• Extreme low current consumption typical 65
in ON state
• Inhibit function: Below 1
mA current consumption
in off mode
• Early warning
• Reset output low down to
V
Q
= 1 V
• Adjustable reset threshold
• Overtemperature protection
• Reverse polarity proof
• Wide temperature range
TypeOrdering CodePackage
TLE 4299 GQ67006-A9417P-DSO-8-3 (SMD)
TLE 4299 GMQ67006-A9441P-DSO-14-8 (SMD)
New type
mA
P-DSO-8-3
P-DSO-14-3, -8, -9, -11
Functional Description
The TLE 4299 is a monolithic voltage regulator with fixed 5-V output, supplying loads up
to 150 mA. It is especially designed for applications that may not be powered down while
the motor is off. It only needs a quiescent current of typical 65
mA. In addition the
TLE 4299 GM includes an inhibit function. When the inhibit signal is removed, the device
is switched off and the quiescent current is less than 1
of the
m-controller, the device supplies a reset signal. The reset delay t ime is selected
mA. To achieve proper operation
application-specific by an external delay capacitor. The reset threshold is adjustable. An
early warning signal supervises the voltage at pin SI. The TLE 4299 is pin-compatible to
the TLE 4269 and functional similar with the additional inhibit function. The TLE 4299 is
designed to supply microcontroller systems even under automotive environment
conditions. Therefore it is protected against overload, short circuit and over temperature.
Data Sheet Rev. 1.012002-01-17
TLE 4299
Circuit Description
The TLE 4299 is a PNP based very low drop linear voltage regular. It regulates the
output voltage to
circuit protects the device against potential caused by damages overcurrent and
overtemperature.
V
= 5 V for an input voltag e range of 5.5 V £ V
Q
£ 45 V. The control
I
The internal control circuit achieves a 5 V output voltage with a tolerance of
± 2%.
The device includes a power on reset and an under voltage reset function with adjustable
reset delay time and adjustable reset switching threshold as well as a sense control/early
warning function. The device includes an inhibit functi on to disable it whe n the ECU is
not used for example while the motor is off.
The reset logic compares the output voltage
voltage drops below this level, the external reset delay capacitor
V
is lower than VLD, the reset output RO is switched Low. If the o utput voltage drop is
D
V
very short, the
level is not reached and no reset-signal is asserted. This feature
LD
V
to an internal thresho ld. If the output
Q
C
is discharged. When
D
avoids resets at short negative spikes at the output voltage e.g. caused by load changes.
As soon as the output voltage is more positive than the reset threshold, the delay
V
capacitor is charged with constant current. When the voltage reaches
the reset
UD
output RO is set High again.
V
The reset threshold is ei ther the internal defined
voltage (typical 4.6 V) or can be
RT
lowered by a voltage level at the RADJ input down to 3.5 V. The reset delay time and the
C
reset reaction time are defined by the external capacitor
down to
V
= 1 V.
I
. The reset function is active
D
In addition to the normal reset function, the device gives an early warning. When th e SI
voltage drops below
and the
m-processor that this voltage has dropped. The sense function uses a hysteresis:
When the SI-voltage reaches the
used as early warning function to notice the
V
, the devices asserts the SI output Low to indicate the logic
SI,low
V
level, SO is set high again. This feature can be
SI,high
m-controller about a battery voltage drop and
a possible reset in a short time. Of cause also any other voltage can be observed by this
feature.
The user defines the threshold by the resistor-values
R
and R
SI1
SI2
.
For the exact timing and calculation of the reset and sense timing and thresholds, please
refer to the application section.
Data Sheet Rev. 1.022002-01-17
TLE 4299
SI
RADJ
I
Band-
Gap-
Reference
Current
and
Saturation
Control
R
SO
R
Reference
Reset
Control
Q
RO
SO
RO
Figure 1Block Diagram TLE 4299 G
D
GND
AEB03103
Data Sheet Rev. 1.032002-01-17
TLE 4299
TLE 4299
INH
SI
RADJ
I
Band-
Gap-
Reference
Current
and
Saturation
R
SO
Q
Control
Inhibit
Control
R
RO
SO
Reference
RO
Reset
Control
Figure 2Block Diagram TLE 4299 GM
D
GND
AEB03104
Data Sheet Rev. 1.042002-01-17
TLE 4299
P-DSO-8-3
I
SI27
RADJ36
D45
81
Q
SO
RO
GND
AEP02832
Figure 3Pin Configuration (top view)
Pin Definitions and Functions (TLE 4299 G)
Pin No.SymbolFunction
1I Input; block directly to GND on the IC with a ceramic capacitor.
2SISense Input; if not needed connect to Q.
3RADJReset Threshold; if not needed connect to GND.
4DReset Delay; to select delay time, connect to GND via external
capacitor.
5GNDGround
6ROReset Output; the open-collector output is internally linked to Q
via a 20 kW pull-up resistor. Keep open, if the pin is not needed.
7SOSense Output; the open-collector output is internally linked to
the output via a 20 k
W pull-up resistor. Keep open, if the pin is not
needed.
8Q5-V Output; connect to GND with a 22
mF capacitor, ESR < 5 W.
Data Sheet Rev. 1.052002-01-17
TLE 4299
P-DSO-14-8
141RADJSI
D213
GND312
GND411
GND5
INH
RO78
69
10
I
GND
GND
GND
Q
SO
AEP02831
Figure 4Pin Configuration (top view)
Pin Definitions and Functions (TLE 4299 GM)
Pin No.SymbolFunction
1RADJReset Threshold; if not needed connect to GND.
2DReset Delay; connect to GND via external delay capacitor for
setting delay time.
3, 4, 5GNDGround
6INH
Inhibit; If not needed connect to input pin I; a high signal switches
the regulator ON.
7ROReset Output; open-collector output, internally connected to Q
via a pull-up resistor of 20 k
W. Keep open, if the pin is not needed.
8SOSense Output; open-collector output, internally connected to Q
via a 20 k
9Q5-V Output; connect to GND with a 22
W pull-up resistor. Keep open, if the pin is not needed.
mF capacitor, ESR < 5 W.
10, 11, 12 GNDGround
13IInput; block to GND directly at the IC by a ceramic capacitor.
14SISense Input; if not needed connect to Q.
Data Sheet Rev. 1.062002-01-17
Absolute Maximum Ratings
T
= – 40 to 150 °C
j
ParameterSymbolLimit ValuesUnitNotes
min.max.
Input I
TLE 4299
Input voltage
V
Inhibit Input INH
Input voltageV
Sense Input SI
Input voltage
Input current
V
I
Reset Threshold RADJ
Voltage
Current
V
I
Reset Delay D
I
INH
SI
SI
RE
RE
– 4045V–
– 4045V–
– 0.345V–
11mA–
– 0.37V–
– 1010mA–
Voltage
V
D
– 0.37V–
Reset Output RO
Voltage
V
R
– 0.37V–
Sense Output SO
Voltage
V
SO
– 0.37V–
5-V Output Q
Output voltage
Output current
Data Sheet Rev. 1.072002-01-17
V
I
Q
Q
– 0.37V–
– 5
–
mA–
Absolute Maximum Ratings (cont’d)
T
= – 40 to 150 °C
j
ParameterSymbolLimit ValuesUnitNotes
min.max.
Temperature
TLE 4299
Junction temperature
Storage temperature
T
j
T
Stg
–150°C–
– 50150°C–
Operating Range
Input voltage
Junction temperature
V
T
I
j
–45V–
– 40150°C–
Thermal Data
Junction-ambient
Junction-pin
1)
Measured to pin 4.
R
R
thja
thjp
–200
70
–60
30
K/W
K/W
K/W
K/W
P-DSO-8-3
P-DSO-14-8
P-DSO-8-3
P-DSO-14-8
1)
Note: Stresses above tho se listed here may cause permanent dam age to the device.
Exposure to absolute maximum rating conditions for extended periods may affect
device reliability.
In the operating range, the functions given in the circuit description are fulfilled.
Sense threshold high
Sense threshold low
Sense input switching
V
SI high
V
SI low
V
SI HYST
1.341.45 1.54V–
1.261.36 1.44V–
5090130mVV
SI HYST
= V
SI high
– V
SI low
hysteresis
Sense output low voltage V
External SO pull up
R
SO low
SO ext
–0.10.4VVSI< 1.20 V; Vi>4.2V;
I
= 0
SO
5.6–– kW–
resistor
Sense pull up
Sense input current
Sense high reaction time
Sense low reaction time
Data Sheet Rev. 1.0102002-01-17
R
SO
I
SI
t
pd SO LH
t
pd SO HL
102040kW–
– 10.11mA–
–2.42.9ms–
–1.72.1ms–
TLE 4299
Note: The listed characteristic s are ensure d over the operating ra nge of the i ntegrated
circuit. Typical characteristi cs specify me an values expe cted over the production
spread. If not otherwise spe cified, typi cal characte ristics appl y at
the given supply voltage.
T
= 25 °C and
A
V
V
V
V
I
INH
RADJ
SI
I
I
I
INH
(TLE 4299 GM only)
C
D
100 nF
I
RADJ
I
S
I
I
Q1
I
Q1
V
Q1
TLE 4299
INH
I
D
D
I
D
RO
V
RO
RADJ
SISO
V
SO
GND
I
GND
AES02835
Figure 5Measurement Circuit
Data Sheet Rev. 1.0112002-01-17
Application Information
TLE 4299
TLE 4299
V
BAT
C
C
2
I
I
1
I
Band-
Gap-
Reference
Current
and
Saturation
R
SO
Q
C
Q1
22 F
C
Q2
P
Control
R
RO
R
SI1
SO
SI
R
SI2
Reference
RO
Reset
Control
R
ADJ1
RADJ
GND
D
R
C
D
ADJ2
AES03105
Figure 6Application Diagram TLE 4299 G
Data Sheet Rev. 1.0122002-01-17
TLE 4299
V
BAT
C
1
I
From
KI. 15
TLE 4299
C
2
I
I
Band-
Gap-
Reference
INH
R
SI1
SI
R
SI2
GND
Inhibit
Logic
Reference
Current
and
Saturation
Control
D
C
D
Reset
Control
R
SO
RADJ
R
SO
RO
Q
RO
C
Q1
22 F
R
R
C
Q2
ADJ1
ADJ2
P
AES03106
Figure 7Application Diagram with Inhibit Function
The TLE 4299 sup plies a regulat ed 5 V output voltage with an accurac y of 2% from an
T
input voltage between 5.5 V and 45 V in the temperature range of
= – 40 to 150 °C.
j
The device is capable to supply 150 mA. For protection at high input voltage above 25 V,
the output current is reduced (SOA protection).
An input capacitor is necessary for compensating line influences and to limit steep input
edges. A resistor of approx. 1
W in series wi th C
, can damp the LC of the input inductivity
I
and the input capacitor.
The voltage regulator requires for sta bility a n output c apacito r
an ESR below 5
Data Sheet Rev. 1.0132002-01-17
W.
C
of at least 22 mF with
Q
TLE 4299
Reset
The power on reset feature is necessary for a defined start of the microprocessor when
switching on the application. For the reset delay time after the output voltage of the
regulator is above the reset threshold, the reset signal is set High again. The reset delay
time is defined by the reset delay capacitor
The under-voltage reset circu itry supervises the output voltag e. In case
below the reset threshol d t he rese t output is set LOW afte r th e re set reac tio n ti me. The
reset LOW signal is generated down to an output voltage
reaction time and the reset delay time is defined by the capacitor value.
The power on reset delay time is defined by the charging time of an external delay
capacitor
With
For a delay capacitor
The reset reaction time
C
.
D
C
= (td ´ID) / DV[1]
D
C
t
d
DV= V
DV= V
I
D
reset delay capacitor
D
reset delay time
, typical 1.8 V for power up reset
UD
– VLD typical 1.35 V for undervoltage reset
UD
charge current typical 6.5 mA
C
=100 nF the typical power on reset delay time is 28 ms.
D
t
is the time it takes the voltage reg ulator to set reset output
RR
LOW after the output volt age ha s dropp ed belo w the rese t thresho ld. It i s typic ally 1
for delay capacitor of 100 nF. For other values for
using the following equation:
C
at pin D.
D
V
decreases
Q
V
to 1 V. Both the reset
Q
C
the reaction time can be estimated
D
ms
t
= 10 ns / nF ´ C
RR
D
[2]
Data Sheet Rev. 1.0142002-01-17
TLE 4299
V
I
V
Q
V
RT
V
D
V
UD
V
LD
t
t
V
RO
V
RO, SAT
Power-on-ResetVoltage DipSecondaryOverload
d
Thermal
Shutdown
RR
Undervoltage
at Input
tRR<
V
ddI
D
=
t
C
D
at OutputSpike
Figure 8Reset Timing Diagram
The reset output is an open collector output with a pull-up resistor of typical 20 k
An external pull-up can be added with a resistor value of at least 5.6 k
W.
t
t
t
t
AED03107
W to Q.
In addition the reset switching threshold can be adjusted by an external voltage divider.
The feature is useful for microprocessors which guarantee safe operation down to
voltages below the internally set reset threshold of 4.65 V typical.
If the internal used reset threshold of typical 4.65 V is used, the pin RADJ has to be
connected to GND.
If a lower reset threshold is required by the system, a vol tage divider defines the reset
threshold
V
RADJ TH
Data Sheet Rev. 1.0152002-01-17
V
between 3.5 V and 4.60 V:
Rth
V
is typical 1.36 V.
Rth
= V
RADJ TH
´ (R
ADJ1
+ R
ADJ2
) /R
ADJ2
[3]
TLE 4299
Early Warning
The early warning function compares a voltage defined by the user to an internal
reference voltage. Therefore the supervised voltage has to be scaled down by an
external voltage divide r in order to compare it to the internal sense thresho ld of typical
1.35 V. The sense output pin is set low, when the voltage at SI falls below this threshold.
A typical example wh ere the circuit c an be used is to supervise t he input voltage
V
to
I
give the microcontroller a prewarning of low battery condition.
Calculation to the voltage di vider can be easily don e since the sense input curre nt can
be neglected.
Sense
Input
Voltage
V
SI, High
V
SI, Low
t
Sense
Output
High
t
PD SO LHPD SO HL
t
Low
t
AED02559
Figure 9Sense Timing Diagram
V
V
thHL
thLH
= (R
= (R
SI1
SI1
+ R
+ R
SI2
SI2
)/R
)/R
SI2
SI2
´V
´ V
SI low
SI high
[4]
[5]
The sense in comparator u ses a hysteresis of typical 100 mV. This hyst eresis of the
supervised threshold is multiplied by the resistor dividers amplification (
SI1
+ R
SI2
)/R
SI1
R
The sense in comparator c an a lso be used for receiving data wi th a thres hold of typical
1.35 V and a hysteres is of 1 00 mV. Of course al so the d ata sig nal can be scaled down
with a resistive divi der as shown abov e. With a typi cal delay time of 2.4
transitions and 1.7
ms for negative transitions receiving data of up to 100 kBaud are
ms for positive
possible.
Data Sheet Rev. 1.0162002-01-17
.
TLE 4299
The sense output is an open collector output with a pull-up resistor of typical 20 kW to Q.
An external pull-up can be added with a resistor value of at least 5.6 k
Typical Performance Characteristics
W.
Output Voltage
Temperature
5.2
V
Q
V
5.1
5.0
4.9
4.8
4.7
4.6
-40
T
04080
V
Q
j
versus
V = 13.5 V
Ι
AED01671
120 C 160
T
j
Output Voltage VQ versus
Input Voltage
12
V
Q
V
10
8
6
4
2
0
0
V
I
RL=50
246
AED01808
Ω
8V10
V
Ι
Data Sheet Rev. 1.0172002-01-17
TLE 4299
Charge Current Ich versus
T
Temperature
12
µA
I
D
10
8
6
4
2
0
-40
j
V
= 13.5 V
I
= 1 V
V
D
04080120160
AED03108
˚C
T
j
Drop Voltage
V
Output Current
400
mV
V
DR
300
250
200
150
100
50
0
0
50100150200
versus
dr
I
Q
125 ˚C
25 ˚C
AED02929
mA
I
Q
Switching Voltage
T
Temperature
3.2
V
V
D
2.8
2.4
2.0
1.6
1.2
0.8
0.4
0
-40
j
04080120 C 160
V
and V
dt
V = 13.5 V
Ι
V
UD
V
LD
versus
st
AED01804
T
j
Reset Adjust Switching Threshold
V
RADJTH
V
versus Temperature Tj
1.5
V
RADJTH
1.4
1.3
1.2
1.1
1.0
0.9
-40
40080160120 ˚C
AED03109
T
j
Data Sheet Rev. 1.0182002-01-17
TLE 4299
Sense Threshold V
si
versus Temperature Tj
1.6
V
V
Si
1.5
Sense Output High
1.4
Sense Output Low
1.3
1.2
1.1
1.0
-40
40080160120 ˚C
AED02933
T
j
Output Current Limit
V
Input Voltage
350
Ι
mA
Q
300
250
200
150
100
50
0
0
I
=25C
T
j
T
j
102030
I
versus
Q
C125=
AED03110
40V50
V
Ι
Current Consumption
I
Output Current
1.0
mA
I
q
0.8
0.6
0.4
0.2
0
0
Q
10
20304060mA
I
versus
q
AED02931
I
Q
Current Consumption
Output Current
5
mA
I
q
4
3
2
1
0
0
I
Q
50100150200
I
versus
q
AED02932
mA
I
Q
Data Sheet Rev. 1.0192002-01-17
Package Outlines
P-DSO-8-3 (SMD)
(Plastic Dual Small Outline)
TLE 4299
Sorts of Packing
Package outlines for tubes, trays etc. are contained in our
Data Book “Package Information”
SMD = Surface Mounted Device
GPS05121
Dimensions in mm
Data Sheet Rev. 1.0202002-01-17
P-DSO-14-8 (SMD)
(Plastic Dual Small Outline)
TLE 4299
Sorts of Packing
Package outlines for tubes, trays etc. are contained in our
Data Book “Package Information”
SMD = Surface Mounted Device
GPS05093
Dimensions in mm
Data Sheet Rev. 1.0212002-01-17
Edition 2002-01-17
Published by Infineon Technologies AG,
The information herein is given to describe
certain components and shall not be considered as warranted characteristics.
Terms of delivery and rights to technical
change reserved.
We hereby disclaim any and all warranties,
including but not limited to warranties of
non-infringement, regarding circuits, descriptions and charts stated herein.
Infineon Technologies is an approved CECC
manufacturer.
TLE 4299
Information
For further information on technology, delivery terms and conditions and prices please
contact your nearest Infineon Technologies
Office in Germany or our Infineon Techno logies Representatives worldwide (see address list).
Warnings
Due to technical requirements components
may contain dangerous substances. For information on the types in question please
contact your nearest Infineon Technologies
Office.
Infineon T echnologies Components may only
be used in life-support devices or systems
with the express written approval of Infineon
T echnologies, if a f ailure of such components
can reasonably be expected to cause the failure of that life-support device or system, or to
affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or t o support and/or maintain and
sustain and/or protect human life. If they fa il, it
is reasonable to assume that the health of the
user or other persons may be endangered.
Data Sheet Rev. 1.0222002-01-17
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