INFINEON SPB11N60S5 User Manual
SPB11N60S5
jmax
)
jmax
AR
j
g
Cool MOS™ Power Transistor
Feature
• New revolutionary high voltage technology
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
• Ultra low effective capacitances
• Improved transconductance
Type Package Ordering Code
SPB11N60S5 PG-TO263 Q67040-S4199
Marking
11N60S5
V
R
DS(on)
I
DS
D
600 V
0.38 Ω
11 A
PG-TO263
Maximum Ratings
Parameter
Continuous drain current
T
= 25 °C
C
T
= 100 °C
C
Pulsed drain current, tp limited by T
Avalanche energy, single pulse
I
= 5.5 A, VDD = 50 V
D
Avalanche energy, repetitive tAR limited by T
I
= 11 A, VDD = 50 V
D
Avalanche current, repetitive tAR limited by T
jmax
Symbol Value Unit
I
I
E
1
E
I
Gate source voltage V
Gate source voltage AC (f >1Hz)
Power dissipation, T
= 25°C P
C
V
Operating and storage temperature T
D
Dpuls
AS
AR
GS
GS
tot
, T
A
11
7
22
340 mJ
0.6
11 A
±20
V
±30
125 W
st
-55... +150
°C
Page 1
2005-07-22Rev. 2.3
Maximum Ratings
)
SPB11N60S5
Parameter
Drain Source voltage slope
VDS = 480 V, ID = 11 A, Tj = 125 °C
Symbol Value Unit
dv/dt 20 V/ns
Thermal Characteristics
Parameter
Thermal resistance, junction - case
Thermal resistance, junction - ambient, leaded
SMD version, device on PCB:
Symbol Values Unit
R
thJC
R
thJA
R
thJA
@ min. footprint
@ 6 cm
2
cooling area
Soldering temperature, reflow soldering, MSL1
2)
T
sold
1.6 mm (0.063 in.) from case for 10s
Electrical Characteristics, at Tj=25°C unless otherwise specified
Parameter
Symbol Conditions Values Unit
min. typ. max.
- - 1 K/W
- - 62
-
-
-
35
62
-
- - 260 °C
Drain-source breakdown voltage
Drain-Source avalanche
V
V
breakdown voltage
Gate threshold voltage V
Zero gate voltage drain current I
Gate-source leakage current I
Drain-source on-state resistance R
Gate input resistance
R
(BR)DSS
(BR)DS
GS(th
DSS
GSS
DS(on)
G
min. typ. max.
VGS=0V, ID=0.25mA 600 - - V
VGS=0V, ID=11A - 700 -
I
=500µΑ, VGS=V
D
VDS=600V, VGS=0V,
=25°C,
T
j
=150°C
T
j
VGS=20V, VDS=0V - - 100 nA
VGS=10V, ID=7A,
=25°C
T
j
T
=150°C
j
f=1MHz, open Drain - 29 -
3.5 4.5 5.5
DS
-
-
-
-
-
-
0.34
0.92
µA
25
250
Ω
0.38
-
Page 2
2005-07-22Rev. 2.3
Electrical Characteristics , at Tj = 25 °C, unless otherwise specified
SPB11N60S5
Parameter
Symbol Conditions Values Unit
Characteristics
Transconductance g
Input capacitance C
Output capacitance C
Reverse transfer capacitance C
Effective output capacitance,
3)
C
energy related
Effective output capacitance,
4)
C
time related
Turn-on delay time t
Rise time t
Turn-off delay time t
fs
iss
oss
rss
o(er)
o(tr)
d(on)
r
d(off)
V
≥2*I
DS
D*RDS(on)max
I
=7A
D
VGS=0V, VDS=25V,
f=1MHz
VGS=0V,
V
=0V to 480V
DS
VDD=350V, VGS=0/10V,
I
=11A, RG=6.8Ω
D
,
min. typ. max.
- 6 - S
- 1460 - pF
- 610 -
- 21 -
- 45 - pF
- 85 -
- 130 - ns
- 35 -
- 150 225
Fall time t
f
- 20 30
Gate Charge Characteristics
Gate to source charge
Gate to drain charge Q
Gate charge total Q
Gate plateau voltage V
1
Repetitve avalanche causes additional power losses that can be calculated as P
2
Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
3
is a fixed capacitance that gives the same stored energy as C
C
o(er)
4
is a fixed capacitance that gives the same charging time as C
C
o(tr)
Q
gs
gd
g
(plateau)
VDD=350V, ID=11A - 10.5 - nC
- 24 -
VDD=350V, ID=11A,
V
=0 to 10V
GS
VDD=350V, ID=11A - 8 - V
while VDS is rising from 0 to 80% V
oss
while VDS is rising from 0 to 80% V
oss
- 41.5 54
=EAR*f.
AV
DSS
DSS
.
.
Page 3
2005-07-22Rev. 2.3
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
SPB11N60S5
Parameter
Inverse diode continuous
Symbol Conditions Values Unit
I
S
forward current
Inverse diode direct current,
I
SM
pulsed
Inverse diode forward voltage V
Reverse recovery time t
Reverse recovery charge Q
SD
rr
rr
Typical Transient Thermal Characteristics
Symbol
Value Unit Symbol Value Unit
typ. typ.
Thermal resistance
R
R
R
R
R
R
th1
th2
th3
th4
th5
th6
0.015 K/W
0.03
0.056
0.197
0.216
0.083
min. typ. max.
TC=25°C - - 11 A
- - 22
VGS=0V, IF=I
VR=350V, IF=IS ,
/dt=100A/µs
di
F
S
- 1 1.2 V
- 650 1105 ns
- 7.9 - µC
Thermal capacitance
C
C
C
C
C
C
th1
th2
th3
th4
th5
th6
0.0001878
0.0007106
0.000988
0.002791
0.007285
0.063
Ws/K
T
R
j T
th1
P
(t)
tot
C
th1
C
th2
R
C
Page 4
th,n
th,n
T
case
amb
External Heatsink
2005-07-22Rev. 2.3
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