INFINEON SPPB80P06P User Manual

SPP/B80P06P

SIPMOS® Small-Signal-Transistor

Product Summary

Features

• P-Channel

• Enhancement mode

• Avalanche rated

• dv /dt rated

• 175°C operating temperature

P-TO263-3-2

• Pb-free lead finishing; RoHS compliant

Parameter Symbol Conditions Unit

Continuous drain current

I

D

TA=25 °C

1)

V

DS

R

DS(on),max

I

D

PG-TO220-3-1

Value

steady state

-80

-60 V

0.023

-80 A

Ω

A

Pulsed drain current

Avalanche energy, single pulse

Avalanche energy, periodic limited by
T

jmax

I

D,pulse

E

AS

E

AR

Reverse diode dv /dt dv /dt

Gate source voltage

Power dissipation

Operating and storage temperature

V

GS

P

tot

, T

T

j

ESD class

Soldering temperature

IEC climatic category; DIN IEC 68-1

1)

Current limited by bondwire; with an R

thJC

T

=100 °C

A

TA=25 °C

-320

ID=80 A, RGS=25 Ω

34

I

=80 A, VDS=48 V,

D

di /dt =-200 A/µs,

T

=175 °C

j,max

TA=25 °C

stg

"-55 ... +175"

260 °C

55/175/56

= 0.4 K/W the chip is able to carry ID= -91A

-68

824

-6

±20

375

mJ

kV/µs

V

W

°C

Rev 1.3 page 1 2006-10-12

SPP/B80P06P

.

Parameter Symbol Conditions Unit

Values

min. typ. max.

Thermal characteristics

Thermal resistance,
junction - case

Thermal resistance,
junction - ambient, leaded

SMD version, device on PCB:

Electrical characteristics, at T

R

thJC

R

thJA

R

thJA

=25 °C, unless otherwise specified

j

minimal footprint - - 62 K/W

2

cooling area

6 cm

- - 0.4 K/W

--62

2)

--40

Static characteristics

Drain-source breakdown voltage

Gate threshold voltage

Zero gate voltage drain current

Gate-source leakage current

Drain-source on-state resistance

Transconductance

2)

Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70µm thick) copper area for drain connection.

PCB is vertical without blown air

V

(BR)DSSVGS

V

GS(th)

I

DSS

I

GSS

R

DS(on)VGS

g

fs

=0 V, ID=-250 µA

VDS=VGS, ID=-

5500 µA

VDS=-60 V, VGS=0 V,
T

=25 °C

j

V

=-60 V, VGS=0 V,

DS

T

=150 °C

j

VGS=-20 V, VDS=0 V

=-10 V, ID=-64 A

|VDS|>2|ID|R

I

=-64 A

D

DS(on)max

-60 - - V

-2.1 3 -4

- -0.1 -1 µA

- -10 -100

- -10 -100 nA

-2123

,

18 36 - S

mΩ

Rev 1.3 page 2 2006-10-12

SPP/B80P06P

Parameter Symbol Conditions Unit

Values

min. typ. max.

Dynamic characteristics

Input capacitance

Output capacitance

Reverse transfer capacitance

Turn-on delay time

Rise time

Turn-off delay time

Fall time

C

C

C

t

t

t

t

iss

oss

rss

d(on)

r

d(off)

f

=0 V, VDS=-25 V,

V

GS

f =1 MHz

VDD=-30 V, VGS=­10 V, I
R

=1 Ω

G

=-64 A,

D

- 3900 5190 pF

- 1370 1820

- 610 920

- 21.5 32.2 ns

- 58.9 88

-4465

-2943

Gate Charge Characteristics

Gate to source charge

Gate to drain charge

Gate charge total

Q

gs

Q

gd

Q

g

V

=-48 V, ID=-80 A,

DD

V

=0 to -10 V

GS

- -21.2 -28.2 nC

- -58 -87

- -115 -153

Gate plateau voltage

Reverse Diode

Diode continuous forward current

Diode pulse current

Diode forward voltage

Reverse recovery time

Reverse recovery charge

V

plateau

I

S

I

S,pulse

V

SD

t

rr

Q

--6-V

- - -80 A

=25 °C

T

A

- - -320

VGS=0 V, IF=-80 A,
T

=25 °C

j

- -1.02 -1.6 V

- 117 175 ns

=30 V, IF=|IS|,

V

R

di

/dt =100 A/µs

rr

F

- 420 630 nC

Rev 1.3 page 3 2006-10-12