INFINEON SPP17N80C3, SPA17N80C3 User Manual
SPP17N80C3
)
)
j
A
j
A
j
g
SPA17N80C3
Cool MOS™ Power Transistor
Feature
• New revolutionary high voltage technology
• Worldwide best R
DS(on
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
• Ultra low effective capacitances
• Improved transconductance
• PG-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)
Type Package Ordering Code
SPP17N80C3 PG-TO220 Q67040-S4353
in TO 220
Marking
17N80C3
V
DS
R
DS(on
I
D
PG-TO220-3-31 PG-TO220
1
P-TO220-3-31
3
2
800 V
0.29 Ω
17 A
SPA17N80C3 PG-TO220-3-31 SP000216353
Maximum Ratings
Parameter
Continuous drain current
T
= 25 °C
C
= 100 °C
T
C
Pulsed drain current, tp limited by T
Avalanche energy, single pulse
I
=3.4A, V
D
Avalanche energy, repetitive t
=17A, V
I
D
Avalanche current, repetitive t
DD
DD
=50V
=50V
limited by T
AR
limited by T
R
max
jmax
max
Symbol Value Unit
I
I
E
2)
E
I
Gate source voltage V
Gate source voltage AC (f >1Hz)
Power dissipation, T
= 25°C P
C
V
17N80C3
D
Dpuls
AS
AR
R
GS
GS
tot
SPP
SPA
A
17
11
17
11
1)
1)
51 51 A
670 670 mJ
0.5 0.5
17 17 A
±20 ±20 V
±30 ±30
208 42 W
Operating and storage temperature
Rev. 2.4 Page 1 2005-08-24
T
, T
st
-55...+150 °C
Maximum Ratings
)
S
SPP17N80C3
SPA17N80C3
Parameter
Drain Source voltage slope
V
= 640 V, I
DS
= 17 A, T
D
= 125 °C
j
Symbol Value Unit
dv/dt 50 V/ns
Thermal Characteristics
Parameter
Thermal resistance, junction - case
Symbol Values Unit
R
Thermal resistance, junction - case, FullPAK R
Thermal resistance, junction - ambient, leaded
R
Thermal resistance, junction - ambient, FullPAK R
SMD version, device on PCB:
R
@ min. footprint
@ 6 cm
2
cooling area
Soldering temperature, wavesoldering
1.6 mm (0.063 in.) from case for 10s
3)
T
4)
thJC
thJC_FP
thJA
thJA_FP
thJA
sold
min. typ. max.
- - 0.6 K/W
- - 3.6
- - 62
- - 80
-
-
-
35
62
-
- - 260 °C
Electrical Characteristics, at Tj=25°C unless otherwise specified
Parameter
Drain-source breakdown voltage
Drain-Source avalanche
Symbol Conditions Values Unit
V
(BR)DSS
V
(BR)DS
V
=0V, ID=0.25mA 800 - - V
GS
V
=0V, ID=17A - 870 -
GS
breakdown voltage
Gate threshold voltage V
Zero gate voltage drain current I
Gate-source leakage current I
Drain-source on-state resistance R
Gate input resistance
R
GS(th
DSS
GSS
DS(on)
G
ID=1000µA, VGS=V
VDS=800V, V
T
=25°C
j
T
=150°C
j
VGS=20V, V
V
=10V, ID=11A
GS
T
=25°C
j
T
=150°C
j
f=1MHz, open drain - 0.7 -
DS
D
=0V,
GS
=0V - - 100 nA
min. typ. max.
2.1 3 3.9
-
-
-
-
0.5
-
0.25
0.78
25
250
0.29
-
µA
Ω
Rev. 2.4 Page 2 2005-08-24
Electrical Characteristics
(
)
SPP17N80C3
SPA17N80C3
Parameter
Symbol Conditions Values Unit
Transconductance g
Input capacitance C
Output capacitance C
Reverse transfer capacitance C
Effective output capacitance,
5)
C
energy related
Effective output capacitance,
6)
C
time related
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
fs
iss
oss
rss
o(er)
o(tr)
d(on)
r
d(off)
f
V
≥2*ID*R
DS
I
=11A
D
VGS=0V, V
f=1MHz
V
=0V,
GS
V
=0V to 480V
DS
VDD=400V, V
I
=17A,
D
R
=4.7Ω, T
G
DS
DS(on)max
=25V,
=0/10V,
GS
=125°C
j
min. typ. max.
,
- 15 - S
- 2320 - pF
- 1250 -
- 60 -
- 59 -
- 124 -
- 25 - ns
- 15 -
- 72 82
- 6 9
Gate Charge Characteristics
Gate to source charge
Gate to drain charge Q
Gate charge total Q
Gate plateau voltage V
1
Limited only by maximum temperature
2
Repetitve avalanche causes additional power losses that can be calculated as P
3
Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
4
Soldering temperature for TO-263: 220°C, reflow
5
C
is a fixed capacitance that gives the same stored energy as C
o(er)
6
C
is a fixed capacitance that gives the same charging time as C
o(tr)
Q
gs
gd
g
plateau
V
=640V, ID=17A - 12 - nC
DD
- 46 -
V
=640V, ID=17A,
DD
V
=0 to 10V
GS
V
=640V, ID=17A - 6 - V
DD
while V
oss
while V
oss
- 91 177
=EAR*f.
AV
is rising from 0 to 80% V
DS
is rising from 0 to 80% V
DS
DSS
DSS
.
.
Rev. 2.4 Page 3 2005-08-24
Electrical Characteristics
SPP17N80C3
SPA17N80C3
Parameter
Inverse diode continuous
Symbol Conditions Values Unit
I
S
forward current
Inverse diode direct current,
I
SM
pulsed
Inverse diode forward voltage V
Reverse recovery time t
Reverse recovery charge Q
Peak reverse recovery current I
Peak rate of fall of reverse
SD
rr
rr
rrm
dirr/dt
recovery current
Typical Transient Thermal Characteristics
Symbol
SPP SPP
Value Unit Symbol Value Unit
SPA SPA
min. typ. max.
T
=25°C - - 17 A
C
- - 51
V
=0V, IF=I
GS
V
=400V, IF=IS ,
R
di
/dt=100A/µs
F
S
- 1 1.2 V
- 550 - ns
- 15 - µC
- 51 - A
T
=25°C - 1200 - A/µs
j
R
R
R
R
R
R
th1
th2
th3
th4
th5
th6
0.00812 0.00812 K/W C
0.016 0.016 C
0.031 0.031 C
0.114 0.16 C
0.135 0.324 C
0.059 2.522 C
T
R
j T
th1
P
(t)
tot
C
th1
C
th2
R
C
th,n
th,n
th1
th2
th3
th4
th5
th6
0.0003562 0.0003562 Ws/K
0.001337 0.001337
0.001831 0.001831
0.005033 0.005033
0.012 0.008657
0.092 0.412
External Heatsink
T
case
amb
Rev. 2.4 Page 4 2005-08-24
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