Preliminary data
j
)
j
A
j
A
t
j
g
Cool MOS™====Power Transistor
Feature
•=New revolutionary high voltage technology
• Ultra low gate charge
•=Periodic avalanche rated
• Extreme dv/dt rated
SPD02N60C3
SPU02N60C3
Product Summary
VDS @ T
R
DS(on
I
D
max
650 V
1.8 A
3 Ω
•=Ultra low effective capacitances
P-TO252P-TO251
•=150 °C operating temperature
Type Package Ordering Code
SPD02N60C3 P-TO252 Q67040-S4420
SPU02N60C3 P-TO251 -
Marking
02N60C3
02N60C3
Maximum Ratings, at TC = 25°C, unless otherwise specified
Parameter Symbol Value Unit
Continuous drain current
TC = 25 °C
T
= 100 °C
C
Pulsed drain current, tp limited by T
Avalanche energy, single pulse
ID=0.9A, VDD=50V
max
I
D
I
D puls
E
AS
1.8
1.1
5.4
50 mJ
A
Avalanche energy, repetitive tAR limited by T
I
=1.8A, VDD=50V
D
Avalanche current, repetitive t
limited by T
R
Reverse diode dv/dt
IS=1.8A, VDS <=VDD, di/dt=100A/µs, T
jmax
=150°C
Gate source voltage static V
Gate source voltage AC (f >1Hz) V
Power dissipation, T
= 25°C P
C
Operating and storage temperature T
Page 1
jmax
max
1)
E
AR
I
R
dv/dt
GS
GS
to
T
,
st
0.07
1.8 A
6
±20
±30
25 W
-55... +150
V/ns
V
°C
2002-06-10
SPD02N60C3
A
Preliminary data
Thermal Characteristics
Parameter Symbol Values Unit
min. typ. max.
Characteristics
SPU02N60C3
Thermal resistance, junction - case R
Thermal resistance, junction - ambient, leaded R
SMD version, device on PCB:
R
@ min. footprint
@ 6 cm2 cooling area
2)
Linear derating factor
Soldering temperature,
T
thJC
thJ
thJA
sold
- - 5 K/W
- - 75
-
-
- - 0.2
- - 260 °C
1.6 mm (0.063 in.) from case for 10s
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Static Characteristics
Drain-source breakdown voltage
VGS=0V, ID=0.25mA
Drain-source avalanche breakdown voltage
VGS=0V, ID=0.25A
V
(BR)DSS
V
(BR)DS
600 - - V
- 700 -
-
-
75
50
W/K
Gate threshold voltage, VGS = V
I
= 80 µA
D
Zero gate voltage drain current
VDS = 600 V, VGS = 0 V, Tj = 25 °C
V
= 600 V, VGS = 0 V, Tj = 150 °C
DS
Gate-source leakage current
VGS=30V, VDS=0V
Drain-source on-state resistance
VGS=10V, ID=1.1A, Tj=25°C
V
=10V, ID=1.1A, Tj=150°C
GS
Gate input resistance
DS
V
GS(th)
I
DSS
I
GSS
R
DS(on)
R
G
2.1 3 3.9
-
-
0.5
-
1
50
- - 100 nA
-
-
2.7
6
3
6.7
- 9 -
f = 1 MHz, open drain
1
Repetitve avalanche causes additional power losses that can be calculated as P
2
Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
AV=EAR
*f.
µA
Ω
Page 2
2002-06-10
SPD02N60C3
)
)
f
g
g
(
)
Preliminary data
Electrical Characteristics , at Tj = 25 °C, unless otherwise specified
Parameter Symbol Conditions Values Unit
min. typ. max.
Characteristics
SPU02N60C3
Transconductance g
Input capacitance C
Output capacitance C
Reverse transfer capacitance C
Effective output capacitance,
1)
energy related
Effective output capacitance,
2)
time related
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Gate Charge Characteristics
Gate to source charge
Q
Gate to drain charge Q
Gate charge total Q
C
C
d(on
r
d(off
g
fs
iss
oss
rss
o(er)
o(tr)
s
d
VDS≥2*ID*R
I
=1.1A
D
VGS=0V, VDS=25V,
f=1MHz
DS(on)max
,
- 1.75 - S
- 200 - pF
- 90 -
- 4 -
VGS=0V,
V
=0V to 480V
DS
- 8.1 - pF
- 15.7 -
VDD=350V, VGS=0/10V,
I
=1.8A, RG=25Ω
D
- 6 - ns
- 3 -
- 68 70
- 12 30
VDD=420V, ID=1.8A - 1.6 - nC
- 3.8 -
VDD=420V, ID=1.8A,
V
=0 to 10V
GS
- 9.5 12.5
Gate plateau voltage V
1
C
is a fixed capacitance that gives the same stored energy as C
o(er)
2
C
is a fixed capacitance that gives the same charging time as C
o(tr)
plateau
VDD=420V, ID=1.8A - 5.5 - V
while VDS is rising from 0 to 80% V
oss
while VDS is rising from 0 to 80% V
oss
Page 3
2002-06-10
DSS
DSS
.
.
SPD02N60C3
Preliminary data
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter Symbol Conditions Values Unit
min. typ. max.
Characteristics
SPU02N60C3
Inverse diode continuous
I
S
TC=25°C - - 1.8 A
forward current
Inverse diode direct current,
I
SM
- - 5.4
pulsed
Inverse diode forward voltage V
Reverse recovery time t
Reverse recovery charge Q
Peak reverse recovery current I
Peak rate of fall of reverse
dirr/dt
SD
rr
rr
rrm
VGS=0V, IF=IS - 1 1.2 V
VR=420V, IF=IS ,
di
/dt=100A/µs
F
- 200 350 ns
- 1.3 - µC
- 9 - A
- - 200 A/µs
recovery current
Transient Thermal Characteristics
Symbol Value Unit Symbol Value Unit
typ. typ.
Thermal resistance
Thermal capacitance
R
R
R
R
R
R
th1
th2
th3
th4
th5
th6
0.101 K/W
0.207
0.311
0.583
0.501
0.135
T
R
j T
th1
P
(t)
tot
C
th1
C
th2
C
th1
C
th2
C
th3
C
th4
C
th5
C
th6
R
th,n
C
th,n
T
case
amb
0.00003158
0.0001104
0.0002001
0.0004898
0.00274
0.035
External Heatsink
Ws/K
Page 4
2002-06-10
Preliminary data
SPD02N60C3
SPU02N60C3
1 Power dissipation
P
= f (TC)
tot
SPD02N60C3
28
W
24
22
20
tot
18
P
16
14
12
10
8
6
4
2
0
0 20 40 60 80 100 120
°C
2 Drain current
ID = f (TC)
parameter: VGS≥ 10 V
SPD02N60C3
1.9
A
1.6
1.4
1.2
D
I
1
0.8
0.6
0.4
0.2
160
T
C
0
0 20 40 60 80 100 120
°C
160
T
C
3 Safe operating area
ID = f ( VDS )
parameter : D = 0 , TC=25°C
1
10
A
0
10
D
I
10
10
-1
-2
10
0
tp = 0.001 ms
tp = 0.01 ms
tp = 0.1 ms
tp = 1 ,ms
DC
1
10
10
4 Transient thermal impedance
Z
= f (tp)
thJC
parameter: D = tp/T
1
10
K/W
0
10
thJC
Z
-4
D = 0.5
D = 0.2
D = 0.1
D = 0.05
D = 0.02
D = 0.01
single pulse
-3
10
-1
10
s
t
p
-1
10
-2
10
-3
2
V
V
DS
10
3
10
10
-7
10
-6
10
-5
10
Page 5
2002-06-10
Preliminary data
SPD02N60C3
SPU02N60C3
5 Typ. output characteristic
ID = f (VDS); Tj=25°C
parameter: tp = 10 µs, V
5.5
A
4.5
4
D
3.5
I
3
2.5
2
1.5
1
0.5
0
0 2 4 6 8 10 12 14 16
GS
V20
V10
V7
V6.5
V5
V4
V5.5
V4.5
V6
V
V
DS
20
6 Typ. output characteristic
ID = f (VDS); Tj=150°C
parameter: tp = 10 µs, V
3
A
2.4
2.1
D
I
1.8
1.5
1.2
0.9
0.6
0.3
0
0 5 10 15
GS
20V
8V
7V
6.5V
V
5.5V
5V
4.5V
4V
V
6V
25
DS
7 Typ. drain-source on resistance
R
DS(on)
parameter: Tj=150°C, V
R
=f(ID)
GS
20
DS(on)
Ω
16
14
12
10
4V 4.5V 5V
8
6
4
2
0 0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4
5,5V
6.5V
7V
8V
20V
6V
A
I
8 Drain-source on-state resistance
R
DS(on)
= f (Tj)
parameter : ID = 1.1 A, VGS = 10 V
SPD02N60C3
17
Ω
14
12
DS(on)
R
10
8
6
4
2
0
3
D
-60 -20 20 60 100
98%
typ
°C
180
T
j
Page 6
2002-06-10
Preliminary data
SPD02N60C3
SPU02N60C3
9 Typ. transfer characteristics
ID= f ( VGS ); VDS≥ 2 x ID x R
DS(on)max
parameter: tp = 10 µs
5.5
A
25°C
4.5
4
D
3.5
I
3
2.5
2
1.5
1
0.5
0
0 2 4 6 8 10 12 14 16
150°C
V
V
GS
20
10 Gate threshold voltage
V
GS(th)
= f (Tj)
parameter: VGS = VDS, ID = 80 µA
5
V
4
3.5
GS(th)
V
3
2.5
2
1.5
1
0.5
0
-60 -20 20 60 100
max.
typ.
min.
°C
T
160
j
11 Typ. gate charge
V
GS
= f (Q
Gate
)
parameter: ID = 1.8 A pulsed
SPD02N60C3
16
V
12
V
0,2
GS
10
V
8
6
4
2
0
0 2 4 6 8 10 12
DS max
0,8 V
DS max
nC
Q
15
Gate
12 Forward characteristics of body diode
IF = f (VSD)
parameter: Tj , tp = 10 µs
1
SPD02N60C3
10
A
0
10
F
I
-1
10
Tj = 25 °C typ
Tj = 150 °C typ
Tj = 25 °C (98%)
Tj = 150 °C (98%)
-2
10
0 0.4 0.8 1.2 1.6 2 2.4
3
V
V
SD
Page 7
2002-06-10
Preliminary data
SPD02N60C3
SPU02N60C3
13 Typ. switching time
t = f (ID), inductive load, Tj=125°C
par.: VDS=380V, VGS=0/+13V, RG=25Ω
90
ns
70
60
t
50
40
30
20
tdon
tr
10
0
0.25 0.5 0.75 1 1.25 1.5
tdoff
tf
A
I
D
14 Typ. switching time
t = f (RG), inductive load, Tj=125°C
par.: VDS=380V, VGS=0/+13V, ID=1.8 A
400
ns
300
tf
td(on)
tr
td(off)
Ω
R
260
G
250
t
200
150
100
50
2
0
0 40 80 120 160 200
15 Typ. drain current slope
di/dt = f(RG), inductive load, Tj = 125°C
par.: VDS=380V, VGS=0/+13V, ID=1.8A
1000
A/µs
600
di/dt
400
200
0
0 40 80 120 160 200
di/dt(on)
di/dt(off)
Ω
R
16 Typ. drain source voltage slope
dv/dt = f(RG), inductive load, Tj = 125°C
par.: VDS=380V, VGS=0/+13V, ID=1.8A
85000
V/ns
dv/dt
45000
dv/dt(on)
25000
dv/dt(off)
280
G
5000
0 40 80 120 160 200
Ω
R
280
G
Page 8
2002-06-10
Preliminary data
SPD02N60C3
SPU02N60C3
17 Typ. switching losses
E = f (ID), inductive load, Tj=125°C
par.: VDS=380V, VGS=0/+13V, RG=25Ω
0.01
mWs
0.008
0.007
E
0.006
0.005
0.004
0.003
0.002
0.25 0.5 0.75 1 1.25 1.5
Eon
Eoff
A
I
D
18 Typ. switching losses
E = f(RG), inductive load, Tj=125°C
par.: VDS=380V, VGS=0/+13V, ID=1.8A
0.0425
mWs
0.0325
0.0275
E
0.0225
0.0175
0.0125
0.0075
0.0025
2
0 40 80 120 160 200
Eon
Eoff
Ω
R
280
G
19 Avalanche SOA
IAR = f (tAR)
par.: Tj ≤ 150 °C
1.8
A
1.4
1.2
AR
I
1
0.8
0.6
0.4
0.2
0
10
-3
Tjstart=125°C
-2
10
10
-1
Tjstart=25°C
10 0 10 1 10
20 Avalanche energy
EAS = f (Tj)
par.: ID = 0.9 A, VDD = 50 V
50
mJ
AS
E
30
20
10
2
µs
t
AR
10
4
0
20 40 60 80 100 120
°C
160
T
j
Page 9
2002-06-10
Preliminary data
SPD02N60C3
SPU02N60C3
21 Drain-source breakdown voltage
V
(BR)DSS
(BR)DSS
V
= f (Tj)
SPD02N60C3
720
V
680
660
640
620
600
580
560
540
-60 -20 20 60 100
°C
22 Avalanche power losses
PAR = f (f )
parameter: EAR=0.07mJ
70
W
50
AR
P
40
30
20
10
0
180
T
j
10
4
10
5
Hz
10
6
f
23 Typ. capacitances
C = f (VDS)
parameter: VGS=0V, f=1 MHz
4
10
pF
3
10
Ciss
C
2
10
1
10
Crss
0
10
0 100 200 300 400
Coss
V
V
DS
600
24 Typ. C
E
=f(VDS)
oss
1.8
µJ
1.4
1.2
oss
E
1
0.8
0.6
0.4
0.2
0
0 100 200 300 400
stored energy
oss
V
V
600
DS
Page 10
2002-06-10
Preliminary data
Definition of diodes switching characteristics
SPD02N60C3
SPU02N60C3
Page 11
2002-06-10
Preliminary data
SPD02N60C3
SPU02N60C3
P-TO251 (I-Pak)
dimensions
symbol [mm] [inch]
min max min max
A 6.47 6.73 0.2547 0.2650
B 5.25 5.41 0.2067 0.2130
C 4.19 4.43 0.1650 0.1744
D 0.63 0.89 0.0248 0.0350
E
F 2.18 2.39 0.0858 0.0941
G 0.76 0.86 0.0299 0.0339
H 1.01 1.11 0.0398 0.0437
K 5.97 6.23 0.2350 0.2453
L 9.14 9.65 0.3598 0.3799
M 0.46 0.56 0.0181 0.0220
N 0.98 1.15 0.0386 0.0453
2.29 typ. 0.0902 typ.
P-TO252 (D-Pak)
dimensions
symbol
A 6.40 6.73 0.2520 0.2650
B 5.25 5.50 0.2067 0.2165
C (0.65) (1.15) (0.0256) (0.0453)
D 0.63 0.89 0.0248 0.0350
E
F 2.19 2.39 0.0862 0.0941
G 0.76 0.98 0.0299 0.0386
H 0.90 1.21 0.0354 0.0476
K 5.97 6.23 0.2350 0.2453
L 9.40 10.40 0.3701 0.4094
M 0.46 0.58 0.0181 0.0228
N 0.87 1.15 0.0343 0.0453
P 0.51 - 0.0201 R 5.00 - 0.1969 S 4.17 - 0.1642 T 0.26 1.02 0.0102 0.0402
U--- -
[mm] inch]
min max min max
2.28 0.2520
Page 12
2002-06-10
SPD02N60C3
Preliminary data
Published by
Infineon Technologies AG,
Bereichs Kommunikation
St.-Martin-Strasse 53,
D-81541 München
© Infineon Technologies AG 1999
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as warranted
characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list).
Warnings
Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device
or system Life support devices or systems are intended to be implanted in the human body, or to support
and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health
of the user or other persons may be endangered.
SPU02N60C3
Page 13
2002-06-10
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