INFINEON SPA15N60CFD User Manual

SPA15N60CFD
CoolMOSTM Power Transistor
Features
• Intrinsic fast-recovery body diode
• Extremely low reverse recovery charge
Product Summary
V
@ Tjmax 650 V
DS
R
DS(on),max
I
D
0.330
13.4 A
• Ultra low gate charge
PG-TO220FP
• High peak current capability
• Qualified according to JEDEC
1)
for target applications
CoolMOS CFD designed for:
• Softswitching PWM Stages
• LCD & CRT TV
Type Package Marking
SPA15N60CFD PG-TO220FP 15N60CFD
Maximum ratings, at T
Parameter Symbol Conditions Unit
Continuous drain current
=25 °C, unless otherwise specified
j
2)
I
D
TC=25 °C
Value
13.4
A
T
=100 °C
C
Pulsed drain current
3)
Avalanche energy, single pulse
Avalanche energy, repetitive
Avalanche current, repetitive
3),4)
3),4)
Drain source voltage slope dv /dt
Reverse diode dv /dt dv /dt V/ns
Maximum diode commutation speed di /dt A/µs
Gate source voltage
I
D,pulse
E
AS
E
AR
I
AR
V
GS
TC=25 °C
ID=6.7 A, VDD=50 V
ID=13.4 A, VDD=50 V
=13.4 A,
I
D
V
=480 V, Tj=125 °C
DS
=13.4 A, VDS=480 V,
I
S
T
=125 °C
j
static V
AC (f >1 Hz)
Power dissipation
Operating and storage temperature
P
tot
, T
T
j
TC=25 °C
stg
8.4
33
460 mJ
0.8
13.4
80
40
600
±20
±30
34
-55 ... 150
A
V/ns
W
°C
Mounting torque M2.5 screws 50 Ncm
Rev. 1.0 page 1 2007-01-10
SPA15N60CFD
Parameter Symbol Conditions Unit
Values
min. typ. max.
Thermal characteristics
Thermal resistance, junction - case
Thermal resistance, junction ­ambient
Soldering temperature, wave soldering only allowed at leads
Electrical characteristics, at T
R
thJC
R
thJA
T
sold
=25 °C, unless otherwise specified
j
leaded - - 62
1.6 mm (0.063 in.) from case for 10 s
- - 3.7 K/W
- - 260 °C
Static characteristics
Drain-source breakdown voltage
Avalanche breakdown voltage
Gate threshold voltage
V
(BR)DSSVGS
V
(BR)DSVGS
V
GS(th)
=0 V, ID=250 µA
=0 V, ID=13.4 A
VDS=VGS, ID=750 µA
600 - - V
- 700 -
345
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
Transconductance
I
I
R
R
g
DSS
GSS
DS(on)
G
fs
VDS=600 V, VGS=0 V, T
=25 °C
j
V
=600 V, VGS=0 V,
DS
T
=150 °C
j
VGS=20 V, VDS=0 V
VGS=10 V, ID=9.4 A, T
=25 °C
j
V
=10 V, ID=9.4 A,
GS
T
=150 °C
j
- 1.4 - µA
- 1200 -
- - 100 nA
- 0.28 0.33
- 0.78 -
f =1 MHz, open drain - 1.3 -
|VDS|>2|ID|R
I
=9.4 A
D
DS(on)max
,
-8-S
Rev. 1.0 page 2 2007-01-10
SPA15N60CFD
Parameter Symbol Conditions Unit
Values
min. typ. max.
Dynamic characteristics
Input capacitance
Output capacitance
C
iss
C
oss
V
=0 V, VDS=25 V,
GS
- 1820 - pF
- 520 -
f =1 MHz
Reverse transfer capacitance
Effective output capacitance, energy
5)
related
Effective output capacitance, time
6)
related
Turn-on delay time
Rise time
Turn-off delay time
Fall time
C
C
C
t
t
t
t
rss
o(er)
o(tr)
d(on)
r
d(off)
f
=0 V, VDS=0 V
V
GS
to 480 V
V
=400 V,
DD
V
=10 V, ID=13.4 A,
GS
=3.6
R
G
-21-
-61-
- 110 -
-43-ns
-24-
-47-
-5-
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
1)
J-STD20 and JESD22
2)
Limited only by maximum temperature
3)
Pulse width tp limited by T
4)
Repetitive avalanche causes additional power losses that can be calculated as PAV=EAR*f.
5)
C
is a fixed capacitance that gives the same stored energy as C
o(er)
6)
C
is a fixed capacitance that gives the same charging time as C
o(tr)
j,max
Q
Q
Q
V
gs
gd
g
plateau
=480 V,
V
DD
I
=13.4 A,
D
V
=0 to 10 V
GS
while VDS is rising from 0 to 80% V
oss
while VDS is rising from 0 to 80% V
oss
-11-nC
-38-
-6384
- 7.3 - V
DSS.
DSS.
Rev. 1.0 page 3 2007-01-10
SPA15N60CFD
Parameter Symbol Conditions Unit
Values
min. typ. max.
Reverse Diode
2)
Diode continuous forward current
Diode pulse current
3)
Diode forward voltage
Reverse recovery time
Reverse recovery charge
Peak reverse recovery current
Peak rate of fall of reverse recovery current
I
S
I
S,pulse
V
SD
t
rr
Q
rr
I
rrm
di
/ dtTj=25 °C
rr
T
=25 °C
C
VGS=0 V, IF=IS, T
=25 °C
j
V
=480 V, IF=IS,
R
di
/dt =100 A/µs
F
- - 13.4 A
--33
- 1.0 1.2 V
- 147 - ns
-1-µC
-12-A
- 1200 - A/µs
Rev. 1.0 page 4 2007-01-10
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