1 XOR bit3 XOR bit5 XOR …. XOR bit19 = 0
Figure 3-6 Data Frame to Sensor
Figure 3-7 shows a the structure data frame received from the sensor. Instead of a zero bit followed by two parity
bits, the least significant 3 bits of the address used for the readout are transmitted together with the data. This is
to check the plausibility of the received data.
Figure 3-7 Data Frame from Sensor
3.3.2Interface Specification
Table 3-3 specifies the operating conditions of the programming interface, which must be met in order to ensure
correct operation of the TLE4997 during programming. All specified parameters refer to these operating
conditions, unless otherwise noted.
Table 3-3Operating Range of the Programming Interface
ParameterSymbolValuesUnitNote / Test Condition
Min.Typ.Max.
Supply voltageV
Supply buffer capacitance C
Load capacitanceC
Ambient temperatureT
Number of programming
N
DD
S
L
PRG
PRG
cycles
Programming time
Programming start time
1) >47nF soldered to the device required in case that connectivity failures can influence the programming voltage.
t
PRG
t
PRG_START
4.5–5.5V–
47–1000nFVDD to GND
1)
0.0
–210nFOUT to GND
10–60°Cduring programming
10Cycles Programming is allowed only at
start of lifetime
–100–msFor complete memory
––19msTo start programming mode, a
first read command shall be sent
within this time window after
power-up
The specification for timings and electrical levels of the programming interface is shown in Table 3-4. The meaning
of the timing parameters is illustrated in Figure 3-8.
User’s Manual8v01_01, 2019-08
TLE4997
VDD
Vout
LSBMSB
t
cl
t
ch
tsut
hldt
del
t
hlm
LSB
t
sett
set
t
min
init
fram e
data read
frame
User’s Manual
TLE4997 Programming
Figure 3-8 Frame Timing
Table 3-4Electrical and Timing Specification of the Programming Interface
ParameterSymbolValuesUnitNote / Test Condition
Min.Typ.Max.
V
clock high levelV
DD
DD,CLKHI
8.89.410Vspecification of VDD operating
range does not apply to clock
V
clock low levelV
DD
OUT data out high levelV
OUT data out low levelV
OUT data in high levelV
OUT data in low levelV
OUT data input currentI
VDD clock high timet
V
clock low timet
DD
Data in setup timet
Data in hold timet
Data out settling timet
Time between framest
Buffer off delayt
Buffer on delayt
DD,CLKLOW
O,OHIGH
O,OLOW
O,IHIGH
O,ILOW
O
CH
CL
SU
HLD
SET
MIN
DEL
HLM
1) capacity of external driver, especially during initial interface access (to overwrite ratiometric device output).
2) to reduce collisions with the ext. driver, it must be switched on slower than t
charge/discharge behaviour on V
OUT
3) to reach again a valid and stable ratiometric V
4.855.2V
VDD - 2 –V
DD,CLKHI
VOUT follows V
0–2.0 V
3.0V
DD
VDD + 0.1V
-0.20.00.1V
-50–50mA
1)
2.450100µs5k...250kBit/s
1.64.0100µs5k...250kBit/s
1.52.0–µsto rising V
2.33.0–µsafter rising V
–1.01.7µsafter rising V
10.0––µs
10.025.0–µs
–5.010.0µs
depends also on capacitive output load.
signal state, please check the power-on time in the data sheet.
OUT
DEL
2)
2)3)
min. and switched off faster than t
DD
DD
DD
DD
if ‘high’
HLM max.
;
User’s Manual9v01_01, 2019-08
TLE4997
VDD
Vout
MSB
t
HLD
LSB
t
MIN
next command
frame
t
MIN
erase or write
command frame
(buffer stays off)
V
prog
puls e
V
O,PROG
/t
(rise)
V
O,PROG
/t
(fall)
t
PROG,WR
or t
PROG,ER
t
HLD
VDD
Vout
MSBLSB
t
MARG
next command
frame
t
min
margin
command frame
(buff er sta ys off)
Vdd/t
(fall)
t
hld
apply V
O,MARG
and
capture EEPROM data
t
min
User’s Manual
TLE4997 Programming
In order to permanently store a programmed parameter set to the EEPROM, the “EEPROM erase” and “EEPROM
write” commands shall be sent, followed by a programming pulse. Figure 3-9 shows the timing of the programming
pulse.
Figure 3-9 Programming Pulse Timing
After programming, a margin check is necessary to test the stability of the programmed data. The margin check
is initiated by an “EEPROM margin check” command followed by a margin voltage.
Figure 3-10 Margin Check Timing
The margin voltage is varied during subsequent steps within the threshold margin level range. A too low margin
voltage value indicates a too short programming pulse duration or a too low programming voltage. A too high
margin voltage value indicates a too long programming pulse duration or a too high programming voltage.
Table 3-5 gives the electrical and timing specifications of the programming pulse and the margin voltage check
procedure.
Table 3-5Electrical and Timing Specification of the Programming Pulse and Margin Voltage
ParameterSymbolValuesUnitNote / Test Condition
OUT data input currentI
OUT margin levelV
Threshold margin levelV
Margin setup timet
V
DD
OUT program levelV
User’s Manual10v01_01, 2019-08
Min.Typ.Max.
O
O,MARG
TH
MARG
slope for marginVDD/t510150V/µs
O,PROG
0–20mAduring application of
-0.1–7V
2.23–4.5
0.4
200––µs
19.219.319.4V
V
V
programming pulse or margin
voltage
check “1”
check “0”
TLE4997
User’s Manual
TLE4997 Programming
Table 3-5Electrical and Timing Specification of the Programming Pulse and Margin Voltage (cont’d)
ParameterSymbolValuesUnitNote / Test Condition
Min.Typ.Max.
OUT program slope
1)
(rise)
OUT program slope
1)
(fall)
OUT write timet
OUT erase timet
1) faster slope may lead to permanent damage of the EEPROM.
V
O,PROG
V
O,PROG
PROG,WR
PROG,ER
/t––2V/µstime to reach V
O,PROG
shall not
exceed 50 µs
/t-10––V/µstime to reach 1v max. shall not
exceed 50 µs
9.910.010.1ms
79.280.080.8ms
3.4Register Map
Table 3-6 shows the internal registers of the TLE4997 (compare also Figure 2-1).
Table 3-6TLE4997 Register Map
AddressSymbolFunctionR/W
05
06
07
0A
0B
0F
10
20
21
H
H
H
H
H
H
...19
H
H
H
H
HCALCalibrated Hall valueread only
TCALCalibrated temperature value, including reference temperature T0read only
VDACCalculated DAC value, incl. clamplingread only
HADCUncalibrated Hall ADC valueread only
TADCUncalibrated temperature ADC valueread only
STATUSStatus registerread only
EEPROMEEPROM registers (see Chapter 3.5)read/write
DAC_SETDirect setup of DAC valueread/write
TESTTest mode registerread/write
Note: To access the registers (except STATUS, HADC, TADC, VADC, DAC_SET and TEST), the digital signal
processing unit (DSPU) has to be disabled first via the TEST register.
HCAL
This register contains the temperature compensated magnetic measurement as a 16bit signed value. This value
is in the range of +/- 30000.
TCAL
This register contains a 16 bit signed value and delivers the current junction temperature of the device. The
junction temperature in °C is calculated from the register value by: T
= (TCAL/16+48) [°C].
J
VDAC
This register contains a 12 bit unsigned decimal result applied to the internal DAC for the ratiometric output stage.
The value range is from 0 to 4095 and corresponds to 0% to 100% of V
DD
.
HADC
This register contains a 16bit signed value that corresponds to the raw Hall cell measurement value. This value is
in the range of +/- 20000.
User’s Manual11v01_01, 2019-08
TLE4997
1514131211109876543210
LSB
ROMSIG4
perr_more
LOCKED
perr_adr0
CRC ok
perr_adr1
perr_adr2
perr_adr3
HWver0
ROMSIG3
ROMSIG2
ROMSIG1
ROMSIG0
HWver1
HWver2
perr_col
1514131211109876543210
LSB
FEC off
DAC test
DSP stop
REF off
DSP off
0
0
0
0
0
0
0
0
0
0
0
MSB
User’s Manual
TLE4997 Programming
TADC
This register contains a 15bit unsigned raw temperature value.
STATUS
The content of the status register is shown in Figure 3-11.
Figure 3-11 Status Register
•CRC ok has to be “1”, otherwise the DSP built-in self-test was failed and the device is defective
•LOCKED must be ’0’ as long as the lockbits are not programmed. After setting the lockbits the lock can be
verified by refreshing the EEPROM content and checking this bit before the supply of the device is removed
or the interface is closed.
•perr_adr has to be on address F
(“1111B”), otherwise it shows the first EEPROM address where the internal
H
parity check failed.
•perr_more must be “0”, otherwise more than one EEPROM address has a parity error.
•perr_col must be “0”, otherwise one or more EEPROM columns have a parity error.
•HWver contains the actual silicon revision starting with 0 (=”000”). The latest version from 8’ manufacturing line
is version 3 (=”011”, availability from mid 2006 and released for productive use).
•ROMSIG has to be 1F
, otherwise the DSP ROM is not valid and the device is defective.
H
DAC_SET
This register contains a 12 bit unsigned decimal value. When the DAC test bit is set, the value of this register is
used on the ratiometric output.
TEST
The content of the test register is shown in Figure 3-12. All bits are “0” after reset. All bits not described or used
shall be kept at “0”.
Figure 3-12 Test Register
•“Margin zero on” is used to select the margin test mode. It is set to ‘1’ for testing the EEPROM threshold
voltages of cells programmed to ‘0’, and it is set to ‘0’ for testing the EEPROM threshold voltages of cells
programmed to ‘1’.
•“FEC off” switches off the error correction of the EEPROM. This bit has to be set when reading the EEPROM
content.
•“REF off” switches off the automatic (cyclic) refresh performed by the DSP to actualize the EEPROM registers
from the EEPROM cells. This bit has to be set when writing new values to the EEPROM registers.
User’s Manual12v01_01, 2019-08
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