INFINEON SPP20N60S5, SPB20N60S5 User Manual
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j
)
j
A
j
g
Preliminary data
SPP20N60S5
SPB20N60S5
Cool MOS™====Power Transistor
•=New revolutionary high voltage technology
• Worldwide best R
• Ultra low gate charge
•=Improved periodic avalanche rating
• Extreme dv/dt rated
•=Optimized capacitances
•=Improved noise immunity
•=Former development designation:
SPPx1N60S5/SPBx1N60S5
Type Package Ordering Code
SPP20N60S5
SPB20N60S5 P-TO263-3-2 Q67040-S4171
in TO 220
DS(on)
P-TO220-3-1 Q67040-S4751
OO
L
MOS
C
Power Semicon d uctors
Product Summary
VDS @ T
R
DS(on
I
D
P-TO263-3-2 P-TO220-3-1
max
650 V
0.19 Ω
20 A
Marking
20N60S5
20N60S5
G,1
D,2
S,3
Maximum Ratings,at Tj = 25 °C, unless otherwise specified
Parameter Symbol Value Unit
Continuous drain current
TC=25°C
T
=100°C
C
Pulsed drain current
TC=25°C
1)
Avalanche energy, single pulse
I
= 10 A, VDD = 50 V
D
Avalanche energy (repetitive, limited by T
jmax
I
D
20
13
I
D puls
E
AS
)
E
AR
40
690 mJ
1
A
ID = 20 A, VDD = 50 V
Avalanche current (repetitive, limited by T
Reverse diode dv/dt
IS=20A, VDS<V
, di/dt=100A/µs, T
DSS
jmax
=150°C
max
) I
dv/dt
Gate source voltage V
Power dissipation
TC=25°C
P
R
GS
tot
20 A
6 kV/µs
±20
V
208 W
Operating and storage temperature T
1
T
,
st
-55... +150
°C
2001-07-25
SPP20N60S5
Preliminary data
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Thermal Characteristics
SPB20N60S5
Thermal resistance, junction - case R
Thermal resistance, junction - ambient
R
thJC
thJA
(Leaded and through-hole packages)
SMD version, device on PCB:
R
thJA
@ min. footprint
@ 6 cm2 cooling area
2)
Static Characteristics, at Tj = 25 °C, unless otherwise specified
Drain-source breakdown voltage
V
(BR)DSS
600 - - V
VGS = 0 V, ID = 0.25 mA
Gate threshold voltage, VGS = VDS
V
GS(th)
3.5 4.5 5.5
ID = 1 mA, Tj = 25 °C
Zero gate voltage drain current, VDS=V
DSS
I
DSS
VGS = 0 V, Tj = 25 °C
VGS = 0 V, Tj = 150 °C
- - 0.6 K/W
-
-
-
-
-
-
-
35
0.5
-
62
62
-
25
250
µA
Gate-source leakage current
VGS = 20 V, VDS = 0 V
Drain-source on-state resistance
VGS = 10 V, ID = 13 A
1
current limited by T
2
Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6 cm
connection. PCB is vertical without blown air.
jmax
I
GSS
R
DS(on)
- - 100 nA
- 0.16 0.19
Ω
² (one layer, 70µm thick) copper area for drain
2
2001-07-25
SPP20N60S5
)
)
f
g
g
Preliminary data
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter Symbol Conditions Values Unit
min. typ. max.
Dynamic Characteristics
SPB20N60S5
Transconductance g
Input capacitance C
Output capacitance C
Reverse transfer capacitance C
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Gate Charge Characteristics
Gate to source charge Q
Gate to drain charge Q
Total gate charge Q
fs
iss
oss
rss
d(on
r
d(off
s
d
g
VDS≥2*ID*R
I
=13A
D
VGS=0V, VDS=25V,
f=1MHz
DS(on)max
,
- 12 - S
- 3000 - pF
- 1170 -
- 28 -
VDD=350V, VGS=10V,
I
=20A, RG=5.7Ω
D
- 120 - ns
- 25 -
- 140 210
- 30 45
VDD=350V, ID=20A - 21 - nC
- 47 -
VDD=350V, ID=20A,
V
=0 to 10V
GS
- 79 103
Reverse Diode
Inverse diode continuous
I
forward current
Inverse diode direct
I
current,pulsed
Inverse diode forward voltage V
Reverse recovery time t
Reverse recovery charge Q
S
SM
SD
rr
rr
TC=25°C - - 20 A
- - 40
VGS=0V, IF=20A - 1 1.2 V
VR=100V, I
di
/dt=100A/µs
F
lS,
=
F
- 610 - ns
- 12 - µC
3
2001-07-25
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