INFINEON SPD04N8C3 User Manual

SPD04N80C3

j

A

j

A

j

g

Cool MOS™ Power Transistor

Feature

• New revolutionary high voltage technology

• Ultra low gate charge

• Periodic avalanche rated

• Extreme dv/dt rated

• Ultra low effective capacitances

• Improved transconductance

Type Package Ordering Code

SPD04N80C3 PG-TO252 Q47040-S4563

Marking

04N80C3

V

R

DS(on)

I

DS

D

800 V

1.3 Ω

4 A

PG-TO252

Maximum Ratings, at T

Parameter

Continuous drain current

T

= 25 °C

C

T

= 100 °C

C

Pulsed drain current, tp limited by T

Avalanche energy, single pulse

I

=0.8A, V

D

DD

=50V

Avalanche energy, repetitive t

I

=4A, V

D

DD

=50V

Avalanche current, repetitive t

= 25°C, unless otherwise specified

C

Symbol Value Unit

I

max

I

E

1)

limited by T

AR

limited by T

R

jmax

max

E

I

Gate source voltage V
Power dissipation, T

= 25°C

C

P

Operating and storage temperature T

D

Dpuls

AS

AR

R

GS
tot

, T

A

4

2.5

12

170 mJ

0.1

4 A

±20

V

63 W

st

-55... +150

°C

Rev. 2.4 Page 1

2008-04-11

Maximum Ratings

SPD04N80C3

Parameter

Drain Source voltage slope

V

= 640 V, I

DS

= 4 A, T

D

= 125 °C

j

Symbol Value Unit

dv/dt 50 V/ns

Thermal Characteristics

Parameter Symbol Values Unit

min. typ. max.

Thermal resistance, junction - case

SMD version, device on PCB:

@ min. footprint

@ 6 cm

2

cooling area

2)

Soldering temperature, reflow soldering, MSL3

1.6 mm (0.063 in.) from case for 10s

3)

R

R

T

thJC

thJA

sold

- - 2 K/W

-

-

-

-

75

50

- - 260 °C

Electrical Characteristics

Parameter

Symbol Conditions Values Unit

min. typ. max.

Drain-source breakdown voltage

Drain-Source avalanche

V

V

breakdown voltage

Gate threshold voltage V

Zero gate voltage drain current I

Gate-source leakage current I

Drain-source on-state resistance R

Gate input resistance

R

(BR)DSS

(BR)DS

GS(th)

DSS

GSS

DS(on)

G

V

=0V, ID=0.25mA 800 - - V

GS

V

=0V, ID=4A - 870 -

GS

I

=240µΑ, VGS=V

D

VDS=800V, V

=25°C,

T

j

=150°C

T

j

VGS=20V, V
V

=10V, ID=2.5A,

GS

T

=25°C

j

=150°C

T

j

f=1MHz, open Drain - 0.7 -

=0V,

GS

=0V - - 100 nA

DS

2.1 3 3.9

DS

-

-

-

-

0.5

-

1.1

3

10

100

1.3

µA

Ω

-

Rev. 2.4 Page 2

2008-04-11

SPD04N80C3

j

Electrical Characteristics , at T

Parameter

Symbol Conditions Values Unit

Transconductance g

Input capacitance C
Output capacitance C
Reverse transfer capacitance C

Effective output capacitance,

4)

C

energy related

Effective output capacitance,

5)

C

time related

Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t

= 25 °C, unless otherwise specified

min. typ. max.

V

fs

iss
oss
rss

o(er)

o(tr)

d(on)
r
d(off)
f

≥2*ID*R

DS

I

=2.5A

D

VGS=0V, V
f=1MHz

V

=0V,

GS

V

=0V to 480V

DS

VDD=400V, V

I

=4A, R

D

=22Ω

G

DS

DS(on)max

=25V,

GS

,

=0/10V,

- 3 - S

- 570 - pF

- 240 -

- 12 -

- 15.6 - pF

- 33.7 -

- 25 - ns

- 15 -

- 65 75

- 12 16

Gate Charge Characteristics

Gate to source charge
Gate to drain charge Q

Gate charge total Q

Gate plateau voltage V

1

Repetitve avalanche causes additional power losses that can be calculated as P

2

Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
3

Soldering temperature for TO-263: 220°C, reflow
4

is a fixed capacitance that gives the same stored energy as C

C

o(er)

5

is a fixed capacitance that gives the same charging time as C

C

o(tr)

Q

gs
gd

g

(plateau)

V

=640V, ID=4A - 2.4 - nC

DD

- 11 -

V

=640V, ID=4A,

DD

=0 to 10V

V

GS

V

=640V, ID=4A - 6 - V

DD

while V

oss

while V

oss

- 20 26

=EAR*f.

AV

is rising from 0 to 80% V

DS

is rising from 0 to 80% V

DS

DSS

DSS

.

.

Rev. 2.4 Page 3

2008-04-11

SPD04N80C3

Electrical Characteristics, at T

Parameter

Inverse diode continuous

= 25 °C, unless otherwise specified

j

Symbol Conditions Values Unit

I

S

forward current

Inverse diode direct current,

I

SM

pulsed

Inverse diode forward voltage V

Reverse recovery time t
Reverse recovery charge Q
Peak reverse recovery current I

Peak rate of fall of reverse

SD

rr

rr

rrm

dirr/dt

recovery current

Typical Transient Thermal Characteristics

min. typ. max.

T

=25°C - - 4 A

C

- - 12

V

=0V, IF=I

GS

V

=640V, IF=IS ,

R

di

/dt=100A/µs

F

S

- 1 1.2 V

- 520 - ns

- 4 - µC

- 12 - A

- 300 - A/µs

Symbol

Thermal resistance

R

th1

R

th2

R

th3

R

th4

R

th5

R

th6

P

tot

Value Unit Symbol Value Unit

typ. typ.

Thermal capacitance

0.033 K/W

0.063

0.113

0.432

0.423

0.14

T

R

j T

th1

(t)

C

th1

C

th2

C

th1

C

th2

C

th3

C

th4

C

th5

C

th6

R

th,n

C

th,n

T

case

amb

0.00008691

0.0003336

0.0004755

0.001405

0.003503

0.036

External Heatsink

Ws/K

Rev. 2.4 Page 4

2008-04-11