INFINEON SPD02N60C3, SPU02N60C3 User Manual
Preliminary data
j
)
j
A
j
A
t
j
g
Cool MOS™====Power Transistor
Feature
•=New revolutionary high voltage technology
• Ultra low gate charge
•=Periodic avalanche rated
• Extreme dv/dt rated
SPD02N60C3
SPU02N60C3
Product Summary
VDS @ T
R
DS(on
I
D
max
650 V
1.8 A
3 Ω
•=Ultra low effective capacitances
P-TO252P-TO251
•=150 °C operating temperature
Type Package Ordering Code
SPD02N60C3 P-TO252 Q67040-S4420
SPU02N60C3 P-TO251 -
Marking
02N60C3
02N60C3
Maximum Ratings, at TC = 25°C, unless otherwise specified
Parameter Symbol Value Unit
Continuous drain current
TC = 25 °C
T
= 100 °C
C
Pulsed drain current, tp limited by T
Avalanche energy, single pulse
ID=0.9A, VDD=50V
max
I
D
I
D puls
E
AS
1.8
1.1
5.4
50 mJ
A
Avalanche energy, repetitive tAR limited by T
I
=1.8A, VDD=50V
D
Avalanche current, repetitive t
limited by T
R
Reverse diode dv/dt
IS=1.8A, VDS <=VDD, di/dt=100A/µs, T
jmax
=150°C
Gate source voltage static V
Gate source voltage AC (f >1Hz) V
Power dissipation, T
= 25°C P
C
Operating and storage temperature T
Page 1
jmax
max
1)
E
AR
I
R
dv/dt
GS
GS
to
T
,
st
0.07
1.8 A
6
±20
±30
25 W
-55... +150
V/ns
V
°C
2002-06-10
SPD02N60C3
A
Preliminary data
Thermal Characteristics
Parameter Symbol Values Unit
min. typ. max.
Characteristics
SPU02N60C3
Thermal resistance, junction - case R
Thermal resistance, junction - ambient, leaded R
SMD version, device on PCB:
R
@ min. footprint
@ 6 cm2 cooling area
2)
Linear derating factor
Soldering temperature,
T
thJC
thJ
thJA
sold
- - 5 K/W
- - 75
-
-
- - 0.2
- - 260 °C
1.6 mm (0.063 in.) from case for 10s
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Static Characteristics
Drain-source breakdown voltage
VGS=0V, ID=0.25mA
Drain-source avalanche breakdown voltage
VGS=0V, ID=0.25A
V
(BR)DSS
V
(BR)DS
600 - - V
- 700 -
-
-
75
50
W/K
Gate threshold voltage, VGS = V
I
= 80 µA
D
Zero gate voltage drain current
VDS = 600 V, VGS = 0 V, Tj = 25 °C
V
= 600 V, VGS = 0 V, Tj = 150 °C
DS
Gate-source leakage current
VGS=30V, VDS=0V
Drain-source on-state resistance
VGS=10V, ID=1.1A, Tj=25°C
V
=10V, ID=1.1A, Tj=150°C
GS
Gate input resistance
DS
V
GS(th)
I
DSS
I
GSS
R
DS(on)
R
G
2.1 3 3.9
-
-
0.5
-
1
50
- - 100 nA
-
-
2.7
6
3
6.7
- 9 -
f = 1 MHz, open drain
1
Repetitve avalanche causes additional power losses that can be calculated as P
2
Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
AV=EAR
*f.
µA
Ω
Page 2
2002-06-10
SPD02N60C3
)
)
f
g
g
(
)
Preliminary data
Electrical Characteristics , at Tj = 25 °C, unless otherwise specified
Parameter Symbol Conditions Values Unit
min. typ. max.
Characteristics
SPU02N60C3
Transconductance g
Input capacitance C
Output capacitance C
Reverse transfer capacitance C
Effective output capacitance,
1)
energy related
Effective output capacitance,
2)
time related
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Gate Charge Characteristics
Gate to source charge
Q
Gate to drain charge Q
Gate charge total Q
C
C
d(on
r
d(off
g
fs
iss
oss
rss
o(er)
o(tr)
s
d
VDS≥2*ID*R
I
=1.1A
D
VGS=0V, VDS=25V,
f=1MHz
DS(on)max
,
- 1.75 - S
- 200 - pF
- 90 -
- 4 -
VGS=0V,
V
=0V to 480V
DS
- 8.1 - pF
- 15.7 -
VDD=350V, VGS=0/10V,
I
=1.8A, RG=25Ω
D
- 6 - ns
- 3 -
- 68 70
- 12 30
VDD=420V, ID=1.8A - 1.6 - nC
- 3.8 -
VDD=420V, ID=1.8A,
V
=0 to 10V
GS
- 9.5 12.5
Gate plateau voltage V
1
C
is a fixed capacitance that gives the same stored energy as C
o(er)
2
C
is a fixed capacitance that gives the same charging time as C
o(tr)
plateau
VDD=420V, ID=1.8A - 5.5 - V
while VDS is rising from 0 to 80% V
oss
while VDS is rising from 0 to 80% V
oss
Page 3
2002-06-10
DSS
DSS
.
.
SPD02N60C3
Preliminary data
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter Symbol Conditions Values Unit
min. typ. max.
Characteristics
SPU02N60C3
Inverse diode continuous
I
S
TC=25°C - - 1.8 A
forward current
Inverse diode direct current,
I
SM
- - 5.4
pulsed
Inverse diode forward voltage V
Reverse recovery time t
Reverse recovery charge Q
Peak reverse recovery current I
Peak rate of fall of reverse
dirr/dt
SD
rr
rr
rrm
VGS=0V, IF=IS - 1 1.2 V
VR=420V, IF=IS ,
di
/dt=100A/µs
F
- 200 350 ns
- 1.3 - µC
- 9 - A
- - 200 A/µs
recovery current
Transient Thermal Characteristics
Symbol Value Unit Symbol Value Unit
typ. typ.
Thermal resistance
Thermal capacitance
R
R
R
R
R
R
th1
th2
th3
th4
th5
th6
0.101 K/W
0.207
0.311
0.583
0.501
0.135
T
R
j T
th1
P
(t)
tot
C
th1
C
th2
C
th1
C
th2
C
th3
C
th4
C
th5
C
th6
R
th,n
C
th,n
T
case
amb
0.00003158
0.0001104
0.0002001
0.0004898
0.00274
0.035
External Heatsink
Ws/K
Page 4
2002-06-10
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