INFINEON SPN01N60C3 User Manual
SPN01N60C3
Cool MOS™ Power Transistor
Feature
• New revolutionary high voltage technology
• Ultra low gate charge
• Extreme dv/dt rated
• Ultra low effective capacitances
• Improved transconductance
Type Package Ordering Code
SPN01N60C3 SOT-223 Q67040-S4208
VDS @ T
Marking
01N60C3
R
DS(on)
I
jmax
650 V
6 Ω
D
0.3 A
SOT-223
4
3
2
1
VPS05163
Maximum Ratings
Parameter
Continuous drain current
= 25 °C
T
A
= 70 °C
T
A
Pulsed drain current, tp limited by T
= 25 °C
T
A
jmax
Symbol Value Unit
I
I
Gate source voltage static V
Gate source voltage AC (f >1Hz)
Power dissipation, T
= 25°C P
A
V
Operating and storage temperature T
D
D puls
GS
GS
tot
, T
j
stg
0.3
0.2
1.6
±20
±30
1.8 W
-55... +150
A
V
°C
Rev. 2.2 Page 1
2005-02-21
Maximum Ratings
)
SPN01N60C3
Parameter
Drain Source voltage slope
VDS = 480 V, ID = 0.8 A, Tj = 125 °C
Symbol Value Unit
dv/dt 50 V/ns
Thermal Characteristics
Parameter Symbol Values Unit
min. typ. max.
Thermal resistance, junction - soldering point R
SMD version, device on PCB:
R
@ min. footprint
@ 6 cm
2
cooling area
Soldering temperature,
1)
T
thJS
thJA
- - 260 °C
sold
- 35 - K/W
-
-
110
-
75
72
1.6 mm (0.063 in.) from case for 10s
Electrical Characteristics, at Tj=25°C unless otherwise specified
Parameter
Symbol Conditions Values Unit
min. typ. max.
Drain-source breakdown voltage
Drain-Source avalanche
V
V
breakdown voltage
Gate threshold voltage V
Zero gate voltage drain current I
Gate-source leakage current I
Drain-source on-state resistance R
(BR)DSS
(BR)DS
GS(th
DSS
GSS
DS(on)
V
=0V, ID=0.25mA 600 - - V
GS
V
=0V, ID=0.8A - 700 -
GS
I
=250µΑ, VGS=V
D
V
=600V, VGS=0V,
DS
T
=25°C,
j
T
=150°C
j
V
=30V, VDS=0V - - 100 nA
GS
V
=10V, ID=0.5A,
GS
T
=25°C
j
T
=150°C
j
2.3 3 3.7
DS
-
-
-
-
0.5
-
5.5
15.1
1
50
6
-
µA
Ω
Rev. 2.2 Page 2
2005-02-21
Electrical Characteristics , at Tj = 25 °C, unless otherwise specified
SPN01N60C3
Parameter
Symbol Conditions Values Unit
Transconductance g
Input capacitance C
Output capacitance C
Reverse transfer capacitance C
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Gate Charge Characteristics
Gate to source charge
Q
Gate to drain charge Q
Gate charge total Q
fs
iss
oss
rss
d(on)
r
d(off)
f
gs
gd
g
min. typ. max.
VDS≥2*ID*R
I
=0.2A
D
VGS=0V, VDS=25V,
f=1MHz
DS(on)max
,
- 0.45 - S
- 100 - pF
- 40 -
- 2.5 -
VDD=350V, VGS=0/10V,
=0.3A, RG=100Ω
I
D
- 45 - ns
- 30 -
- 60 90
- 30 45
VDD=350V, ID=0.3A - 0.9 - nC
- 2.2 -
VDD=350V, ID=0.3A,
=0 to 10V
V
GS
- 3.9 5
Gate plateau voltage V
1
Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
(plateau)
VDD=350V, ID=0.3A - 5.5 - V
Rev. 2.2 Page 3
2005-02-21
Loading...