INFINEON TDA21102 User Manual

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CoreControl

TM

Data Sheet TDA21102

High speed Driver with bootstrapping for
dual Power MOSFETs

Features

• Fast rise and fall times for frequencies up to 2 MHz

• Capable of sinking more than 4 A peak current for lowest switching losses

• Charges the High Side and Low Side MOSFET´s gate to 6..12 V according to

PVCC setting.

• Adjustable High Side and Low Side MOSFET gate drive voltage via PVCC pin for
optimizing ON losses and gate drive losses

• Integrates the bootstrap diode for reducing the part count

• Prevents from cross-conducting by adaptive gate drive control

• High voltage rating on Phase node

• Supports shut-down mode for very low quiescent current through three-state input

• Compatible to standard PWM controller ICs (Intersil, Analog Devices)

• Floating High Side MOSFET drive

• Ideal for multi-phase Desktop CPU supplies on motherboards and VRM´s

Type Package Marking Ordering Code

TDA21102 P-DSO-14-3 21102 Q67042-S4244

Pinout

LS1

LS2

PWM1 VCC

PWM2 PHASE1

GND GATGATE

GATE

PVCC BOOT2

PGND GATE

GATE

Top View

HS1

BOOT1

HS2

PHASE2

Rev. 1.0 Page 1 Dec 19, 2003

Number Name Description

1 PWM1 Input for the PWM1 controller signal
2 PWM2 Input for the PWM2 controller signal
3 GND Ground
4 GATE

5 PVCC Input to adjust the High Side gate drive
6 PGND Power ground return for the Low Side Drivers
7 GATE

8 PHASE2 To be connected to the junction of the High

9 GATE

10 BOOT2 Floating bootstrap pin. To be connected to the

11 BOOT1 Floating bootstrap pin. To be connected to the

12 GATE

13 PHASE1 To be connected to the junction of the High

14 VCC Supply Voltage

P-DSO-14-3

P-DSO-8-7

Gate drive output for the N-Channel Low Side

LS1

LS2

HS2

HS1

MOSFET 1.

Gate drive output for the N-Channel Low Side

MOSFET 2.

Side and the Low Side MOSFET 2

Gate drive output for the N-Channel High Side

MOSFET 2.

external bootstrap capacitor to generate the
gate drive voltage for the High Side N-Channel
MOSFET 2.

external bootstrap capacitor to generate the
gate drive voltage for the High Side N-Channel
MOSFET 1.

Gate drive output for the N-Channel High Side

MOSFET 1.

Side and the Low Side MOSFET 1

CoreControl

General Description

The dual high speed driver is designed to drive a wide range of N-Channel low side
and N-Channel high side MOSFETs with varying gate charges. It has a small
propagation delay from input to output, short rise and fall times and the same pin
configuration as the HIP6602B. In addition it provides several protection features as
well as a shut down mode for efficiency reasons. The high breakdown voltage makes
it suitable for mobile applications.

Target application

The dual high speed driver is designed to work well in half-bridge type circuits where
dual N-Channel MOSFETs are utilized. A circuit designer can fully take advantage of
the driver´s capabilities in high-efficiency, high-density synchronous DC/DC
converters that operate at high switching frequencies, e.g. in multi-phase converters
for CPU supplies on motherboards and VRM´s but also in motor drive and class-D
amplifier type applications.

Block Diagram

TM

Data Sheet TDA21102

PWM

VCC

PWM

Control

Logic

Bias

Control

Logic

Shoot

Through

Protection

GND

Shoot

Through

Protection

PVCC

LS
Driver

PVCC

LS
Driver

HS
Driver

HS
Driver

BOOT

GATE

PHASE

GATE

BOOT

GATE

PHASE

GATE

HS

LS

HS

LS

GND

Rev. 1.0 Page 2 Dec 19, 2003

CoreControl

Absolute Maximum Ratings

At Tj = 25 °C, unless otherwise specified

TM

Data Sheet TDA21102

Value Parameter Symbol

Min. Max.

Unit

Voltage supplied to ‘VCC’ pin V

Voltage supplied to ‘PVCC’ pin V

Voltage supplied to ‘PWM’ pin V
Voltage supplied to ‘BOOT’ pin referenced to ‘PHASE’ V

Voltage rating at ‘PHASE’ pin, DC V
Voltage rating at ‘PHASE’ pin, t

pulse_max

=500ns

-0.3 25

VCC

-0.3 25

PVCC

-0.3 5.5

PWM

–

BOOT

V

PHASE

PHASE

-0.3 25

-1 25

-20 30

V

Max Duty Cycle = 2%
Junction temperature TJ -25 150

°C
Storage temperature TS -55 150
ESD Rating; Human Body Model 4 kV
IEC climatic category; DIN EN 60068-1 55/150/56 -

Thermal Characteristic

Values UnitParameter Symbol

Min. Typ. Max.

Thermal resistance, junction-case Rth-JC 44,7

K/W

Thermal resistance, junction-ambient Rth-JA 116,2

Electrical Characteristic

At Tj = 25 °C, unless otherwise specified

Parameter Symbol Conditions

Values

Unit

Min. Typ. Max.

Supply Characteristic

Bias supply current I

Quiescent current I
Power supply current I

f = 1 MHz,

VCC

VCCQ

f = 1 MHz,

PVCC

1.8 V ≤ V

Under-voltage lockout V
Under-voltage lockout V

NO LOAD

V

PVCC

= V

VCC

PWM

= 12 V

≤ 3.0 V

NO LOAD

V

= V

PVCC

rising threshold 9.7 10.1 10.5 V

VCC

falling threshold 7.3 7.6 8.0 V

VCC

VCC

= 12 V

0.95 1.65

0.75 3

26

mA

Input Characteristic

Current in ‘PWM’ pin I
Current in ‘PWM’ pin I
Shut down window V
Shut down hold-off

V

PWM_L

V

PWM_H

SHUT

t_

1.7 V ≤ V

IN_SHUT

t_

= 0.4 V -80 115 -150

_PWM

= 4.5 V 120 180 250

_PWM

> 320 ns 1.7 3.1 V

SHUT

PWM

≤ 3.1 V

100 230 350 ns

µA

time
PWM pin open V

1.8 2.0 2.2

PWM_O

Rev. 1.0 Page 3 Dec 19, 2003