INFINEON SPD06N60C3 User Manual

SPD06N60C3

CoolMOSTM Power Transistor

Features

• New revolutionary high voltage technology

• Ultra low gate charge

• Periodic avalanche rated

• High peak current capability

• Ultra low effective capacitances

• Extreme dv /dt rated

• Improved transconductance

Product Summary

VDS@ T

R

DS(on),max

I

D

j,max

650 V

0.75

6.2 A

PG-TO252

Ω

Type Package Ordering Code Marking

SPD06N60C3 PG-TO252 Q67040-S4630 06N60C3

Maximum ratings, at T

Parameter Symbol Conditions Unit

Continuous drain current

Pulsed drain current

Avalanche energy, single pulse

Avalanche energy, repetitive t

Avalanche current, repetitive t

Drain source voltage slope dv /dt

Gate source voltage

=25 °C, unless otherwise specified

j

I

D

TC=25 °C

T

1)

AR

1),2)

1)

I

D,pulse

E

AS

E

AR

I

AR

TC=25 °C

ID=3.1 A, VDD=50 V

ID=6.2 A, VDD=50 V

I T

V

GS

static V

=100 °C

C

=6.2 A, VDS=480 V,

D

=125 °C

j

Value

6.2

3.9

18.6

200 mJ

0.5

6.2

50

±20

A

V/ns

V

GS

Power dissipation

Operating and storage temperature

Reverse diode dv/dt dv/dt 15 V/ns

7)

P

tot

T

, T

j

AC (f >1 Hz)

TC=25 °C

stg

±30

74

-55 ... 150

W

°C

Rev. 1.5 Page 1 2008-04-11

SPD06N60C3

Parameter Symbol Conditions Unit

Values

min. typ. max.

Thermal characteristics

Thermal resistance, junction - case

R

thJC

- - 1.7 K/W

SMD version, device

Thermal resistance, junction ambient

Soldering temperature *)

Electrical characteristics, at T

R

thJA

T

sold

=25 °C, unless otherwise specified

j

on PCB, minimal footprint

SMD version, device on PCB, 6 cm

3)

area

2

cooling

1.6 mm (0.063 in.) from case for 10 s

--75

-50-

- - 260 °C

Static characteristics

Drain-source breakdown voltage

Avalanche breakdown voltage

Gate threshold voltage

Zero gate voltage drain current

Gate-source leakage current

Drain-source on-state resistance

Gate resistance

V

(BR)DSSVGS

V

(BR)DSVGS

V

GS(th)

I

DSS

I

GSS

R

DS(on)

R

G

=0 V, ID=250 µA

=0 V, ID=6.2 A

VDS=VGS, ID=0.26 mA

VDS=600 V, VGS=0 V, T

=25 °C

j

=600 V, VGS=0 V,

V

DS

T

=150 °C

j

VGS=20 V, VDS=0 V

VGS=10 V, ID=3.9 A, T

=25 °C

j

V

=10 V, ID=3.9 A,

GS

T

=150 °C

j

f =1 MHz, open drain

600 - - V

- 700 -

2.1 3 3.9

- 0.1 1 µA

- - 100

- - 100 nA

- 0.68 0.75

- 1.82 -

-1-

Ω

Transconductance

g

fs

|VDS|>2|ID|R

I

=3.9 A

D

DS(on)max

,

- 5.6 - S

*) reflow soldering, MSL3

Rev. 1.5 Page 2 2008-04-11

SPDT06N60C3

y

Parameter Symbol Conditions Unit

Values

min. typ. max.

namic characteristics

D

Input capacitance

Output capacitance

Reverse transfer capacitance

Effective output capacitance, energy related

4)

Effective output capacitance, time related

5)

Turn-on delay time

Rise time

Turn-off delay time

Fall time

C

t

iss

oss

rss

o(er)

o(tr)

d(on)

r

d(off)

f

=0 V, VDS=25 V,

V

GS

f =1 MHz

V

=0 V, VDS=0 V

GS

to 480 V

V

=480 V,

DD

V

=10 V, ID=6.2 A,

GS

R

=12 Ω

G

- 620 - pF

- 200 -

-17-

-28-

-47-

-7-ns

-12-

-52-

-10-

Gate Charge Characteristics

Gate to source charge

Gate to drain charge

Gate charge total

Gate plateau voltage

1)

Pulse width limited by maximum temperature T

2)

Repetitive avalanche causes additional power losses that can be calculated as PAV=EAR*f.

3)

Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain

connection. PCB is vertical in still air.

4)

C

is a fixed capacitance that gives the same stored energy as C

o(er)

5)

C

is a fixed capacitance that gives the same charging time as C

o(tr)

7)

ISD<=ID, di/dt<=400A/us, V

Identical low-side and high-side switch.

DClink

Q

V

=400V, V

gs

gd

g

plateau

peak<VBR, DSS

j,max

V

DD

V

GS

only

=480 V, ID=6.2 A, =0 to 10 V

while VDS is rising from 0 to 80% V

oss

while VDS is rising from 0 to 80% V

oss

, Tj<T

j,max

.

- 3.3 - nC

-12-

-2431

- 5.5 - V

DSS.

Rev. 1.5 Page 3 2008-04-11

SPD06N60C3

y

Parameter Symbol Conditions Unit

Values

min. typ. max.

Reverse Diode

Diode continuous forward current

Diode pulse current

Diode forward voltage

Reverse recovery time

Reverse recovery charge

Peak reverse recovery current

T

pical Transient Thermal Characteristics

I

S

I

S,pulse

V

SD

t

rr

Q

rr

I

rrm

T

=25 °C

C

VGS=0 V, IF=6.2 A, T

=25 °C

j

=480 V, IF=IS,

V

R

di

/dt =100 A/µs

F

- - 6.2 A

- - 18.6

- 0.97 1.2 V

- 400 - ns

- 3.5 - µC

-25-A

Symbol Value Unit Symbol Value Unit

typ. typ.

R

th1

R

th2

R

th3

R

th4

R

th5

0.0325 K/W C

0.0448 C

0.251 C

0.31 C

0.231 C

th1

th2

th3

th4

th5

C

th6

0.0000502 Ws/K

0.000303

0.000428

0.00243

0.00344

6)

0.198

6)

C

models the additional heat capacitance of the package in case of non-ideal cooling. It is not needed if

th6

R

=0 K/W.

thCA

Rev. 1.5 Page 4 2008-04-11