INFINEON SPS01N60C3 User Manual
SPS01N60C3
jmax
)
jmax
)
A
jmax
A
j
g
Cool MOS™ Power Transistor
Feature
• New revolutionary high voltage technology
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
• Ultra low effective capacitances
• Improved transconductance
Type Package Ordering Code
SPS01N60C3 PG-TO251-3-11 -
VDS @ T
Marking
01N60C3
R
DS(on
650 V
6 Ω
I
D
0.8 A
PG-TO251-3-11
Maximum Ratings
Parameter
Continuous drain current
T
= 25 °C
C
T
= 100 °C
C
Pulsed drain current, tp limited by T
Avalanche energy, single pulse
I
= 0.6 A, VDD = 50 V
D
Avalanche energy, repetitive tAR limited by T
jmax
Symbol Value Unit
I
D
0.8
0.5
1.6
20 mJ
0.01
1
I
Dpuls
E
AS
E
AR
A
ID = 0.8 A, VDD = 50 V
Avalanche current, repetitive t
Gate source voltage static V
Gate source voltage AC (f >1Hz)
Power dissipation, T
= 25°C P
C
Operating and storage temperature T
Reverse diode dv/dt dv/dt 15 V/ns
3)
limited by T
R
I
V
R
GS
GS
tot
, T
st
0.8 A
±20
±30
11 W
-55... +150
V
°C
Rev. 2.1 Page 1
2008-04-07
Maximum Ratings
)
SPS01N60C3
Parameter
Drain Source voltage slope
VDS = 480 V, ID = 0.8 A, Tj = 125 °C
Symbol Value Unit
dv/dt 50 V/ns
Thermal Characteristics
Parameter Symbol Values Unit
min. typ. max.
Thermal resistance, junction - case
Thermal resistance, junction - ambient, leaded
SMD version, device on PCB:
@ min. footprint
@ 6 cm
2
cooling area
2)
Soldering temperature, wavesoldering
R
R
R
T
thJC
thJA
thJA
sold
- - 11 K/W
-
-
-
-
-
-
75
75
50
- - 260 °C
1.6 mm (0.063 in.) from case for 10s
Electrical Characteristics, at Tj=25°C unless otherwise specified
Parameter
Symbol Conditions Values Unit
Drain-source breakdown voltage
Drain-Source avalanche
V
V
breakdown voltage
Gate threshold voltage V
Zero gate voltage drain current I
Gate-source leakage current I
Drain-source on-state resistance R
(BR)DSS
(BR)DS
GS(th
DSS
GSS
DS(on)
min. typ. max.
VGS=0V, ID=0.25mA 600 - - V
VGS=0V, ID=0.8A - 700 -
ID=250µΑ, VGS=V
VDS=600V, VGS=0V,
T
=25°C,
j
T
=150°C
j
VGS=30V, VDS=0V - - 100 nA
VGS=10V, ID=0.5A,
T
=25°C
j
T
=150°C
j
2.1 3 3.9
DS
-
-
-
-
0.1
-
5.6
15.1
µA
1
50
Ω
6
-
Rev. 2.1 Page 2
2008-04-07
Electrical Characteristics , at Tj = 25 °C, unless otherwise specified
(
)
SPS01N60C3
Parameter
Symbol Conditions Values Unit
Transconductance g
Input capacitance C
Output capacitance C
Reverse transfer capacitance C
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Gate Charge Characteristics
Gate to source charge
Q
Gate to drain charge Q
Gate charge total Q
fs
iss
oss
rss
d(on)
r
d(off)
f
gs
gd
g
min. typ. max.
VDS≥2*ID*R
I
=0.5A
D
VGS=0V, VDS=25V,
f=1MHz
DS(on)max
,
- 0.75 - S
- 100 - pF
- 40 -
- 2.5 -
VDD=350V, VGS=0/10V,
I
=0.8A, RG=100Ω
D
- 30 - ns
- 25 -
- 55 82
- 30 45
VDD=350V, ID=0.8A - 0.9 - nC
- 2.2 -
VDD=350V, ID=0.8A,
V
=0 to 10V
GS
- 3.9 5
Gate plateau voltage V
1
Repetitve avalanche causes additional power losses that can be calculated as P
2
Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
3
ISD<=ID, di/dt<=400A/us, V
Identical low-side and high-side switch.
DClink
=400V, V
plateau
peak<VBR, DSS
VDD=350V, ID=0.8A - 5.5 - V
=EAR*f.
AV
, Tj<T
j,max
.
Rev. 2.1 Page 3
2008-04-07
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