INFINEON SPD06N80C3 User Manual
SPD06N80C3
)
)
j
A
j
A
j
g
Cool MOS™ Power Transistor
Feature
• New revolutionary high voltage technology
• Worldwide best R
DS(on
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
Type Package Ordering Code
SPD06N80C3 PG-TO252 Q67040-S4352
in TO252
Marking
06N80C3
V
R
DS(on
DS
I
800 V
0.9 Ω
D
6 A
PG-TO252
Maximum Ratings, at T
Parameter
Continuous drain current
T
= 25 °C
C
T
= 100 °C
C
Pulsed drain current, tp limited by T
Avalanche energy, single pulse
I
=1.2A, V
D
DD
=50V
Avalanche energy, repetitive t
I
=6A, V
D
DD
=50V
Avalanche current, repetitive t
= 25°C, unless otherwise specified
C
Symbol Value Unit
I
max
I
E
1)
limited by T
AR
limited by T
R
jmax
max
E
I
Gate source voltage V
Power dissipation, T
= 25°C
C
P
Operating and storage temperature T
D
Dpuls
AS
AR
R
GS
tot
, T
A
6
3.8
18
230 mJ
0.2
6 A
±20
V
83 W
st
-55... +150
°C
Rev. 2.4 Page 1
2008-04-11
Maximum Ratings
)
SPD06N80C3
Parameter
Drain Source voltage slope
V
= 640 V, I
DS
= 6 A, T
D
= 125 °C
j
Symbol Value Unit
dv/dt 50 V/ns
Thermal Characteristics
Parameter Symbol Values Unit
min. typ. max.
Thermal resistance, junction - case
Thermal resistance, junction - ambient, leaded
SMD version, device on PCB:
@ min. footprint
@ 6 cm
2
cooling area
2)
Soldering temperature, reflow soldering, MSL3
1.6 mm (0.063 in.) from case for 10s
3)
R
R
R
T
thJC
thJA
thJA
sold
- - 1.5 K/W
- - 62
-
-
-
-
75
50
- - 260 °C
Electrical Characteristics
Parameter
Symbol Conditions Values Unit
Drain-source breakdown voltage
Drain-Source avalanche
V
V
breakdown voltage
Gate threshold voltage V
Zero gate voltage drain current I
Gate-source leakage current I
Drain-source on-state resistance R
Gate input resistance
R
(BR)DSS
(BR)DS
GS(th
DSS
GSS
DS(on)
G
min. typ. max.
V
=0V, ID=0.25mA 800 - - V
GS
V
=0V, ID=6A - 870 -
GS
I
=250µΑ, VGS=V
D
VDS=800V, V
T
=25°C,
j
T
=150°C
j
VGS=20V, V
V
=10V, ID=3.8A,
GS
T
=25°C
j
T
=150°C
j
f=1MHz, open Drain - 0.7 -
=0V,
GS
=0V - - 100 nA
DS
2.1 3 3.9
DS
-
-
-
-
0.5
-
0.78
2.1
10
100
0.9
µA
Ω
-
Rev. 2.4 Page 2
2008-04-11
SPD06N80C3
j
(
)
Electrical Characteristics , at T
Parameter
Symbol Conditions Values Unit
Transconductance g
Input capacitance C
Output capacitance C
Reverse transfer capacitance C
Effective output capacitance,
4)
C
energy related
Effective output capacitance,
5)
C
time related
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
= 25 °C, unless otherwise specified
min. typ. max.
V
fs
iss
oss
rss
o(er)
o(tr)
d(on)
r
d(off)
f
≥2*ID*R
DS
I
=3.8A
D
VGS=0V, V
f=1MHz
V
=0V,
GS
V
=0V to 480V
DS
VDD=400V, V
I
=6A, R
D
T
=125°C
j
DS
=15Ω,
G
DS(on)max
=25V,
GS
,
=0/10V,
- 4 - S
- 785 - pF
- 390 -
- 20 -
- 22 - pF
- 42 -
- 25 - ns
- 15 -
- 65 75
- 8 11
Gate Charge Characteristics
Gate to source charge
Gate to drain charge Q
Gate charge total Q
Gate plateau voltage V
1
Repetitve avalanche causes additional power losses that can be calculated as P
2
Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
3
Soldering temperature for TO-263: 220°C, reflow
4
C
is a fixed capacitance that gives the same stored energy as C
o(er)
5
C
is a fixed capacitance that gives the same charging time as C
o(tr)
Q
gs
gd
g
plateau
V
=640V, ID=6A - 3.3 - nC
DD
- 14 -
V
=640V, ID=6A,
DD
V
=0 to 10V
GS
V
=640V, ID=6A - 6 - V
DD
while V
oss
while V
oss
- 27 35
=EAR*f.
AV
is rising from 0 to 80% V
DS
is rising from 0 to 80% V
DS
DSS
DSS
.
.
Rev. 2.4 Page 3
2008-04-11
SPD06N80C3
j
Electrical Characteristics, at T
Parameter
Inverse diode continuous
= 25 °C, unless otherwise specified
Symbol Conditions Values Unit
I
S
forward current
Inverse diode direct current,
I
SM
pulsed
Inverse diode forward voltage V
Reverse recovery time t
Reverse recovery charge Q
Peak reverse recovery current I
Peak rate of fall of reverse
SD
rr
rr
rrm
dirr/dt
recovery current
Typical Transient Thermal Characteristics
min. typ. max.
T
=25°C - - 6 A
C
- - 18
V
=0V, IF=I
GS
V
=400V, IF=IS ,
R
di
/dt=100A/µs
F
S
- 1 1.2 V
- 520 - ns
- 5 - µC
- 18 - A
- 400 - A/µs
Symbol Value Unit Symbol Value Unit
typ. typ.
Thermal resistance
R
th1
R
th2
R
th3
R
th4
R
th5
R
th6
P
tot
0.024 K/W
0.024
0.086
0.309
0.317
0.112
T
R
j T
th1
(t)
C
th1
C
th2
Thermal capacitance
C
th1
C
th2
C
th3
C
th4
C
th5
C
th6
R
th,n
C
th,n
T
case
amb
External Heatsink
0.0001172
0.000447
0.0006303
0.001828
0.004786
0.046
Ws/K
Rev. 2.4 Page 4
2008-04-11
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