INFINEON SPB20N60C2, SPA20N60C2 User Manual
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j
j
AR
t
j
g
Cool MOS™ Power Transistor
Final data
SPP20N60C2, SPB20N60C2
SPA20N60C2
Feature
• New revolutionary high voltage technology
• Worldwide best R
DS(on)
in TO 220
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
P-TO220-3-31 P-TO220-3-1P-TO263-3-2
• Ultra low effective capacitances
P-TO220-3-31
Type Package Ordering Code
SPP20N60C2 P-TO220-3-1 Q67040-S4320
SPB20N60C2 P-TO263-3-2 Q67040-S4322
SPA20N60C2 P-TO220-3-31 Q67040-S4333
Maximum Ratings
Product Summary
V
R
I
3
2
1
Marking
20N60C2
20N60C2
20N60C2
@ T
DS
DS(on)
D
jmax
650 V
0.19 Ω
20 A
Parameter Symbol Value Unit
SPA
1)
20
1)
13
A
Continuous drain current
T
= 25 °C
C
T
= 100 °C
C
Pulsed drain current, tp limited by T
max
Avalanche energy, single pulse
I
=10A, VDD=50V
D
Avalanche energy, repetitive tAR limited by T
I
=20A, VDD=50V
D
Avalanche current, repetitive tAR limited by T
Reverse diode dv/dt
I
= 20 A, V
S
< VDD, di/dt=100A/µs, T
DS
jmax
=150°C
jmax
max
2)
I
I
E
E
I
dv/dt 6 6 V/ns
Gate source voltage V
Gate source voltage AC (f >1Hz) V
Power dissipation, T
= 25°C P
C
D
D puls
AS
AR
GS
GS
to
SPP_B
20
13
40 40 A
690 690 mJ
1 1
20 20 A
±20 ±20 V
±30 ±30
208 34.5 W
Operating and storage temperature T
Page 1
T
,
st
-55...+150 °C
2002-08-12
SPP20N60C2, SPB20N60C2
A
Final data
Thermal Characteristics
Parameter Symbol Values Unit
min. typ. max.
Characteristics
SPA20N60C2
Thermal resistance, junction - case R
Thremal resistance, junction - case, FullPAK R
Thermal resistance, junction - ambient, leaded R
Thermal resistance, junction - ambient, FullPAK R
SMD version, device on PCB:
R
@ min. footprint
@ 6 cm
2
cooling area
3)
Linear derating factor
thJC
thJC_FP
thJ
thJA_FP
thJA
- - 0.6 K/W
- - 3.6
- - 62
- - 80
-
-
-
-
35
-
62
-
1.67
Linear derating factor, FullPAK - - 0.28
Soldering temperature,
T
sold
- - 260 °C
1.6 mm (0.063 in.) from case for 10s
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Static Characteristics
Drain-source breakdown voltage
VGS=0V, ID=0.25mA
V
(BR)DSS
600 - - V
W/K
Drain-source avalanche breakdown voltage
VGS=0V, ID=20A
Gate threshold voltage, VGS = V
I
=1mA
D
DS
Zero gate voltage drain current
VDS = 600 V, VGS = 0 V, Tj = 25 °C
= 600 V, VGS = 0 V, Tj = 150 °C
V
DS
Gate-source leakage current
VGS=20V, VDS=0V
Drain-source on-state resistance
VGS=10V, ID=13A, Tj=25°C
Gate input resistance
f = 1 MHz, open drain
Page 2
V
(BR)DS
V
GS(th)
I
DSS
I
GSS
R
DS(on)
R
G
- 700 -
3.5 4.5 5.5
-
-
0.1
-
1
100
- - 100 nA
- 0.16 0.19
- 0.54 -
2002-08-12
µA
Ω
Electrical Characteristics
)
)
f
Final data
SPP20N60C2, SPB20N60C2
SPA20N60C2
Parameter
Symbol Conditions Values Unit
Characteristics
Transconductance g
Input capacitance C
Output capacitance C
Reverse transfer capacitance C
Effective output capacitance,
4)
C
energy related
Effective output capacitance,
5)
C
time related
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
fs
iss
oss
rss
o(er)
o(tr)
d(on
r
d(off
V
≥2*I
DS
D*RDS(on)max
=13A
I
D
VGS=0V, VDS=25V,
f=1MHz
VGS=0V,
=0V to 480V
V
DS
VDD=380V, VGS=0/13V,
=20A,
I
D
=3.6Ω, Tj=125°C
R
G
,
min. typ. max.
- 12 - S
- 3000 - pF
- 1170 -
- 28 -
- 83 -
- 160 -
- 21 - ns
- 51 -
- 56 84
- 6 9
Gate Charge Characteristics
Gate to source charge
Gate to drain charge Q
Gate charge total Q
Gate plateau voltage V
1
Limited only by maximum temperature
2
Repetitve avalanche causes additional power losses that can be calculated as P
3
Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
4
C
is a fixed capacitance that gives the same stored energy as C
o(er)
5
is a fixed capacitance that gives the same charging time as C
C
o(tr)
Q
gs
gd
g
(plateau)
VDD=350V, ID=20A - 21 - nC
- 46 -
VDD=350V, ID=20A,
=0 to 10V
V
GS
VDD=350V, ID=20A - 8 - V
while VDS is rising from 0 to 80% V
oss
while VDS is rising from 0 to 80% V
oss
- 79 103
AV=EAR
*f.
DSS
DSS
.
.
Page 3
2002-08-12
Electrical Characteristics
Final data
SPP20N60C2, SPB20N60C2
SPA20N60C2
Parameter
Symbol Conditions Values Unit
Characteristics
Inverse diode continuous
I
forward current
Inverse diode direct current,
I
pulsed
Inverse diode forward voltage V
Reverse recovery time t
Reverse recovery charge Q
Peak reverse recovery current I
Peak rate of fall of reverse
dirr/dt
recovery current
S
SM
SD
rr
rr
rrm
min. typ. max.
TC=25°C - - 20 A
- - 40
VGS=0V, IF=IS - 1 1.2 V
VR=350V, IF=IS ,
di
/dt=100A/µs
F
- 610 1040 ns
- 12 - µC
- 48 - A
Tj=25°C - 1500 - A/µs
Typical Transient Thermal Characteristics
Symbol
Value Unit Symbol Value Unit
SPA SPA
R
R
R
R
R
R
th1
th2
th3
th4
th5
th6
0.007416 0.077 K/W C
0.016 0.015 C
0.021 0.022 C
0.06 0.063 C
0.083 0.214 C
0.038 2.479 C
T
R
j T
th1
P
(t)
tot
C
th1
C
th2
SPP_BSPP_B
th1
th2
th3
th4
th5
th6
R
th,n
C
th,n
0.0004409 0.000376 Ws/K
0.001462 0.00141
0.0024 0.00192
0.003031 0.00332
0.02 0.019
0.146 0.412
External Heatsink
T
case
amb
Page 4
2002-08-12
Final data
SPP20N60C2, SPB20N60C2
SPA20N60C2
1 Power dissipation
= f (TC)
P
tot
SPP20N60C2
240
W
200
180
160
tot
P
140
120
100
80
60
40
20
0
0 20 40 60 80 100 120
°C
2 Power dissiaption FullPAK
= f (TC)
P
tot
35
W
25
tot
P
20
15
10
5
160
T
C
0
0 20 40 60 80 100 120
°C
T
160
C
3 Safe operating area
= f ( VDS )
I
D
parameter : D = 0 , T
2
10
A
1
10
D
I
0
10
tp = 0.001 ms
tp = 0.01 ms
tp = 0.1 ms
tp = 1 ms
DC
0
10
10
-1
-2
10
10
C
1
=25°C
10
4 Safe operating area FullPAK
= f (VDS)
I
D
parameter: D = 0, T
2
10
A
1
10
D
I
0
10
tp = 0.001 ms
tp = 0.01 ms
tp = 0.1 ms
tp = 1 ms
-1
10
2
V
V
DS
10
3
10
-2
10
tp = 10 ms
DC
0
10
C
1
= 25°C
10
2
V
V
DS
10
3
Page 5
2002-08-12
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