SIPMOS Power-Transistor
SPP18P06P
Features
·
P-Channel
·
Enhancement mode
·
Avalanche rated
·
dv/dt rated
·
175°C operating temperature
Type Package Ordering Code
SPP18P06P PG-TO220-3-1 Q67040-S4182
Maximum Ratings,at
T
= 25 °C, unless otherwise specified
j
Product Summary
Drain source voltage V
Drain-source on-state resistance
Continuous drain current A
V
DS
R
DS(on)
I
D
Pin 1 PIN 2/4 PIN 3
G D S
Parameter Symbol UnitValue
Continuous drain current
I
D
-60
0.13
-18.6
W
A
T
= 25 °C
C
T
= 100 °C
C
Pulsed drain current
T
= 25 °C
C
Avalanche energy, single pulse
I
= -18.6 A ,
D
V
DD
= -25 V,
R
GS
= 25
Avalanche energy, periodic limited by
I
= -18.6 A,
S
T
= 175 °C
jmax
V
= -48 V, di/dt = 200 A/µs,
DS
Gate source voltage
Power dissipation
T
= 25 °C
C
Operating and storage temperature
W
T
jmax
I
D puls
E
AS
E
AR
dv/d
V
GS
P
tot
T
,
j
t
T
stg
-18.6
-13.2
-74.4
150 mJ
8
6Reverse diode dv/dt
±20 V
80 W
-55...+175 °C
IEC climatic category; DIN IEC 68-1 55/175/56
kV/µs
Rev 1.2 Page 1
2005-02-11
Thermal Characteristics
Parameter Symbol UnitValues
min. max.typ.
Characteristics
SPP18P06P
R
thJC
Thermal resistance, junction - ambient, leaded SMD version, device on PCB:
R
R
thJA
thJA
@ min. footprint
@ 6 cm2 cooling area
Electrical Characteristics, at
1)
T
= 25 °C, unless otherwise specified
j
- 1.85-Thermal resistance, junction - case K/W
- 62
-
-
-
-
62
40
Parameter Symbol Values Unit
min. typ. max.
Static Characteristics
Drain- source breakdown voltage
V
= 0 V,
GS
Gate threshold voltage,
I
= -1 mA
D
I
= -250 µA
D
V
GS
=
V
DS
V
(BR)DSS
V
GS(th)
-60 - V-
-2.1 -3 -4
Zero gate voltage drain current
V
V
V
DS
DS
GS
= -60 V,
= -60 V,
= -20 V,
V
V
V
= 0 V,
GS
= 0 V,
GS
= 0 V
DS
T
= 25 °C
j
T
= 150 °C
j
Drain-source on-state resistance
V
= -10 V,
GS
1
Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
Rev 1.2 Page 2
I
= -13.2 A
D
I
DSS
I
GSS
R
DS(on)
-
-
-0.1
-10
-1
-100
- -10 -100Gate-source leakage current
- 0.1 0.13
2005-02-11
µA
nA
W
SPP18P06P
Electrical Characteristics, at
T
= 25 °C, unless otherwise specified
j
Parameter Symbol Values Unit
min. typ. max.
Dynamic Characteristics
Transconductance
V
³
2*
I
*
DS
R
D
DS(on)max
,
I
= -13.2 A
D
Input capacitance
V
V
= 0 V,
GS
= 0 V,
GS
V
= -25 V, f = 1 MHz
DS
V
= -25 V, f = 1 MHz
DS
Reverse transfer capacitance
V
= 0 V,
GS
V
= -25 V, f = 1 MHz
DS
Turn-on delay time
V
R
DD
G
= 2.7
= -30 V,
W
V
GS
= -10 V,
I
D
= -13.2 A,
g
fs
C
iss
C
oss
C
rss
t
d(on)
4
690 860 pF-
- 290230Output capacitance
-
- 18 ns12
S-8
12095
Rise time
V
R
DD
G
= 2.7
= -30 V,
W
V
GS
= -10 V,
Turn-off delay time
V
R
DD
G
= 2.7
= -30 V,
W
V
GS
= -10 V,
Fall time
V
R
DD
G
= 2.7
= -30 V,
W
V
GS
= -10 V,
I
= -13.2 A,
D
I
= -13.2 A,
D
I
= -13.2 A,
D
t
r
t
d(off)
t
f
- 8.75.8
-
24.5 37
- 11 16.5
Rev 1.2 Page 3
2005-02-11
SPP18P06P
Electrical Characteristics, at
Dynamic Characteristics
Gate to source charge
V
= -48 ,
DD
I
= -18.6 A
D
Gate to drain charge
V
= -48 V,
DD
I
= -18.6 A
D
Gate charge total
V
= -48 V,
DD
I
= -18.6 ,
D
V
= 0 to -10 V
GS
Gate plateau voltage
V
= -48 ,
DD
I
= -18.6 A
D
T
= 25 °C, unless otherwise specified
j
min. typ. max.
Q
gs
Q
gd
Q
g
V
(plateau)
UnitValuesSymbolParameter
-
nC6.64.4
9.3 14-
22
33-
- -5.56 - V
Parameter Symbol Values Unit
min. typ. max.
Reverse Diode
Inverse diode continuous forward current
T
= 25 °C
C
Inverse diode direct current,pulsed
T
= 25 °C
C
Inverse diode forward voltage
V
= 0 V,
GS
I
= -18.6 A
F
Reverse recovery time
V
= -30 V,
R
I
=
I
, d
i
F
S
/dt = 100 A/µs
F
Reverse recovery charge
V
= -30 V,
R
I
=
l
, d
i
F
S
/dt = 100 A/µs
F
I
S
I
SM
V
t
rr
Q
SD
rr
- - -18.6 A
- - -74.4
- -1 -1.33 V
- 70 105 ns
- 139 208 nC
Rev 1.2 Page 4
2005-02-11
SPP18P06P
SPP18P06P
SPP18P06P
SPP18P06P
SPP18P06P
Power dissipation
P
= f (
T
)
C
P
tot
tot
90
W
70
60
50
40
30
20
10
Drain current
I
= f (
T
-20
A
-16
-14
-12
-10
-8
-6
-4
-2
)
C
V
D
parameter:
D
I
GS
³
10 V
0
0 20 40 60 80 100 120 140 160°C190
Safe operating area
I
= f (
V
D
DS
)
parameter : D = 0 ,
2
-10
A
D
I
1
-10
I
/
S
D
V
=
)
n
o
(
S
D
R
0
-10
-1
-10
-10
T
= 25 °C
C
D
0
-10
0
0 20 40 60 80 100 120 140 160°C190
T
C
T
C
Transient thermal impedance
Z
= f (
t
1
0
10
p
single pulse
-7
10
)
t
/
T
p
D = 0.50
0.20
0.10
0.05
0.02
0.01
-6
-5
-4
-3
10
10
10
10
-2
0
s
10
t
p
thJC
parameter : D =
K/W
thJC
Z
10
10
10
10
10
10
-1
-2
-3
-4
t
= 29.0µs
p
100 µs
1 ms
10 ms
DC
1
V
V
DS
-10
2
Rev 1.2 Page 5
2005-02-11
SPP18P06P
SPP18P06P
SPP18P06P
Typ. output characteristic
I
= f (
V
);
T
t
p
= 80.00W
tot
=25°C
j
= 80 µs
l
k
j
D
DS
parameter:
-50
P
A
-40
-35
D
I
-30
-25
-20
-15
-10
-5
0
0 -1 -2 -3 -4 -5 -6 -7 -8
V
[V]
GS
a -4.0
b -4.5
c -5.0
i
d -5.5
h
e -6.0
g
f -6.5
g -7.0
f
h -7.5
i -8.0
e
j -9.0
k -10.0
d
l -20.0
c
b
a
Typ. drain-source-on-resistance
R
DS(on)
parameter:
DS(on)
R
V
-10
V
DS
= f (
I
)
D
V
GS
0.42
W
a
b
c
d
e
f
g
0.36
0.32
0.28
0.24
0.20
0.16
0.12
0.08
V
[V] =
GS
a
b
c
d
e
f
g
h
0.04
0.00
-4.5
-5.0
-5.5
-6.0
-6.5
-4.0
0 -4 -8 -12 -16 -20 -24 -28 -32A-38
-7.0
-7.5
-8.0
i
-9.0
h
i
j
k
l
j
k
l
-10.0
-20.0
I
D
Typ. transfer characteristics
V
³
2 x
I
x
DS
parameter:
-40
A
-30
-25
D
I
-20
-15
-10
-5
R
D
t
= 80 µs
p
DS(on)max
I
= f (
D
V
GS
)
Typ. forward transconductance
g
= f(
I
);
T
fs
parameter:
10
S
8
7
fs
6
g
5
4
3
2
1
=25°C
D
j
g
fs
0
0 -1 -2 -3 -4 -5 -6 -7 -8
V
-10
V
GS
Rev 1.2 Page 6
0
0 -5 -10 -15 -20
A
-30
I
D
2005-02-11
SPP18P06P
SPP18P06P
SPP18P06P
Drain-source on-state resistance
R
DS(on)
parameter :
DS(on)
R
0.38
W
0.32
0.28
0.24
0.20
0.16
0.12
0.08
0.04
= f (
T
)
j
I
= -13.2 A,
D
98%
typ
V
GS
= -10 V
Gate threshold voltage
V
parameter:
V
GS(th)
-5.0
V
-4.4
-4.0
-3.6
GS(th)
-3.2
-2.8
-2.4
-2.0
-1.6
-1.2
-0.8
-0.4
= f (
T
V
)
j
GS
=
V
DS
,
I
= -1 mA
D
max
typ
min
0.00
-60 -20 20 60 100 140
Typ. capacitances
C
= f (
V
)
DS
parameter:
10
pF
10
C
10
10
V
=0V, f=1 MHz
GS
4
3
2
1
0 -5 -10 -15 -20 -25
°C
200
T
j
0.0
-60 -20 20 60 100 140
V
200
T
j
Forward characteristics of reverse diode
I
= f (VSD)
F
parameter:
-10
A
-10
C
iss
C
oss
C
rss
V
-35
V
DS
F
I
-10
-1
-10
0.0 -0.4 -0.8 -1.2 -1.6 -2.0 -2.4
T
, tp = 80 µs
j
2
1
0
T
= 25 °C typ
j
T
= 175 °C typ
j
T
= 25 °C (98%)
j
T
= 175 °C (98%)
j
V
-3.0
V
SD
Rev 1.2 Page 7
2005-02-11
SPP18P06P
SPP18P06P
SPP18P06P
Avalanche energy
E
= f (
T
AS
para.:
160
mJ
120
AS
100
E
)
j
I
= -18.6 A ,
D
80
60
40
20
V
DD
= -25 V,
R
GS
= 25
Typ. gate charge
V
= f (
GS
Q
parameter:
-16
V
-12
GS
-10
V
-8
-6
-4
-2
)
Gate
I
= -18.6 A pulsed
D
0,2
V
DS max
0,8
V
DS max
0
25 45 65 85 105 125 145
Drain-source breakdown voltage
V
(BR)DSS
(BR)DSS
V
-72
V
-68
-66
-64
-62
-60
-58
= f (
T
)
j
°C
185
T
j
0
0 4 8 12 16 20 24 28
nC
Q
34
Gate
-56
-54
-60 -20 20 60 100 140
°C
200
T
j
Rev 1.2 Page 8
2005-02-11
SPP18P06P
Published by
Infineon Technologies AG,
Bereichs Kommunikation
St.-Martin-Strasse 53,
D-81541 München
© Infineon Technologies AG 1999
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as warranted
characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list).
Warnings
Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device
or system Life support devices or systems are intended to be implanted in the human body, or to support
and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health
of the user or other persons may be endangered.
Rev 1.2 Page 9
2005-02-11
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