INFINEON SPP06N60C3 User Manual

SPP06N60C3

CoolMOSTM Power Transistor

Features

• New revolutionary high voltage technology

• Ultra low gate charge

Product Summary

V

@ T

DS

R

DS(on),max

I

D

• Periodic avalanche rated

• High peak current capability

• Ultra low effective capacitances

• Extreme dv /dt rated

• Improved transconductance

Type Package Ordering Code Marking

j,max

650 V

0.75

6.2 A

PG-TO220-3-1

Ω

SPP06N60C3 PG-TO220-3-1 Q67040-S4629 06N60C3

Maximum ratings, at T

Parameter Symbol Conditions Unit

Continuous drain current

Pulsed drain current

Avalanche energy, single pulse

Avalanche energy, repetitive t

Avalanche current, repetitive t

Drain source voltage slope dv /dt

Gate source voltage

Power dissipation

=25 °C, unless otherwise specified

j

I

D

TC=25 °C

T

1)

AR

1),2)

1)

I

D,pulse

E

AS

E

AR

I

AR

TC=25 °C

ID=3.1 A, VDD=50 V

ID=6.2 A, VDD=50 V

I T

V

GS

V

GS

P

tot

static V

AC (f >1 Hz)

TC=25 °C

=100 °C

C

=6.2 A, VDS=480 V,

D

=125 °C

j

Value

6.2

3.9

18.6

200 mJ

0.5

6.2

50

±20

±30

74

A

V/ns

W

Operating and storage temperature

T

j

stg

-55 ... 150

°C

, T

Rev. 1.3 page 1 2007-08-28

SPP06N60C3

Parameter Symbol Conditions Unit

Values

min. typ. max.

Thermal characteristics

Thermal resistance, junction - case

R

thJC

R

thJA

leaded - - 62

- - 1.7 K/W

SMD version, device

Thermal resistance, junction ambient

R

thJA

on PCB, minimal footprint

--62

SMD version, device

2

cooling

-35-

- - 260 °C

Soldering temperature

4)

Electrical characteristics, at T

on PCB, 6 cm

3)

area

T

sold

=25 °C, unless otherwise specified

j

1.6 mm (0.063 in.) from case for 10 s

Static characteristics

Drain-source breakdown voltage

Avalanche breakdown voltage

Gate threshold voltage

Zero gate voltage drain current

Gate-source leakage current

Drain-source on-state resistance

Gate resistance

Transconductance

V

(BR)DSSVGS

V

(BR)DSVGS

V

GS(th)

I

DSS

I

GSS

R

DS(on)

R

G

g

fs

=0 V, ID=250 µA

=0 V, ID=6.2 A

VDS=VGS, ID=0.26 mA

VDS=600 V, VGS=0 V, T

=25 °C

j

V

=600 V, VGS=0 V,

DS

T

=150 °C

j

VGS=20 V, VDS=0 V

VGS=10 V, ID=3.9 A, T

=25 °C

j

V

=10 V, ID=3.9 A,

GS

T

=150 °C

j

600 - - V

- 700 -

2.1 3 3.9

- 0.1 1 µA

- - 100

- - 100 nA

- 0.68 0.75

- 1.82 -

f =1 MHz, open drain - 1 -

|VDS|>2|ID|R

I

=3.9 A

D

DS(on)max

,

- 5.6 - S

Ω

Rev. 1.3 page 2 2007-08-28

SPP06N60C3

Parameter Symbol Conditions Unit

Values

min. typ. max.

Dynamic characteristics

Input capacitance

Output capacitance

Reverse transfer capacitance

Effective output capacitance, energy

5)

6)

Rise time

Turn-off delay time

Fall time

C

t

iss

oss

rss

o(er)

o(tr)

d(on)

r

d(off)

f

=0 V, VDS=25 V,

V

GS

f =1 MHz

=0 V, VDS=0 V

V

GS

to 480 V

V

=480 V,

DD

V

=10 V, ID=6.2 A,

GS

=12 Ω

R

G

- 620 - pF

- 200 -

-17-

-28-

-47-

-7-ns

-12-

-52-

-10-

Gate Charge Characteristics

Gate to source charge

Gate to drain charge

Gate charge total

Gate plateau voltage

1)

Pulse width limited by maximum temperature T

2)

Repetitive avalanche causes additional power losses that can be calculated as PAV=EAR*f.

3)

Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain

Q

V

gs

gd

g

plateau

j,max

V

=480 V, ID=6.2 A,

DD

V

=0 to 10 V

GS

only

connection. PCB is vertical in still air.

4)

Soldering temperature for TO263: 220 °C, reflow

5)

C

is a fixed capacitance that gives the same stored energy as C

o(er)

6)

C

is a fixed capacitance that gives the same charging time as C

o(tr)

while VDS is rising from 0 to 80% V

oss

while VDS is rising from 0 to 80% V

oss

- 3.3 - nC

-12-

-2431

- 5.5 - V

DSS.

Rev. 1.3 page 3 2007-08-28

SPP06N60C3

Parameter Symbol Conditions Unit

Values

min. typ. max.

Reverse Diode

Diode continuous forward current

Diode pulse current

Diode forward voltage

Reverse recovery time

Reverse recovery charge

Peak reverse recovery current

I

S

I

S,pulse

V

SD

t

rr

Q

I

rrm

=25 °C

T

C

- - 18.6

- - 6.2 A

VGS=0 V, IF=6.2 A, T

=25 °C

j

- 0.97 1.2 V

- 400 - ns

V

=480 V, IF=IS,

rr

R

di

/dt =100 A/µs

F

- 3.5 - µC

-25-A

Typical Transient Thermal Characteristics

Symbol Value Unit Symbol Value Unit

typ. typ.

R

th1

0.0325 K/W C

th1

0.0000502 Ws/K

R

7)

R

th2

th3

th4

th5

C

thCA

th6

=0 K/W.

0.0448 C

0.251 C

0.31 C

0.301 C

th2

th3

th4

th5

C

th6 1.09

0.000303

0.000428

0.00243

0.00526

7)

models the additional heat capacitance of the package in case of non-ideal cooling. It is not needed if

Rev. 1.3 page 4 2007-08-28

INFINEON SPP06N60C3 User Manual

Specifications and Main Features

Frequently Asked Questions

User Manual