INFINEON SPB12N50C3 User Manual
SPB12N50C3
p
jmax
AR
jmax
AR
j
g
Cool MOS™ Power Transistor
Feature
• New revolutionary high voltage technology
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
• Ultra low effective capacitances
• Improved transconductance
Type
SPB12N50C3
Package
PG-TO263
Ordering Code
Q67040-S4641
VDS @ T
Marking
12N50C3
R
DS(on)
I
jmax
560 V
0.38 Ω
D
11.6 A
PG-TO263
-
Maximum Ratings
Parameter
Continuous drain current
T
= 25 °C
C
T
= 100 °C
C
Pulsed drain current,
t
limited by
Avalanche energy, single pulse
I
=5.5A, VDD=50V
D
Avalanche energy, repetitive
I
=11.6A, VDD=50V
D
Avalanche current, repetitive
t
t
AR
Gate source voltage
Gate source voltage AC (f >1Hz)
Power dissipation,
TC = 25°C
T
limited by
limited by T
T
jmax
2)
Symbol
I
D
I
Dpuls
E
AS
E
AR
I
V
GS
V
GS
P
tot
SPB
11.6
7
34.8
340
0.6
11.6
±20
±
30
125
Value
Unit
A
A
mJ
A
V
W
Operating and storage temperature
Reverse diode dv/dt
7)
Page 1
T
,
T
st
-55...+150 °C
dv/dt
15
2005-11-07Rev. 2.4
°C
V/ns
Maximum Ratings
SPB12N50C3
Parameter
Drain Source voltage slope
VDS = 400 V, ID = 11.6 A, Tj = 125 °C
Symbol Value Unit
dv/dt 50 V/ns
Thermal Characteristics
Parameter Symbol Values Unit
min. typ. max.
Thermal resistance, junction - case
R
Thermal resistance, junction - case, FullPAK R
Thermal resistance, junction - ambient, leaded
R
Thermal resistance, junction - ambient, FullPAK R
SMD version, device on PCB:
R
@ min. footprint
2
@ 6 cm
cooling area
Soldering temperature, reflow soldering, MSL1
1.6 mm (0.063 in.) from case for 10s
3)
T
4)
thJC
thJC_FP
thJA
thJA_FP
thJA
sold
- - 1 K/W
- - 3.8
- - 62
- - 80
-
-
-
35
62
-
- - 260 °C
Electrical Characteristics, at Tj=25°C unless otherwise specified
Parameter
Drain-source breakdown voltage
Drain-Source avalanche
Symbol Conditions Values Unit
V
(BR)DSS
V
(BR)DS
VGS=0V, ID=0.25mA
VGS=0V, ID=11.6A - 600 -
breakdown voltage
Gate threshold voltage V
Zero gate voltage drain current I
Gate-source leakage current I
Drain-source on-state resistance R
Gate input resistance
R
GS(th)
DSS
GSS
DS(on)
G
ID=500µA, VGS=V
VDS=500V, VGS=0V,
=25°C
T
j
=150°C
T
j
VGS=20V, VDS=0V - - 100 nA
VGS=10V, ID=7A
=25°C
T
j
=150°C
T
j
f=1MHz, open drain - 1.4 -
DS
min. typ. max.
500
- - V
2.1 3 3.9
-
-
-
-
0.1
-
0.34
0.92
1
100
0.38
-
µA
Ω
Page 2
2005-11-07Rev. 2.4
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
SPB12N50C3
Parameter
Characteristics
Transconductance g
Input capacitance C
Output capacitance C
Reverse transfer capacitance C
Effective output capacitance,
5)
C
energy related
Effective output capacitance,
6)
C
time related
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Symbol Conditions Values Unit
min. typ. max.
V
fs
iss
oss
rss
o(er)
o(tr)
d(on)
r
d(off)
f
≥2*I
DS
D*RDS(on)max
I
=7A
D
VGS=0V, VDS=25V,
f=1MHz
VGS=0V,
V
=0V to 400V
DS
VDD=380V, VGS=0/10V,
I
=11.6A, RG=6.8Ω
D
,
- 8 - S
- 1200 - pF
- 400 -
- 30 -
- 45 -
- 92 -
- 10 - ns
- 8 -
- 45 -
- 8 -
Gate Charge Characteristics
Gate to source charge
Gate to drain charge Q
Gate charge total Q
Gate plateau voltage V
1
Limited only by maximum temperature
2
Repetitve avalanche causes additional power losses that can be calculated as P
3
Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
4
Soldering temperature for TO-263: 220°C, reflow
5
C
is a fixed capacitance that gives the same stored energy as C
o(er)
6
is a fixed capacitance that gives the same charging time as C
C
o(tr)
7
ISD<=ID, di/dt<=400A/us, V
Identical low-side and high-side switch.
DClink
Q
gs
gd
g
(plateau)
=400V, V
VDD=400V, ID=11.6A - 5 - nC
VDD=400V, ID=11.6A,
=0 to 10V
V
GS
VDD=400V, ID=11.6A - 5 - V
peak<VBR, DSS, Tj<Tj,max.
- 26 -
- 49 -
=EAR*f.
AV
while VDS is rising from 0 to 80% V
oss
while VDS is rising from 0 to 80% V
oss
DSS
DSS
.
.
Page 3
2005-11-07Rev. 2.4
Electrical Characteristics
SPB12N50C3
Parameter
Inverse diode continuous
Symbol Conditions Values Unit
I
S
forward current
Inverse diode direct current,
I
SM
pulsed
Inverse diode forward voltage V
Reverse recovery time t
Reverse recovery charge Q
Peak reverse recovery current I
Peak rate of fall of reverse
SD
rr
rr
rrm
dirr/dt
recovery current
Typical Transient Thermal Characteristics
Symbol
Value Unit Symbol Value Unit
SPB SPB
min. typ. max.
TC=25°C - - 11.6 A
- - 34.8
VGS=0V, IF=I
VR=400V, IF=IS ,
di
/dt=100A/µs
F
S
- 1 1.2 V
- 380 - ns
- 5.5 - µC
- 38 - A
Tj=25°C - 1100 - A/µs
R
R
R
R
R
R
th1
th2
th3
th4
th5
th6
0.015 K/W C
0.03 C
0.056 C
0.197 C
0.216 C
0.083 C
T
R
j T
th1
P
(t)
tot
C
th1
C
th2
R
C
th,n
th,n
th1
th2
th3
th4
th5
th6
0.0001878 Ws/K
0.0007106
0.000988
0.002791
0.007285
0.063
External Heatsink
T
case
amb
Page 4
2005-11-07Rev. 2.4
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