SPN01N60C3
Cool MOS™ Power Transistor
Feature
• New revolutionary high voltage technology
• Ultra low gate charge
• Extreme dv/dt rated
• Ultra low effective capacitances
• Improved transconductance
Type Package Ordering Code
SPN01N60C3 SOT-223 Q67040-S4208
VDS @ T
Marking
01N60C3
R
DS(on)
I
jmax
650 V
6 Ω
D
0.3 A
SOT-223
4
3
2
1
VPS05163
Maximum Ratings
Parameter
Continuous drain current
= 25 °C
T
A
= 70 °C
T
A
Pulsed drain current, tp limited by T
= 25 °C
T
A
jmax
Symbol Value Unit
I
I
Gate source voltage static V
Gate source voltage AC (f >1Hz)
Power dissipation, T
= 25°C P
A
V
Operating and storage temperature T
D
D puls
GS
GS
tot
, T
j
stg
0.3
0.2
1.6
±20
±30
1.8 W
-55... +150
A
V
°C
Rev. 2.2 Page 1
2005-02-21
Maximum Ratings
)
SPN01N60C3
Parameter
Drain Source voltage slope
VDS = 480 V, ID = 0.8 A, Tj = 125 °C
Symbol Value Unit
dv/dt 50 V/ns
Thermal Characteristics
Parameter Symbol Values Unit
min. typ. max.
Thermal resistance, junction - soldering point R
SMD version, device on PCB:
R
@ min. footprint
@ 6 cm
2
cooling area
Soldering temperature,
1)
T
thJS
thJA
- - 260 °C
sold
- 35 - K/W
-
-
110
-
75
72
1.6 mm (0.063 in.) from case for 10s
Electrical Characteristics, at Tj=25°C unless otherwise specified
Parameter
Symbol Conditions Values Unit
min. typ. max.
Drain-source breakdown voltage
Drain-Source avalanche
V
V
breakdown voltage
Gate threshold voltage V
Zero gate voltage drain current I
Gate-source leakage current I
Drain-source on-state resistance R
(BR)DSS
(BR)DS
GS(th
DSS
GSS
DS(on)
V
=0V, ID=0.25mA 600 - - V
GS
V
=0V, ID=0.8A - 700 -
GS
I
=250µΑ, VGS=V
D
V
=600V, VGS=0V,
DS
T
=25°C,
j
T
=150°C
j
V
=30V, VDS=0V - - 100 nA
GS
V
=10V, ID=0.5A,
GS
T
=25°C
j
T
=150°C
j
2.3 3 3.7
DS
-
-
-
-
0.5
-
5.5
15.1
1
50
6
-
µA
Ω
Rev. 2.2 Page 2
2005-02-21
Electrical Characteristics , at Tj = 25 °C, unless otherwise specified
SPN01N60C3
Parameter
Symbol Conditions Values Unit
Transconductance g
Input capacitance C
Output capacitance C
Reverse transfer capacitance C
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Gate Charge Characteristics
Gate to source charge
Q
Gate to drain charge Q
Gate charge total Q
fs
iss
oss
rss
d(on)
r
d(off)
f
gs
gd
g
min. typ. max.
VDS≥2*ID*R
I
=0.2A
D
VGS=0V, VDS=25V,
f=1MHz
DS(on)max
,
- 0.45 - S
- 100 - pF
- 40 -
- 2.5 -
VDD=350V, VGS=0/10V,
=0.3A, RG=100Ω
I
D
- 45 - ns
- 30 -
- 60 90
- 30 45
VDD=350V, ID=0.3A - 0.9 - nC
- 2.2 -
VDD=350V, ID=0.3A,
=0 to 10V
V
GS
- 3.9 5
Gate plateau voltage V
1
Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
(plateau)
VDD=350V, ID=0.3A - 5.5 - V
Rev. 2.2 Page 3
2005-02-21
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
SPN01N60C3
Parameter
Inverse diode continuous
Symbol Conditions Values Unit
I
forward current
Inverse diode direct current,
I
pulsed
Inverse diode forward voltage V
Reverse recovery time t
Reverse recovery charge Q
S
SM
SD
rr
rr
min. typ. max.
TA=25°C - - 0.3 A
- - 1.6
VGS=0V, IF=IS - 0.85 1.05 V
VR=350V, IF=IS ,
/dt=100A/µs
di
F
- 200 340 ns
- 0.45 - µC
Rev. 2.2 Page 4
2005-02-21
SPN01N60C3
1 Power dissipation
P
= f (TA)
tot
SPN01N60C3
1.9
W
1.6
1.4
tot
1.2
P
1
0.8
0.6
0.4
0.2
0
0 20 40 60 80 100 120
°C
2 Safe operating area
I
= f ( VDS )
D
parameter :
1
10
D = 0 , T
A
0
10
D
I
-1
10
tp = 0.001 ms
-2
10
-3
10
160
T
A
10
0
tp = 0.01 ms
tp = 0.1 ms
tp = 1 ms
tp = 10ms
DC
10
=25°C
A
1
10
2
V
V
DS
10
3
3 Transient thermal impedance
Z
= f (tp)
thJC
parameter:
2
10
K/W
1
10
thJC
Z
0
10
-1
10
-2
10
-7
10
D = t
10
/T
p
D = 0.5
D = 0.2
D = 0.1
D = 0.05
D = 0.02
D = 0.01
single pulse
-6
-5
-4
-3
10
10
10
10
-2
10
4 Typ. output characteristic
I
= f (VDS); Tj=25°C
D
t
parameter:
2.5
A
D
I
1.5
1
0.5
-1
t
1
10
s
p
0
0 5 10 15
= 10 µs, V
p
GS
20V
10V
V
7V
6.5V
6V
5.5V
5V
V
25
DS
Rev. 2.2 Page 5
2005-02-21
SPN01N60C3
j
5 Drain-source on-state resistance
R
DS(on)
parameter :
R
= f (Tj)
I
= 0.2 A, VGS = 10 V
D
SPN01N60C3
34
Ω
28
24
DS(on)
20
16
12
8
4
0
-60 -20 20 60 100
98%
typ
°C
6 Typ. transfer characteristics
I
= f ( VGS ); V
D
DS
≥ 2 x I
D
x R
DS(on)max
parameter: tp = 10 µs
2.5
A
D
I
1.5
1
0.5
180
T
j
0
0 4 8 12
V
GS
20
V
7 Typ. gate charge
f (Q
=
V
GS
parameter:
SPN01N60C3
16
V
12
GS
V
0.2 V
10
0.8 V
8
6
4
2
0
0 1 2 3 4
)
Gate
I
= 0.3 A pulsed
D
DS max
DS max
nC
Q
Gate
5.5
8 Forward characteristics of body diode
I
= f (VSD)
F
T
parameter:
1
SPN01N60C3
10
A
0
10
F
I
-1
10
-2
10
0 0.4 0.8 1.2 1.6 2 2.4
, tp = 10 µs
Tj = 25 °C typ
Tj = 150 °C typ
Tj = 25 °C (98%)
Tj = 150 °C (98%)
3
V
V
SD
Rev. 2.2 Page 6
2005-02-21
SPN01N60C3
9 Drain-source breakdown voltage
V
(BR)DSS
(BR)DSS
V
= f (Tj)
SPN01N60C3
720
V
680
660
640
620
600
580
560
540
-60 -20 20 60 100
°C
10 Typ. capacitances
C = f (V
parameter: V
10
pF
10
C
10
180
T
j
10
)
DS
=0V, f=1 MHz
GS
3
C
2
1
0
0 10 20 30 40 50 60 70 80
iss
C
oss
C
rss
V
V
100
DS
Definition of diodes switching characteristics
Rev. 2.2 Page 7
2005-02-21
SOT-223
SPN01N60C3
Rev. 2.2 Page 8
2005-02-21
SPN01N60C3
Published by
Infineon Technologies AG,
81726 Munich, Germany
© Infineon Technologies AG 2000
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as warranted
characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list).
Warnings
Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device
or system Life support devices or systems are intended to be implanted in the human body, or to support
and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health
of the user or other persons may be endangered.
Rev. 2.2 Page 9
2005-02-21
Loading...