SPS01N60C3
jmax
)
jmax
)
A
jmax
A
j
g
Cool MOS™ Power Transistor
Feature
• New revolutionary high voltage technology
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
• Ultra low effective capacitances
• Improved transconductance
Type Package Ordering Code
SPS01N60C3 PG-TO251-3-11 -
VDS @ T
Marking
01N60C3
R
DS(on
650 V
6 Ω
I
D
0.8 A
PG-TO251-3-11
Maximum Ratings
Parameter
Continuous drain current
T
= 25 °C
C
T
= 100 °C
C
Pulsed drain current, tp limited by T
Avalanche energy, single pulse
I
= 0.6 A, VDD = 50 V
D
Avalanche energy, repetitive tAR limited by T
jmax
Symbol Value Unit
I
D
0.8
0.5
1.6
20 mJ
0.01
1
I
Dpuls
E
AS
E
AR
A
ID = 0.8 A, VDD = 50 V
Avalanche current, repetitive t
Gate source voltage static V
Gate source voltage AC (f >1Hz)
Power dissipation, T
= 25°C P
C
Operating and storage temperature T
Reverse diode dv/dt dv/dt 15 V/ns
3)
limited by T
R
I
V
R
GS
GS
tot
, T
st
0.8 A
±20
±30
11 W
-55... +150
V
°C
Rev. 2.1 Page 1
2008-04-07
Maximum Ratings
)
SPS01N60C3
Parameter
Drain Source voltage slope
VDS = 480 V, ID = 0.8 A, Tj = 125 °C
Symbol Value Unit
dv/dt 50 V/ns
Thermal Characteristics
Parameter Symbol Values Unit
min. typ. max.
Thermal resistance, junction - case
Thermal resistance, junction - ambient, leaded
SMD version, device on PCB:
@ min. footprint
@ 6 cm
2
cooling area
2)
Soldering temperature, wavesoldering
R
R
R
T
thJC
thJA
thJA
sold
- - 11 K/W
-
-
-
-
-
-
75
75
50
- - 260 °C
1.6 mm (0.063 in.) from case for 10s
Electrical Characteristics, at Tj=25°C unless otherwise specified
Parameter
Symbol Conditions Values Unit
Drain-source breakdown voltage
Drain-Source avalanche
V
V
breakdown voltage
Gate threshold voltage V
Zero gate voltage drain current I
Gate-source leakage current I
Drain-source on-state resistance R
(BR)DSS
(BR)DS
GS(th
DSS
GSS
DS(on)
min. typ. max.
VGS=0V, ID=0.25mA 600 - - V
VGS=0V, ID=0.8A - 700 -
ID=250µΑ, VGS=V
VDS=600V, VGS=0V,
T
=25°C,
j
T
=150°C
j
VGS=30V, VDS=0V - - 100 nA
VGS=10V, ID=0.5A,
T
=25°C
j
T
=150°C
j
2.1 3 3.9
DS
-
-
-
-
0.1
-
5.6
15.1
µA
1
50
Ω
6
-
Rev. 2.1 Page 2
2008-04-07
Electrical Characteristics , at Tj = 25 °C, unless otherwise specified
(
)
SPS01N60C3
Parameter
Symbol Conditions Values Unit
Transconductance g
Input capacitance C
Output capacitance C
Reverse transfer capacitance C
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Gate Charge Characteristics
Gate to source charge
Q
Gate to drain charge Q
Gate charge total Q
fs
iss
oss
rss
d(on)
r
d(off)
f
gs
gd
g
min. typ. max.
VDS≥2*ID*R
I
=0.5A
D
VGS=0V, VDS=25V,
f=1MHz
DS(on)max
,
- 0.75 - S
- 100 - pF
- 40 -
- 2.5 -
VDD=350V, VGS=0/10V,
I
=0.8A, RG=100Ω
D
- 30 - ns
- 25 -
- 55 82
- 30 45
VDD=350V, ID=0.8A - 0.9 - nC
- 2.2 -
VDD=350V, ID=0.8A,
V
=0 to 10V
GS
- 3.9 5
Gate plateau voltage V
1
Repetitve avalanche causes additional power losses that can be calculated as P
2
Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
3
ISD<=ID, di/dt<=400A/us, V
Identical low-side and high-side switch.
DClink
=400V, V
plateau
peak<VBR, DSS
VDD=350V, ID=0.8A - 5.5 - V
=EAR*f.
AV
, Tj<T
j,max
.
Rev. 2.1 Page 3
2008-04-07
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
SPS01N60C3
Parameter
Symbol Conditions Values Unit
min. typ. max.
Inverse diode continuous
I
S
TC=25°C - - 0.8 A
forward current
Inverse diode direct current,
I
SM
- - 1.6
pulsed
Inverse diode forward voltage V
Reverse recovery time t
Reverse recovery charge Q
rr
SD
rr
VGS=0V, IF=I
VR=350V, IF=IS ,
di
/dt=100A/µs
F
S
- 1 1.2 V
- 570 970 ns
- 0.75 - µC
Typical Transient Thermal Characteristics
Symbol Value Unit Symbol Value Unit
typ. typ.
Thermal resistance
R
th1
R
th2
R
th3
R
th4
R
th5
R
th6
0.225 K/W
0.395
0.603
0.995
0.691
0.148
Thermal capacitance
C
C
C
C
C
C
th1
th2
th3
th4
th5
th6
0.00001221
0.00005037
0.0000809
0.0002915
0.001844
Ws/K
0.412
T
R
j T
th1
P
(t)
tot
C
th1
Rev. 2.1 Page 4
C
th2
R
th,n
C
th,n
T
case
amb
External Heatsink
2008-04-07
SPS01N60C3
1 Power dissipation
P
= f (TC)
tot
12
W
10
9
8
tot
P
7
6
5
4
3
2
1
0
0 20 40 60 80 100 120
°C
2 Safe operating area
I
= f ( VDS )
D
parameter : D = 0 , T
1
10
A
0
10
D
I
-1
10
-2
10
160
T
C
10
0
tp = 0.001 ms
tp = 0.01 ms
tp = 0.1 ms
tp = 1 ms
DC
10
=25°C
C
1
10
2
V
3
10
V
DS
3 Transient thermal impedance
= f (tp)
Z
thJC
parameter: D = t
2
10
K/W
1
10
thJC
Z
0
10
-1
10
-2
10
10-710-610-510-410-310-210
/T
p
D = 0.5
D = 0.2
D = 0.1
D = 0.05
D = 0.02
D = 0.01
single pulse
4 Typ. output characteristic
= f (VDS); Tj=25°C
I
D
parameter: t
2.5
A
D
I
1.5
1
0.5
-1
1
10
s
t
p
0
0 5 10 15
= 10 µs, V
p
GS
20V
10V
V
7V
6.5V
6V
5.5V
5V
V
DS
25
Rev. 2.1 Page 5
2008-04-07
SPS01N60C3
j
5 Drain-source on-state resistance
R
DS(on)
parameter : I
R
= f (Tj)
= 0.5 A, VGS = 10 V
D
34
Ω
28
24
DS(on)
20
16
12
8
4
0
-60 -20 20 60 100
98%
typ
°C
6 Typ. transfer characteristics
I
= f ( VGS ); VDS≥ 2 x ID x R
D
DS(on)max
parameter: tp = 10 µs
2.5
A
D
I
1.5
1
0.5
180
T
j
0
0 4 8 12
V
GS
20
V
7 Typ. gate charge
= f (Q
V
GS
parameter: I
16
V
12
GS
V
0.2 V
10
0.8 V
8
6
4
2
0
0 1 2 3 4
)
Gate
= 0.8 A pulsed
D
DS max
DS max
nC
Q
Gate
5.5
8 Forward characteristics of body diode
= f (VSD)
I
F
parameter: T
1
10
A
0
10
F
I
-1
10
-2
10
0 0.4 0.8 1.2 1.6 2 2.4
, tp = 10 µs
Tj = 25 °C typ
Tj = 150 °C typ
Tj = 25 °C (98%)
Tj = 150 °C (98%)
3
V
V
SD
Rev. 2.1 Page 6
2008-04-07
SPS01N60C3
9 Avalanche SOA
I
= f (tAR)
AR
par.: T
I
≤ 150 °C
j
0.9
A
0.7
0.6
AR
0.5
0.4
T
j(START)
0.3
0.2
0.1
0
10-310-210-110010110
=125°C
T
j(START)
=25°C
2
µs
t
AR
10
10 Avalanche energy
E
= f (Tj)
AS
par.: I
4
= 0.6 A, VDD = 50 V
D
22
mJ
18
16
AS
14
E
12
10
8
6
4
2
0
25 50 75 100 125 150
°C
200
T
j
11 Drain-source breakdown voltage
V
(BR)DSS
(BR)DSS
V
= f (Tj)
720
V
680
660
640
620
600
580
560
540
-60 -20 20 60 100
°C
12 Typ. capacitances
C = f (V
parameter: V
10
pF
10
C
10
180
T
j
10
)
DS
=0V, f=1 MHz
GS
3
C
2
1
0
0 10 20 30 40 50 60 70 80
iss
C
oss
C
rss
V
100
V
DS
Rev. 2.1 Page 7
2008-04-07
Definition of diodes switching characteristics
SPS01N60C3
Rev. 2.1 Page 8
2008-04-07
PG-TO-251-3-11
SPS01N60C3
Rev. 2.1 Page 9
2008-04-07
Rev. 2.1 Page 10
SPS01N60C3
2008-04-07
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