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jmax
jmax
AR
j
g
SPP12N50C3, SPB12N50C3
SPI12N50C3, SPA12N50C3
Cool MOS™ Power Transistor
Feature
• New revolutionary high voltage technology
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
• Ultra low effective capacitances
• Improved transconductance
P-TO220-3-31
• P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)
Type Package Ordering Code
SPP12N50C3 P-TO220-3-1 Q67040-S4579
SPB12N50C3 P-TO263-3-2 Q67040-S4641
SPI12N50C3 P-TO262 Q67040-S4578
SPA12N50C3 P-TO220-3-31
Q67040-S4577
P-TO262 P-TO220-3-1P-TO220-3-31 P-TO263-3-2
3
2
1
Marking
12N50C3
12N50C3
12N50C3
12N50C3
VDS @ T
R
DS(on)
I
D
jmax
560 V
0.38 Ω
11.6 A
2
-
-
-
3
2
1
Maximum Ratings
Parameter Symbol Value Unit
SPP_B_I SPA
Continuous drain current
T
= 25 °C
C
T
= 100 °C
C
Pulsed drain current, tp limited by T
Avalanche energy, single pulse
I
=5.5A, VDD=50V
D
Avalanche energy, repetitive tAR limited by T
I
=11.6A, VDD=50V
D
jmax
Avalanche current, repetitive tAR limited by T
Gate source voltage V
Gate source voltage AC (f >1Hz)
Power dissipation, T
= 25°C P
C
2)
I
D
I
D puls
E
AS
E
AR
I
GS
V
GS
tot
11.6
7
11.6
1)
7
A
1)
34.8 34.8 A
340 340 mJ
0.6 0.6
11.6 11.6 A
±20 ±20 V
±30 ±30
125 33 W
Operating and storage temperature T
Page 1
,
T
st
-55...+150 °C
2004-03-29Rev. 2.1
SPP12N50C3, SPB12N50C3
SPI12N50C3, SPA12N50C3
Maximum Ratings
Parameter Symbol Value Unit
Drain Source voltage slope
VDS = 400 V, ID = 11.6 A, Tj = 125 °C
dv/dt 50 V/ns
Thermal Characteristics
Parameter Symbol Values Unit
min. typ. max.
Thermal resistance, junction - case
R
Thermal resistance, junction - case, FullPAK R
Thermal resistance, junction - ambient, leaded
R
Thermal resistance, junction - ambient, FullPAK R
SMD version, device on PCB:
R
@ min. footprint
2
@ 6 cm
cooling area
Soldering temperature,
1.6 mm (0.063 in.) from case for 10s
3)
T
4)
thJC
thJC_FP
thJA
thJA_FP
thJA
sold
- - 1 K/W
- - 3.8
- - 62
- - 80
-
-
-
35
62
-
- - 260 °C
Electrical Characteristics, at Tj=25°C unless otherwise specified
Parameter
Drain-source breakdown voltage
Drain-Source avalanche
V
V
breakdown voltage
Gate threshold voltage V
Zero gate voltage drain current I
Gate-source leakage current I
Drain-source on-state resistance R
Gate input resistance
R
Symbol Conditions Values Unit
min. typ. max.
(BR)DSS
(BR)DS
GS(th)
DSS
GSS
DS(on)
G
VGS=0V, ID=0.25mA
VGS=0V, ID=11.6A - 600 -
ID=500µA, VGS=V
VDS=500V, VGS=0V,
=25°C
T
j
=150°C
T
j
VGS=20V, VDS=0V - - 100 nA
VGS=10V, ID=7A
=25°C
T
j
=150°C
T
j
f=1MHz, open drain - 1.4 -
500
2.1 3 3.9
DS
-
-
-
-
- - V
0.1
-
0.34
0.92
1
100
0.38
-
µA
Ω
Page 2
2004-03-29Rev. 2.1
SPP12N50C3, SPB12N50C3
SPI12N50C3, SPA12N50C3
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter Symbol Conditions Values Unit
min. typ. max.
Characteristics
Transconductance g
Input capacitance C
Output capacitance C
Reverse transfer capacitance C
Effective output capacitance,
5)
C
energy related
Effective output capacitance,
6)
C
time related
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Gate Charge Characteristics
Gate to source charge
Q
Gate to drain charge Q
fs
iss
oss
rss
o(er)
o(tr)
d(on)
r
d(off)
f
gs
gd
V
≥2*I
DS
D*RDS(on)max
I
=7A
D
VGS=0V, VDS=25V,
f=1MHz
,
- 8 - S
- 1200 - pF
- 400 -
- 30 -
VGS=0V,
V
=0V to 400V
DS
- 45 -
- 92 -
VDD=380V, VGS=0/10V,
I
=11.6A, RG=6.8Ω
D
- 10 - ns
- 8 -
- 45 -
- 8 -
VDD=400V, ID=11.6A - 5 - nC
- 26 -
Gate charge total Q
Gate plateau voltage V
1
Limited only by maximum temperature
2
Repetitve avalanche causes additional power losses that can be calculated as P
3
Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
4
Soldering temperature for TO-263: 220°C, reflow
5
C
is a fixed capacitance that gives the same stored energy as C
o(er)
6
is a fixed capacitance that gives the same charging time as C
C
o(tr)
g
(plateau)
VDD=400V, ID=11.6A,
=0 to 10V
V
GS
VDD=400V, ID=11.6A - 5 - V
while VDS is rising from 0 to 80% V
oss
while VDS is rising from 0 to 80% V
oss
Page 3
- 49 -
=EAR*f.
AV
2004-03-29Rev. 2.1
DSS
DSS
.
.
Electrical Characteristics
SPP12N50C3, SPB12N50C3
SPI12N50C3, SPA12N50C3
Parameter
Symbol Conditions Values Unit
min. typ. max.
Inverse diode continuous
I
S
TC=25°C - - 11.6 A
forward current
Inverse diode direct current,
I
SM
- - 34.8
pulsed
Inverse diode forward voltage V
Reverse recovery time t
Reverse recovery charge Q
Peak reverse recovery current I
Peak rate of fall of reverse
dirr/dt
SD
rr
rr
rrm
VGS=0V, IF=IS - 1 1.2 V
VR=400V, IF=IS ,
di
/dt=100A/µs
F
- 380 - ns
- 5.5 - µC
- 38 - A
Tj=25°C - 1100 - A/µs
recovery current
Typical Transient Thermal Characteristics
Symbol Value Unit Symbol Value Unit
SPP_B_I SPA SPP_B_I SPA
R
R
R
R
R
R
th1
th2
th3
th4
th5
th6
0.015 0.15 K/W C
0.03 0.03 C
0.056 0.056 C
0.197 0.194 C
0.216 0.413 C
0.083 2.522 C
T
R
j T
th1
P
(t)
tot
C
th1
C
th2
R
C
th,n
th,n
th1
th2
th3
th4
th5
th6
0.0001878 0.0001878 Ws/K
0.0007106 0.0007106
0.000988 0.000988
0.002791 0.002791
0.007285 0.007401
0.063 0.412
External Heatsink
T
case
amb
Page 4
2004-03-29Rev. 2.1
SPP12N50C3, SPB12N50C3
SPI12N50C3, SPA12N50C3
1 Power dissipation
P
= f (TC)
tot
SPP12N50C3
140
W
120
110
100
tot
90
P
80
70
60
50
40
30
20
10
0
0 20 40 60 80 100 120
°C
2 Power dissipation FullPAK
P
= f (TC)
tot
36
W
28
24
tot
P
20
16
12
8
4
160
T
C
0
0 20 40 60 80 100 120
°C
160
T
C
3 Safe operating area
I
= f ( VDS )
D
parameter : D = 0 , T
2
10
A
1
10
D
I
0
10
tp = 0.001 ms
tp = 0.01 ms
tp = 0.1 ms
10
10
-1
-2
10
tp = 1 ms
DC
0
10
C
1
=25°C
10
4 Safe operating area FullPAK
I
= f (VDS)
D
parameter: D = 0, T
2
10
A
1
10
D
I
0
10
tp = 0.001 ms
tp = 0.01 ms
tp = 0.1 ms
-1
10
-2
2
V
V
DS
10
3
10
10
tp = 1 ms
tp = 10 ms
DC
0
10
C
1
= 25°C
10
2
V
V
DS
10
3
Page 5
2004-03-29Rev. 2.1
SPP12N50C3, SPB12N50C3
SPI12N50C3, SPA12N50C3
5 Transient thermal impedance
Z
= f (tp)
thJC
parameter: D = t
1
10
K/W
0
10
thJC
-1
Z
10
-2
10
-3
10
-4
10
-7
10
10
/T
p
D = 0.5
D = 0.2
D = 0.1
D = 0.05
D = 0.02
D = 0.01
single pulse
-6
10
-5
10
-4
10
-3
6 Transient thermal impedance FullPAK
Z
= f (tp)
thJC
parameter: D = t
1
10
K/W
0
10
thJC
-1
Z
10
-2
10
-3
10
-4
-1
10
s
t
p
10
10
-7
10
/t
p
D = 0.5
D = 0.2
D = 0.1
D = 0.05
D = 0.02
D = 0.01
single pulse
-6
-5
-4
-3
-2
10
10
10
10
10
-1
t
1
10
s
p
7 Typ. output characteristic
I
= f (VDS); Tj=25°C
D
parameter: t
40
A
32
28
D
I
24
20
16
12
8
4
0
0 5 10 15
= 10 µs, V
p
GS
20V
10V
8V
8 Typ. output characteristic
I
= f (VDS); Tj=150°C
D
parameter: t
22
A
7V
6.5V
6V
5.5V
5V
4.5V
V
25
V
DS
18
16
D
14
I
12
10
8
6
4
2
0
0 5 10 15
= 10 µs, V
p
20V
8V
7.5V
7V
GS
V
6V
5.5V
5V
4.5V
V
4V
25
DS
Page 6
2004-03-29Rev. 2.1
SPP12N50C3, SPB12N50C3
SPI12N50C3, SPA12N50C3
9 Typ. drain-source on resistance
R
DS(on)
parameter: T
R
=f(ID)
=150°C, V
j
2
Ω
4V 4.5V 5V
1
0 2 4 6 8 10 12 14 16
DS(on)
1.6
1.4
1.2
0.8
0.6
0.4
GS
5.5V
6.5V
8V
20V
6V
I
A
10 Drain-source on-state resistance
R
DS(on)
parameter : I
R
20
D
= f (Tj)
= 7 A, VGS = 10 V
D
SPP12N50C3
2.1
Ω
1.8
1.6
1.4
DS(on)
1.2
1
0.8
0.6
0.4
0.2
0
-60 -20 20 60 100
98%
typ
°C
180
T
j
11 Typ. transfer characteristics
I
= f ( VGS ); V
D
DS
≥ 2 x I
D
x R
DS(on)max
parameter: tp = 10 µs
40
A
25°C
32
28
D
I
24
20
16
12
8
4
0
0 1 2 3 4 5 6 7 8
150°C
V
V
GS
10
12 Typ. gate charge
= f (Q
V
GS
parameter: I
SPP12N50C3
16
V
12
GS
10
V
8
6
4
2
0
0 10 20 30 40 50
)
Gate
= 11.6 A pulsed
D
0,2
V
DS max
0,8 V
DS max
nC
Q
70
Gate
Page 7
2004-03-29Rev. 2.1
SPP12N50C3, SPB12N50C3
j
SPI12N50C3, SPA12N50C3
13 Forward characteristics of body diode
I
= f (VSD)
F
parameter: T
2
SPP12N50C3
10
A
1
10
F
I
0
10
-1
10
0 0.4 0.8 1.2 1.6 2 2.4
, tp = 10 µs
Tj = 25 °C typ
Tj = 150 °C typ
Tj = 25 °C (98%)
Tj = 150 °C (98%)
3
V
V
SD
14 Avalanche SOA
I
= f (tAR)
AR
par.: T
I
A
AR
≤ 150 °C
j
11
9
8
7
6
5
4
3
2
1
0
-3
10
10
(START)
T
j
-2
-1
10
=125°C
10 0 10 1 10
T
2
(START)
j
=25°C
µs
t
AR
10
4
15 Avalanche energy
E
= f (Tj)
AS
par.: I
= 5.5 A, VDD = 50 V
D
350
mJ
250
AS
E
200
150
100
50
0
20 40 60 80 100 120
°C
16 Drain-source breakdown voltage
V
(BR)DSS
(BR)DSS
V
160
T
j
= f (Tj)
SPP12N50C3
600
V
570
560
550
540
530
520
510
500
490
480
470
460
450
-60 -20 20 60 100
°C
180
T
j
Page 8
2004-03-29Rev. 2.1
SPP12N50C3, SPB12N50C3
SPI12N50C3, SPA12N50C3
17 Avalanche power losses
P
= f (f )
AR
parameter: E
300
W
200
AR
P
150
100
50
0
4
10
=0.6mJ
AR
10
5
Hz
18 Typ. capacitances
C = f (
parameter: V
6
10
f
V
)
DS
=0V, f=1 MHz
GS
4
10
pF
3
10
2
10
C
1
10
Crss
0
10
-1
10
0 100 200 300
Ciss
Coss
V
V
500
DS
19 Typ. C
E
=f(VDS)
oss
6
µJ
4
oss
E
3
2
1
0
0 100 200 300
stored energy
oss
V
V
500
DS
Page 9
2004-03-29Rev. 2.1
Definition of diodes switching characteristics
SPP12N50C3, SPB12N50C3
SPI12N50C3, SPA12N50C3
Page 10
2004-03-29Rev. 2.1
P-TO-220-3-1
±0.4
10
±0.2
3.7
SPP12N50C3, SPB12N50C3
SPI12N50C3, SPA12N50C3
B
A
±0.13
1.27
4.44
±0.6
±0.2
2.8
0.05
15.38
±0.5
C
±0.9
5.23
13.5
3x
±0.1
0.75
±0.22
1.17
2.54
2x
M
BA0.25
C
All metal surfaces tin plated, except area of cut.
Metal surface min. x=7.25, y=12.3
P-TO-263-3-2 (D2-PAK)
0.5
2.51
±0.48
9.98
±0.1
±0.2
Page 11
2004-03-29Rev. 2.1
P-TO-262-3-1 (I2-PAK)
±0.2
10
0...0.3
1)
±0.3
8.5
1)
7.55
±0.3
1
11.6
C
±0.2
4.55
0...0.15
1.05
3 x 0.75
2.54
2 x
A
±0.5
13.5
±0.1
SPP12N50C3, SPB12N50C3
SPI12N50C3, SPA12N50C3
B
4.4
1.27
0.05
2.4
2.4
M
BA0.25
C
0.5
±0.2
9.25
±0.1
1)
Typical
Metal surface min. X = 7.25, Y = 6.9
All metal surfaces tin plated, except area of cut.
P-TO-220-3-31 (FullPAK)
Please refer to mounting instructions (application note AN-TO220-3-31-01)
Page 12
2004-03-29Rev. 2.1
SPP12N50C3, SPB12N50C3
SPI12N50C3, SPA12N50C3
Published by
Infineon Technologies AG,
Bereichs Kommunikation
St.-Martin-Strasse 53,
D-81541 München
© Infineon Technologies AG 1999
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as warranted
characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list).
Warnings
Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device
or system Life support devices or systems are intended to be implanted in the human body, or to support
and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health
of the user or other persons may be endangered.
Page 13
2004-03-29Rev. 2.1
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