INFINEON SPP12N50C3, SPI12N50C3, SPA12N50C3 User Manual

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jmax

AR

j

g

SPP12N50C3, SPB12N50C3

SPI12N50C3, SPA12N50C3

Cool MOS™ Power Transistor

Feature

• New revolutionary high voltage technology

• Ultra low gate charge

• Periodic avalanche rated

• Extreme dv/dt rated

• Ultra low effective capacitances

• Improved transconductance

P-TO220-3-31

• P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)

Type Package Ordering Code

SPP12N50C3 P-TO220-3-1 Q67040-S4579

SPB12N50C3 P-TO263-3-2 Q67040-S4641

SPI12N50C3 P-TO262 Q67040-S4578

SPA12N50C3 P-TO220-3-31

Q67040-S4577

P-TO262 P-TO220-3-1P-TO220-3-31 P-TO263-3-2

3

2

1

Marking

12N50C3

VDS @ T

R

DS(on)

I

D

jmax

560 V

0.38 Ω

11.6 A

2

-

3

2

1

Maximum Ratings

Parameter Symbol Value Unit

SPP_B_I SPA

Continuous drain current

T

= 25 °C

C

T

= 100 °C

C

Pulsed drain current, tp limited by T

Avalanche energy, single pulse

I

=5.5A, VDD=50V

D

Avalanche energy, repetitive tAR limited by T

I

=11.6A, VDD=50V

D

jmax

Avalanche current, repetitive tAR limited by T

Gate source voltage V

Gate source voltage AC (f >1Hz)

Power dissipation, T

= 25°C P

C

2)

I

D

I

D puls

E

AS

E

AR

I

GS

V

GS

tot

11.6

7

11.6

1)

7

A

1)

34.8 34.8 A

340 340 mJ

0.6 0.6

11.6 11.6 A

±20 ±20 V

±30 ±30

125 33 W

Operating and storage temperature T

Page 1

,

T

st

-55...+150 °C

2004-03-29Rev. 2.1

SPP12N50C3, SPB12N50C3

SPI12N50C3, SPA12N50C3

Maximum Ratings

Parameter Symbol Value Unit

Drain Source voltage slope

VDS = 400 V, ID = 11.6 A, Tj = 125 °C

dv/dt 50 V/ns

Thermal Characteristics

Parameter Symbol Values Unit

min. typ. max.

Thermal resistance, junction - case

R

Thermal resistance, junction - case, FullPAK R

Thermal resistance, junction - ambient, leaded

R

Thermal resistance, junction - ambient, FullPAK R

SMD version, device on PCB:

R

@ min. footprint

2

@ 6 cm

cooling area

Soldering temperature,

1.6 mm (0.063 in.) from case for 10s

3)

T

4)

thJC

thJC_FP

thJA

thJA_FP

thJA

sold

- - 1 K/W

- - 3.8

- - 62

- - 80

-

35

62

-

- - 260 °C

Electrical Characteristics, at Tj=25°C unless otherwise specified

Parameter

Drain-source breakdown voltage

Drain-Source avalanche

V

breakdown voltage

Gate threshold voltage V

Zero gate voltage drain current I

Gate-source leakage current I

Drain-source on-state resistance R

Gate input resistance

R

Symbol Conditions Values Unit

min. typ. max.

(BR)DSS

(BR)DS

GS(th)

DSS

GSS

DS(on)

G

VGS=0V, ID=0.25mA

VGS=0V, ID=11.6A - 600 -

ID=500µA, VGS=V

VDS=500V, VGS=0V,

=25°C

T

j

=150°C

T

j

VGS=20V, VDS=0V - - 100 nA

VGS=10V, ID=7A

=25°C

T

j

=150°C

T

j

f=1MHz, open drain - 1.4 -

500

2.1 3 3.9

DS

-

- - V

0.1

-

0.34

0.92

1

100

0.38

-

µA

Ω

Page 2

2004-03-29Rev. 2.1

SPP12N50C3, SPB12N50C3

SPI12N50C3, SPA12N50C3

Electrical Characteristics, at Tj = 25 °C, unless otherwise specified

Parameter Symbol Conditions Values Unit

min. typ. max.

Characteristics

Transconductance g

Input capacitance C

Output capacitance C

Reverse transfer capacitance C

Effective output capacitance,

5)

C

energy related

Effective output capacitance,

6)

C

time related

Turn-on delay time t

Rise time t

Turn-off delay time t

Fall time t

Gate Charge Characteristics

Gate to source charge

Q

Gate to drain charge Q

fs

iss

oss

rss

o(er)

o(tr)

d(on)

r

d(off)

f

gs

gd

V

≥2*I

DS

D*RDS(on)max

I

=7A

D

VGS=0V, VDS=25V,

f=1MHz

,

- 8 - S

- 1200 - pF

- 400 -

- 30 -

VGS=0V,

V

=0V to 400V

DS

- 45 -

- 92 -

VDD=380V, VGS=0/10V,

I

=11.6A, RG=6.8Ω

D

- 10 - ns

- 8 -

- 45 -

- 8 -

VDD=400V, ID=11.6A - 5 - nC

- 26 -

Gate charge total Q

Gate plateau voltage V

1

Limited only by maximum temperature

2

Repetitve avalanche causes additional power losses that can be calculated as P

3

Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. 4

Soldering temperature for TO-263: 220°C, reflow 5

C

is a fixed capacitance that gives the same stored energy as C

o(er)

6

is a fixed capacitance that gives the same charging time as C

C

o(tr)

g

(plateau)

VDD=400V, ID=11.6A,

=0 to 10V

V

GS

VDD=400V, ID=11.6A - 5 - V

while VDS is rising from 0 to 80% V

oss

while VDS is rising from 0 to 80% V

oss

Page 3

- 49 -

=EAR*f.

AV

2004-03-29Rev. 2.1

DSS

.

Electrical Characteristics

SPP12N50C3, SPB12N50C3

SPI12N50C3, SPA12N50C3

Parameter

Symbol Conditions Values Unit

min. typ. max.

Inverse diode continuous

I

S

TC=25°C - - 11.6 A

forward current

Inverse diode direct current,

I

SM

- - 34.8

pulsed

Inverse diode forward voltage V

Reverse recovery time t

Reverse recovery charge Q

Peak reverse recovery current I

Peak rate of fall of reverse

dirr/dt

SD

rr

rrm

VGS=0V, IF=IS - 1 1.2 V

VR=400V, IF=IS ,

di

/dt=100A/µs

F

- 380 - ns

- 5.5 - µC

- 38 - A

Tj=25°C - 1100 - A/µs

recovery current

Typical Transient Thermal Characteristics

Symbol Value Unit Symbol Value Unit

SPP_B_I SPA SPP_B_I SPA

R

th1

th2

th3

th4

th5

th6

0.015 0.15 K/W C

0.03 0.03 C

0.056 0.056 C

0.197 0.194 C

0.216 0.413 C

0.083 2.522 C

T

R

j T

th1

P

(t)

tot

C

th1

C

th2

R

C

th,n

th1

th2

th3

th4

th5

th6

0.0001878 0.0001878 Ws/K

0.0007106 0.0007106

0.000988 0.000988

0.002791 0.002791

0.007285 0.007401

0.063 0.412

External Heatsink

T

case

amb

Page 4

2004-03-29Rev. 2.1