INFINEON SPA11N65C3, SPI11N65C3 User Manual

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A

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A

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SPP11N65C3, SPA11N65C3

SPI11N65C3

Cool MOS™ Power Transistor

Feature

• New revolutionary high voltage technology

• Ultra low gate charge

• Periodic avalanche rated

• Extreme dv/dt rated

• High peak current capability

• Improved transconductance

Type Package Ordering Code

SPP11N65C3 P-TO220-3-1 Q67040-S4557

SPA11N65C3 P-TO220-3-31 Q67040-S4554

SPI11N65C3 P-TO262-3-1 Q67040-S4561

P-TO262-3-1 P-TO220-3-31 P-TO220-3-1

P-TO220-3-31

Marking

11N65C3

V

R

DS(on)

I

DS

D

3

2

1

650 V

0.38 Ω

11 A

Maximum Ratings

Parameter

Continuous drain current

T

= 25 °C

C

T

= 100 °C

C

Pulsed drain current, tp limited by T

Avalanche energy, single pulse

I

=2.5A, V

D

Avalanche energy, repetitive t

I

=4A, V

D

Avalanche current, repetitive t

DD

=50V

limited by T

AR

limited by T

R

max

jmax

max

Symbol Value Unit

I

E

2)

E

I

Gate source voltage V

Gate source voltage AC (f >1Hz)

Power dissipation,

TC = 25°C

V P

D

D puls

AS

AR

R

GS GS tot

SPP_I

11

7

SPA

1)

11

1)

7

A

33 33 A

340 340 mJ

0.6 0.6

4 4 A

±20 ±20 V

±30 ±30

125 33 W

Operating and storage temperature T

Page 1

,

T

st

-55...+150 °C

2003-08-15

SPP11N65C3, SPA11N65C3

j

)

SPI11N65C3

Maximum Ratings

Parameter Symbol Value Unit

Drain Source voltage slope

V

= 480 V, I

DS

= 11 A, T

D

= 125 °C

j

dv/dt 50 V/ns

Thermal Characteristics

Parameter Symbol Values Unit

min. typ. max.

Thermal resistance, junction - case

R

Thermal resistance, junction - case, FullPAK R

Thermal resistance, junction - ambient, leaded

R

Thermal resistance, junction - ambient, FullPAK R

SMD version, device on PCB:

R

@ min. footprint

@ 6 cm

2

cooling area

Soldering temperature,

1.6 mm (0.063 in.) from case for 10s

Electrical Characteristics, at T

3)

T

4)

=25°C unless otherwise specified

thJC

thJC_FP

thJA

thJA_FP

thJA

sold

- - 1 K/W

- - 3.8

- - 62

- - 80

-

35

62

-

- - 260 °C

Parameter Symbol Conditions Values Unit

min. typ. max.

Drain-source breakdown voltage

Drain-Source avalanche

V

(BR)DSS

V

(BR)DS

V

=0V, ID=0.25mA

GS

V

=0V, ID=4A - 730 -

GS

650

5)

- - V

breakdown voltage

I

Gate threshold voltage V

Zero gate voltage drain current I

Gate-source leakage current I

Drain-source on-state resistance R

Gate input resistance

R

GS(th

DSS

GSS

DS(on)

G

=500µA, V

D

VDS=600V, V T

=25°C

j

T

=150°C

j

VGS=20V, V V

=10V, ID=7A

GS

T

=25°C

j

T

=150°C

j

f=1MHz, open drain - 0.86 -

GS=VDS

=0V,

GS

=0V - - 100 nA

DS

2.1 3 3.9

-

0.1

-

0.34

0.92

1

100

0.38

-

µA

Ω

Page 2

2003-08-15

SPP11N65C3, SPA11N65C3

SPI11N65C3

Electrical Characteristics

Parameter Symbol Conditions Values Unit

min. typ. max.

Transconductance g

Input capacitance C Output capacitance C Reverse transfer capacitance C

Effective output capacitance,

6)

C

energy related

Effective output capacitance,

7)

C

time related

Turn-on delay time t Rise time t Turn-off delay time t Fall time t

Gate Charge Characteristics

Gate to source charge

Q

Gate to drain charge Q

fs

iss oss rss

o(er)

o(tr)

d(on) r d(off) f

gs gd

VDS≥2*I

I

D

VGS=0V, V f=1MHz

D*RDS(on)max

=7A

DS

=25V,

,

- 8.3 - S

- 1200 - pF

- 390 -

- 30 -

V

=0V,

GS

V

=0V to 480V

DS

- 45 -

- 85 -

VDD=380V, V

I

=11A,

D

R

=6.8Ω

G

=0/10V,

GS

- 10 - ns

- 5 -

- 44 70

- 5 9

V

=480V, ID=11A - 5.5 - nC

DD

- 22 -

V

Gate charge total Q

Gate plateau voltage V

1

Limited only by maximum temperature

2

Repetitve avalanche causes additional power losses that can be calculated as P

3

Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. 4

Soldering temperature for TO-263: 220°C, reflow 5

HTRB @ 1000h, 600V, T

according to JEDEC A108, MIL-STD 750/1038-1040, 1042 6

is a fixed capacitance that gives the same stored energy as C

C

o(er)

7

is a fixed capacitance that gives the same charging time as C

C

o(tr)

resp. accelerated HTRB @ 168h, 600V, Tj= 175°C

jmax

g

(plateau)

=480V, ID=11A,

DD

V

=0 to 10V

GS

V

=480V, ID=11A - 5.5 - V

DD

while V

oss

while V

oss

- 45 60

=EAR*f.

AV

is rising from 0 to 80% V

DS

is rising from 0 to 80% V

DS

DSS

.

Page 3

2003-08-15

Electrical Characteristics

SPP11N65C3, SPA11N65C3

SPI11N65C3

Parameter

Inverse diode continuous

Symbol Conditions Values Unit

I

S

forward current

Inverse diode direct current,

I

SM

pulsed

Inverse diode forward voltage V

Reverse recovery time t Reverse recovery charge Q Peak reverse recovery current I

Peak rate of fall of reverse

SD

rr

rrm

dirr/dt

recovery current

Typical Transient Thermal Characteristics

Symbol

SPP_B SPP_B

Value Unit Symbol Value Unit

SPA SPA

min. typ. max.

T

=25°C - - 11 A

C

- - 33

V

=0V, IF=IS - 1 1.2 V

GS

V

=480V, IF=IS ,

R

/dt=100A/µs

di

F

- 400 600 ns

- 6 - µC

- 41 - A

T

=25°C - 1200 - A/µs

j

R

th1

th2

th3

th4

th5

th6

0.015 0.15 K/W C

0.03 0.03 C

0.056 0.056 C

0.197 0.194 C

0.216 0.413 C

0.083 2.522 C

T

R

j T

th1

P

(t)

tot

C

th1

C

th2

R

C

th,n

th1

th2

th3

th4

th5

th6

0.0001878 0.0001878 Ws/K

0.0007106 0.0007106

0.000988 0.000988

0.002791 0.002791

0.007285 0.007401

0.063 0.412

External Heatsink

T

case

amb

Page 4

2003-08-15

SPP11N65C3, SPA11N65C3

SPI11N65C3

1 Power dissipation

P

= f (T

tot

P

140

W

120

110

100

90

80

70

60

50

40

30

20

10

)

C

SPP11N65C3

0

0 20 40 60 80 100 120

°C

2 Power dissipation FullPAK

P

= f (T

tot

35

W

25

tot

P

20

15

10

160

T

C

)

C

5

0

0 20 40 60 80 100 120

°C

T

160

C

3 Safe operating area

I

= f ( VDS )

D

parameter : D = 0 ,

2

10

A

1

10

D

I

0

10

tp = 0.0008 ms tp = 0.01 ms

-1

-2

10

tp = 0.1 ms tp = 1 ms DC

0

10

T

C

1

=25°C

10

4 Safe operating area FullPAK

I

= f (V

D

parameter: D = 0,

10

A

10

D

I

10

2

V

DS

10

3

10

-1

-2

2

1

0

10

DS

0

)

T

C

tp = 0.0008 ms tp = 0.01 ms tp = 0.1 ms tp = 1 ms tp = 10 ms DC

1

10

= 25°C

10

2

V

DS

10

3

Page 5

2003-08-15