Infineon SPB20N60C3, SPP20N60C3 Schematic [ru]

Preliminary data

)

j

)

j

A

j

A

t

j

g

SPP20N60C3

SPB20N60C3

Cool MOS™====Power Transistor

Feature

•=New revolutionary high voltage technology

• Worldwide best R

DS(on

• Ultra low gate charge

•=Periodic avalanche rated

• Extreme dv/dt rated

•=High peak current capability

•=Improved transconductance

•=150 °C operating temperature

Type Package Ordering Code

SPP20N60C3 P-TO220-3-1 Q67040-S4398
SPB20N60C3 P-TO263-3-2 Q67040-S4397

in TO 220

Product Summary

VDS @ T
R
I

D

Marking

20N60C3
20N60C3

DS(on

C

Power Semiconductors

max

L

OO

650 V

MOS

0.19 Ω

20.7 A

P-TO220-3-1P-TO263-3-2

Maximum Ratings, at Tj = 25 °C, unless otherwise specified
Parameter Symbol Value Unit

Continuous drain current

TC = 25 °C
T

= 100 °C

C

Pulsed drain current, tp limited by T

max

Avalanche energy, single pulse

ID=10A, VDD=50V

Avalanche energy, repetitive tAR limited by T

I

=20A, VDD=50V

D

Avalanche current, repetitive t

limited by T

R

Reverse diode dv/dt

IS=20.7A, VDS <=VDD, di/dt=100A/µs, T

jmax

=150°C

jmax

max

1)

I

I
E

E

I

dv/dt

Gate source voltage static V
Gate source voltage dynamic V
Power dissipation, T

= 25°C P

C

Operating and storage temperature T

D

D puls

AS

AR

R

GS
GS
to

T

,

20.7

13.1

62.1
690 mJ

1

20 A

6

±20
±30

208 W

st

-55... +150

A

V/ns

V

°C

Page 1

2001-07-05

SPP20N60C3

A

Preliminary data

Thermal Characteristics
Parameter Symbol Values Unit

min. typ. max.

Characteristics

SPB20N60C3

Thermal resistance, junction - case R
Thermal resistance, junction - ambient, leaded R
SMD version, device on PCB:

R

@ min. footprint
@ 6 cm2 cooling area

2)

Linear derating factor
Soldering temperature,

T

thJC
thJ
thJA

sold

- - 0.6 K/W

- - 62

-

-

- - 1.67

- - 260 °C

1.6 mm (0.063 in.) from case for 10s

Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Static Characteristics

Drain-source breakdown voltage

VGS=0V, ID=0.25mA

Drain-source avalanche breakdown voltage

VGS=0V, ID=20A

V

(BR)DSS

V

(BR)DS

600 - - V

- 700 -

-

35

62

­W/K

Gate threshold voltage, VGS = V

I

= 1 mA

D

Zero gate voltage drain current

VDS = 600 V, VGS = 0 V, Tj = 25 °C
V

= 600 V, VGS = 0 V, Tj = 150 °C

DS

Gate-source leakage current

VGS=20V, VDS=0V

Drain-source on-state resistance

VGS=10V, ID=13.1A, Tj=25°C
V

=10V, ID=13.1A, Tj=150°C

GS

Gate input resistance

DS

V

GS(th)

I

DSS

I

GSS

R

DS(on)

R

G

2.1 3 3.9

-

-

0.5

-

25

250

- - 100 nA

-

-

0.16

0.54

0.19

0.64

- 0.54 -

f = 1 MHz, open drain

1

Repetitve avalanche causes additional power losses that can be calculated as P

2

Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain

connection. PCB is vertical without blown air.

AV=EAR

*f.

µA

Ω

Page 2

2001-07-05

SPP20N60C3

)

f

g

g

(

)

Preliminary data

Electrical Characteristics , at Tj = 25 °C, unless otherwise specified
Parameter Symbol Conditions Values Unit

min. typ. max.

Characteristics

SPB20N60C3

Transconductance g

Input capacitance C
Output capacitance C
Reverse transfer capacitance C
Effective output capacitance,

1)

C

energy related
Effective output capacitance,

2)

C

time related
Turn-on delay time t

Rise time t
Turn-off delay time t
Fall time t

fs

iss
oss
rss
o(er)

o(tr)

d(on)

r
d(off

VDS≥2*ID*R
I

=13.1A

D

VGS=0V, VDS=25V,
f=1MHz

VGS=0V,
V

=0V to 480V

DS

VDD=380V, VGS=0/13V,
I

=20.7A, RG=3.6Ω,

D

T

=125

j

VDD=380V, VGS=0/13V,
I

=20.7A, RG=3.6Ω

D

DS(on)max

,

- 17.5 - S

- 3000 - pF

- 1170 -

- 40 -

- 83 - pF

- 160 -

- 10 - ns

- 5 -

- 67 100

- 4.5 12

Gate Charge Characteristics

Gate to source charge
Gate to drain charge Q
Gate charge total Q

Gate plateau voltage V

1

C

is a fixed capacitance that gives the same stored energy as C

o(er)

2

C

is a fixed capacitance that gives the same charging time as C

o(tr)

Q

g

plateau

s
d

VDD=480V, ID=20.7A - 11 - nC

VDD=480V, ID=20.7A,
V

GS

VDD=480V, ID=20.7A - 5.5 - V

Page 3

=0 to 10V

- 33 -

- 87 114

while VDS is rising from 0 to 80% V

oss

while VDS is rising from 0 to 80% V

oss

2001-07-05

DSS

DSS

.

.

SPP20N60C3

Preliminary data

Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter Symbol Conditions Values Unit

min. typ. max.

Characteristics

SPB20N60C3

Inverse diode continuous

I

S

TC=25°C - - 20.7 A

forward current
Inverse diode direct current,

I

SM

- - 62.1
pulsed
Inverse diode forward voltage V
Reverse recovery time t
Reverse recovery charge Q
Peak reverse recovery current I
Peak rate of fall of reverse

dirr/dt

SD

rr

rr

rrm

VGS=0V, IF=IS - 1 1.2 V
VR=480V, IF=IS ,

di

/dt=100A/µs

F

- 500 800 ns

- 11 - µC

- 70 - A

- 1400 - A/µs
recovery current

Transient Thermal Characteristics
Symbol Value Unit Symbol Value Unit

typ. typ.

Thermal resistance

Thermal capacitance

R
R
R
R
R
R

th1
th2
th3
th4

th5

th6

0.00746 K/W

0.017

0.028

0.065

0.081

0.037

T

R

j T

th1

P

(t)

tot

C

th1

C

th1

C

th2

C

th3

C

th4

C

th5

C

th6

R

th,n

C

th2

C

th,n

T

case

amb

0.000439

0.00145

0.00239

0.00499

0.021

0.146

External Heatsink

Ws/K

Page 4

2001-07-05

Preliminary data

SPP20N60C3

SPB20N60C3

1 Power dissipation

P

= f (TC)

tot

SPP20N60C3

240

W

200
180
160

tot

P

140
120
100

80
60
40
20

0

0 20 40 60 80 100 120

°C

2 Drain current

ID = f (TC)

parameter: VGS≥ 10 V

SPP20N60C3

24

A

20
18
16

D

I

14
12
10

8
6
4
2

160

T

C

0

0 20 40 60 80 100 120

°C

160

T

C

3 Safe operating area

ID = f ( VDS )

parameter : D = 0 , TC=25°C

2

SPP20N60C3

10

A

1

10

D

I

0

10

-1

10

10

D

R

0

D

I

/

S

D

V

=

)

n

o

(

S

1

10

10

4 Transient thermal impedance

Z

= f (tp)

thJC

parameter : D = tp/T

SPP20N60C3

1

tp = 7.3µs

10 µs

100 µs

1 ms

10 ms

DC

2

V

V

DS

10

3

K/W

thJC

Z

10

10

10

10

10

10

10

0

-1

-2

D = 0.50

0.20

-3

10

single pulse

-7

10

-6

-5

-4

10

10

10

-3

-4

-5

10

0.10

0.05

0.02

0.01

-2

s

t

0

10

p

Page 5

2001-07-05