SPP/B80P06P
SIPMOS® Small-Signal-Transistor
Product Summary
Features
• P-Channel
• Enhancement mode
• Avalanche rated
• dv /dt rated
• 175°C operating temperature
P-TO263-3-2
• Pb-free lead finishing; RoHS compliant
Parameter Symbol Conditions Unit
Continuous drain current
I
D
TA=25 °C
1)
V
DS
R
DS(on),max
I
D
PG-TO220-3-1
Value
steady state
-80
-60 V
0.023
-80 A
Ω
A
Pulsed drain current
Avalanche energy, single pulse
Avalanche energy, periodic limited by
T
jmax
I
D,pulse
E
AS
E
AR
Reverse diode dv /dt dv /dt
Gate source voltage
Power dissipation
Operating and storage temperature
V
GS
P
tot
, T
T
j
ESD class
Soldering temperature
IEC climatic category; DIN IEC 68-1
1)
Current limited by bondwire; with an R
thJC
T
=100 °C
A
TA=25 °C
-320
ID=80 A, RGS=25 Ω
34
I
=80 A, VDS=48 V,
D
di /dt =-200 A/µs,
T
=175 °C
j,max
TA=25 °C
stg
"-55 ... +175"
260 °C
55/175/56
= 0.4 K/W the chip is able to carry ID= -91A
-68
824
-6
±20
375
mJ
kV/µs
V
W
°C
Rev 1.3 page 1 2006-10-12
SPP/B80P06P
.
Parameter Symbol Conditions Unit
Values
min. typ. max.
Thermal characteristics
Thermal resistance,
junction - case
Thermal resistance,
junction - ambient, leaded
SMD version, device on PCB:
Electrical characteristics, at T
R
thJC
R
thJA
R
thJA
=25 °C, unless otherwise specified
j
minimal footprint - - 62 K/W
2
cooling area
6 cm
- - 0.4 K/W
--62
2)
--40
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Transconductance
2)
Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70µm thick) copper area for drain connection.
PCB is vertical without blown air
V
(BR)DSSVGS
V
GS(th)
I
DSS
I
GSS
R
DS(on)VGS
g
fs
=0 V, ID=-250 µA
VDS=VGS, ID=-
5500 µA
VDS=-60 V, VGS=0 V,
T
=25 °C
j
V
=-60 V, VGS=0 V,
DS
T
=150 °C
j
VGS=-20 V, VDS=0 V
=-10 V, ID=-64 A
|VDS|>2|ID|R
I
=-64 A
D
DS(on)max
-60 - - V
-2.1 3 -4
- -0.1 -1 µA
- -10 -100
- -10 -100 nA
-2123
,
18 36 - S
mΩ
Rev 1.3 page 2 2006-10-12
SPP/B80P06P
Parameter Symbol Conditions Unit
Values
min. typ. max.
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
C
C
C
t
t
t
t
iss
oss
rss
d(on)
r
d(off)
f
=0 V, VDS=-25 V,
V
GS
f =1 MHz
VDD=-30 V, VGS=10 V, I
R
=1 Ω
G
=-64 A,
D
- 3900 5190 pF
- 1370 1820
- 610 920
- 21.5 32.2 ns
- 58.9 88
-4465
-2943
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Q
gs
Q
gd
Q
g
V
=-48 V, ID=-80 A,
DD
V
=0 to -10 V
GS
- -21.2 -28.2 nC
- -58 -87
- -115 -153
Gate plateau voltage
Reverse Diode
Diode continuous forward current
Diode pulse current
Diode forward voltage
Reverse recovery time
Reverse recovery charge
V
plateau
I
S
I
S,pulse
V
SD
t
rr
Q
--6-V
- - -80 A
=25 °C
T
A
- - -320
VGS=0 V, IF=-80 A,
T
=25 °C
j
- -1.02 -1.6 V
- 117 175 ns
=30 V, IF=|IS|,
V
R
di
/dt =100 A/µs
rr
F
- 420 630 nC
Rev 1.3 page 3 2006-10-12
1 Power dissipation 2 Drain current
P
=f(TA) ID=f(TA); |VGS|≥10 V
tot
80
350
300
60
250
SPP/B80P06P
200
[W]
tot
P
[A]
D
-I
40
150
100
20
50
0
0 40 80 120 160
TA [°C]
0
0 40 80 120 160
TA [°C]
3 Safe operating area 4 Max. transient thermal impedance
Z
I
=f(VDS); TA=25 °C1); D =0
D
parameter: t
[A]
D
-I
10
10
10
10
3
2
1
0
p
limited by on-state
resistance
DC
10 ms
10 µs
100 µs
1 ms
100 ms
=f(tp)
thJA
parameter: D =tp/T
0
10
0.5
0.2
-1
10
[K/W]
thJS
Z
10
-5
0.02
0.05
0.01
-4
0.1
10
10
-3
10
10
-1
-2
10
0
10
10
2
1
single pulse
-1
10
-2
10
10
-1
10
0
10
1
-VDS [V]
10
2
tp [s]
Rev 1.3 page 4 2006-10-12
5 Typ. output characteristics 6 Typ. drain-source on resistance
I
=f(VDS); Tj=25 °C R
D
parameter: V
GS
180
-20 V
160
-10 V
140
-7V
120
[A]
D
-I
100
80
-6 V
-5.5V
60
40
-5 V
20
-4.5 V
-4 V
0
01234567
-VDS [V]
=f(ID); Tj=25 °C
DS(on)
parameter: V
90
80
70
-4 V
60
]
Ω
50
[m
40
DS(on)
R
30
20
10
0
0 20 40 60 80 100 120 140 160
GS
-4.5 V
-5 V
-5.5 V
-6 V
-7 V
-10 V
-20V
-ID [A]
SPP/B80P06P
7 Typ. transfer characteristics 8 Typ. forward transconductance
I
=f(VGS); |VDS|>2|ID|R
D
parameter: T
j
60
50
40
[A]
30
D
-I
20
10
0
01234567
DS(on)max
125 °C
25 °C
-VGS [V]
gfs=f(ID); Tj=25 °C
60
50
40
[S]
30
fs
g
20
10
0
0 10203040506070
-ID [A]
Rev 1.3 page 5 2006-10-12
9 Drain-source on-state resistance 10 Typ. gate threshold voltage
R
=f(Tj); ID=-64 A; VGS=-10 V V
DS(on)
=f(Tj); VGS=VDS; ID=-5500 µA
GS(th)
SPP/B80P06P
4.5
5
4
min.
70
60
50
3.5
]
Ω
[m
DS(on)
R
40
30
20
98 %
typ.
[V]
GS(th)
-V
3
2.5
2
typ.
max.
1.5
10
0
-60 -20 20 60 100 140 180
Tj [°C]
1
0.5
-60 -20 20 60 100 140 180
Tj [°C]
11 Typ. capacitances 12 Forward characteristics of reverse diode
C =f(V
); VGS=0 V; f =1 MHz IF=f(VSD)
DS
parameter: T
j
150 °C, 98%
25 °C, typ
25 °C, 98%
-VSD [V]
Ciss
C [pF]
10
10
3
2
Coss
Crss
0 5 10 15 20 25
-VDS [V]
1
10
[A]
F
150 °C, typ
I
0
10
-1
10
-2
10
0 0.5 1 1.5 2 2.5 3
Rev 1.3 page 6 2006-10-12
13 Avalanche characteristics 14 Typ. gate charge
V
IAS=f(tAV); RGS=25 Ω
parameter: T
10
j(start)
2
=f(Q
GS
parameter: V
); ID=-80 A pulsed
gate
DD
16
14
SPP/B80P06P
[A]
AV
-I
25 °C
100 °C
125 °C
12
10
[V]
8
GS
V
6
4
2
10
1
10
0
10
1
10
2
10
3
tAV [µs]
0
0 50 100 150 200
Q
15 Drain-source breakdown voltage 16 Gate charge waveforms
V
=f(Tj); ID=-250 µA
BR(DSS)
70
12 V
gate
30 V
48 V
[nC]
65
[V]
60
BR(DSS)
-V
55
50
-60 -20 20 60 100 140 180
Tj [°C]
Rev 1.3 page 7 2006-10-12
SPP/B80P06P
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2006.
All Rights Reserved.
Attention please!
The information given in this data sheet shall in no event be regarded as a guarantee of conditions or
characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values
stated herein and/or any information regarding the application of the device, Infineon Technologies hereby
disclaims any and all warranties and liabilities of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office (www.infineon.com ).
Warnings
Due to technical requirements components may contain dangerous substances. For information on the types in
question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure
of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support
devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may
be endangered.
Rev 1.3 page 8 2006-10-12
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