Final data
)
j
A
j
A
j
g
SPP08N80C3
SPA08N80C3
Cool MOS™ Power Transistor
Feature
• New revolutionary high voltage technology
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
• Ultra low effective capacitances
• Improved transconductance
• P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)
Type Package Ordering Code
SPP08N80C3 P-TO220-3-1 Q67040_S4436
SPA08N80C3 P-TO220-3-31 Q67040-S4437
Marking
08N80C3
08N80C3
V
DS
R
DS(on
I
D
P-TO220-3-31 P-TO220-3-1
P-TO220-3-31
3
2
1
800 V
0.65 Ω
8 A
Maximum Ratings
Parameter Symbol Value Unit
Continuous drain current
T
= 25 °C
C
T
= 100 °C
C
Pulsed drain current, tp limited by T
Avalanche energy, single pulse
I
=1.6A, V
D
Avalanche energy, repetitive t
I
=8A, V
D
Avalanche current, repetitive t
DD
DD
=50V
=50V
limited by T
AR
limited by T
R
max
jmax
max
2)
I
I
E
E
I
Gate source voltage V
Gate source voltage AC (f >1Hz)
Power dissipation, T
= 25°C P
C
V
D
D puls
AS
AR
R
GS
GS
tot
SPP
8
5.1
24 24 A
340 340 mJ
0.2 0.2
8 8 A
±20 ±20 V
±30 ±30
104 40 W
SPA
1)
8
5.1
A
1)
Operating and storage temperature T
Page 1
T
,
st
-55...+150 °C
2003-07-02
SPP08N80C3
)
Final data
Maximum Ratings
Parameter Symbol Value Unit
SPA08N80C3
Drain Source voltage slope
V
= 640 V, I
DS
= 8 A, T
D
= 125 °C
j
dv/dt 50 V/ns
Thermal Characteristics
Parameter Symbol Values Unit
min. typ. max.
Thermal resistance, junction - case
R
Thermal resistance, junction - case, FullPAK R
Thermal resistance, junction - ambient, leaded
R
Thermal resistance, junction - ambient, FullPAK R
Soldering temperature,
1.6 mm (0.063 in.) from case for 10s
3)
T
thJC
thJC_FP
thJA
thJA_FP
sold
- - 1.2 K/W
- - 3.8
- - 62
- - 80
- - 260 °C
Electrical Characteristics, at Tj=25°C unless otherwise specified
Parameter Symbol Conditions Values Unit
min. typ. max.
Drain-source breakdown voltage
Drain-Source avalanche
V
(BR)DSS
V
(BR)DS
V
=0V, ID=0.25mA 800 - - V
GS
V
=0V, ID=8A - 870 -
GS
breakdown voltage
Gate threshold voltage V
Zero gate voltage drain current I
Gate-source leakage current I
Drain-source on-state resistance R
Gate input resistance
R
GS(th
DSS
GSS
DS(on)
G
I
=470µA, V
D
VDS=800V, V
T
=25°C
j
T
=150°C
j
VGS=20V, V
V
=10V, ID=5.1A
GS
T
=25°C
j
T
=150°C
j
f=1MHz, open drain - 0.7 -
Page 2
GS=VDS
=0V,
GS
=0V - - 100 nA
DS
2.1 3 3.9
-
-
-
-
0.5
-
0.56
1.5
µA
20
200
Ω
0.65
-
2003-07-02
SPP08N80C3
(
)
Final data
Electrical Characteristics
Parameter Symbol Conditions Values Unit
min. typ. max.
SPA08N80C3
Transconductance g
Input capacitance C
Output capacitance C
Reverse transfer capacitance C
Effective output capacitance,
4)
C
energy related
Effective output capacitance,
5)
C
time related
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Gate Charge Characteristics
Gate to source charge Q
Gate to drain charge Q
Gate charge total Q
fs
iss
oss
rss
o(er)
o(tr)
d(on)
r
d(off)
f
gs
gd
g
VDS≥2*I
I
D
VGS=0V, V
f=1MHz
D*RDS(on)max
=5.1A
DS
=25V,
,
- 5.5 - S
- 1100 - pF
- 500 -
- 25 -
V
=0V,
GS
V
=0V to 480V
DS
- 31.8 -
- 70 -
VDD=400V, V
I
=8A,
D
R
=10Ω
G
=0/10V,
GS
- 25 - ns
- 15 -
- 65 75
- 7 10
V
=640V, ID=8A - 4.6 - nC
DD
- 21 -
V
=640V, ID=8A,
DD
V
=0 to 10V
GS
- 40 52
V
Gate plateau voltage V
1
Limited only by maximum temperature
2
Repetitve avalanche causes additional power losses that can be calculated as P
3
Soldering temperature for TO-263: 220°C, reflow
4
C
is a fixed capacitance that gives the same stored energy as C
o(er)
5
C
is a fixed capacitance that gives the same charging time as C
o(tr)
plateau
=640V, ID=8A - 6 - V
DD
=EAR*f.
AV
Page 3
oss
while V
oss
while V
is rising from 0 to 80% V
DS
is rising from 0 to 80% V
DS
2003-07-02
DSS
DSS
.
.
SPP08N80C3
Final data
Electrical Characteristics
Parameter Symbol Conditions Values Unit
min. typ. max.
T
Inverse diode continuous
I
S
=25°C - - 8 A
C
forward current
SPA08N80C3
Inverse diode direct current,
I
SM
- - 24
pulsed
V
Inverse diode forward voltage V
Reverse recovery time t
Reverse recovery charge Q
Peak reverse recovery current I
Peak rate of fall of reverse
dirr/dt
SD
rr
rr
rrm
=0V, IF=IS - 1 1.2 V
GS
V
=640V, IF=IS ,
R
di
/dt=100A/µs
F
- 550 - ns
- 7 - µC
- 24 - A
T
=25°C - 500 - A/µs
j
recovery current
Typical Transient Thermal Characteristics
Symbol Value Unit Symbol Value Unit
R
R
R
R
R
R
th1
th2
th3
th4
th5
th6
SPP SPP
0.017 0.017 K/W C
0.032 0.032 C
0.06 0.06 C
0.245 0.189 C
0.266 0.414 C
0.101 2.518 C
SPA SPA
th1
th2
th3
th4
th5
th6
0.0001741 0.0001741 Ws/K
0.0006598 0.0006598
0.0009193 0.0009193
0.002607 0.002607
0.005878 0.007619
0.051 0.412
T
R
j T
th1
P
(t)
tot
C
th1
C
th2
C
Page 4
R
th,n
th,n
T
case
amb
External Heatsink
2003-07-02
Final data
SPP08N80C3
SPA08N80C3
1 Power dissipation
P
= f (T
tot
tot
P
120
W
100
90
80
70
60
50
40
30
20
10
)
C
SPP08N80C3
0
0 20 40 60 80 100 120
°C
2 Power dissipation FullPAK
P
= f (T
tot
45
W
35
30
tot
P
25
20
15
10
160
T
C
)
C
5
0
0 20 40 60 80 100 120
°C
T
150
C
3 Safe operating area
ID = f ( VDS )
parameter : D = 0 , T
2
10
A
1
10
D
I
0
10
tp = 0.001 ms
tp = 0.01 ms
10
10
-1
-2
10
0
tp = 0.1 ms
tp = 1 ms
DC
10
C
1
=25°C
10
4 Safe operating area FullPAK
I
= f (V
D
parameter: D = 0, T
10
A
10
D
I
10
10
2
V
V
DS
10
3
10
-1
-2
2
1
0
10
DS
0
)
= 25°C
C
tp = 0.001 ms
tp = 0.01 ms
tp = 0.1 ms
tp = 1 ms
tp = 10 ms
DC
1
10
10
2
V
V
DS
10
3
Page 5
2003-07-02
Final data
SPP08N80C3
SPA08N80C3
5 Transient thermal impedance
Z
= f (tp)
thJC
parameter: D = tp/T
1
10
K/W
0
10
thJC
-1
Z
10
-2
10
10
10
-3
-4
10
-7
10
-6
10
-5
10
D = 0.5
D = 0.2
D = 0.1
D = 0.05
D = 0.02
D = 0.01
single pulse
-4
10
-3
6 Transient thermal impedance FullPAK
Z
= f (t
thJC
parameter: D = t
10
K/W
10
thJC
Z
10
10
10
-1
10
s
t
p
10
-1
-2
-3
-4
1
0
10
)
p
/t
p
D = 0.5
D = 0.2
D = 0.1
D = 0.05
D = 0.02
D = 0.01
single pulse
-7
-6
-5
-4
-3
-2
10
10
10
10
10
10
-1
t
1
10
s
p
7 Typ. output characteristic
I
= f (VDS); T
D
parameter: t
26
A
22
20
18
D
16
I
14
12
10
8
6
4
2
0
0 4 8 12 16 20
=25°C
j
= 10 µs, V
p
20V
8V
7V
GS
6.5V
6V
5.5V
5V
4V
V
V
DS
26
8 Typ. output characteristic
I
= f (VDS); T
D
parameter: t
13
A
11
10
9
D
8
I
7
6
5
4
3
2
1
0
0 4 8 12 16 20
=150°C
j
= 10 µs, V
p
GS
20V
6.5V
6V
5.5V
5V
4.5V
4V
V
V
26
DS
Page 6
2003-07-02
Final data
SPP08N80C3
SPA08N80C3
9 Typ. drain-source on resistance
R
DS(on)
parameter: Tj=150°C, V
R
=f(I
)
D
GS
4
Ω
4V
4.5V
3
DS(on)
2.5
2
1.5
1
0 2 4 6 8 10
5V
5.5V
6V
A
I
6.5V
D
20V
13
10 Drain-source on-state resistance
R
DS(on)
parameter : I
R
= f (Tj)
= 5.1 A, V
D
SPP08N80C3
3.6
Ω
2.8
2.4
DS(on)
2
1.6
1.2
0.8
0.4
0
-60 -20 20 60 100
98%
typ
= 10 V
GS
°C
180
T
j
11 Typ. transfer characteristics
ID= f ( VGS ); V
DS
≥ 2 x I
D
x R
DS(on)max
parameter: tp = 10 µs
26
A
22
20
18
D
16
I
14
12
10
8
6
4
2
0
0 2 4 6 8 10 12 14 16
25°C
150°C
V
V
GS
20
12 Typ. gate charge
V
GS
= f (Q
Gate
)
parameter: ID = 8 A pulsed
SPP08N80C3
16
V
12
0,2
V
GS
10
V
8
6
4
2
0
0 10 20 30 40 50
DS max
0,8 V
DS max
nC
Q
70
Gate
Page 7
2003-07-02
Final data
SPP08N80C3
SPA08N80C3
13 Forward characteristics of body diode
IF = f (VSD)
parameter: Tj , tp = 10 µs
2
SPP08N80C3
10
A
1
10
F
I
0
10
Tj = 25 °C typ
Tj = 150 °C typ
Tj = 25 °C (98%)
Tj = 150 °C (98%)
-1
10
0 0.4 0.8 1.2 1.6 2 2.4
3
V
V
SD
14 Avalanche SOA
IAR = f (tAR)
par.: Tj ≤ 150 °C
8
A
6
AR
5
I
4
3
2
T
-3
j(START)
-2
10
10
-1
1
0
10
=125°C
10 0 10 1 10
T
j(START)
=25°C
2
µs
t
AR
10
4
15 Avalanche energy
E
= f (T
AS
par.: I
mJ
AS
E
350
250
200
150
100
)
j
= 1.6 A, V
D
50
0
25 50 75 100
DD
= 50 V
°C
T
16 Drain-source breakdown voltage
V
(BR)DSS
(BR)DSS
V
150
j
= f (T
SPP08N80C3
980
V
940
920
900
880
860
840
820
800
780
760
740
720
-60 -20 20 60 100
)
j
°C
180
T
j
Page 8
2003-07-02
Final data
SPP08N80C3
SPA08N80C3
17 Avalanche power losses
P
= f (f )
AR
parameter: E
200
W
160
140
AR
P
120
100
80
60
40
20
0
4
10
=0.2mJ
AR
10
5
Hz
18 Typ. capacitances
C = f (V
parameter: V
10
pF
10
10
C
10
10
6
10
f
10
)
DS
=0V, f=1 MHz
GS
4
C
iss
3
2
1
0
-1
0 100 200 300 400 500 600
C
oss
C
rss
V
V
800
DS
19 Typ. C
E
=f(V
oss
9
µJ
7
6
oss
E
5
4
3
2
1
0
0 100 200 300 400 500 600
stored energy
oss
)
DS
V
V
800
DS
Page 9
2003-07-02
Final data
Definition of diodes switching characteristics
SPP08N80C3
SPA08N80C3
Page 10
2003-07-02
P-TO-220-3-1
±0.4
10
±0.2
3.7
SPP08N80C3
Final data
B
4.44
A
±0.13
1.27
SPA08N80C3
±0.6
±0.2
2.8
0.05
15.38
±0.5
C
±0.9
5.23
13.5
3x
±0.1
0.75
±0.22
1.17
2.54
2x
M
BA0.25
C
All metal surfaces tin plated, except area of cut.
Metal surface min. x=7.25, y=12.3
P-TO-220-3-31 (FullPAK)
0.5
2.51
±0.48
9.98
±0.1
±0.2
Please refer to mounting instructions (application note AN-TO220-3-31-01)
Page 11
2003-07-02
SPP08N80C3
Final data
Published by
Infineon Technologies AG,
Bereichs Kommunikation
St.-Martin-Strasse 53,
D-81541 München
© Infineon Technologies AG 1999
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as warranted
characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list).
Warnings
Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device
or system Life support devices or systems are intended to be implanted in the human body, or to support
and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health
of the user or other persons may be endangered.
SPA08N80C3
Page 12
2003-07-02
This datasheet has been download from:
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